27A DIODE Search Results

12N60B3D

Abstract: HGT1S12N60B3D HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TA49188 TB334
Contextual Info: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS Semiconductor 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Features Description • 27A, 600V, TC = 25oC This family of MOS gated high voltage switching devices

G12N60B3

Abstract: HGT1S12N60B3 HGT1S12N60B3S HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D TB334 G12N60B G12N60
Contextual Info: HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S Semiconductor 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, TC = 25oC The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the

APT10035LLL

Abstract: APT2X30D120J APT2X31D120J H100
Contextual Info: 2 3 2 2 3 3 1 1 4 1 SO 4 Anti-Parallel Parallel APT2X30D120J APT2X31D120J 27 2 T- 4 APT2X31D120J APT2X30D120J 1200V 1200V 27A 27A DUAL DIE ISOTOP PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode

Rad Hard in Fairchild for MOSFET

Contextual Info: FSJ9260D, FSJ9260R 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 27A, -200V, rDS ON = 0.130Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Contextual Info: S FSYA250D, FSYA250R Semiconductor y 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description . 27A, 200V, rDS 0 N = 0.100£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

SM81A

Contextual Info: FSJ9260D, FSJ9260R 33 HARRIS SEMICONDUCTOR 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 27A, -200V, rDS ON = 0.13012 The Discrete Products Operation ot Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

12N60B3

Abstract: 12n60b3d
Contextual Info: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Features Description • 27A, 600V, TC = 25oC This family of MOS gated high voltage switching devices

1E14

Abstract: 2E12 FRK250D FRK250H FRK250R 32261
Contextual Info: FRK250D, FRK250R, FRK250H 27A, 200V, 0.100 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 27A, 200V, RDS on = 0.100Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

Contextual Info: FSJ9260D, FSJ9260R 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description . 27A, -200V, rDS 0 N = 0.130£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3
Contextual Info: FSYA250D, FSYA250R 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

FRK250H

Abstract: 1E14 2E12 FRK250D FRK250R Rad Hard in Fairchild for MOSFET PHOTO TRANSISTOR
Contextual Info: FRK250D, FRK250R, FRK250H 27A, 200V, 0.100 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 27A, 200V, RDS on = 0.100Ω TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

FDB390N15A

Abstract: jc31 27a diode MOSFET 150V
Contextual Info: FDB390N15A N-Channel PowerTrench MOSFET 150V, 27A, 39mW Features Description • RDS on = 33.5mW ( Typ.)@ V GS = 10V, ID = 27A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

Contextual Info: y*Rg*s FRK250D, FRK250R, FRK250H 27A, 200V, 0.100 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 27A, 200V, RDS on = 0.100S1 TO-204AE • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

Contextual Info: FDB390N15A N-Channel PowerTrench MOSFET 150V, 27A, 39mΩ Features Description • RDS on = 33.5mΩ ( Typ.)@ VGS = 10V, ID = 27A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3
Contextual Info: FSYA250D, FSYA250R 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

1E14

Abstract: 2E12 FSYA250D FSYA250D1 FSYA250D3 FSYA250R FSYA250R1 FSYA250R3
Contextual Info: FSYA250D, FSYA250R 27A, 200V, 0.100 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 27A, 200V, rDS ON = 0.100Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

irfp140

Abstract: IRFp1401 160UH IRFP141 IRFP142 IRFP143
Contextual Info: IRFP140, IRFP141, IRFP142, IRFP143 S E M I C O N D U C T O R 27A and 31A, 80V and 100V, 0.077 and 0.099 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 31A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

DIODE 3LU

Abstract: DIODE 3LU 32 DIODE 3LU 35 3lu diode
Contextual Info: HARFR IS HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, T c = 25°C The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the

G12N60B3

Abstract: TO-262AA Package equivalent
Contextual Info: HARRIS HGTP12N60B3, HGT1S12N60B3, HGT1S12N60B3S S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description • 27A, 600V, T c = 2 5 °C The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the

1E14

Abstract: 2E12 FSJ9260D FSJ9260D1 FSJ9260D3 FSJ9260R FSJ9260R1 Rad Hard in Fairchild for MOSFET
Contextual Info: FSJ9260D, FSJ9260R 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 27A, -200V, rDS ON = 0.130Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

irfp140

Abstract: IRFP141 IRFP142 IRFP143
Contextual Info: i h a ” r r IRFP140, IRFP141, IRFP142, IRFP143 i s " I O O N ° “ C T ° " 27A and 31 A, 80V and 100V, 0.077 and 0.099 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 31 A, 80V and 100V These are N-Channel enhancement mode silicon gate

MIL-S-19500

Abstract: 1E14 2E12 FSJ9260D FSJ9260D1 FSJ9260D3 FSJ9260R FSJ9260R1
Contextual Info: FSJ9260D, FSJ9260R 27A, -200V, 0.130 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 27A, -200V, rDS ON = 0.130Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

IRFP250

Contextual Info: H a IRFP250, IRFP251, IRFP252, IRFP253 r r i s ” “ I CONDUCTOE 27A and 33A, 150V and 200V, 0.085 and 0.12 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 33A, 150 V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Irfp250

Abstract: irfp250 mosfet irfp252
Contextual Info: IRFP250, IRFP251, IRFP252, IRFP253 S E M I C O N D U C T O R 27A and 33A, 150V and 200V, 0.085 and 0.12 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 33A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power