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    26DEC11 Search Results

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    ROHM Semiconductor SCT4026DEC11

    750V, 26M, 3-PIN THD, TRENCH-STR
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    DigiKey SCT4026DEC11 Tube 4,887 1
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    Avnet Americas SCT4026DEC11 Tube 27 Weeks 450
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    Mouser Electronics SCT4026DEC11 672
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    Newark SCT4026DEC11 Bulk 440 1
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    TTI SCT4026DEC11 Tube 450 50
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    Chip1Stop SCT4026DEC11 Tube 834
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    CoreStaff Co Ltd SCT4026DEC11 450
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    SCT4026DEC11 163
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    New Advantage Corporation SCT4026DEC11 450 1
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    26DEC11 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original     		PDF SiR698DP 2002/95/EC SiR698DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SiA445EDJ

    Abstract: SIA445EDJ-T1-GE3
    Text: New Product SiA445EDJ Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) Max. ID (A) 0.0165 at VGS = - 4.5 V - 12a 0.0185 at VGS = - 3.7 V - 12a 0.0300 at VGS = - 2.5 V a Qg (Typ.) 23 nC - 12 PowerPAK SC-70-6L-Single


    Original     		PDF SiA445EDJ SC-70-6L-Single SC-70 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIA445EDJ-T1-GE3

    Untitled

    Abstract: No abstract text available
    Text: Si2302DDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) Max. ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2302DDS 2002/95/EC O-236 OT-23) Si2302DDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original     		PDF SiR698DP 2002/95/EC SiR698DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si8416DB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) Max. ID (A)d 0.023 at VGS = 4.5 V 16 0.025 at VGS = 2.5 V 16 0.030 at VGS = 1.8 V 16 0.040 at VGS = 1.5 V 15 0.095 at VGS = 1.2 V 3 VDS (V) 8 Qg (Typ.) 17 nC S •


    Original     		PDF Si8416DB 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original     		PDF SiR698DP 2002/95/EC SiR698DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI4554DY

    Abstract: si4554
    Text: Si4554DY Vishay Siliconix N- and P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 40 0.024 at VGS = 10 V 8e 0.026 at VGS = 8 V 8e 0.027 at VGS = 4.5 V 8 0.027 at VGS = - 10 V - 8e e 0.028 at VGS = - 8 V


    Original     		PDF Si4554DY Si4554DY-T1-GE3 2002/95/EC 11-Mar-11 si4554

    Untitled

    Abstract: No abstract text available
    Text: SiS410DN Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0048 at VGS = 10 V 35 0.0063 at VGS = 4.5 V 35 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		PDF SiS410DN 2002/95/EC SiS410DN-T1-GE3 11-Mar-11

    Marking Code 2526

    Abstract: No abstract text available
    Text: Si8416DB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) Max. ID (A)d 0.023 at VGS = 4.5 V 16 0.025 at VGS = 2.5 V 16 0.030 at VGS = 1.8 V 16 0.040 at VGS = 1.5 V 15 0.095 at VGS = 1.2 V 3 VDS (V) 8 Qg (Typ.) 17 nC S • •


    Original     		PDF Si8416DB 2002/95/EC 11-Mar-11 Marking Code 2526

    Untitled

    Abstract: No abstract text available
    Text: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original     		PDF SiR698DP 2002/95/EC SiR698DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si8416DB-T2-E1

    Abstract: SI8416DB 63716 si8416
    Text: Si8416DB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) Max. ID (A)d 0.023 at VGS = 4.5 V 16 0.025 at VGS = 2.5 V 16 0.030 at VGS = 1.8 V 16 0.040 at VGS = 1.5 V 15 0.095 at VGS = 1.2 V 3 VDS (V) 8 Qg (Typ.) 17 nC S • •


    Original     		PDF Si8416DB 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Si8416DB-T2-E1 63716 si8416

    Untitled

    Abstract: No abstract text available
    Text: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original     		PDF SiR698DP 2002/95/EC SiR698DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    DIODE 2524

    Abstract: No abstract text available
    Text: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET


    Original     		PDF SiR698DP 2002/95/EC SiR698DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 DIODE 2524

    si4554

    Abstract: si4554dy
    Text: Si4554DY Vishay Siliconix N- and P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P-Channel ID (A)a Qg (Typ.) RDS(on) (Ω) - 40 0.024 at VGS = 10 V 8e 0.026 at VGS = 8 V 8e 0.027 at VGS = 4.5 V 8 0.027 at VGS = - 10 V - 8e e 0.028 at VGS = - 8 V


    Original     		PDF Si4554DY Si4554DY-T1-GE3 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4554

    Untitled

    Abstract: No abstract text available
    Text: 2 4 T H IS D R A W IN G S U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - .- R E V IS IO N S 50 RESERVED. - LTR D E S C R IP T IO N R EVISED PER DATE E C R - 1 1-01 806 3 C O N T IN U O U S STRESS 26DEC11 S TR IP


    OCR Scan     		PDF 26DEC11 65555P

    Untitled

    Abstract: No abstract text available
    Text: 4 T H IS D R A W IN G S 2 U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - R E V IS IO N S .- 50 RESERVED. - LTR D E S C R IP T IO N R EVISED PER DATE E C R - 1 1-01 806 3 26DEC11 DWN APVD KH PD P D 1 CONTINUOUS


    OCR Scan     		PDF 26DEC11

    Untitled

    Abstract: No abstract text available
    Text: 2 4 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS R E V IS IO N S 50 RESERVED. - LTR D E S C R IP T IO N R EVISED PER DATE E C R - 1 1-01 806 3 26DEC11 DWN APVD KH PD D 1 CONTINUOUS STRIP


    OCR Scan     		PDF 26DEC11

    Untitled

    Abstract: No abstract text available
    Text: 4 T H IS D R A W IN G IS 2 U N P U B L IS H E D . RELEASED FO R ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS - .- R E V IS IO N S RESERVED. 50 - LTR D E S C R IP T IO N R EVISED PER DATE E C R - 1 1-01 806 3 26DEC11 DWN A PVD KH PD D 7.62 [730CT]-


    OCR Scan     		PDF 26DEC11

    Untitled

    Abstract: No abstract text available
    Text: NOTES: 1. MATERIALS AND FINISHES PLATING THICKNESS IN MICRO-INCHES : BODY - BRASS, NICKEL PLATING CONTACT - BRASS, SILVER PLATING INSULATOR - COPOLYMER OF STYRENE 2 . ELECTRICAL: A. IMPEDANCE: 50 OHM B. FREQUENCY RANGE: DC 0 - 4 GHz C. DIELECTRIC WITHSTANDING VOLTAGE:


    OCR Scan     		PDF RD-DM11120601 10-Mar-08 07-Jan-10 26-Dec-11 5/8-24UNEF-2A -255/U" 12-Dec-11 24-Dec-09 \DWG\CNPD\2900-USZ

    Untitled

    Abstract: No abstract text available
    Text: R E VIS IO N S THIRD ANGLE PROJ. NOTES: 1. MATERIALS AND FINISHES PLATING THICKNESS IN MICRO-INCHES : BODY - BRASS, SILVER PLATING CONTACT - BRASS & BERYLLIUM COPPER, SILVER PLATING INSULATOR - PTFE, NATURAL 2 . ELECTRICAL: A. IMPEDANCE: 50 OHM B. FREQUENCY RANGE:


    OCR Scan     		PDF 05-Mar-08 21-Dec-09 26-Dec-11 Dec--11 21-Dec-09 12-Dec-11 \DWG\CNPD\31 \2208-AJSZ

    Untitled

    Abstract: No abstract text available
    Text: THIRD ANGLE PROJ. NOTES: 1. MATERIALS AND FINISHES BODY - BRASS, NICKEL PLATING CONTACT - BERYLLIUM COPPER, SILVER PLATING 2. 4. ELECTRICAL: A. IMPEDANCE: 50 OHM B. FREQUENCY RANGE: DC 0 - 4 GHz D. DIELECTRIC WITHSTANDING VOLTAGE: 1500 VRMS, MIN. MECHANICAL:


    OCR Scan     		PDF 59B/U 71B/U 140/U, 1120601R3 08-Dec-08' 26-Dec-1 RG-71 29--Jul--03 ec-11 \DWG\CNPD\31\15-TSZ

    Untitled

    Abstract: No abstract text available
    Text: R E V IS IO N S THIRD ANGLE PROJ. NOTES: 1. MATERIALS AND FINISHES BODY - BRASS, NICKEL PLATING CONTACT - BERYLLIUM COPPER, SILVER PLATING INSULATOR - PTFE ELECTRICAL: 2 A. IMPEDANCE: 50 OHM C. FREQUENCY RANGE: DC 0 - 1 1 GHz C. DIELECTRIC WITHSTANDING VOLTAGE:


    OCR Scan     		PDF RD-DM11 05-Mar-08 11-Dec-08 21-Dec-09 26-Dec-11 Dec--11 21-Dec-09 UG349A/U 12-Dec-11 \DWG\CNPD\31

    62553-1

    Abstract: No abstract text available
    Text: 2 4 T H IS D R A W IN G IS U N P U B L IS H E D . RELEASED EOR ALL C O P Y R IG H T By P U B L IC A T IO N R IG H TS REVISIO N S 50 RESERVED. - LTR D E S C R IP T IO N R EVISED D 1 1 .90 .075 1 .52 .060 PER CO NTINU O US 2 WIRE SIZE 3 INSULATION DATE E C R - 1 1-01 806 3


    OCR Scan     		PDF 26DEC11 77777f7777 62553-1

    Untitled

    Abstract: No abstract text available
    Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FOR A LL P U B L IC A T IO N R IG H TS RESERVED. C O P Y R IG H T D C I— .01 6 + .0 0 A 1471-9 3 / 11 LOC AF D IS T 50 REVISIO N S P LTR D E S C R IP T IO N P RE VISED 1 PER E C R - 1 1-01 8 0 6 3


    OCR Scan     		PDF 26DEC11