27271SL Search Results

PC24J4R5

Abstract: Johanson 27273 PC24K080 PC24J1R2 transistor 38W P4446 27261SL johanson 8762 27281SL pc21j4r5
Contextual Info: Giga-Trim Selection Guide Click on the Part Number for Line Drawing Johanson P/N Capacitance Range pF 17273 0.6 to 4.5 27261 27261SL 27263 0.3 to 1.2 27264 27265 27271 27271SL 27273 0.6 to 4.5 27274 27275 27281 27281SL 27283 0.4 to 2.5 27284 27285 27291

Contextual Info: 27270, 47270 Series Giga-Trim .6 to 4.5 pF . 14 0 K - .118 0 "7 ADJUSTING SLOT . 0 1 5W X . 0 7 8 • ADJUSTING SLOT . 0 1 5W X .0 7 8 27271SL *PC22J4R5 27271 *PC21 J4R5 27274 PC23J4R5 Capacitance Range .6 to 4.5 pF Working Voltage 500 VDC Temperature Coefficient

Johanson 27273

Abstract: PC24J4R5
Contextual Info: Giga-Trim Capacitor Selection Guide Johanson P/N Dielectric .6 to 4.5 >8 500 Alumina 500 Sapphire Sapphire Sapphire Sapphire Sapphire 17273 27261 27261SL 27263 27264 27265 27271 27271SL 27273 27274 27275 27281 27281SL 27283 27284 27285 27291 27291SL 27293

Contextual Info: Giga-Trim Capacitor Selection Guide 27261 27261SL 27263 27264 27265 27271 27271SL 27273 27274 27275 27281 27281SL 27283 27284 27285 .3 to 1.2 >5 PC21J1R2 PC22J1R2 PC24J1R2 PC23J1R2 500 0 ± 50 .1-1 >5000 21 0 ± 50 .2-2 >3000 22 0 ± 50 .2-2 >4000 23 0 ± 75

330 j73 Tantalum Capacitor

Abstract: j3076 100B100JCA500X 567 tone marking J6 transistors motorola marking pld-1.5 package 100B2R7CP500X z14 b marking 726 j68 marking us capacitor pf l1
Contextual Info: Freescale Semiconductor Technical Data MW4IC001MR4 Rev. 3, 1/2005 RF LDMOS Wideband Integrated Power Amplifiers MW4IC001NR4 MW4IC001MR4 The MW4IC001 wideband integrated circuit is designed for use as a distortion signature device in analog predistortion systems. It uses Freescale’s newest

Contextual Info: Document Number: MRF6S9045 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF6S9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

Contextual Info: MRF6S19100H Rev. 1, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19100HR3 MRF6S19100HSR3 Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: Freescale Semiconductor Technical Data MRF284 Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6S9160H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier

Contextual Info: RFG1M09180 RFG1M09180 700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features  Advanced GaN HEMT Technology  Typical Peak Modulated Power >240W  Advanced Heat Sink Technology  Single Circuit for 865MHz To

100B201JT500XT

Abstract: CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF282-2 Rev. 17, 10/2008 RF Power Field Effect Transistor MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

Contextual Info: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advanced GaN HEMT Technology Typical Peak Modulated Power >120W Advanced Heat-Sink Technology

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF284 Rev. 16, 5/2005 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

ferroxcube for ferrite beads

Abstract: MRF282
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 14, 5/2005 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and

MRFE6S9200H

Abstract: 465B A114 A115 AN1955 JESD22 MRFE6S9200HR3 MRFE6S9200HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFE6S9200H Rev. 0, 3/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of

EEEFK1H101P

Abstract: A114 A115 AN1955 C101 JESD22 MRF6P18190HR6
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6P18190H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for W - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data Rev. 8, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21125R3 MRF21125SR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S21100H Rev. 4, 12/2010 RF Power Field Effect Transistors MRF5S21100HR3 MRF5S21100HSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier

NIPPON CAPACITORS

Abstract: capacitor mttf 100B120JP 100B180JP
Contextual Info: Freescale Semiconductor Technical Data Rev. 2, 1/2005 RF Power Field Effect Transistors MRF5S9100NR1 MRF5S9100NBR1 MRF5S9100MR1 MRF5S9100MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with

k 1225 data

Abstract: mosfet k 1225 transistor tt 2170 100B104JCA50X RF chip 81 210 W 20 IMO TDMA TT 2170 MRF21125 MRF21125S
Contextual Info: MOTOROLA O rder this docum ent by M RF21125/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF21125 MRF21125S RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W -C D M A base station applications at frequencies from 2110

Contextual Info: Preliminary Data Sheet May 2004 AGR09030E 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09030E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular

MRF6S9045MR1

Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S9045 MRF6S9045MBR1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9045 Rev. 2, 5/2006 Replaced by MRF6S9045NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

KME63VB471M12x25LL

Abstract: transistors 5287 A114 A115 AN1955 C101 JESD22 MRF5S9150HR3 MRF5S9150HSR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF5S9150H Rev. 1, 5/2006 RF Power Field Effect Transistors MRF5S9150HR3 MRF5S9150HSR3 Designed for N - CDMA base station applications with frequencies from 869 to 960 MHz. Suitable for multicarrier amplifier applications.

A114

Abstract: AN1955 JESD22 MRF6S9160H MRF6S9160HR3 MRF6S9160HSR3 atc100b220j
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6S9160H Rev. 2, 8/2008 MRF6S9160HR3/HSR3 replaced by MRFE6S9160HR3/HSR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistors ARCHIVE INFORMATION Designed for N - CDMA, GSM and GSM EDGE base station applications