2719 DIODE Search Results

Contextual Info: 19-2719; Rev 0; 04/03 250ksps, +3V, 8-/4-Channel, 12-Bit ADCs with +2.5V Reference and Parallel Interface Power consumption is only 5.7mW VDD = VLOGIC at the maximum sampling rate of 250ksps. Two softwareselectable power-down modes enable the MAX1261/ MAX1263 to be shut down between conversions;

MAX1261

Abstract: MAX1261ACEI MAX1261AEEI MAX1261BCEI MAX1263 d7225
Contextual Info: 19-2719; Rev 0; 04/03 250ksps, +3V, 8-/4-Channel, 12-Bit ADCs with +2.5V Reference and Parallel Interface Excellent dynamic performance and low power, combined with ease of use and small package size, make these converters ideal for battery-powered and dataacquisition applications or for other circuits with demanding power consumption and space requirements.

D4457N

Abstract: D2228N D448N D5807N D758N d4457n m3.2
Contextual Info: Sperr - Diode + Gleichspannung Sperrspannung Bauelement VRRM 100 V 200 V 400 V 200 V 400 V 800 V + - Kühlblöcke für Wasserkühlung Temp. tA Gleichstrom Verlustl. P d Id Schaltung Wasser men. vL pro KB Diode D Thyristor T Kühlblock KB [ltr/min] Anzahl KB pro

D4457N

Abstract: 4336 326.4 D2228N D448N D5807N D758N 4807
Contextual Info: Sperr - Diode + Gleichspannung Sperrspannung Bauelement VRRM 100 V 200 V 400 V 200 V 400 V 800 V - Kühlblöcke für Wasserkühlung Temp. tA Gleichstrom Verlustl. P d Id Schaltung Wasser men. vL pro KB Diode D Thyristor T Kühlblock KB [ltr/min] Anzahl KB pro

Diode FAJ 32

Abstract: 2SK2719 SC-65 Diode FAJ 45
Contextual Info: T O S H IB A 2SK2719 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2719 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Sorce ON Resistance

1N4687 DO-7

Contextual Info: Zener Regulator Diodes Part N um ber M icrosem i Division Scottsdale Scottsdale JAN1N4620AUR-1 Scottsdale Scottsdale JAN TX1N 4620 Scottsdale JAN TX1N4620-1 JANTX1N4620AUR-1 Scottsdale Scottsdale JAN TX V1N 4620 Scottsdale JANTXV1N4620-1 JAN TXV1N 4620AU R -1 Scottsdale

D2228N

Abstract: D4457N D448N D5807N D5809N D758N
Contextual Info: Sperr - Diode + Gleichspannung Sperrspannung Bauelement VRRM 100 V 200 V 400 V 200 V 400 V 800 V + - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock KB [ltr/s]

D4457N

Abstract: D2228N D448N D5807N D5809N D758N KC30 613
Contextual Info: Sperr - Diode + Gleichspannung Sperrspannung Bauelement VRRM 100 V 200 V 400 V 200 V 400 V 800 V - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock KB [ltr/s]

C-2719

Contextual Info: Photosensor Amplifiers Amplify a low level photocurrent with low noise Photosensor amplifiers are current-to-voltage conversion amplifiers de­ signed to detect very low photocurrent from a photodiode. Dry battery op­ eration allows you to use these amplifiers anywhere. Thus, there is no

Contextual Info: 0 1E 3 8 7 5 0 8 1 G E S O L I D STATE Optoelectronic Specifications — HARRIS SEMICON» SECTOR 37E D B 4302571 19686 0057145 Photon Coupled Isolator H11A1, H11A2, H11A3, HT1A4, H11A5 T W J-S 3 ? *H A S Ga As Infrared Em itting Diode & NPN Silicon Photo-Transistor

3771

Abstract: 3942 9585 D2228N D448N D5809N D758N
Contextual Info: M6 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 60 Veff 125 Veff 250 Veff 45 V 200 V 80 V 400 V 170 V 800 V ~ ~ ~ ~ ~ + Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L

9585

Abstract: D2228N D448N D5809N D758N
Contextual Info: M6 - Schaltung ~ Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 60 Veff 125 Veff 250 Veff 45 V 200 V 80 V 400 V 170 V 800 V ~ ~ ~ ~ ~ + Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L

ACT4533C

Abstract: usb power
Contextual Info: ACT4533C+CHY100 5V/2.1A&9V/1.5A Car Charger Solution Application Report Car Charger Using ACT4533C+CHY100 FEATURES Wide input voltage range from 10V to 36V 125kHz switching frequency eases EMI design Stable with low-ESR ceramic capacitors 2% feedback voltage accuracy

HP 4200

Abstract: HP 4502 MTL 5541 cb 4220
Contextual Info: ATE 4200, 5200, 5800 Series Computer Assisted Program Generation A software package to provide fixtures and guarded test programs in the shortest possible time • In-Circuit test program generation software · Designed for use with Microsoft Windows A special .cb file editor called MkNet is built into CAPG. This can

D4457N

Abstract: 16-04 thyristor D2228N D448N D5807N D5809N D758N
Contextual Info: M6 - Schaltung Anschlußspannung Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 60 Veff 125 Veff 250 Veff 45 V 200 V 80 V 400 V 170 V 800 V ~ ~ ~ ~ ~ ~ + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L

SPEED CON 5200

Abstract: HP 4502 EN50081-1 EN50082-1
Contextual Info: ATE 5200 Power Manufacturing Defects Analyzer A range of Power Manufacturing Defects Analyzers offering the highest throughput capability to the electronics manufacturing industry. • Up to 1200 components/sec test speed • Maximum of 2112 pins • Microsoft WindowsTM operating system

46883

Abstract: 130dB 05 5115 50
Contextual Info: issue 4.qxd 07/Dec/2004 10:21 Page 1 Microwave 2186/87 5 & 20 GHz Programmable Attenuators Wide range GPIB programmable attenuator with outstanding accuracy for bench top, automatic and standards applications • Attenuation from 0 to 130 dB Calibration Data to International Standards

Contextual Info: AON6504 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL

Contextual Info: AON6506 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL

Contextual Info: AOD510/AOI510 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL

aon6504

Contextual Info: AON6504 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL

Contextual Info: AOD510/AOI510 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL

Contextual Info: AON6506 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL

Contextual Info: AON6504 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS 1MOS LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL