CPGA drawing
Abstract: AM29516 AM29517 CY7C516 CY7C517 HMU16 HMU17 LMU16
Text: HMU16, HMU17 Data Sheet November 1999 File Number 2803.4 16 x 16-Bit CMOS Parallel Multipliers Features The HMU16 and HMU17 are high speed, low power CMOS 16-bit x 16-bit multipliers ideal for fast, real time digital signal processing applications. • 16 x 16-Bit Parallel Multiplier with Full 32-Bit Product
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HMU16,
HMU17
16-Bit
HMU16
HMU17
32-Bit
17-bit
CPGA drawing
AM29516
AM29517
CY7C516
CY7C517
LMU16
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K1B5616BBM
Abstract: K1B5616BA D254 D255 K1B5616BAM K1B5616BAM-I UtRAM Density
Text: Preliminary UtRAM K1B5616BA B M 256Mb (16M x 16 bit) UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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K1B5616BA
256Mb
K1B5616BBM
D254
D255
K1B5616BAM
K1B5616BAM-I
UtRAM Density
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BLM31P330S
Abstract: DSS310 223S audio delay 1080sf24 C25 02D smpte 299M GS1503 299M 5501 7 segment
Text: GS1503 HD EMBEDDED AUDIO CODEC DATA SHEET DESCRIPTION • complies with SMPTE 292M and SMPTE 299M The GS1503 is a highly integrated, single chip solution for embedding/extracting digital audio streams into and out of high definition digital video signals. The GS1503 supports
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GS1503
GS1503
24-bit
48kHz
GS1503.
BLM31P330S
DSS310
223S
audio delay
1080sf24
C25 02D
smpte 299M
299M
5501 7 segment
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Untitled
Abstract: No abstract text available
Text: Preliminary UtRAM K1B1616B2B 16Mb 1M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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K1B1616B2B
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AM29BL162C
Abstract: No abstract text available
Text: Back ADVANCE INFORMATION Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 112 Kword, and seven 128 Kword sectors
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Am29BL162C
16-Bit)
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diode in58
Abstract: OMRON POWER RELAY MP2 DMT 98 ATEX G 001 honeywell dcs manual Yokogawa Transducer ABB inverter motor fault code pdt 908
Text: Interface Technology and Switching Devices 2013 / 2014 7 PCB connection technology and electronics housing • PCB terminal blocks and plug-in connectors • Electronics housing Connection technology for field devices • Plug-in connectors • Cables and connectors
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unitB-FLK50/0
VIP-CAB-FLK50/0
VIP-CAB-FLK50/FR/OE/0
diode in58
OMRON POWER RELAY MP2
DMT 98 ATEX G 001
honeywell dcs manual
Yokogawa Transducer
ABB inverter motor fault code
pdt 908
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IS66WVD2M16DALL
Abstract: CellularRAM 66WVD2M16DALL
Text: IS66WVD2M16DALL 32Mb Async and Burst CellularRAM 2.0 Overview The IS66WVD2M16DALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device uses a multiplexed address and data bus scheme to minimize pins and includes a industry standard burst
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IS66WVD2M16DALL
IS66WVD2M16DALL
32Mbit
-40oC
2Mx16
IS66WVD2M16DALL-7013BLI
IS66WVD2M16DALL-7010BLI
IS66WVD2M16DALL-7008BLI
54-ball
CellularRAM
66WVD2M16DALL
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IS66WVC2M16DALL
Abstract: CellularRAM 66WVC2M16DALL
Text: IS66WVC2M16DALL 32Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC2M16DALL is an integrated memory device containing 32Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 2M words by 16 bits. The device includes several
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IS66WVC2M16DALL
IS66WVC2M16DALL
32Mbit
-40oC
2Mx16
IS66WVC2M16DALL-7013BLI
IS66WVC2M16DALL-7010BLI
IS66WVC2M16DALL-7008BLI
54-ball
CellularRAM
66WVC2M16DALL
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Untitled
Abstract: No abstract text available
Text: Preliminary UtRAM K1B3216BDE 32Mb 2M x 16 bit UtRAM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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K1B3216BDE
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Untitled
Abstract: No abstract text available
Text: IS66WVC1M16ALL IS67WVC1M16ALL 16Mb Async/Page/Burst CellularRAM 1.5 Overview The IS66WVC1M16ALL and IS67WVC1M16ALL is an integrated memory device containing 16Mbit Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 1M words by 16 bits. The device
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IS66WVC1M16ALL
IS67WVC1M16ALL
IS66WVC1M16ALL
IS67WVC1M16ALL
16Mbit
-40oC
1Mx16
IS66WVC1M16ALL-7013BLI
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee per sector ■ One 8 Kword, two 4 Kword, one 112 Kword, and
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Am29BL162C
16-Bit)
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Am29BL802CB-120R
Abstract: No abstract text available
Text: PRELIMINARY Am29BL802C 8 Megabit 512 K x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 48 Kword, three 64 Kword, and two 128 Kword sectors
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Am29BL802C
16-Bit)
Am29BL802CB-120R
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29BL802C 8 Megabit 512 K x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 48 Kword, three 64 Kword, and two 128 Kword sectors
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Am29BL802C
16-Bit)
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION Am29BL802C 8 Megabit 512 K x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 48 Kword, three 64 Kword, and two 128 Kword sectors
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Am29BL802C
16-Bit)
16-038-SSO56-2
ES107
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WD2511A
Abstract: SR24S WD2511 DALI gateway RDD 17-33 48-PIN 68-PIN SR16 W2511A "LINK STATE"
Text: WD2511A X.25 Packet Network Interface LAPB FEATURES Handles The Entire Link Level Com m unication Protocol • International standard CCIT X.25 LAPB protocol for packet switching • Program m able link level tim er (T1) and retransm ission counter (N2)
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WD2511A
1-800-NET
W1336C
SR24S
WD2511
DALI gateway
RDD 17-33
48-PIN
68-PIN
SR16
W2511A
"LINK STATE"
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02-Dl
Abstract: 72235 PGA 56C315 43536
Text: CMOS SyncFIFO 256 x 18, 512 x 18,1024 x 18, 2048 x 18 and 4096 x 18 FEATURES: • • • • • • • • • • • • • • • • • 256 x 18-bit organization array 72205LB 512 x 18-bit organization array (72215LB) 1024 x 18-bit organization array (72225LB)
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72205L
72215L
72225L
72235L
72245L
18-bit
72205LB)
72215LB)
02-Dl
72235 PGA
56C315
43536
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Untitled
Abstract: No abstract text available
Text: IDT72605 IDT72615 C M O S S y n c B iF lF O 2 5 6 x 1 8 x 2 and 5 1 2 x 1 8 x 2 iitegzated Device Technology, lie . FEATURES: • Two independent FIFO m em ories for fully bidirectional data transfers • 256 x 18 x 2 organization IDT72605 • 512 x 18 x 2 organization (IDT72615)
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IDT72605
IDT72615
IDT72605)
IDT72615)
J68-1)
PN64-1)
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Untitled
Abstract: No abstract text available
Text: STANDARD MICROSYSTEMS CORPORATION, 90 Artoy Drive, Hauppauge, NY 11788 516 435-6000 Fax (516) 231-6004 SMC91C92 DIVISION Single-Chip Ethernet Controller with RAM FEATURES • • • • • • • • • • Single-Chip Ethernet Controller 4608 Bytes of On-Chip RAM
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SMC91C92
10BASE-T
16-Bit
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Untitled
Abstract: No abstract text available
Text: M I in P f lM 128K X 18, 64K X 32/36 3.3V I/O, PIPELINED, DCD SYN CBUR ST SRAM MT58LC128K18C5, MT58LC64K32C5, MT58LC64K36C5 SYNCBURST SRAM 3.3V Supply, Pipelined, Burst Counter and Double-Cycle Deselect SYNCBURST SRAM FEATURES • • • • • • • •
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MT58LC128K18C5,
MT58LC64K32C5,
MT58LC64K36C5
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ELAP CM 72
Abstract: ELAP cm 76 fm transmitter 2KM documentation DDU-66F-XXX ELAP CM 140 hp laptop battery pack pinout semi catalog EB 203 D maxim evaluation kit touch dimmer TC 306 S
Text: Data B ook C o n t e n t s •S h o r t • F irst • S a l e s -Fo -Pa O rm g e C atalog Data S h e e t s ffic es CD •C ROM C o n ten ts: o m p l e t e Data S an d A pplication fo r A l l • U s e r 's G P h e e t s n o t e s r o d u c ts uides p. -••x;. < ~x3xxr r -> ~' ' fP 5 > g? 3
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Untitled
Abstract: No abstract text available
Text: PARALLEL SyncBiFlFO CLOCKED BIDIRECTIONAL FIFO 256 x 18-BIT AND 5 1 2 x 1 8-BIT PRELIMINARY IDT72605 IDT72615 Integrated Device Technology. Inc. FEATURES: • Two independent FIFO m emories for fully bidirectional data transfers • 256 x 18 organization (IDT 72605)
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18-BIT
IDT72605
IDT72615
IDT72605/IDT72615
MIL-STD-883,
68-PIN
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Untitled
Abstract: No abstract text available
Text: P54/74PCT632/U/A/B, P54/74PCT633/U/A/B F^EUHOlMâlRY P54/74PCT634/U/A/B, P54/74PCT635/U/A/B ULTRA HIGH SPEED 32-BIT ERROR DETECTION AND CORRECTION UNITS -FEATURES • TH-State and Open-Collector Output Options
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P54/74PCT632/U/A/B,
P54/74PCT633/U/A/B
P54/74PCT634/U/A/B,
P54/74PCT635/U/A/B
32-BIT
PCT632,
PCT634
PCT633,
PCT635
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Untitled
Abstract: No abstract text available
Text: 128K x 18, 64K x 32/36 3.3V I/O, PI PELI NED, DCD S Y N C B U R S T SRAM MICRON I TECHNOLOGY, INC. C V K I P D I I D C O Y I M O D U n O CD O i l MT58LC128K18C5, MT58LC64K32C5, MT58LC64K36C5 T I A I UI n IV I 3.3V Supply, Pipelined, Double-Cycle Deselect Burst Counter and
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MT58LC128K18C5,
MT58LC64K32C5,
MT58LC64K36C5
100-PIN
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Features The GM71C S 16160B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71C(S)16160B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process tech n o lo gy. The
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GM71C
16160B/BL
42SOJ
GGQ4C544
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