27C01 Search Results

27C010L

Abstract: 27C010L-12 ws27c010l-15dmb 27C010 WS27C010L WS27C010L-12CMB 27C010L-20 27010 eprom eprom 27010 27C010 wsi
Contextual Info: 27C010L Military 128K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS • DESC SMD No. 5962-89614 • Compatible with JEDEC 27010 and — 90 ns Access Time 27C010 EPROMs • Fast Programming • EPI Processing • JEDEC Standard Pin Configuration — Latch-Up Immunity to 200 mA

2a92

Abstract: 27C010A 6E9621 6B9637 3A9315 3E0317 5A9516 5C9550 1B9126 2D1150-9
Contextual Info: PAGE 1 OF 20 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-27C010 CMOS EPROM RELIABILITY DATA -125°C OPERATING LIFE TEST -200°C RETENTION BAKE -PROGRAM AND ERASE -HIGH TEMPERATURE REVERSE BIAS (HTRB) -125°C OPERATING LIFE TEST (PLASTIC) -150°C RETENTION BAKE (PLASTIC)

Contextual Info: Ju ly 1998 M IC O N D U C T D R tm 27C010L 1,048,576-Bit 128Kx8 Low Power Fast EPROM General Description • Programming Voltage +12.75V ■ Typical programm ing tim e 50|is The FM 27C010 is a lo w -po w e r 1 Mbit, 5V-only one-tim e-program m able (OTP) read-only m em ory (EPROM), organized into 128K

Contextual Info: 27C010L Military 128Kx 8 CMOS EPROM KEY FEATURES • High Performance CMOS • DESC SMD No. 5962-89614 — 120 ns A ccess T im e • Fast Programming • Compatible with JEDEC 27010 and 27C010 EPROMs • EPI Processing • JEDEC Standard Pin Configuration

27c010-55

Abstract: Fairchild F8
Contextual Info: S E M IC O N D U C T O R J anuary 1998 tm 27C010 1,048,576-Bit 128K x 8 High Speed CMOS EPROM General Description The FM 27C010 is a High Perform ance 128K x 8 UV Eras­ able EPROM. It is m anufactured using an advanced C M OS process technology enabling it to operate at speeds as fast

5A9516

Abstract: 5H9606 5H9605 7H9744 2A9212 5A9524 7H9747 9d9018 5c112 1B9126
Contextual Info: PAGE 1 OF 20 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-27C010 CMOS EPROM RELIABILITY DATA -125°C OPERATING LIFE TEST -200°C RETENTION BAKE -PROGRAM AND ERASE -HIGH TEMPERATURE REVERSE BIAS (HTRB) -125°C OPERATING LIFE TEST (PLASTIC) -150°C RETENTION BAKE (PLASTIC)

Contextual Info: 27C010T 1 Megabit 128K x 8-Bit OTP EPROM VPP 1 32 A5 VCC A9 A16 PGM A15 NC A12 A12 A14 A16 A7 A13 I/O0 A6 A8 I/O7 A5 A9 27C010T A4 A3 1024 x 1024 Memory Matrix X-Decoder Input Data Control Y-Gating Y-Decoder A11 OE A2 A10 A1 CE A0 I/O7 I/O0 I/O6 CE OE A0-A4

no-go

Contextual Info: SPACE ELECTRONICS INC. 1 MB 128K X 8 BIT - OTP EPROM SPACE PRODUCTS 27C010TRP A5 VPP 1 32 VCC A9 A16 PGM A15 NC A12 A12 A14 A16 A7 A13 A6 A8 A5 A9 A4 A11 X-Decoder I/O0 Input Data Control I/O7 A3 OE A2 A10 A1 CE A0 I/O7 I/O0 I/O6 I/O1 I/O5 OE I/O2 I/O4 PGM

eprom 27c256 28 PIN DIP 120 NS

Abstract: 27C020 27C040 27C080 27C256 27C512 NM27C010
Contextual Info: 27C010 1,048,576-Bit 128K x 8 High Performance CMOS EPROM The NM 27C010 is m anufactured using Fairchild’s advanced CM OS AM G EPROM technology. General Description The NM 27C010 is a high performance, 1,048,576-bit Electrically Program mable UV Erasable Read O nly Memory. It is organized

Contextual Info: 27C010L Military 128Kx 8 CMOS EPROM KEY FEATURES • DESCSMD No. 5962-89614 • High Performance CMOS — 90 ns A ccess Tim e • Fast Programming • Compatible with JEDEC 27010 and 27C010 EPROMs • EPI Processing • JEDEC Standard Pin Configuration — Latch-U p Im m unity to 200 mA

smd JF

Abstract: cllcc 542w
Contextual Info: 27C010L Military 128Kx 8 CMOS EPROM KEY FEATURES • DESC SMD No. 5962-89614 • High Performance CMOS — 90 ns Access Time • Fast Programming • Compatible with JEDEC 27010 and 27C010 EPROMs • EPI Processing • JEDEC Standard Pin Configuration — Latch-Up Immunity to 200 mA

i27c010

Abstract: intel 5113 eprom
Contextual Info: in te i 27C010 1M 128K x 8 CHMOS EPROM JEDEC Approved EPROM Pinouts -3 2 -P in DIP, 32-Pin PLCC — Simple Upgrade from Lower Densities Fast Programming — Qulck-Pulse ProgrammingTM Algorithm — Programming Time as Fast as 15 Seconds Complete Upgrade Capability to Higher

29023

Abstract: 290232
Contextual Info: A P M ! O K l[F ® K M Ä fO ® K l 27C011 PAGE-ADDRESSED1M (8 x 16K x 8 EPROM • Paged Organization — Reduced Physical Address Requirement ■ Automatic Page Clear — Resets to Page 0 on Power-Up and On Demand with RST Signal ■ Compatible with 28-Pin JEDEC EPROMs

intel 27C010

Abstract: 27C010-120V10 27C010-200V10 27C010 27C010-150V10 LD27C010 P27C010-150V10 27C0T0
Contextual Info: intei 27C010 1M 128K x 8 CHMOS EPROM • JEDEC Approved EPROM Pinouts — 32-Pin DIP, 32-Pln PLCC — Simple Upgrade from Lower Densities ■ Complete Upgradfe Capability to Higher Densities ■ Fast Programming — Qufck-Pulse Programming Algorithm — Programming Time as Fast as 15

intel 27C011

Abstract: 27C126 intel 27C010 27C128 INTEL 27C128 st make eprom 27c64 PROGRAMMER CIRCUIT 27C011 intel EPROM 27128 27C010 29023
Contextual Info: intel, 27C011 PAGE-ADDRESSED 1M 8 x 16K x 8 EPROM • Paged Organization — Reduced Physical Address Requirement ■ Compatible with 28-Pin JEDEC EPROMs — Single-Trace Modification for Retrofitting 27128-Based Designs ■ No-Hardware-Change Upgrades — Drop-In 27513 Replacement

Contextual Info: SPACE ELECTRONICS INC. 1 MB 128K X 8 BIT - OTP EPROM SPACE PRODUCTS 27C010TRP A5 VPP 1 32 VCC A9 A16 PGM A15 NC A12 A12 A14 A16 A7 A13 A6 A8 A5 A9 A4 A11 X-Decoder I/O0 Input Data Control I/O7 A3 OE A2 A10 A1 CE A0 I/O7 I/O0 I/O6 I/O1 I/O5 OE I/O2 I/O4 PGM

27C32

Abstract: 24c04 Atmel 27c301 atmel 24c02 39SF040 24C08 ATMEL dataman s4 27C101 Xicor 28256 eeprom 2864a
Contextual Info: Dataman S4 Programmer Device Support List Library Version 2.84 May 2001 8 Bit EPROMS, EEPROMS & Flash ROMS AMD 27010 2716B 2732B 27C010 27C100 27C512L 27HB010 28C256 28F256 29F002NBB 29F040 9716 9864-25 27128 27256 27512 27C020 27C128 27C64 2817A 28F010 28F512

27C010L

Abstract: WS27C010L 27C010 wsi WS27C010L-15DMB
Contextual Info: 27C010L Military 128Kx 8 CMOS EPROM KEY FEATURES • DESC SMD No. 5962-89614 • High Performance CMOS — 120 ns Access Time • Fast Programming • Compatible with JEDEC 27010 and 27C010 EPROMs • EPI Processing • JEDEC Standard Pin Configuration — 32 Pin CERDIP Package

27C011

Abstract: 27C128 INTEL 27C010 27C128 27C210 27C513 27C64 27128B 7258 "drop-in replacement"
Contextual Info: 27C011 PAGE-ADDRESSED1M 8 x 16K x 8 EPROM • Paged Organization — Reduced Physical Address Requirement ■ Compatible with 28-Pin JEDEC EPROMs -Single-Trace Modification for Retrofitting 27128-Based Designs ■ No-Hardware-Change Upgrades — Drop-In 27513 Replacement

27C010T

Contextual Info: 27C010T 1 Megabit 128K x 8-Bit OTP EPROM A5 VPP 1 32 VCC A9 A16 PGM A15 NC A12 A12 A14 A16 A7 A13 I/O0 A6 A8 I/O7 A5 A9 27C010T A4 A3 1024 x 1024 Memory Matrix X-Decoder Input Data Control Y-Gating Y-Decoder A11 OE A2 A10 A1 CE A0 I/O7 I/O0 I/O6 CE OE A0-A4

Contextual Info: 27C010T 1 Megabit 128K x 8-Bit OTP EPROM A5 VPP 1 32 VCC A9 A16 PGM A15 NC A12 A12 A14 A16 A7 A13 I/O0 A6 A8 I/O7 A5 A9 27C010T A4 A3 1024 x 1024 Memory Matrix X-Decoder Input Data Control Y-Gating Y-Decoder A11 OE A2 A10 A1 CE A0 I/O7 I/O0 I/O6 CE OE A0-A4

Contextual Info: 27C010L Military 128K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS • DESC SMD No. 5962-89614 • Compatible with JEDEC 27010 and — 90 ns Access Time 27C010 EPROMs • Fast Programming • EPI Processing • JEDEC Standard Pin Configuration — Latch-Up Immunity to 200 mA

27C010L

Abstract: 27010 eprom 27C010L-15 27C010L-20
Contextual Info: 27C010L Military 128Kx 8 CMOS EPROM KEY FEATURES • DESC SMD No. 5962-89614 • High Performance CMOS — 90 ns Access Time • Fast Programming • Compatible with JEDEC 27010 and 27C010 EPROMs • EPI Processing • JEDEC Standard Pin Configuration — Latch-Up Immunity to 200 mA

27C126

Abstract: intel 27C011 27C011
Contextual Info: intel, 27C011 PAGE-ADDRESSED 1M 8 x 16K x 8 EPROM • Paged Organization — Reduced Physical Address Requirement ■ Compatible with 28-Pin JEDEC EPROMs — Single-Trace Modification for Retrofitting 27128-Based Designs ■ No-Hardware-Change Upgrades — Drop-In 27513 Replacement