272829 Search Results

Contextual Info: FUJITSU SEMICONDUCTOR CONTROLLER MANUAL CM44-10103-5E 2 F MC-16LX 16-BIT MICROCONTROLLER MB90550A/B Series HARDWARE MANUAL 2 F MC-16LX 16-BIT MICROCONTROLLER MB90550A/B Series HARDWARE MANUAL Be sure to refer to the “Check Sheet” for the latest cautions on development.

WD2511A

Abstract: SR24S WD2511 DALI gateway RDD 17-33 48-PIN 68-PIN SR16 W2511A "LINK STATE"
Contextual Info: WD2511A X.25 Packet Network Interface LAPB FEATURES Handles The Entire Link Level Com m unication Protocol • International standard CCIT X.25 LAPB protocol for packet switching • Program m able link level tim er (T1) and retransm ission counter (N2)

Contextual Info: MSP430C32x, MSP430P325A MIXED SIGNAL MICROCONTROLLER SLAS219B − MARCH 1999 − REVISED MARCH 2000 D Low Supply Voltage Range, 2.5 V − 5.5 V D Low Operation Current, 400 mA at 1 MHz, D Integrated 12+2 Bit A/D Converter D Family Members Include: 3V D Ultra-Low Power Consumption Standby

2118B-02

Abstract: STV2118B sharp colour tv circuit diagram stv2118 STV2112A TDA8174 4.25mhz Vision Mid 28 NTSC Decoders STV8224
Contextual Info: STV2118B BUS CONTROLLED PAL/SECAM/NTSC TV PROCESSOR . . . . . I2C BUS CONTROL OF ALL FUNCTIONS INTEGRATED FILTERS TRAP, BANDPASS, CLOCHE INTEGRATED LUMINANCE DELAY LINE PAL/SECAM/NTSCCHROMA DEMODULATORS AUTOMATIC CUT-OFF CURRENT LOOP TWO RGB INPUTS

CPGA drawing

Abstract: AM29516 AM29517 CY7C516 CY7C517 HMU16 HMU17 LMU16
Contextual Info: HMU16, HMU17 Data Sheet November 1999 File Number 2803.4 16 x 16-Bit CMOS Parallel Multipliers Features The HMU16 and HMU17 are high speed, low power CMOS 16-bit x 16-bit multipliers ideal for fast, real time digital signal processing applications. • 16 x 16-Bit Parallel Multiplier with Full 32-Bit Product

K1B5616BBM

Abstract: K1B5616BA D254 D255 K1B5616BAM K1B5616BAM-I UtRAM Density
Contextual Info: Preliminary UtRAM K1B5616BA B M 256Mb (16M x 16 bit) UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN

02-Dl

Abstract: 72235 PGA 56C315 43536
Contextual Info: CMOS SyncFIFO 256 x 18, 512 x 18,1024 x 18, 2048 x 18 and 4096 x 18 FEATURES: • • • • • • • • • • • • • • • • • 256 x 18-bit organization array 72205LB 512 x 18-bit organization array (72215LB) 1024 x 18-bit organization array (72225LB)

PMS430E325

Contextual Info: MSP430P325 MIXED SIGNAL MICROCONTROLLER SLAS164A – FEBRUARY 1998 – REVISED MARCH 2000 D D D D D D D D D D Low Supply Voltage Range, 2.7 V – 5.5 V Low Operation Current, 3 mA at 1 MHz, 3V Ultralow Power Consumption Standby Mode Down to 0.1 mA Five Power-Saving Modes

BCR100

Contextual Info: 70 128Mb/64Mb Async/Page/Burst CellularRAM 1.5 Memory Figure 1: Features • Single device supports asynchronous, page, and burst operations • VCC, VCCQ voltages: 1.7V–1.95V VCC 1.7V–1.95V VCCQ • Random access time: 70ns • Burst mode READ and WRITE access:

BLM31P330S

Abstract: DSS310 223S audio delay 1080sf24 C25 02D smpte 299M GS1503 299M 5501 7 segment
Contextual Info: GS1503 HD EMBEDDED AUDIO CODEC DATA SHEET DESCRIPTION • complies with SMPTE 292M and SMPTE 299M The GS1503 is a highly integrated, single chip solution for embedding/extracting digital audio streams into and out of high definition digital video signals. The GS1503 supports

Contextual Info: IDT72605 IDT72615 C M O S S y n c B iF lF O 2 5 6 x 1 8 x 2 and 5 1 2 x 1 8 x 2 iitegzated Device Technology, lie . FEATURES: • Two independent FIFO m em ories for fully bidirectional data transfers • 256 x 18 x 2 organization IDT72605 • 512 x 18 x 2 organization (IDT72615)

Contextual Info: Preliminary UtRAM K1B1616B2B 16Mb 1M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN

Contextual Info: MSP430C32x, MSP430P325A MIXED SIGNAL MICROCONTROLLER SLAS219B − MARCH 1999 − REVISED MARCH 2000 D Integrated 12+2 Bit A/D Converter D Family Members Include: D Low Supply Voltage Range, 2.5 V − 5.5 V D Low Operation Current, 400 mA at 1 MHz, 3V D Ultra-Low Power Consumption Standby

PMS430E325

Abstract: MSP430 MSP430P325
Contextual Info: MSP430P325 MIXED SIGNAL MICROCONTROLLER SLAS164A – FEBRUARY 1998 – REVISED MARCH 2000 D D D D D D D D D D Low Supply Voltage Range, 2.7 V – 5.5 V Low Operation Current, 3 mA at 1 MHz, 3V Ultralow Power Consumption Standby Mode Down to 0.1 mA Five Power-Saving Modes

aexxxx

Contextual Info: fax id: 5219 :/ CYPRESS CY7C09349 CY7C09359 4K/8K x 18 Synchronous Dual-Port Static RAM • High-speed clock to data access 6.5/7.5/12 ns max. • Low operating power Features • True Dual-Ported m em ory cells which allow simu Itaneous access of the same memory location

Contextual Info: STANDARD MICROSYSTEMS CORPORATION, 90 Artoy Drive, Hauppauge, NY 11788 516 435-6000 Fax (516) 231-6004 SMC91C92 DIVISION Single-Chip Ethernet Controller with RAM FEATURES • • • • • • • • • • Single-Chip Ethernet Controller 4608 Bytes of On-Chip RAM

afr60

Contextual Info: SGS-THOMSON *7Æ, MtêlMilLIOT « STV2216 BUS CONTROLLED NTSC/PAL TV PROCESSOR AD VANC E DATA • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ l2C BUS CONTROL OF ALL FUNCTIONS INTEGRATED FILTERS TRAP, BANDPASS INTEGRATED LUMINANCE DELAY LINE NTSC CHROMA DEMODULATORS WITH

AM29BL162C

Contextual Info: Back ADVANCE INFORMATION Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 112 Kword, and seven 128 Kword sectors

Contextual Info: fax id: 5209 CY7C09349V CY7C09359V :/ C Y P R E S S 3.3V 4K/8K x 18 Synchronous Dual-Port Static RAM • High-speed clock to data access 7.5/12 ns max. • 3.3V Low operating power Features • True Dual-Ported m em ory cells which allow simulta­ neous access of the same memory location

Contextual Info: M I in P f lM 128K X 18, 64K X 32/36 3.3V I/O, PIPELINED, DCD SYN CBUR ST SRAM MT58LC128K18C5, MT58LC64K32C5, MT58LC64K36C5 SYNCBURST SRAM 3.3V Supply, Pipelined, Burst Counter and Double-Cycle Deselect SYNCBURST SRAM FEATURES • • • • • • • •

diode in58

Abstract: OMRON POWER RELAY MP2 DMT 98 ATEX G 001 honeywell dcs manual Yokogawa Transducer ABB inverter motor fault code pdt 908
Contextual Info: Interface Technology and Switching Devices 2013 / 2014 7 PCB connection technology and electronics housing • PCB terminal blocks and plug-in connectors • Electronics housing Connection technology for field devices • Plug-in connectors • Cables and connectors

S29AS016J

Abstract: S29AS016J70 Spansion Flash 2169 77047
Contextual Info: S29AS016J Known Good Die 16 Megabit 2 M x 8-Bit/1 M x 16-Bit CMOS 1.8 Volt-only, Boot Sector Flash Memory Supplement General Description The S29AS016J in Known Good Die (KGD) form is 16 Mbit, 1.8 volt-only Flash memory. Spansion defines KGD as standard product in die form, tested for functionality and speed. Spansion KGD products have the

IS66WVD2M16DALL

Abstract: CellularRAM 66WVD2M16DALL
Contextual Info: IS66WVD2M16DALL 32Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD2M16DALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst

IS66WVC2M16DALL

Abstract: CellularRAM 66WVC2M16DALL
Contextual Info: IS66WVC2M16DALL 32Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC2M16DALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several