27 55B Search Results

DS099

Contextual Info: 1 Spartan-3 FPGA Family Data Sheet DS099 June 27, 2013 Module 1: Introduction and Ordering Information DS099 v3.1 June 27, 2013 Product Specification Module 4: Pinout Descriptions DS099 (v3.1) June 27, 2013 • Pin Descriptions • Introduction • Features

RNR70h

Abstract: RNR 55h s1000h
Contextual Info: Data sheet E 5/3.329 - 10497 RCMT VISHAY S.A. International Department 199, Boulevard de la Madeleine B.P. 1159 F 06003 NICE CEDEX 1 Tel. : 33 04 93 37 27 27 Fax. : (33) 04 93 37 27 26 0,1 W to 2 W at 125°C NF C 83-230 CECC 40 101-044 MIL-R-55182 moulded metal film

RTL8211E

Abstract: RTL8211CL reference Design MCP79 HS82117 rtl8211cl RTL8211 u9701 ISL6258A C5855 TC7SZ08AFEAPE
Contextual Info: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97 MLB SCHEMATIC A 625211 PRODUCTION RELEASED DATE 08/29/08 ? REFERENCED FROM T18 08/27/2008 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

IC 555 timer monostable

Abstract: timer ic 555 operated relay with time delay VOLTAGE LEVEL RELAY SM 125 220 156 Schematic diagram of DRO ada 8-lead 555 astable
Contextual Info: MIL-N-39510/109A NT ÎÔPlRSEDÎlQ MIL-K-3#510/109 BSAP 27 Juno 1977 MILITART SPRCIFICATIOR MICROCIRCUITS, LIREAR, PRECISXOR TIMERS, MOROLITHIC SILICOR Thia apeoifioation la approved for usa by all Depart* aenta and Ageaolea of ttaa Departaent of Defeass.

TDA 0200 SP

Abstract: Modulation FSK 8083 v150la10a F999 r6765 Rockwell Collins rockwell E3 plus similar lm386 4th-order bandpass filter 55b6
Contextual Info: RCVDL56DPFL/SP, RCV56DPFL/SP, and RCV336DPFL/SP Modem Data Pump Designer's Guide Preliminary Order No. 1119 February 27, 1997 RCVDL56DPFL/SP, RCV56DPFL/SP, and RCV336DPFL/SP Designer’s Guide NOTICE Information furnished by Rockwell International Corporation is believed to be accurate and reliable. However, no responsibility is assumed by

c6073

Abstract: C6074 C6091 C6089 1CA033 ar9103 SIL1178 NEC C3568 c6092 U2390
Contextual Info: 6 7 REV STD D CSA 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

C6073

Abstract: SIL1178 c6074 C9013 NEC C3568 c4793 c5885 K769 C6090 15B1 zener diode
Contextual Info: 8 6 7 REV STD D PDF CSA 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

Contextual Info: E2D0017-27-42 O K I Semiconductor M S M 6652/53/54/55/56-xxx, M SM 6652A/53A/ 54A/55A/56A/58A-xxx, MSM66P54-XX, MSM66P56-xx Under development , MSM6650 Internal Mask ROM Voice Synthesis 1C, Internal One-Time-Programmable (OTP) ROM Voice Synthesis 1C, External ROM Drive Voice Synthesis 1C

0P-37E

Abstract: OP-37 d2800 OP27AH OP37 0P27 LT1007 LT1037 OP-27 0p37
Contextual Info: u rm OP-27/OP-37 LoW Noise, High Speed Precision Operational Amplifiers TECHNOLOGY KflTURCS DCSCRIPTIOn • ■ ■ ■ ■ ■ ■ The 0 P -2 7/0 P -3 7 series of operational amplifiers combine outstanding noise performance with excellent precision and high speed specifications. The wideband noise is only

Contextual Info: 3875081 G E SO LID 0 1E STATE D 19656 Optoelectronic Specifications_ H A RR IS S E M I C O N D S E C T O R T 37E D B 4 3 02 27 1 0027116 1 -4 I- I HAS Infrared Emitter LED55B, LED55C, LED56, LED55BF, LED55CF, LED56F " Gallium Arsenide Infrared-Emitting Diode

hipot 665

Contextual Info: 850-2012:QuarkCatalogTempNew 8/27/12 8:52 AM Page 850 TEST & MEASUREMENT 8 3-Phase and Inlet Filters Corcom BCF Series — 3-Phase Compact Delta RFI Filters RoHS The BCF Series is compact, lightweight “bookform” filters ideal for applications requiring very high attenuation in the frequency range between 100 kHz and 30 MHz.

LA 7673

Abstract: CD4007B IC la 7673 CD4007BMS LA 7673 diagram
Contextual Info: H A RR IS S E M I C O N D S E C T O R SflE D • 430 5 27 1 0 D M M 4 7 b 025 M H A S CD4007UBMS iJJ December1992 CMOS Dual Complementary Pair Plus Inverter Features Pinout • High-Voltage Type 20V Rating CD4007UBMS TOP VIEW • Standardized Symmetrical Output Characteristics

faf41

Abstract: 744D MK-3B
Contextual Info: 123456789A A 1 1 1 A A A A 8 #6C633D28B92368$3DD8%8&B4'813748 27"C9728 B28 A 1 1 123456278 1 215AF7DAEF179AB9A1E719BB61C76A58D1 211F486D19BB617BDE5AF741 211 2!FED1DEF561"#$%1

B331 transistor

Abstract: transistor b331 Transistor B28D A 42 B331 transistor A 92 B331 transistor A 42 B331 transistor B324 KT 117A 851B52 intel 8049 microcomputer
Contextual Info: 1 AP-91 USING THE 8049 AS AN 80 COLUMN PRINTER CONTROLLER I. INTRODUCTION This A pplication N ote d eta ils u sin g I N T E L ’S 8049 m icrocom puter a s a d ot m atrix p rin ter controller. P re v io u s I N T E L A pplication n o tes, e.g. AP-27 and AP-54 d escrib e d usin g in telligen t p ro c e sso rs and p eri­

LA2 DT2

Abstract: CON10AP LA2 DS2 cdx3 PCI9030NM-PQFP176 DTRX3 TP491 24MHz 3.3v dtrx1 plx 9030
Contextual Info: 5 4 3 2 1 +V_I/O J22 SIDE B SIDE A D D NOTES: DO NOT INSTALL CON3 1 2 3 J24 10K_805 R8 +V_I/O -IRDY -DEVSEL -LOCK -PERR -SERR -C/BE1 AD14 AD12 AD10 52B 53B 54B 55B 56B 57B 58B 59B 60B 61B 62B AD8 AD7 +3.3V AD5 AD3 GND AD1 +V_I/O ACK64# +5V +5V 52 53 54 55

diode zener 6v2 BZX

Abstract: diode zener 9v1 BZX 55c 6V2 zener BZX 9v1 zener diode 5v6 diode BZX 79 B 4V7 bzx 3V9 ZENER DIODE zener BZX 55c 5v6 6V2 Zener Diode
Contextual Info: Stan dard Zen Zener er volta ge tole ranc e iiss 5% AND SUFF IX "BZX 55A " FFOR OR 1% SUFF IX "BZX 55B" FOR 2% SUFF IX "BZX 55C " FFOR OR 5% SUFF IX "BZX 55D " FFOR OR 20% 00.79 2.0 .799 (2 .7 (2.0 .0) M A X. MAX. 11.02(26.0) .022 (2 .0 (266 .0 .0) MIN.

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors N-channel logic level Product specification TrenchMOS(TM) FEATURES transistor SYMBOL PSMN005-55B;

SMD marking code 55B

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PSMN005-55B; PSMN005-55P N-channel logic level TrenchMOS TM transistor Product specification October 1999 Philips Semiconductors N-channel logic level Product specification TrenchMOS(TM) FEATURES transistor SYMBOL PSMN005-55B;

TC55B4257

Abstract: TC55B4257J A1712 A728A
Contextual Info: 262,144 W O R D x 4 BIT B iC M O S STATIC R A M PR ELIM IN AR Y DESCRIPTION The TC 55B4257P/J is a 1,048,576 bits high speed static random access memory organized as 262,144 words by 4 bits u sin g BiCMOS technology, and operated from a sin gle G-volt supply.

Contextual Info: T O S H IB A L O G I C / M E M O R Y 4ÖE ]> ^7240 2 6 2 ,1 4 4 W O R D x 4 BIT BiCM O S STATIC R A M 00553^0 b PRELIM INARY DESCRIPTION The T C 55B 4257P /J is a 1,048,576 bits high speed static random access memory organized as 262,144 words by 4 bits u sin g BiCM OS technology, and operated from a sin gle 6-volt supply,

93c45

Abstract: 93C65 AK93C45B AK93C55B AK93C65B AK93C75B 27 55b 65bh
Contextual Info: ASAHI KASEI [AK93C45B/55B/65B/75B] AK93C45B / 55B / 65B / 75B 1K / 2K / 4K / 8Kbit Serial CMOS EEPROM Features … ADVANCED CMOS EEPROM TECHNOLOGY … READ/WRITE NON-VOLATILE MEMORY … WIDE VCC OPERATION : VCC = 1.8V to 5.5V … AK93C45B ・・1024 bits, 64 x 16 organization

VF70T

Abstract: vf-70
Contextual Info: MATEC CORP/ VALPEY-FISHER b4E » 50blG2M 55b IVPC O S C ILLA TO R S • VF140G Series, VF70G , VF240G Series Gull Wing VF140-TG and VF70-TG TTL/HCMOS Com patible Hybrid Crystal Clock O scillators Valpey-Fisher offers all the features of its full-size, half-size, dual output and tri­

Contextual Info: 3UALITY T E CH N OL O GI E S CORP S7E ]> 74bbfl51 □□□430b 55b I ÖTY European “Pro Electron” Registered T y p e s _ CNY32 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e CNY32 is a gallium arsenide, in frared em itting d iode

BUK7511-55B

Abstract: BUK7611-55B BUK7E11-55B buk7611
Contextual Info: BUK75/76/7E11-55B TrenchMOS standard level FET Rev. 02 — 11 November 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.