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Contextual Info: HY638100AS/HY6381OOAL HYUNDAI 128 X 8 Bit FAST SRAM PRELIMINARY DESCRIPTION The HY638100 is a 1,048,576 -bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The HY638100 uses eight common input and output liness and has an output enable pin which operates

TC558128AJ-20

Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC558128AJ-15/20 PRELIMINARY SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS STATIC RAM Description The TC558128AJ is a 1,048,576 bits high speed static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba’s CMOS technology and advanced circuit form provide high

Contextual Info: TOSHIBA TC559128AJ-15/20 MOS DIGITAL INTEGRATED CIRCUIT PRELIMINARY SILICON GATE CMOS 131,072 WORD x 9 BIT CMOS STATIC RAM Description The TC559128AJ is a 1,179,648 bits high speed static random access memory organized as 131,072 words by 9 bits using CMOS technology, and operated from a single 5-volt supply. Toshiba’s CMOS technology and advanced circuit form provide high

Contextual Info: H CAT24WC128 EE GEN FR ALO 128K-Bit I2C Serial CMOS EEPROM LE FEATURES • 1MHz I2C Bus Compatible* A D F R E ETM ■ Write Protect Feature – Entire Array Protected When WP at VIH ■ 1.8 to 6 Volt Operation ■ Low Power CMOS Technology ■ 100,000 Program/Erase Cycles

Contextual Info: H CAT24WC129 EE GEN FR ALO 128K-Bit I2C Serial CMOS EEPROM LE A D F R E ETM FEATURES • 1MHz I2C Bus Compatible* ■ Write Protect Feature – Top 1/4 Array Protected When WP at VIH ■ 1.8 to 6 Volt Operation ■ Low Power CMOS Technology ■ 100,000 Program/Erase Cycles

Contextual Info: H CAT24WC129 EE GEN FR ALO 128K-Bit I2C Serial CMOS EEPROM LE A D F R E ETM FEATURES • 1MHz I2C Bus Compatible* ■ Write Protect Feature – Top 1/4 Array Protected When WP at VIH ■ 1.8 to 6 Volt Operation ■ Low Power CMOS Technology ■ 100,000 Program/Erase Cycles

Contextual Info: November 1993 Editbn 2.0 FUJITSU DATA SHEET MB82009-20/-25 CMOS 1M-BIT HIGH SPEED SRAM 131,072-WORD x 9-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82009 is 131,072-word x 9-bit high speed static random access memory fabricated with CMOS technology.

GE-5020

Contextual Info: & Preliminary CAT24WC129 128K-Bit l2C Serial CMOS E2PROM FEATURES • 1MHz l2C Bus Compatible* ■ 1.8 to 6 Volt Operation ■ Write Protect Feature - Top 1/4 Array Protected When WP at VIH ■ Low Power CMOS Technology ■ 100,000 Program/Erase Cycles ■ 64-Byte Page Write Buffer

24WC128

Abstract: CAT24WC128
Contextual Info: Preliminary CAT24WC128 Preliminary CAT24WC128 128K-Bit Serial CMOS E2PROM FEATURES • 1MHz I2C Bus Compatible* ■ Commercial, Industrial and Automotive Tem- perature Ranges ■ 1.8 to 6 Volt Operation ■ Low Power CMOS Technology ■ Write Protect Feature

24WC128

Abstract: CAT24WC128
Contextual Info: LV S T Preliminary CAT24WC128 128K-Bit Serial CMOS E2PROM FEATURES • 400 KHz l2C Bus Compatible* ■ 1.8 to 6 Volt Operation ■ Commercial, Industrial and Automotive Tern perature Ranges ■ Low Power CMOS Technology ■ Write Protect Feature ■ 64-Byte Page Write Buffer

V9990

Abstract: S0X3 yamaha v9990 CSR BC8 yamaha fc4 A4032 scax1 csr bc7 KA17/127BPV1MSTH yamaha fc5
Contextual Info: YAMAHA L S i E-VDP-III APPLICATION MANUAL YAMAHA V 9990 APPLICATION MANUAL CATALOG No. : LSI-2499903 1992. 09 NOTICES YAMAHA reserves the right to make changes in specifications in order to improve performance without notice. The application circuit herein are presented only as an example.

24WC128

Abstract: CAT24WC128
Contextual Info: Preliminary CAT24WC128 128K-Bit I2C Serial CMOS E2PROM FEATURES • 1MHz I2C Bus Compatible* ■ Write Protect Feature – Entire Array Protected When WP at VIH ■ 1.8 to 6 Volt Operation ■ Low Power CMOS Technology ■ 100,000 Program/Erase Cycles ■ 64-Byte Page Write Buffer

24AC128

Abstract: AEC-Q100 CAT24AC128
Contextual Info: H CAT24AC128 EE GEN FR ALO 128kbit I2C Serial CMOS EEPROM With Three Chip Address Input Pins LE A D F R E ETM FEATURES • 400kHz 2.5V and 100kHz (1.8V) I2C bus ■ Commercial, industrial and extended compatibility automotive temperature ranges ■ 1.8 to 5.5 volt operation

SHL 7008

Abstract: IC-8325 n4215 IC-8333 1AH0 IP173 PD17137A RF72 IEA-734 1h001
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

24AC128

Abstract: 24WC128 CAT24AC128
Contextual Info: H EE GEN FR ALO Preliminary Information CAT24AC128 128kbit I2C Serial CMOS EEPROM With Three Chip Address Input Pins LE FEATURES • 1MHz 5V , 400kHz (2.5V) and 100kHz (1.8V) I2C A D F R E ETM ■ Commercial, industrial and extended bus comatibility automotive temperature ranges

Contextual Info: H CAT24AC128 EE GEN FR ALO 128kbit I2C Serial CMOS EEPROM With Three Chip Address Input Pins LE A D F R E ETM FEATURES • 400kHz 2.5V and 100kHz (1.8V) I2C bus ■ Commercial, industrial and extended compatibility automotive temperature ranges ■ 1.8 to 5.5 volt operation

E PLAN

Contextual Info: HY63V8100AS/HY63V81OOAL -HYUNDAI 128Kx8bit CMOS FAST SRAM PRELIMINARY DESCRIPTION The HY63V8100A is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8-bits. The HY63V8100A uses eight common input and output lines and has an output enable pin

CAT24WC129

Contextual Info: LVST P re lim in a ry CAT24WC129 128K-Bit l2C Serial CMOS E2PROM FEATURES • 1MHz l2C Bus Compatible* ■ 1.8 to 6 Volt Operation ■ Write Protect Feature - Top 1/4 Array Protected When WP at VIH ■ Low Power CMOS Technology ■ 100,000 Program/Erase Cycles

Contextual Info: Preliminary CAT24WC129 128K-Bit l2C Serial CMOS E2PROM FEATURES • 1MHz l2C Bus Compatible* ■ 1.8 to 6 Volt Operation ■ Write Protect Feature - Top 1/4 Array Protected When WP at VIH ■ Low Power CMOS Technology ■ 100,000 Program/Erase Cycles ■ 64-Byte Page Write Buffer

24AC128

Abstract: 24WC128 CAT24AC128
Contextual Info: H EE GEN FR ALO CAT24AC128 128kbit I2C Serial CMOS EEPROM With Three Chip Address Input Pins LE FEATURES • 1MHz 5V , 400kHz (2.5V) and 100kHz (1.8V) I2C A D F R E ETM ■ Commercial, industrial and extended bus comatibility automotive temperature ranges

24AC128

Abstract: AEC-Q100 CAT24AC128 CAT24C128
Contextual Info: Not Recommended for New Design, Replace with CAT24C128 H CAT24AC128 EE GEN FR ALO 128kbit I2C Serial CMOS EEPROM With Three Chip Address Input Pins LE A D F R E ETM FEATURES • 400kHz 2.5V and 100kHz (1.8V) I2C bus ■ Commercial, industrial and extended

24WC128

Abstract: CAT24WC128
Contextual Info: Preliminary CAT24WC128 128K-Bit I2C Serial CMOS E2PROM FEATURES • 1MHz I2C Bus Compatible* ■ Write Protect Feature – Entire Array Protected When WP at VIH ■ 1.8 to 6 Volt Operation ■ Low Power CMOS Technology ■ 100,000 Program/Erase Cycles ■ 64-Byte Page Write Buffer

Contextual Info: ADV MICRO MEMORY I M E D § 5 5 7 5 5 a ? f c . â b -z .° \ Advanced Micro Devices Am27C51 131,072-Bit 16384 x 8 High-Performance CMOS PROM DISTINCTIVE CHARACTERISTICS • High-speed (45 ns)/Low-Power (90 mA) CMOS EPROM Technology ■ Direct plug-in replacement for Bipolar PROMs

Contextual Info: H EE GEN FR ALO CAT24AC128 128kbit I2C Serial CMOS EEPROM With Three Chip Address Input Pins LE FEATURES • 1MHz 5V , 400kHz (2.5V) and 100kHz (1.8V) I2C A D F R E ETM ■ Commercial, industrial and extended bus comatibility automotive temperature ranges