27C256 EPROM Search Results

27c256

Abstract: Signetics 27c256 OT27C256
Contextual Info: Signetics 27C256 256K CMOS UV Erasable PROM 32 K x 8 Product Specification Military Application Specific Products DESCRIPTION CERDIP PIN CONFIGURATION The Signetics 27C256 CMOS EPROMs are 256K-BR 5V only memories organized as 32,768 words of 8 bits. They employ

Philips FA 291

Abstract: 27C256A12A 27C256 Signetics 27c256 eprom 27c256 dfp 740 27C256-15FA 550mi 27C256-15 27C256-17
Contextual Info: OEC 2 6 1990 Philips Components-Signetics Document No. 853-0094 ECN No. 01040 Date of Issue November 12,1990 Status Product Specification 27C256 256K-bit CMOS EPROM 32K x 8 Memory Products PIN CONFIGURATION DESCRIPTION FEATURES Philips Components-Signetics 27C256

Contextual Info: 27C256 M icrochip 256K 32K x 8 CMOS EPROM FEATURES DESCRIPTION High speed performance The Microchip Technology Inc 27C256 is a CMOS 256K — 90ns maximum access time bit (electrically) Programm able Read Only Memory. The CMOS Technology for low power consumption

27C32

Abstract: 27C256s eprom 27c256 eprom 27C16 27C128 27C256 27C512 27C64 C1995 27C256 General Semiconductor
Contextual Info: 27C256 262 144-Bit 32 768 x 8 UV Erasable CMOS PROM Military Qualified General Description Features The 27C256 is a high-speed 256K UV erasable and electrically reprogrammable CMOS EPROM ideally suited for applications where fast turnaround pattern experimentation

Contextual Info: & 27C256 Microchip 256K 32K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance The Microchip Technology Inc 27C256 is a CMOS 256K — 90ns access time available • CMOS Technology for low power consumption bit (electrically) Programmable Read Only Memory. The

Contextual Info: 27C256 & Microchip 256K 32K x 8 CMOS EPROM DESCRIPTION FEATURES The Microchip Technology Inc 27C256 is a CMOS 256K bit (electrically) Programmable Read Only Memory. The device is organized as 32K words by 8 bits (32K bytes). Accessing individual bytes from an address transition or

eprom 27c256 28 PIN DIP 120 NS

Contextual Info: TM NM27C256 262,144-Bit 32K x 8 High Performance CMOS EPROM General Description The NM 27C256 is one m em ber of a high density EPROM Family which range in densities up to 4 Mb. The NM 27C256 is a 256K Electrically Program mable Read Only Memory. It is m anufactured in Fairchild’s latest CM OS split gate

Contextual Info: & 27C256 Microchip 256K 32K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance The Microchip Technology Inc 27C256 is a CMOS 256K bit (electrically) P rogramm able Read Only Memory. The — 90ns access time available device is organized as 32K words by 8 bits (32K bytes).

Contextual Info: b5Q112b NATL SEMICOND MEMORY 3 3 1E D March 1989 _ i i l Semiconductor 27C256 262,144-Bit (32,768 x 8) UV Erasable CMOS PROM Military Qualified 35-V General Description Features The 27C256 is a high-speed 256K UV erasable and electri­ cally reprogrammable CMOS EPROM, Ideally suited for ap­

eprom 27c256 28 PIN DIP 120 NS

Abstract: 27C256-15 200B 27C256 27C256-10 27C256-12 27C256-20
Contextual Info: 27C256 256K 32K x 8 CMOS EPROM TSOP OE A11 A9 A8 A13 A14 VCC 1 2 3 4 5 6 7 VPP A12 A7 A6 A5 A4 A3 8 9 10 11 12 13 14 27C256 A complete family of packages is offered to provide the most flexibility in applications. For surface mount applications, PLCC, SOIC, VSOP or TSOP packaging is

27C256

Abstract: OT27C256 Signetics 27c256 2561b U 2561B 27C256/BUA-20 BXA-20 27C256 UV
Contextual Info: NAPC/ S I G N E T I C S / M I L I T AR Y 5bE D • GQQ2QDB S T Signetics - y 27C256 256K CMOS UV Erasable PROM 32 K x 8 Product Specification Military Application Specific Products DESCRIPTION CERDIP PIN CONFIGURATION The Signetics 27C256 CMOS EPROMs are 256K-Bit 5V only memories organized

seeq 27c256

Contextual Info: eeeo 27C256 256K CMOS EPROM N ovem ber 1989 Pin Configuration Features a 256K 32K x 8 CMOS EPROM 27C256 • Ultra Low Power J V CC c 27 J A 14 3 26 J A 13 A6 I 4 25 A5 c 5 24 23 *1 2 ■ Programmed Using Intelligent Algorithm • 12.5 V Vpp ■ 200 ns Access Times

Contextual Info: GENERAL INSTRUMENT 27C256 PRELIMINARY INFORMATION 256K 32K x 8 CMOS UV Erasable PROM FEATURES PIN CONFIGURATIONS Top View V p p E •1 A 12C 2 28 □ VDD 27 □ A14 A7tZ 3 26 H A13 A6 C 4 25 □ A8 A5C 5 24 □ A9 A4 d The 27C256 is available in an extensive selection of

27C256 rom

Contextual Info: 27C256 256K CMOS EPROM November 1989 Pin Configuration Features 27C256 m 2 5 6 K 3 2K x 8 C M O S E PR O M Ultra Lo w P ow er • 100 \iA Max. Vcc S tandby C urrent • 4 0 m A Max. A ctive C urrent • ■ Vpp 28 S V cc 2 27 J A 14 3 26 J a 13 c 4 25 J

27C256

Abstract: DS-1100 27C256-15 27C256 DIP DSA0020944 fd179x 27C256-10 27C256-12 27C256-20
Contextual Info: 27C256 256K 32K x 8 CMOS EPROM PACKAGE TYPES TSOP OE A11 A9 A8 A13 A14 VCC 1 2 3 4 5 6 7 VPP A12 A7 A6 A5 A4 A3 8 9 10 11 12 13 14 27C256 A10 CE D7 D6 D5 D4 D3 21 20 19 18 17 16 15 VSS D2 D1 D0 A0 A1 A2 30 31 1 32 2 A7 A12 VPP NU Vcc A14 A13 3 4 29 6 28

27C256

Abstract: eprom 27c256 28 PIN DIP 150 NS 27C256-12 signetics eprom 27c256 28 PIN DIP 150 NS j package signetics 27C256 27c256 signetics eprom 27c256 28 PIN DIP 120 NS 27C256DC ti 27c256 27C256-12
Contextual Info: Philips Components-Signetics 27C256 Document No. 8 53 -0 0 94 ECN No. 01040 Date of Issue Novem ber 12, 1990 Status Product Specification 256K-bit CMOS EPROM 32K x 8 Memory Products PIN CONFIGURATION DESCRIPTION FEATURES Philips Com ponents-Signetics 2 7C 256

Contextual Info: M 27C256 ic r o c h ip 256K 32K x 8 CMOS EPROM FEATURES PACKAGE TYPES • High speed performance - 90 ns access time available • CMOS Technology for low power consumption - 20 mA Active current - 100 nA Standby current • Factory programming available

27CS12

Abstract: 27C256-200V10 27C126 27c256-200 D27c256b intel 27126 intel PLD 27C256
Contextual Info: INTEL CORP flEflORY/PLD/ 44E D 405bl7b GDVIS^ ' T 7% in ta l T • ITL2 ' ß - 2 ci 27C256 256K (32K x 8 CHMOS EPROM High Speed — 120 ns Access Time Low Power Consumption — 100 /xA Standby, 30 mA Active Fast Programming — Quick-Pulse Programming

N27C256-200V10

Contextual Info: in t j, 27C256 256K 32K x 8 CHMOS EPROM • High Speed — 120 ns Access Time ■ Low Power Consumption — 100 juA Standby, 30 mA Active ■ Fast Programming — Quick-Pulse Programming Algorithm — Programming Time as Fast as 4 Seconds ■ EPI Processing

Contextual Info: M 27C256 ic r o c h ip 256K 32K x 8 CMOS EPROM FEATURES PIN CONFIGURATION • High speed performance — 90 ns access time available • CMOS Technology for low power consumption — 20 mA Active current — 100 (iA Standby current • Factory programming available

27C256-200V10

Abstract: eprom 27c256 28 PIN DIP 120 NS P27C256-120V10 27C256DC INTEL 27128A EPROM 2732A INTEL 24 PIN CERAMIC DIP 27C256 N27C256-150V10 386TM
Contextual Info: In te l’ 27C256 256K 32K x 8 CHMOS EPROM High Speed — 120 ns Access Tim e EPI Processing — Maximum Latch-up Immunity Low Pow er Consumption — 100 juA Standby, 30 mA Active Simple Interfacing — T w o Line Control — CMOS and TTL Com patible Fast Programming

Contextual Info: 27C256 M ic r o c h ip 256K 32K x 8 CMOS EPROM FEATURES PACKAGE TYPES • High speed performance - 90 ns access time available • CMOS Technology for low power consumption - 20 mA Active current - 100 nA Standby current • Factory programming available

27256 ROM

Abstract: general semiconductor sm 11
Contextual Info: O K I Semiconductor INTRODUCTION PARAWRITER GENERAL DESCRIPTION The PARAW RITER writes data for up to ten MSM 6378As at a time using a master EPROM 27256 , which is prepared with the EPROM BACKUP writer. SPECIFICATIONS M aster ROM : 27C256 or 27256 Program mable : MSM 6378A

Contextual Info: M 27C256 ic r o c h ip 256K 32K x 8 CMOS EPROM FEATURES PIN CONFIGURATION • High speed performance — 90 ns access time available • CMOS Technology for low power consumption — 20 mA Active current — 100 nA Standby current • Factory programming available