25A DIODE Search Results

25F80

Abstract: P 1000V diod 25F10 25F100 25F120 25F20 25F40 25F60 25FR10 25FR100
Contextual Info: 2002-03-26 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-360-07 25F10 diod 25A 100V 70-360-15 25F100 diod 25A 1000V 70-360-23 25F120 diod 25A 1200V 70-360-30 25F20 diod 25A 200V

1E14

Abstract: 2E12 FRF150R4 JANSR2N7292 Rad Hard in Fairchild for MOSFET
Contextual Info: JANSR2N7292 Formerly FRF150R4 25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N72 92 /Subject (25A, 100V, 0.070 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 25A, 100V,

Contextual Info: SSC Series • IGBT based solid-state relay • Ratings up to 25A @ 1,000 VDC • DC control PRODUCT SELECTION 25A 25A SSC800-25 SSC1000-25 OUTPUT SPECIFICATIONS 1 Description Operating Voltage [VDC] MaxImumTransient Overvoltage [Vpk] Maximum Off-State Leakage Current @ Rated Voltage [mA]

SSC1000-25

Abstract: SSC800-25
Contextual Info: SSC Series • IGBT based solid-state relay • Ratings up to 25A @ 1,000 VDC • DC control PRODUCT SELECTION 25A 25A SSC800-25 SSC1000-25 OUTPUT SPECIFICATIONS 1 Description Operating Voltage [VDC] MaxImumTransient Overvoltage [Vpk] Maximum Off-State Leakage Current @ Rated Voltage [mA]

Contextual Info: SSC Series • IGBT based solid-state relay • Ratings up to 25A @ 1,000 VDC • DC control PRODUCT SELECTION 25A 25A SSC800-25 SSC1000-25 OUTPUT SPECIFICATIONS 1 Description Operating Voltage [VDC] MaxImumTransient Overvoltage [Vpk] Maximum Off-State Leakage Current @ Rated Voltage [mA]

SSC1000-25

Abstract: SSC800-25
Contextual Info: SSC Series • IGBT based solid-state relay • Ratings up to 25A @ 1,000 VDC • DC control PRODUCT SELECTION 25A 25A SSC800-25 SSC1000-25 OUTPUT SPECIFICATIONS 1 Description Operating Voltage [VDC] MaxImumTransient Overvoltage [Vpk] Maximum Off-State Leakage Current @ Rated Voltage [mA]

SSC800-25

Contextual Info: SSC Series • IGBT based solid-state relay • Ratings up to 25A @ 1,000 VDC • DC control PRODUCT SELECTION 25A 25A SSC800-25 SSC1000-25 OUTPUT SPECIFICATIONS 1 Description Operating Voltage [VDC] MaxImumTransient Overvoltage [Vpk] Maximum Off-State Leakage Current @ Rated Voltage [mArms]

Contextual Info: Digital DC/DC PMBus 25A Module ISL8270M Features The ISL8270M is a 25A step-down DC/DC power supply module with integrated digital PWM controller, synchronous power switches, an inductor and passives. Only bulk input and output capacitors are needed to finish the design. The 25A of

Contextual Info: Digital DC/DC PMBus 25A Module ISL8270M Features The ISL8270M is a 25A step-down DC/DC power supply module with integrated digital PWM controller, synchronous power switches, an inductor and passives. Only bulk input and output capacitors are needed to finish the design. The 25A of

Contextual Info: Si5411EDU www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () (Max.) ID (A) 0.0082 at VGS = - 4.5 V - 25a 0.0094 at VGS = - 3.7 V - 25a 0.0117 at VGS = - 2.5 V - 25a 0.0206 at VGS = - 1.8 V - 15 Qg (Typ.)

Contextual Info: Si5411EDU www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () (Max.) ID (A) 0.0082 at VGS = - 4.5 V - 25a 0.0094 at VGS = - 3.7 V - 25a 0.0117 at VGS = - 2.5 V - 25a 0.0206 at VGS = - 1.8 V - 15 Qg (Typ.)

bridge rectifier 25a

Abstract: 9883
Contextual Info: GBI 25A . GBI 25M power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter /4 Inline bridge Silicon-Bridge Rectifiers GBI 25A . GBI 25M Publish Data Features

Contextual Info: Si5411EDU www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () (Max.) ID (A) 0.0082 at VGS = - 4.5 V - 25a 0.0094 at VGS = - 3.7 V - 25a 0.0117 at VGS = - 2.5 V - 25a 0.0206 at VGS = - 1.8 V - 15 Qg (Typ.)

Contextual Info: Si5411EDU www.vishay.com Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () (Max.) ID (A) 0.0082 at VGS = - 4.5 V - 25a 0.0094 at VGS = - 3.7 V - 25a 0.0117 at VGS = - 2.5 V - 25a 0.0206 at VGS = - 1.8 V - 15 Qg (Typ.)

Contextual Info: BYP53 / BYP54 25A Silicon Power Rectifier Diode Part no. Description The BYP53/54 are plastic sealed 25A- diodes, which are available in different reverse voltage classes up to 800V. The diodes can be delivered with limited forward voltage and reverse current differences for

BYP54-800

Abstract: BYP53-800 BYP53 BYP53-75 BYP54 hermetic press-fit diode zetex MARKING CODE
Contextual Info: BYP53 / BYP54 25A Silicon Power Rectifier Diode Part no. Description The BYP53/54 are plastic sealed 25A- diodes, which are available in different reverse voltage classes up to 800V. The diodes can be delivered with limited forward voltage and reverse current differences for

RFK25P10

Abstract: RFH25P "Harris Corporation 1998" RFK* Relay RFH25P08 RFH25P10 RFK25P08 TB334 rfh25
Contextual Info: [ /Title RFH25 P08, RFH25P 10, RFK25P 08, RFK25P 10 /Subject (-25A, 100V, 80V, 0.150 Ohm, PChannel Power MOSFETs) /Author () /Keywords (25A, 100V a80V, 0.150 Ohm, PChannel Power MOSFETs) /Creator () /DOCIN FO pdfmark RFH25P08, RFH25P10, RFK25P08, RFK25P10

5n06

Abstract: F1S25N06 302 s1b diode
Contextual Info: RFP25N06, RF1S25N06SM Data Sheet 25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs [ /Title RFP2 5N06, RF1S2 5N06S M /Subject (25A, 60V, 0.047 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB

Contextual Info: [ /Title RFF70 N06 /Subject (25A, 60V, 0.025 Ohm, N-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, N-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF70N06 Semiconductor 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET September 1998

Contextual Info: [ /Title RFF60P 06 /Subject (25A, 60V, 0.030 Ohm, P-Channel Power MOSFET) /Author () /Keywords (Harris Semiconductor, P-Channel Power MOSFET, TO254AA) /Creator () /DOCIN FO pdfmark RFF60P06 Semiconductor 25A, 60V, 0.030 Ohm, P-Channel Power MOSFET September 1998

esad85

Contextual Info: ESAD85M-009 25A (90V / 25A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain

esad85

Contextual Info: ESAD85M-009R 25A (90V / 25A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain

ESAD85M-009

Contextual Info: ESAD85M-009 25A (90V / 25A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain

Contextual Info: ESAD85M-009 25A (90V / 25A ) Outline drawings, mm 15.5 ±0.3 3.2 +0.3 ±0.3 1.6 ±0.3 +0.2 1.1 —0.1 5.45 ±0.2 5.45 ±0.2 ±0.3 20 Min 2.3 ±0.2 2.1±0.3 5.5 21.5 5.5 ±0.2 ø3.2 ±0.2 9.3 ±0.3 SCHOTTKY BARRIER DIODE 0.6 +0.2 3.5 ±0.2 1. Gate 2. Drain