2716 THOMSON Search Results

ETC800

Abstract: 2716 2716 eprom 2716 EPROM 24 PINS eprom 2716 Eurotechnique 27C16-55 eprom 27C16 memory 2716 ETC2716-1
Contextual Info: August 1983 ETC 2716 16.384-BIT 2048 x 8 U V Erasable C M O S P R O M ETC 2716-1 P a r a m e te r /P a r t N u m b e r ETC 2716 ETC 2716-5 ETC 2716-6 450 550 650 350 Access Tim e (ns) Active Current (m A a 1 M H z) Standby Current (mA) 5 5 5 5 0,1 0,1 0,1

M2716-1F1

Abstract: M2716F1 M2716-F1 SGS-THOMSON M2716F1 et2716 eprom ET2716Q
Contextual Info: SGS-THOMSON G ì, ET2716 M 2716 mi 16K 2K x 8 NMOS UV EPROM 2048 x 8 ORGANIZATION. 525 MW MAX ACTIVE POWER, 132 MW MAX STANDBY POWER. ACCESS TIME M/ET2716-1,350 ns ; M/ET2716, 450 ns. SINGLE 5V SUPPLY. STATIC-NO CLOCKS REQUIRED. INPUTS AND OUTPUTS TTL COMPATIBLE

Contextual Info: /T T SGS-THOMSON ^7# ETC2716 [ÜD g[K](Q |[L[l(g¥ (Q)K!]0(gi 16K BIT (2K x 8) CMOS UV ERASABLE PROM • CMOS POWER CONSUMPTION ■ PERFORMANCE COMPATIBLE TO MARKET STANDARD 8-BIT CMOS MICROP. ■ 2048 x 8 ORGANISATION ■ PIN COMPATIBLE TO 2716 ■ ACCESS TIME DOWN TO 350 ns

M2716-1F1

Abstract: M2716F1 SGS M2716 m27161f1 bull thomson M2716-F1 M2716 SGS ET2716Q DIP-24 ET2716
Contextual Info: 7 e!EJ S 3_7_0D.2731.2_7 • S G S -T H O M S O N Ü L iÊ T O R D D Ê i _ ET2716 M 2716 3QZ * 16K 2K x 8 NMOS UV ERASABLE PROM S G S-THOMSON ■ 2048 x 8 ORGANIZATION ■ 525 MW MAX ACTIVE POWER, 132 MW MAX STANDBY POWER ■ LOW POWER DURING PROGRAMMING

2716A EPROM

Abstract: 2716A eprom 2716a
Contextual Info: SGS-THOMSON *7#. G NMOS 16K 2K x 8 UV EPROM • 2048 x 8 ORGANIZATION ■ 525 mW Max ACTIVE POWER, 132 mW Max STANDBY POWER ■ ACC ESS TIME: - M2716-1 is 350ns - M2716 is 450ns ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED ■ INPUTS AND O U TPU TS TTL COMPATIBLE

transistor cross reference

Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Contextual Info: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC

Contextual Info: , SCS-THOMSON r. S T V 2 10 0 ö ä im i iu ic t i m » PAL LUMA-CHROMA& DEFLECTION PROCESSOR PRELIMINAY DATA - FEW EXTERNAL COMPONENTS • RGB AND FAST BLANKING INPUTS ■ DC-CONTROLLED BRIGHTNESS, CON­ TRAST AND SATURATION ■ CERAMIC 500kHz VCO FOR LINE DEFLEC­

2532 eprom

Abstract: 2732 eprom 2332 eprom interfacing the 2732 eprom eprom 2532 M2333-2732 M2332-2532 2716 2732 memory chip eprom 2716
Contextual Info: SGS-THOMSON M2332 M [E â i[L[i(g¥[E»0(gi_ M2333 32K-BIT READ ONLY MEMORY • M2332-2532 EPROM PIN COMPATIBLE ■ M2333-2732 EPROM PIN COMPATIBLE ■ SINGLE + 5V ±10°/o POWER SUPPLY ■ ACCESS TIME 250ns (MAX) ■ COMPLETELY STATIC OPERATION

Halbleiterbauelemente DDR

Abstract: transistor vergleichsliste u82720 Datenblattsammlung VEB mikroelektronik aktive elektronische bauelemente ddr mikroelektronik datenblattsammlung je 3055 Motorola mikroelektronik DDR Transistor Vergleichsliste DDR
Contextual Info: íx}i3í iu ]9n;g'q s p o s i l i o j p j S j © DNmiAf W¥S±±na N31¥Q >l!UDüq>|! ZUR B E A C H T U N G Die vorliegenden Datenblätter beinhalten ausführliche technische Angaben von aktiven elektronischen Bauelementen des in den "Listen Elektronischer Bauelemente und Bausteine" LEB)

1N919

Abstract: PA6AD minibar AC 126 CRC16 EF6801 EF6804J2 EF6805 SN74LS04 SN74LS126A EF6800
Contextual Info: rZ7 SGS-THOMSON m g T M M O S E F 6 8 0 4 J 2 8 BIT MICROCOMPUTER HARDW ARE FEATURES • 5-VOLT SINGLE SUPPLY ■ 32 BYTES OF RAM ■ M EMORY MAPPED I/O . 1 0 1 2 BYTES OF PROGRAM ROM ■ 64 BYTES OF DATA ROM ■ 12 BIDIRECTIONAL I/O LINES eight lines with

Contextual Info: /= # SGS-THOMSON M2716 NMOS 16K 2K x 8 UV EPROM • 2048 x 8 ORGANIZATION ■ 525 mW Max ACTIVE POWER, 132 mW Max STANDBY POWER ■ ACCESS TIME: - M2716-1 is 350ns - M2716 is 450ns ■ SINGLE 5V SUPPLY VOLTAGE ■ STATIC-NO CLOCKS REQUIRED ■ INPUTS AND OUTPUTS TTL COMPATIBLE

Contextual Info: £ÿj SGS-THOMSON EF6804P2 8 BIT MICROCOMPUTER May 1989 - ’ ’" " W CB132 P Plastic Package CB520 FN (PLCC28) PIN CO NNECTIONS v ss C 1 • '- ^ 28 RËSfcï IRQ Ç ? 11 PA/ 3 26 PA6 C4 25 PAS vcc EXTAl i; 5 24 PA4 MDS t 6 23 PA3 X TAL I 7 22 »A7 PCO ( B

eprom 2532

Abstract: 2732 eprom 2532 eprom 910U 2716 eprom pin diagram of ic 2732 2716 eprom datasheet
Contextual Info: / I T SC S-TH O M SO N ^7# RfflO ê^(ô i[L[l(gIiF^(5)R!]Q i M2332 M2333 32K-BIT READ ONLY MEMORY • M2332-2532 EPROM PIN COMPATIBLE ■ M2333-2732 EPROM PIN COMPATIBLE ■ SINGLE + 5V ± 10% POWER SUPPLY ■ ACCESS TIME 250ns (MAX) ■ COMPLETELY STATIC OPERATION

T1200B-RC-110

Abstract: T1205A T1203 T1200 JcAir Data 400 arinc 429 T-1202 application notes on ARINC-429 receiver t1201 T1202
Contextual Info: Avionics T1200B ARINC 429 CONTROL DISPLAY UNIT The one test set that covers the entire spectrum of the avionics industry • External 12 inch touch screen display allows main unit to be located away from operation • PS-2 style mouse may be used with or without touch screen

Contextual Info: r Z Z SGS-THOMSON M iE œ & ia m iie s MKI48Z02 MKI48Z12 CMOS 2K x 8 ZEROPOWER SRAM * INDUSTRIAL TEMPERATURE RANGE - 40°C to + 85°C. • PREDICTED WORST CASE BATTERY LIFE OF 6 YEARS @ 85°C. ■ DATA RETENTION IN THE ABSENCE OF POWER. ■ DATA SECURITY PROVIDED BY AUTOMATIC

48z02

Abstract: PHDIP24
Contextual Info: r= Z SCS-THOMSON IM g^ [iL[i©YGM]0(gS MK48Z02 MK48Z12 CMOS 2K x 8 ZEROPOWER SRAM • PREDICTED WORST CASE BATTERY LIFE OF 11 YEARS @ 70°C ■ DATA RETENTION IN THE ABSENCE OF POWER ■ DATA SECURITY PROVIDED BY AUTOMATIC WRITE PROTECTION DURING POWER FAILURE

MKI48Z12

Abstract: SGS 2716 eprom
Contextual Info: rz7 SGS-THOMSON M K I4 8 Z 0 2 ^ 7 # M K I4 8 Z 1 2 CMOS 2K x 8 ZEROPOWER SRAM • INDUSTRIAL TEMPERATURE RANGE - 40°C to + 85°C. ■ PREDICTED WORST CASE BATTERY LIFE OF 6 YEARS @ 85°C. ■ DATA RETENTION IN THE ABSENCE OF POWER. ■ DATA SECURITY PROVIDED BY AUTOMATIC

3066

Abstract: Zeropower ram MK48Z12
Contextual Info: MK48Z02 MK48Z12 f Z T SGS-THOMSON ^ 7 # iK g i a iC T ^ © iD © s CMOS 2K x 8 ZEROPOWER SRAM » PREDICTED WORST CASE BATTERY LIFE OF 11 YEARS @ 70°C • DATA RETENTION IN THE ABSENCE OF POWER ■ DATA SECURITY PROVIDED BY AUTOMATIC WRITE PROTECTION DURING POWER

48z02

Abstract: MK48Z02 VA00603 Zeropower ram MK48Z02 MK48Z12 Zeropower ram MK48Z12 PHDIP24 MK4BZ
Contextual Info: 52E D • 71 212 37 0036341= 337 MSGTH T - ¥ ^ ~ Z 3 ^ / 2 - SGS-THOMSON MK48Z02 KLKSIMKS_ MK48Z12 S 6 S-THOMSON CMOS 2K x 8 ZEROPOWER SRAM ■ PREDICTED WORST CASE BATTERY LIFE OF 11 YEARS @ 70°C ■ DATA RETENTION IN THE ABSENCE OF POWER - DATA SECURITY PROVIDED BY AUTOMATIC

Contextual Info: SEE D • 7 t12ci 2 3 7 G03Ô3SÛ OST ■ SGTH T - V é - Z J - / 2 - SGS-THOMSON *^ e [i[Li(gTm(Q*S MKI48Z02 MKI48Z12 S 6 S-THOMSON CMOS 2K x 8 ZEROPOWER SRAM ■ INDUSTRIAL TEMPERATURE RANGE - 40°C to + 85°C. ■ PREDICTED WORST CASE BATTERY LIFE OF 6 YEARS @ 85°C.

LEAPER-3

Abstract: 74189 7489 sram 4N34 89C51 interfacing with lcd display ic 74192 pin configuration interfacing 20x4 LCD with 89c51 IC 74189 DATA LEAP-U1 LEAPER-10 driver
Contextual Info: COMPANY PROFILE 1 Leap Electronic was established in 1980 located in Taipei Taiwan. With great experienced employees, Leap has dedicated on test equipment and provided a whole and perfect environment of development. Additional, the Company has been qualified by major IC manufacturer such as ATMEL, AMD, MICROCHIP, WINBOND,etc.

et273

Contextual Info: SGS-THOMSON EF68HC04P3 HCMOS 8-BIT MICROCOMPUTER P R E L IM IN A R Y IN F O R M A T IO N S E C T IO N 1 - IN T R O D U C T IO N The EF68HC04P3 m icrocom puter unit MCU is a m em ber of the EF68HC04 family of very low cost and low power single chip m icrocomputers. This 8

Mostek 2716

Abstract: CMOS-440
Contextual Info: S G S-THOHSON a?» 87D 10299 T T | Dr 7 ^ 2 3 7 □ G lD H T 'i f-46-23-12 FEATURES □ Predicted worst case battery life of 11 years @ 70°C □ Data retention in the absence of power □ Data security provided by automatic write protection during power failure

Zeropower ram MK48Z

Abstract: MOSTEK MEMORY MK48Z02-12 Zeropower ram MK48Z12 Mostek 2716 MK48Z02 MK48Z12 MK48ZX2-12 MK48ZX2-15 MK48ZX2-20
Contextual Info: MK48Z02/12 B -12115/20/25 COMPONENTS 2K x 8 ZE R O P O W E R RAM M EM O R Y C O M P O N E N TS FEATURES □ Predicted worst case battery life of 11 years @ 70°C 1c □ 24 Vcc 2 □ □ 23 A, 3 □ □ 22 A, 4 C □ 21 W A3 s L □ 20 G *2 6 C A, □ Data retention in the absence of power