268 DARLINGTON Search Results

MJD122

Contextual Info: DC COMPONENTS CO., LTD. R MJD122 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low speed switching applications. TO-252 DPAK Pinning .268(6.80) .252(6.40) 1 = Base

power transistor Ic 4A NPN to - 251

Abstract: MID122
Contextual Info: DC COMPONENTS CO., LTD. R MID122 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for use in general purpose amplifier and low speed switching applications. TO-251 Pinning .268 6.80 .252(6.40) 1 = Base 2 = Collector

40N140

Abstract: 40N160
Contextual Info: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBJ 40N140 IXBJ 40N160 VCES IC25 VCE sat tfi = = = = 1400/1600 V 33 A 7.1 V 40 ns N-Channel, Enhancement Mode C G E Symbol Test Conditions Maximum Ratings 40N140 40N160 TO-268 VCES TJ = 25°C to 150°C

IXBH 40N160

Abstract: IXBJ 40N160 40N140 40N160
Contextual Info: High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor IXBJ 40N140 IXBJ 40N160 VCES IC25 VCE sat tfi = = = = 1400/1600 V 33 A 7.1 V 40 ns N-Channel, Enhancement Mode C G E Symbol Test Conditions Maximum Ratings 40N140 40N160 TO-268 VCES TJ = 25°C to 150°C

MID117

Contextual Info: DC COMPONENTS CO., LTD. R MID117 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR Description Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and amplifiers.

power transistor Ic 4A NPN to - 251

Abstract: MID112 VCEO100
Contextual Info: DC COMPONENTS CO., LTD. R MID112 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and amplifiers.

optocoupler 8 pin configuration

Abstract: 6H13 LH1539AAC LH1539AB 8 pin optocoupler configuration optocoupler darlington output CTR CAPACITOR Ssr optocoupler receptor infrared
Contextual Info: LH1539 1 FORM A / PHOTO DARLINGTON FEATURES • Solid state relay and autopolarity optocoupler in one 8-pin package • 3750 VRMS I/O isolation • Surface mountable • Optocoupler — Bidirectional current detection — High CTR: >300% • Solid state relay

Contextual Info: LH1539 SIEMENS 1 FORM A / PHOTO DARLINGTON FEATURES • Solid state relay and autopolarity optocoupler In one 8-pin package • 3750 VRMS I/O isolation • Surface mountable • Optocoupler — Bidirectional current detection — High CTR: >300% • Solid state relay

OPTOCOUPLER dc

Abstract: bidirectional optocoupler LH1525 LH1539AAC LH1539AACTR LH1539AB Ssr optocoupler transistor AC Switch a 3150 OPTOCOUPLER
Contextual Info: LH1539AB/AAC/AACTR 1 Form A Photo Darlington Telecomswitch FEATURES • Solid State Relay and Autopolarity Optocoupler in One 8-pin Package • I/O Isolation, 5300 VRMS • Surface Mountable • Optocoupler – Bidirectional Current Detection – High CTR: >300%

A 3150 v opto

Abstract: A 3150 opto LH1525 LH1539AAC LH1539AACTR LH1539AB
Contextual Info: LH1539AB/AAC/AACTR 1 Form A Photo Darlington Telecomswitch FEATURES Package Dimensions in Inches mm • Solid State Relay and Autopolarity Optocoupler in One 8-pin Package • I/O Isolation, 5300 VRMS • Flammability; UL94,VØ • Surface Mountable • Optocoupler

MJD117

Abstract: DPAK
Contextual Info: DC COMPONENTS CO., LTD. R MJD117 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR Description Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and amplifiers.

transistor 2A 3v

Abstract: MJD112
Contextual Info: DC COMPONENTS CO., LTD. MJD112 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and amplifiers.

LH1525

Abstract: LH1539AAC LH1539AACTR LH1539AB Ssr optocoupler
Contextual Info: LH1539AB/AAC/AACTR 1 Form A Photo Darlington Telecomswitch FEATURES Package Dimensions in Inches mm • Solid State Relay and Autopolarity Optocoupler in One 8-pin Package • I/O Isolation, 5300 VRMS • Surface Mountable • Optocoupler – Bidirectional Current Detection

Contextual Info: VISHAY LH1539AAC/ AACTR/ AB Vishay Semiconductors 1 Form A Photo Darlington Telecomswitch SMD DIP Features • Solid State Relay and Autopolarity Optocoupler in One 8-pin Package • Isolation Test Voltage, 5300 VRMS • Surface Mountable • Optocoupler - Bidirectional Current Detection

44C6

Contextual Info: C JD 122 C JD 127 Central Sem icon du ctor Corp. NPN PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122, CJD127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low

Contextual Info: j à s t Æ Ê T * c g iw c ii H»nilr«nfliirffir coro. CJD122 NPN CJD127 PNP flnWlIII^NniVBwWSwl COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DftKI!" g8FW DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122, CJD127 types are Complementary Silicon Power Darlington Transistors manufactured

Contextual Info: Central Semiconductor Corp. CJD112 NPN CJD117 PNP COM PLEM ENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR C JD 112, CJD117 types are Com plementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low

transistor RJp 30

Abstract: transistor RJp
Contextual Info: cen trai B àtÊÊÈ # CJD112 CÜD117 NPN PNP ÉRtfMMMfclíáMUMfcMfc4Éíifllfl4RdfcUNMHÍ ÉPBtfMMttMh SP^üP*t§R^pïWHWJMyP^EiiCÇPIF lü^BPerjpp* COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD112, CJD117 types are Complementary Silicon

CJD127

Abstract: CJD122
Contextual Info: Central" Semiconductor Corp. CJD122 NPN CJD127 PNP COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD122, CJD127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low

cev code

Abstract: CJD112 CJD117
Contextual Info: Central CJD112 NPN CJD117 PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CJD 112 , CJD117 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low

optocoupler bi-directional

Contextual Info: VISHAY LH1539AAC/ AACTR/ AB Vishay Semiconductors 1 Form A Photo Darlington Telecomswitch SMD DIP Features • Solid State Relay and Autopolarity Optocoupler in One 8-pin Package • Isolation Test Voltage, 5300 VRMS • Surface Mountable • Optocoupler - Bidirectional Current Detection

210 optocoupler

Abstract: LH1525 LH1539AAC LH1539AACTR LH1539AB
Contextual Info: VISHAY LH1539AAC/ AACTR/ AB Vishay Semiconductors 1 Form A Photo Darlington Telecomswitch SMD DIP Features • Solid State Relay and Autopolarity Optocoupler in One 8-pin Package • Isolation Test Voltage, 5300 VRMS • Surface Mountable • Optocoupler - Bidirectional Current Detection

H11K1

Abstract: H11K
Contextual Info: Optoisolator Specifications H11K1, H11K2 Optoisolator GaAIAs Infrared Emitting Diode and Two NPN Silicon Photo-Darlington Amplifiers T h e H I IK series consists o f a gallium -alum inum -arsenide, infrared em itting diode coupled with two high voltage silicon Darlingtonconnected phocotransistors which have integral base-emitter resistors

TRANSISTOR JC

Abstract: TRANSISTOR MODULE DUAL DARLINGTON 200 Ampere power transistor KD7212A2 kd7212 isa1200
Contextual Info: 7 2 9 4 6 2 1 POWEREX INC ïfl D e J 7E1Mti2Ì 00022b5 <W E H E X 1 D 'T z- 3 3 - 3 S ' KD7212A2 Powerex, Inc., Hillls Street, Ybungwood, Pennsylvania 15697 412 925-7272 D U S l D d r lin C f t O f l Transistor Module 25 Amperes/1200 Volts Description Powerex Dual Darlington Transistor