25DBM Search Results

Contextual Info: Surface Mount TCBT-2R5G+ TCBT-2R5G Bias-Tee Wideband 20 to 2500 MHz Maximum Ratings Operating Temperature Features -40°C to 85°C Storage Temperature • • • • • -55°C to 100°C RF Power 25dBm max. Voltage at DC port 25V max. Input Current 100mA

Rogers-4003

Abstract: CAPACITOR 33PF FPD1050SOT89 rogers 4003 26GHz LNA
Contextual Info: EB1050SOT89-AG FPD1050SOT89 2.6GHz LNA EVALUATION BOARD FEATURES Measured @ 2.6GHz • 25dBm Output Power • 16dB Gain ¥ 0.6dB Noise Figure ¥ 36dBm OIP3 measured at 12dBm per tone ¥ Bias Vd = 5V, Id = 80mA, Vg = -0.5V ~ -0.8V DESCRIPTION AND APPLICATIONS

ERA-3SM

Abstract: ERA-3SM 99 1128B
Contextual Info: ERA-3SM Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: ERA-3SM Reference Data: RDF-1128B S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER = -25dBm, Icc = 35mA, Vd = 3.25V @Temperature = +25degC

GALI-55

Contextual Info: GALI-55 Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: GALI-55 Reference Data: RDF-1244D S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER = -25dBm, Icc = 50mA, Vd = 4.49V @Temperature = +25degC

Contextual Info: MMIC Amplifier PHA-1+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. DEVICE VOLTAGE INPUT POWER = -25dBm, Vd = 5.00V INPUT POWER = -25dBm, Temperature = +25°C 20 20 18 18 - 45°C 16 GAIN dB GAIN (dB) 5V 14 +85°C 12 4.75V 16 +25°C 14 10 8 5.25V

1128B

Abstract: mmic era3
Contextual Info: ERA-3 Performance Data NOTE: Use PDF Bookmarks to view DATA at required conditions TYPE: MMIC Amplifier MODEL: ERA-3 Reference Data: RDF-1128B S PARAMETERS are presented in dB/deg Format TEST CONDITIONS: INPUT POWER = -25dBm, Icc = 35mA, Vd = 3.25V @Temperature = +25degC

GVA-83

Abstract: GVA83 MMIC
Contextual Info: MMIC Amplifier GVA-83+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. DEVICE VOLTAGE INPUT POWER = -25dBm, Temperature=25°C, Rb=7.5Ω INPUT POWER = -25dBm, Vd = 5.00V, Rb=7.5Ω 26 26 24 - 45°C 22 +25°C +85°C GAIN dB GAIN (dB) 20 18 16 14

GVA-84

Abstract: GVA84 MMIC
Contextual Info: MMIC Amplifier GVA-84+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. DEVICE VOLTAGE INPUT POWER = -25dBm, Temperature = +25°C INPUT POWER = -25dBm, Vd = 5.00V 26 26 24 - 45°C 24 4.75V 22 +25°C 22 5V 20 +85°C 20 5.25V 18 dB (dB) 18 16 16

GALI-52

Contextual Info: MMIC Amplifier GALI-52+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -25dBm, CURRENT = 50mA INPUT POWER = -25dBm, Temperature = +25°C 40 40 35 -45°C 35 40mA 30 +25°C 30 50mA 25 +85°C 25 60mA 20 dB (dB) 20 15 15 10 10

Contextual Info: MMIC Amplifier ERA-3 Typical Performance Curves S21 vs. TEMPERATURE INPUT POWER = -25dBm, CURRENT = 35mA 24 24 22 -45°C 20 +25°C 28mA 22 35mA 20 42mA +85°C 18 18 16 16 dB (dB) S21 vs. CURRENT INPUT POWER = -25dBm, Temperature = +25°C 14 14 12 12 10 10

Contextual Info: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω

Contextual Info: FLM1213-6F X, Ku-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 37.5dBm Typ. • High Gain: G ^ b = 7.0dB (Typ.) • High PAE: r!add = 27% (Typ.) • Low IM3 = -45dBc@Po = 25dBm • Broad Band: 12.7 ~ 13.2GHz • Impedance Matched Zin/Zout = 50Q

TGA2922-SG

Abstract: 802.11a Amplifier sg 81 AVX06035J1R2BBT AVX06035J3R9BBT RO4003
Contextual Info: Advance Product Information April 27, 2005 2 Watt 802.11a Packaged Amplifier TGA2922-SG Key Features • • • • • • • • 4.9 - 6 GHz Application Frequency Range 11 dB Nominal Gain @ 8V 480mA 34 dBm Nominal P1dB @ 8V 480mA 2.5% EVM at 25dBm output power

FLM1011-6F

Contextual Info: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω

FRM3Z232HY

Contextual Info: InGaAs-PIN/Preamp Receiver FRM3Z232HY FEATURES • • • • • • Data rate up to 2.7Gb/s Sensitivity: -25dBm typ. Small co-axial package with single-mode fiber Differential Electrical Output Preamplifier Power Supply Voltage: +3.3V Wide operating temperature range: -40 to +85°C

FRM3Z232HY

Abstract: O3002
Contextual Info: InGaAs-PIN/Preamp Receiver FRM3Z232HY FEATURES • Data rate up to 2.7Gb/s • Sensitivity: -25dBm typ. • Small co-axial package with single-mode fiber • Differential Electrical Output • Preamplifier Power Supply Voltage: +3.3V • Wide operating temperature range: -40 to +85°C

FLM1213-6F

Contextual Info: FLM1213-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Ω

PL-146

Abstract: po 254 TCBT-2R5G GU1041 TB-268
Contextual Info: Surface Mount TCBT-2R5G+ TCBT-2R5G Bias-Tee Wideband 20 to 2500 MHz Maximum Ratings Operating Temperature Features -40°C to 85°C Storage Temperature • • • • -55°C to 100°C RF Power 25dBm max. Voltage at DC port 25V max. Input Current 100mA 4 RF&DC

Contextual Info: RFPA5026 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER RFPA5026 Proposed 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: QFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features RFPA5026  P1dB =33dBm at 5V  802.11g 54Mb/s Class AB Performance  POUT =25dBm at 2.5% EVM,

Contextual Info: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 782MHz Part No: MP02502 Model: TA1152A REV. NO: 1 A. MAXIMUM RATING: 1. Input Power Level: 25dBm 2. DC Voltage: 3V

Contextual Info: FLM1213-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Ω

Contextual Info: RF5602 RF56023.3V to 5.0 V, 2.3GHz to 2.7GHz Linear Power Amplifier 3.3V TO 5.0V, 2.3GHz TO 2.7GHz LINEAR POWER AMPLIFIER Features GND VCC2 VCC2 14 13 BIAS VCC 1 12 RF OUT Single 3.3V to 5V Supply st 2% EVM RMS at 25dBm, 4.2V PDOWN Integrated Power Detector on Die

FLM1011-6F

Contextual Info: FLM1011-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 28% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Ω

FLM1213-6F

Abstract: fujitsu gaas fet
Contextual Info: FLM1213-6F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 37.5dBm Typ. High Gain: G1dB = 7.0dB (Typ.) High PAE: ηadd = 27% (Typ.) Low IM3 = -45dBc@Po = 25dBm Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Ω