26APR07 Search Results

Contextual Info: 3 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. 2 - ,- REVISIONS LOC DIST DF DO P DESCRIPTION J - . 3 2 3 + . 00 2 [8.204+. 0 5 1] 33 ,- 33 LTR DATE DWN 26APR07 REV PER ECO 0 7 -0 0 9 5 3 6

Contextual Info: TH I S DRAW I NG IS UNPUBLI SHED. C O P Y R I G HT 2 0 RELEASED BY TYCO ELECTRONICS CORPORATION. FOR ALL 20 PUBLICATION R 1G H T S LOC RESERVED. D I ST R E V 00 GP LTR I S I O N S DESCRIPTION DWN DATE NEW R E L E A S E 26APR2ÛÛ7 APVD RG DO . 055 400 r “\

ESDA14V2

Abstract: ESDA25 30156
Contextual Info: ESDAxx Series Dual transil array for ESD protection P b Lead Pb -Free Description: * The ESDAxx is a dual monolithic voltage suppressor designed to protect components which are connected to data and transmission lines against ESD. It clamps the voltage just above the logic level supply for positive transients,

Contextual Info: TH I S DRAW I NG IS UNPUBLI SHED. C O P Y R I G HT 2 0 RELEASED BY TYCO ELECTRONICS CORPORATION. FOR ALL 20 PUBLICATION R 1G H T S LOC RESERVED. D I ST R E V 00 GP LTR I S I O N S DESCRIPTION DWN DATE NEW R E L E A S E 26APR2ÛÛ7 APVD RG DO . 055 400 [7 Í 9 h = ! =H40

Contextual Info: 6.0-18.0 GHz GaAs MMIC Power Amplifier CMM0618-BD April 2007 - Rev 26-Apr-07 Features Chip Device Layout Wide Band Power Amplifier Positive Gain Slope 10.5 dB Small Signal Gain +29.0 dBm P1dB Compression Point +36.0 dBm Third Order Intercept 100% Visual Inspection to MIL-STD-883

VJ C0G

Abstract: VJ0805 VJ1206 VJ1210 VJ1808 VJ1812 vj1210 capacitor
Contextual Info: Key Benefits • Average voltage breakdown VBD is typically twice that of standard commercial-grade products • Offer capacitance ranges of 100 pF to 0.27 µF • High capacitance and small case sizes save board space (compared to standard high-voltage MLCCs)

Contextual Info: VESD05A1B-02Z Vishay Semiconductors ESD-Protection Diode in SOD923 Features • • • • • • • • • • • Single-line ESD-Protection device ESD-Immunity acc. IEC 61000-4-2 e3 > 20 kV contact discharge > 30 kV air discharge Tiny SOD923 package

45056

Contextual Info: VJ HVArc Guard C0G NP0 Vishay Vitramon Multilayer Ceramic Capacitors that Prohibit Surface Arc-over in High Voltage Applications FEATURES For this Worldwide Patent-Pending Technology • Surface-mountable, multilayer ceramic capacitors, that protect against surface arc-over RoHS

RF wafer

Abstract: CMM0014-BD CMM0014-BD-000V DM6030HK M380 TS3332LD
Contextual Info: 2.0-22.0 GHz GaAs MMIC Power Amplifier CMM0014-BD April 2007 - Rev 26-Apr-07 Features Chip Device Layout Ultra Wide Band Power Amplifier Compact Size/Self Bias Architecture 11.5 dB Small Signal Gain +24.0 dBm P1dB Compression Point +35.0 dBm Third Order Intercept

Contextual Info: 30ETH06SPbF/30ETH06-1PbF Vishay High Power Products Hyperfast Rectifier FEATURES 30ETH06-1PbF 30ETH06SPbF • Hyperfast recovery time Available • Low forward voltage drop RoHS* • Low leakage current COMPLIANT • 175 °C operating junction temperature

tanaka gold wire 1.0 mil

Abstract: m430 f CMM0015-BD-000V tanaka gold wire M430 tanaka epoxy tanaka gold wire data sheet tanaka wire 1.4 VIREO usb mp3 module circuit diagram CMM0015-BD
Contextual Info: 2.0-22.0 GHz GaAs MMIC Power Amplifier CMM0015-BD April 2007 - Rev 26-Apr-07 Features Chip Device Layout Ultra Wide Band Power Amplifier Compact Size/Self Bias Architecture Positive Gain Slope 11.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point +38.0 dBm Third Order Intercept

BD 149 transistor

Abstract: tanaka gold wire 1.0 mil piconics Resistor CMM0014-BD tanaka epoxy transistor BD 140 CMM0014-BD-000V DM6030HK M380 TS3332LD
Contextual Info: 2.0-22.0 GHz GaAs MMIC Power Amplifier CMM0014-BD April 2007 - Rev 26-Apr-07 Features Chip Device Layout Ultra Wide Band Power Amplifier Compact Size/Self Bias Architecture 11.5 dB Small Signal Gain +24.0 dBm P1dB Compression Point +35.0 dBm Third Order Intercept

Contextual Info: 4 TH 1S DRAW 1NG C 3 1S U N P U B L 1S HE D. R E L E A S E D FOR P U B L I C A T I O N BY T Y C O E L E C T R O N I C S C O R P O R A T I O N . A L L C O P Y R I G H T 20 R 1C H T S 20 LOC GP RESERVED. D I ST R E V IS I O N S 00 DESCRIPTION LTR DWN DATE

tetra-etch

Abstract: MR1-350-130 Gore tetra etch PCT-2M 430-FST 136-awp 134-AWP MR1-350-127 M-line accessories MCA-2 EPOXYLITE 813
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book strain gage accessories vishay micro-measurements vse-db0065-0707 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: VJ HVArc Guard X7R Vishay Vitramon Multilayer Ceramic Capacitors that Prohibit Surface Arc-over in High Voltage Applications FEATURES For this Worldwide Patent-Pending Technology • Surface-mountable, multilayer ceramic capacitors, that protect against surface arc-over RoHS

m430 f

Abstract: m430 VD100 tanaka gold wire 1.0 mil VIREO usb mp3 module circuit diagram CMM0015-BD CMM0015-BD-000V DM6030HK PB-CMM0015-BD-0000 TS3332LD
Contextual Info: 2.0-22.0 GHz GaAs MMIC Power Amplifier CMM0015-BD April 2007 - Rev 26-Apr-07 Features Chip Device Layout Ultra Wide Band Power Amplifier Compact Size/Self Bias Architecture Positive Gain Slope 11.0 dB Small Signal Gain +28.0 dBm P1dB Compression Point +38.0 dBm Third Order Intercept

Vishay Conditioner A

Abstract: H CEMENT GT-11 30ml H CEMENT installation
Contextual Info: H Cement Vishay Micro-Measurements Strain Gage Cement OTHER ACCESSORIES USED IN AN H CEMENT INSTALLATION: • CSM Degreaser or GC-6 Isopropyl Alcohol • Silicon-Carbide Paper • M-Prep Conditioner A • M-Prep Neutralizer 5A • GSP-1 Gauze Sponges • GT-11 Camel’s Hair Brush

Contextual Info: 2.0-22.0 GHz GaAs MMIC Power Amplifier CMM0016-BD April 2007 - Rev 26-Apr-07 Features Chip Device Layout Ultra Wide Band Power Amplifier Compact Size/Self Bias Architecture Positive Gain Slope 10.0 dB Small Signal Gain +30.0 dBm P1dB Compression Point +39.0 dBm Third Order Intercept

diode marking code U6

Abstract: diode zener ZD 260 LLP75-6A
Contextual Info: VBUS054B-HS3 Vishay Semiconductors 4-line BUS-port ESD-protection Features • • • • • Ultra compact LLP75-6A package 4-Line USB ESD-protection e3 Low leakage current Low load capacitance CD = 0.8 pF ESD-protection to IEC 61000-4-2 ± 15 kV contact discharge

Contextual Info: Crystek Corporation AVAILABLE PERFORMANCE SPECIFICATION Lower Frequency: Upper Frequency: Tuning Voltage: Supply Voltage: Output Power: Supply Current: Harmonic Suppression 2nd Harmonic : Pushing: Pulling, all Phases: Tuning Sensitivity: Phase Noise @ 10kHz offset: