27282930 Search Results

WD2511A

Abstract: SR24S WD2511 DALI gateway RDD 17-33 48-PIN 68-PIN SR16 W2511A "LINK STATE"
Contextual Info: WD2511A X.25 Packet Network Interface LAPB FEATURES Handles The Entire Link Level Com m unication Protocol • International standard CCIT X.25 LAPB protocol for packet switching • Program m able link level tim er (T1) and retransm ission counter (N2)

CPGA drawing

Abstract: AM29516 AM29517 CY7C516 CY7C517 HMU16 HMU17 LMU16
Contextual Info: HMU16, HMU17 Data Sheet November 1999 File Number 2803.4 16 x 16-Bit CMOS Parallel Multipliers Features The HMU16 and HMU17 are high speed, low power CMOS 16-bit x 16-bit multipliers ideal for fast, real time digital signal processing applications. • 16 x 16-Bit Parallel Multiplier with Full 32-Bit Product

K1B5616BBM

Abstract: K1B5616BA D254 D255 K1B5616BAM K1B5616BAM-I UtRAM Density
Contextual Info: Preliminary UtRAM K1B5616BA B M 256Mb (16M x 16 bit) UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN

02-Dl

Abstract: 72235 PGA 56C315 43536
Contextual Info: CMOS SyncFIFO 256 x 18, 512 x 18,1024 x 18, 2048 x 18 and 4096 x 18 FEATURES: • • • • • • • • • • • • • • • • • 256 x 18-bit organization array 72205LB 512 x 18-bit organization array (72215LB) 1024 x 18-bit organization array (72225LB)

BLM31P330S

Abstract: DSS310 223S audio delay 1080sf24 C25 02D smpte 299M GS1503 299M 5501 7 segment
Contextual Info: GS1503 HD EMBEDDED AUDIO CODEC DATA SHEET DESCRIPTION • complies with SMPTE 292M and SMPTE 299M The GS1503 is a highly integrated, single chip solution for embedding/extracting digital audio streams into and out of high definition digital video signals. The GS1503 supports

Contextual Info: IDT72605 IDT72615 C M O S S y n c B iF lF O 2 5 6 x 1 8 x 2 and 5 1 2 x 1 8 x 2 iitegzated Device Technology, lie . FEATURES: • Two independent FIFO m em ories for fully bidirectional data transfers • 256 x 18 x 2 organization IDT72605 • 512 x 18 x 2 organization (IDT72615)

Contextual Info: Preliminary UtRAM K1B1616B2B 16Mb 1M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN

Contextual Info: STANDARD MICROSYSTEMS CORPORATION, 90 Artoy Drive, Hauppauge, NY 11788 516 435-6000 Fax (516) 231-6004 SMC91C92 DIVISION Single-Chip Ethernet Controller with RAM FEATURES • • • • • • • • • • Single-Chip Ethernet Controller 4608 Bytes of On-Chip RAM

AM29BL162C

Contextual Info: Back ADVANCE INFORMATION Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 112 Kword, and seven 128 Kword sectors

Contextual Info: M I in P f lM 128K X 18, 64K X 32/36 3.3V I/O, PIPELINED, DCD SYN CBUR ST SRAM MT58LC128K18C5, MT58LC64K32C5, MT58LC64K36C5 SYNCBURST SRAM 3.3V Supply, Pipelined, Burst Counter and Double-Cycle Deselect SYNCBURST SRAM FEATURES • • • • • • • •

diode in58

Abstract: OMRON POWER RELAY MP2 DMT 98 ATEX G 001 honeywell dcs manual Yokogawa Transducer ABB inverter motor fault code pdt 908
Contextual Info: Interface Technology and Switching Devices 2013 / 2014 7 PCB connection technology and electronics housing • PCB terminal blocks and plug-in connectors • Electronics housing Connection technology for field devices • Plug-in connectors • Cables and connectors

IS66WVD2M16DALL

Abstract: CellularRAM 66WVD2M16DALL
Contextual Info: IS66WVD2M16DALL 32Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD2M16DALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst

IS66WVC2M16DALL

Abstract: CellularRAM 66WVC2M16DALL
Contextual Info: IS66WVC2M16DALL 32Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC2M16DALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several

Contextual Info: Preliminary UtRAM K1B3216BDE 32Mb 2M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN

Contextual Info: IS66WVC1M16ALL IS67WVC1M16ALL 16Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC1M16ALL and IS67WVC1M16ALL is an integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device

Contextual Info: PARALLEL SyncBiFlFO CLOCKED BIDIRECTIONAL FIFO 256 x 18-BIT AND 5 1 2 x 1 8-BIT PRELIMINARY IDT72605 IDT72615 Integrated Device Technology. Inc. FEATURES: • Two independent FIFO m emories for fully bidirectional data transfers • 256 x 18 organization (IDT 72605)

Contextual Info: P54/74PCT632/U/A/B, P54/74PCT633/U/A/B F^EUHOlMâlRY P54/74PCT634/U/A/B, P54/74PCT635/U/A/B ULTRA HIGH SPEED 32-BIT ERROR DETECTION AND CORRECTION UNITS -FEATURES • TH-State and Open-Collector Output Options

Contextual Info: 128K x 18, 64K x 32/36 3.3V I/O, PI PELI NED, DCD S Y N C B U R S T SRAM MICRON I TECHNOLOGY, INC. C V K I P D I I D C O Y I M O D U n O CD O i l MT58LC128K18C5, MT58LC64K32C5, MT58LC64K36C5 T I A I UI n IV I 3.3V Supply, Pipelined, Double-Cycle Deselect Burst Counter and

Contextual Info: @ LG Semicon. Co. LTD Description Features The GM71C S 16160B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71C(S)16160B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process tech n o lo gy. The

Contextual Info: PRELIMINARY Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee per sector ■ One 8 Kword, two 4 Kword, one 112 Kword, and

Am29BL802CB-120R

Contextual Info: PRELIMINARY Am29BL802C 8 Megabit 512 K x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 48 Kword, three 64 Kword, and two 128 Kword sectors

Contextual Info: ADVANCE INFORMATION Am29BL802C 8 Megabit 512 K x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 48 Kword, three 64 Kword, and two 128 Kword sectors

Contextual Info: ADVANCE INFORMATION Am29BL802C 8 Megabit 512 K x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 48 Kword, three 64 Kword, and two 128 Kword sectors

Contextual Info: IS66WVD204816ALL Advanced Information 32Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD204816ALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a