262144B Search Results

Contextual Info: TMS29F002T, TMS29F002B 262144 BY 8-BIT FLASH MEMORIES • • • • • • |_^ ^ _ Single Power Supply Supports 5-V ±10% Read/Write Operation O rganization:. 262144B y8 Bits Array-Blocking Architecture - One 16K-Byte Protected-Boot Sector

NCC equivalent

Contextual Info: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors

44c256

Abstract: 3034C
Contextual Info: SMJ44C256 262144 BY 4-BIT DYNAMIC RANDOM-ACCESS MEMORY _ SGMS034C - MAY 1989 - B E V ILO JUNE 1965 Organization. . . 262144 Words x 4 Bits Single 5-V Supply 10% Tolerance Processed to MIL-STD-833, Class B Performance Ranges: 3-State Unlatched Output

tms jl 27C256-15

Abstract: tms jl 27c256-12 tms jl 27C256-10 TMS JL 27C256-20 TMS JE 27C256-15
Contextual Info: TMS27C256 32768 BY 8-BIT UV ERASABLE TMS27PC256 32768 BY 8-BIT PROGRAMMABLE READ-ONLY MEMORIES _ SMLS25BH- SEPTEMBER 1964 - REVISED NOVEMSER 1997 Organization . . . 32768 by 8 Bits J PACKAGE TO P VIEW Single 5-V Power Supply Pin Compatible With Existing 256K MOS

9262E

Contextual Info: SMJ27C256 262 144-BIT UV ERASABLE PROGRAMMABLE READ-ONLY MEMORY SGMS005D-MAY 1986-REVISED FEBRUARY 1993 Military Operating Temperature Range . . . - 55°C to 125°C J P A C K A G ET T O P V IE W MIL-STD-883C Class B High-Reliabillity Processing Organization . . . 32K

Contextual Info: MITSUBISHI LSIs M5M5255BP, BFP, BKP-70,-85,-10,-12.-70L, -85L,- 10L,- 12L,-70LL,-85LL,- 10LL,-12LL 2 6 2 1 4 4 -B IT 3 2 7 6 8 -W 0 R D BY 8-BIT CM O S STATIC RAM DESCRIPTION The M5M5255BP, BFP, BKP is a 262144-bit CMOS static RAM organized as 32768-words by 8-bits which is fabri­

M66287FP

Abstract: 262-141
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: October 1989 Edition 2.0 DATA SHEET MBM10C500-15 262144-BIT BICMOS ECL RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu M8M10C500 is fully decoded 262144 bit BICMOS ECL random access memory designed for main memory, control and buffer storage applications. This device is organized

Contextual Info: UPD43256BGX-B12-EJA 1/2 IL16 ∗∗∗∗∗ C-MOS 256k (32kx8) BIT STATIC RAM –TOP VIEW– OE A11 A9 A8 A13 WE A14 A12 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 NC NC VDD (+2.7 to 5.5V) GND NC A0-14 ; ADDRESS INPUTS I/O1-18 ; DATA INPUTS/OUTPUTS

structure processor pentium3

Abstract: laptops power ic S5U1C33001H S1C33000 S1C33L01 S5U1C33001C em 328 epson S1C33 BT 342 project 29LV800te
Contextual Info: CMOS 32-BIT SINGLE CHIP MICROCOMPUTER S5U1C33001C Manual C/C+ Compiler Package for S1C33 Family (Ver. 3.3.0) NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not

AK6516CF

Abstract: EEPROM AK6516C power supply 5v X101 X110
Contextual Info: ASAHI KASEI [AK6516C] AK6516C SPI bus 256Kbit Serial CMOS EEPROM Features … Advanced CMOS EEPROM Technology … Single Voltage Supply: 1.6V to 5.5V … 256Kbits; 32768 x 8 organization … SPI Serial Interface Compatible … Low Power Consumption 0.8µA Max. Standby mode

D43256A

Abstract: TINA NEC electronics upd43256a
Contextual Info: E C ELECTRONICS INC NEC ELECTRON DEVICE / b2E D • b4S75E5 OOBSbMT fiTfi M N E C E s h e e MOS t INTEGRATED CIRCUIT ¿¿PD43256A 256K-BIT CMOS STATIC RAM EXTEN DED TEMPERATURE VERSIO N DESCRIPTION The ¿¿PD43256A is a high speed, low power, 32K words by 8 bits CMOS static RAM fabricated with advanced

M5M5256DP

Abstract: M5M5256DVP m5m5256dkp
Contextual Info: '97.4.7 MITSUBISHI LSIs M5M5256DP,KP,FP,VP,RV -45LL-I,-55LL-I,-70LL-I, -45XL-I,-55XL-I,-70XL-I 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION FEATURE Access Power supply current time Active Stand-by (max) (max) (max) Type M5M5256DP, KP, FP,VP,RV-45LL

M5M5258DP

Abstract: M5M5258D J-12 M5M5258D-15 65536-WORD
Contextual Info: MITSUBISHI LSIs MITSUBISHI LSIs M5M5258DP,J-12,-15,-20,-15L,-20L M5M5258DP,J-12,-15,-20,-15L,-20L 262144-BIT 65536-WORD BYBY 4-BIT CMOS STATIC RAM 262144-BIT (65536-WORD 4-BIT) CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M5258D is a family of 65536-word by 4-bit static RAMs,

Contextual Info: MITSUBISHI LS Is M5M5255BP,FP,KP-70,-85,-10,-12,-70L,-85L, -10L,-12L,-70LL,-85LL,-10LL,-12LL 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION fh e M 5M 5255BP, FP, KP is a 2 6 2144 bit CMOS static RAM PIN CONFIGURATION (TOP VIEW) organized as 32768-w ords by 8-bits w hich is fabricated using

Contextual Info: MITSUBISHI LSIs M5M52B78AJ- 8 ,-10,-12 262144-BIT (32768-WORD BY 8-BIT) BiCMOS STATIC RAM DESCRIPTION The M5M52B78 is a family of 32768-word by 8-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated with the high performance BiCMOS process and designed for

Contextual Info: MITSUBISHI LSIs M5M5278DP,J,FP,VP-20V,-25V 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) th e M 5M 5278D is a family of 32768-word by 8-bit static RAMs, fabricated with the high-performance C M O S silicon-gate MOS

m5m5278

Contextual Info: MITSUBISHI LS Is M5M5278P, J-15,-20,-25,-35 M5M5278FP-25.-35 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5278 is a family of 32768-word by 8-bit static RAMs, fabricated with the high-performance CMOS silicon- PIN CONFIGURATION (TOP VIEW)

H5M5256

Contextual Info: MITSUBISHI LSIs M5M5256CP,FP,KP,VP,RV-85LL,-85XL, -10LL.-10XL 262144-BIT 32768-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION This M 5M 5256CP.FP.KP.VP,RV is a 2 6 2144- b it CMOS static RAMs organized as 3 2 7 68 -w ords by 8 -b its which is fabricated using high-performance 3 polysilicon CMOS

M5M5257CP

Contextual Info: MITSUBISHI LS Is M5M5257CP,J-15,-20,-25,-35, -20L,-25L,-35L 262144-BIT 262144-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION The M 5M 5257C is a fam ily o f 262144-w ord by 1-bit static PIN CONFIGURATION (TO P VIEW) 3AMs, fabricated w ith the high-performance CMOS silicongate

5257B

Abstract: 10 35L m5m5257
Contextual Info: MITSUBISHI LS Is M 5 M 5 2 5 7 B P , J - 1 5 ,- 1 7 ,-2 0 ,- 2 5 ,- 3 5 , -2 0 L ,-2 5 L ,-3 5 L 262144-BIT 262144-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION ''h e M 5M 5257B is a fam ily o f 262144-w ord by 1-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated w ith the high-performance CMOS silicongate

M5M5257CP

Abstract: M5M5257C-35-35L
Contextual Info: MITSUBISHI LS Is M5M5257CP, J-15,-20,-25,-35, -20L,-25L,-35L 262144-BIT 262144-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) T h e M 5 M 5 2 5 7 C is a fa m ily o f 2 6 2 1 4 4 -w o rd b y 1-bit s ta tic R A M s, fa b rica te d w ith th e hig h -p erform a n ce CMOS silicongate

M5M5258cp

Abstract: 10 35L 5258C 10 35L A8
Contextual Info: MITSUBISHI LS Is M5M5258CP, J-15,-20,-25,-35, -20L,-25L,-35L 262144-BIT 65536-WORD BY 4-BIT CMOS STATIC RAM DESCRIPTION The M 5M 5258C is a fam ily o f 6 5 5 3 6 w ord by 4-bit static PIN CONFIGURATION (TOP VIEW) RAMs, fabricated w ith the high-performance CMOS silicongate

262144-word

Abstract: 1BIT CMOS STATIC RAM
Contextual Info: MITSUBISHI LS Is M5M5257BP, J-15,-20,-25 262144-BIT 262144-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION The M5M5257B is a family of 262144-word by 1-bit static RAMs, fabricated with the high-performance CMOS silicongate MOS process and designed for high-speed application. These