27C010 UV Search Results

FZL 141

Abstract: FZL 141 S EPROM 27c010 fzl 131 27010 eprom 27C010
Contextual Info: Philips Com ponents-Signetics D ocum ent No. ECN No. 27C010 1 MEG CMOS EPROM 128K x 8 Date o f Issue November 1990 S tatus Preliminary Specification Memory Products PIN CONFIGURATIONS DESCRIPTION FEATURES Philips Components-Signetics 27C010 CMOS EPROM is a 1,048,576-bit 5V

EPROM 27c010

Abstract: M27C010 27C010Q
Contextual Info: NM27C010 1,048,576-Bit 128K x 8 High Performance CMOS EPROM The NM 27C010 is m anufactured using Fairchild’s advanced CM OS AM G EPROM technology. General Description The NM 27C010 is a high performance, 1,048,576-bit Electrically Program mable UV Erasable Read O nly Memory. It is organized

eprom 27c256 28 PIN DIP 120 NS

Abstract: 27C020 27C040 27C080 27C256 27C512 NM27C010
Contextual Info: NM27C010 1,048,576-Bit 128K x 8 High Performance CMOS EPROM The NM 27C010 is m anufactured using Fairchild’s advanced CM OS AM G EPROM technology. General Description The NM 27C010 is a high performance, 1,048,576-bit Electrically Program mable UV Erasable Read O nly Memory. It is organized

27C010L

Abstract: WS27C010L 27C010 wsi WS27C010L-15DMB
Contextual Info: WS27C010L Military 128Kx 8 CMOS EPROM KEY FEATURES • DESC SMD No. 5962-89614 • High Performance CMOS — 120 ns Access Time • Fast Programming • Compatible with JEDEC 27010 and 27C010 EPROMs • EPI Processing • JEDEC Standard Pin Configuration — 32 Pin CERDIP Package

27C010L

Abstract: 27010 eprom 27C010L-15 27C010L-20
Contextual Info: WS27C010L Military 128Kx 8 CMOS EPROM KEY FEATURES • DESC SMD No. 5962-89614 • High Performance CMOS — 90 ns Access Time • Fast Programming • Compatible with JEDEC 27010 and 27C010 EPROMs • EPI Processing • JEDEC Standard Pin Configuration — Latch-Up Immunity to 200 mA

Contextual Info: WS27C010L Military 128Kx 8 CMOS EPROM KEY FEATURES • High Performance CMOS • DESC SMD No. 5962-89614 — 120 ns A ccess T im e • Fast Programming • Compatible with JEDEC 27010 and 27C010 EPROMs • EPI Processing • JEDEC Standard Pin Configuration

intel 27C010

Abstract: P27C010-200V10 27C010 27C010 uv 27C010-200V10 A12C LD27C010 p27c010-150v10 N27C010-200V10
Contextual Info: in tei 27C010 1M 128K x 8 CHMOS EPROM • JEDEC Approved EPROM Pinouts — 32-Pin DIP, 32-Pln PLCC — Simple Upgrade from Lower Densities ■ Complete Upgradfe Capability to Higher Densities ■ Versatile EPROM Features — CMOS and TTL Compatibility — Two Line Control

Contextual Info: WS27C010L Military 128K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS • DESC SMD No. 5962-89614 • Compatible with JEDEC 27010 and — 90 ns Access Time 27C010 EPROMs • Fast Programming • EPI Processing • JEDEC Standard Pin Configuration — Latch-Up Immunity to 200 mA

27C010L

Abstract: 27C010L-12 ws27c010l-15dmb 27C010 WS27C010L WS27C010L-12CMB 27C010L-20 27010 eprom eprom 27010 27C010 wsi
Contextual Info: WS27C010L Military 128K x 8 CMOS EPROM KEY FEATURES • High Performance CMOS • DESC SMD No. 5962-89614 • Compatible with JEDEC 27010 and — 90 ns Access Time 27C010 EPROMs • Fast Programming • EPI Processing • JEDEC Standard Pin Configuration — Latch-Up Immunity to 200 mA

smd JF

Abstract: cllcc 542w
Contextual Info: WS27C010L Military 128Kx 8 CMOS EPROM KEY FEATURES • DESC SMD No. 5962-89614 • High Performance CMOS — 90 ns Access Time • Fast Programming • Compatible with JEDEC 27010 and 27C010 EPROMs • EPI Processing • JEDEC Standard Pin Configuration — Latch-Up Immunity to 200 mA

i27c010

Abstract: intel 5113 eprom
Contextual Info: in te i 27C010 1M 128K x 8 CHMOS EPROM JEDEC Approved EPROM Pinouts -3 2 -P in DIP, 32-Pin PLCC — Simple Upgrade from Lower Densities Fast Programming — Qulck-Pulse ProgrammingTM Algorithm — Programming Time as Fast as 15 Seconds Complete Upgrade Capability to Higher

intel 27C010

Abstract: 27C010-120V10 27C010-200V10 27C010 27C010-150V10 LD27C010 P27C010-150V10 27C0T0
Contextual Info: intei 27C010 1M 128K x 8 CHMOS EPROM • JEDEC Approved EPROM Pinouts — 32-Pin DIP, 32-Pln PLCC — Simple Upgrade from Lower Densities ■ Complete Upgradfe Capability to Higher Densities ■ Fast Programming — Qufck-Pulse Programming Algorithm — Programming Time as Fast as 15

27c010-55

Abstract: 27C512 128K 27C040 FM27C010 NM27C010 27C256 DIP Fairchild F8
Contextual Info: S E M IC O N D U C T O R J anuary 1998 tm FM27C010 1,048,576-Bit 128K x 8 High Speed CMOS EPROM General Description The FM 27C010 is a High Perform ance 128K x 8 UV Eras­ able EPROM. It is m anufactured using an advanced C M OS process technology enabling it to operate at speeds as fast

27c010-55

Abstract: Fairchild F8
Contextual Info: S E M IC O N D U C T O R J anuary 1998 tm FM27C010 1,048,576-Bit 128K x 8 High Speed CMOS EPROM General Description The FM 27C010 is a High Perform ance 128K x 8 UV Eras­ able EPROM. It is m anufactured using an advanced C M OS process technology enabling it to operate at speeds as fast

M27C010

Abstract: AM27G Am27G010 AMD am2 socket pinout AMD socket AM2 pinout AMD am2 socket pinout VOLTAGE 27C010X socket AM2 pinout
Contextual Info: a Advanced Micro Devices Am27C010 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Fast access time — 55 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing

27C010A

Contextual Info: CYPRESS CY27C010 ADVANCED INFORMATION 128K x 8 CMOS EPROM Features Functional Description • CMOS for optimum speed/power • High speed — tAA - 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization

QS5000

Contextual Info: R C H PRELIMINARY I I - P January 1998 S E M I C O N D U C T O R -n FM27C010 1,048,576-Bit 128K x 8 High Speed CMOS EPROM General Description The FM 27C 010 is a High Perform ance 128K x 8 UV Eras­ able EPROM . II is m anufactured using an advanced C M O S

EPROM 27c010

Abstract: 27C010 equivalent CY27C010-150WC CY27C010
Contextual Info: CY27C010 ADVANCED INFORMATION 128K x 8 CMOS EPROM Features Functional Description • CMOS for optimum speed/power • High speed — U a = 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable In the

27C020

Abstract: 27C040 27C080 27C256 27C512 NM27C010 NM27C010Q
Contextual Info: NM27C010 1,048,576-Bit 128K x 8 High Performance CMOS EPROM The NM27C010 is m anufactured using Fairchild’s advanced CM OS AM G EPROM technology. General Description The NM27C010 is a high performance, 1,048,576-bit Electrically Program mable UV Erasable Read Only Memory. It is organized

27C020

Abstract: 27C040 27C080 27C256 27C512 NM27C010
Contextual Info: NM27C010 1,048,576-Bit 128K x 8 High Performance CMOS EPROM The NM27C010 is m anufactured using Fairchild’s advanced CM OS AM G EPROM technology. General Description The NM27C010 is a high performance, 1,048,576-bit Electrically Program mable UV Erasable Read Only Memory. It is organized

AM27CO10

Abstract: AM27C010
Contextual Info: Advanced Micro Devices Am27C010 1 Megabit 131,072 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • — 90 ns Latch-up protected to 100 mA from -1 V to Vcc + 1 V Low pow er consum ption High noise im m unity Fast access tim e ■ ■ — 20 (iA typical CMOS standby current

Contextual Info: F IN A L A M D il Am27C010 1 Megabit 128 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc + 1 V ■ Fast access time — Speed options as fast as 45 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing

Contextual Info: FINAL A M D il Am27C010 1 Megabit 128 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • 100% Flashrite programming ■ Fast access time — Speed options as fast as 45 ns — Typical programming time of 16 seconds ■ Low power consumption ■ Latch-up protected to 100 mA from -1 V to

gy-27

Abstract: 27C010 27C010-70 CY27C010 27C010-90 600-MIL ScansUX33
Contextual Info: s ï«r W CYPRESS Features • CMOS for optimum speed/power • High speed — *AA = 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization' • 100% reprogrammable in the windowed package • EPROM technology