27C256-17 EPROM Search Results

27C256 DIP

Abstract: 200B 27C256 27C256-10 27C256-12 27C256-15 27C256-20
Contextual Info: 27C256 256K 32K x 8 CMOS EPROM PACKAGE TYPES TSOP OE A11 A9 A8 A13 A14 VCC 1 2 3 4 5 6 7 VPP A12 A7 A6 A5 A4 A3 8 9 10 11 12 13 14 27C256 A10 CE D7 D6 D5 D4 D3 21 20 19 18 17 16 15 VSS D2 D1 D0 A0 A1 A2 30 31 1 32 2 A7 A12 VPP NU Vcc A14 A13 3 4 29 6 28

27C256

Abstract: DS-1100 27C256-15 27C256 DIP DSA0020944 fd179x 27C256-10 27C256-12 27C256-20
Contextual Info: 27C256 256K 32K x 8 CMOS EPROM PACKAGE TYPES TSOP OE A11 A9 A8 A13 A14 VCC 1 2 3 4 5 6 7 VPP A12 A7 A6 A5 A4 A3 8 9 10 11 12 13 14 27C256 A10 CE D7 D6 D5 D4 D3 21 20 19 18 17 16 15 VSS D2 D1 D0 A0 A1 A2 30 31 1 32 2 A7 A12 VPP NU Vcc A14 A13 3 4 29 6 28

27C256

Abstract: 27C256-10 27C256-12 27C256-15 27C256-20 st 27c256 10f
Contextual Info: Obsolete Device 27C256 256K 32K x 8 CMOS EPROM 30 31 1 32 2 A7 A12 VPP NU Vcc A14 A13 3 4 5 29 6 28 7 27 8 9 10 11 26 25 24 23 A8 A9 A11 NC OE A10 CE O7 O6 20 19 18 17 21 16 22 13 15 12 14 A6 A5 A4 A3 A2 A1 A0 NC O0 DIP/SOIC VPP A12 A7 A6 A5 A4 A3 A2 A1

27C256 Microchip

Abstract: Microchip 27C256 200B 27C256 27C256-10 27C256-12 27C256-15 27C256-20
Contextual Info: 27C256 256K 32K x 8 CMOS EPROM 30 31 1 32 2 A7 A12 VPP NU Vcc A14 A13 3 4 5 29 6 28 7 27 8 9 10 11 26 25 24 23 A8 A9 A11 NC OE A10 CE O7 O6 20 19 18 17 21 16 22 13 15 12 14 A6 A5 A4 A3 A2 A1 A0 NC O0 DIP/SOIC VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 O0 O1 O2 VSS

27C256 Microchip

Abstract: fd179x 200B 27C256 27C256-10 27C256-12 27C256-15 27C256-20 MICROCHIP 27C256
Contextual Info: 27C256 256K 32K x 8 CMOS EPROM 30 31 1 32 2 A7 A12 VPP NU Vcc A14 A13 3 4 5 29 6 28 7 27 8 9 10 11 26 25 24 23 A8 A9 A11 NC OE A10 CE O7 O6 20 19 18 17 21 16 22 13 15 12 14 A6 A5 A4 A3 A2 A1 A0 NC O0 DIP/SOIC VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 O0 O1 O2 VSS

27c256

Abstract: Signetics 27c256 OT27C256
Contextual Info: Signetics 27C256 256K CMOS UV Erasable PROM 32 K x 8 Product Specification Military Application Specific Products DESCRIPTION CERDIP PIN CONFIGURATION The Signetics 27C256 CMOS EPROMs are 256K-BR 5V only memories organized as 32,768 words of 8 bits. They employ

Signetics 27c256

Abstract: 27C256 UV 27C256 F0342
Contextual Info: S i g n e t i c s Military Application Specific Products DESCRIPTION 1 2 7 C 2 5 6 I I 256K CMOS UV Erasable PROM 32Kx8 | Product Specification CERDIP PIN CONFIGURATION The Signetics 27C256 CMOS EPROMs are 2S6K-BK 5 V only memories organized as 32,768 words of 8 bits. They employ

N27C256-200V10

Contextual Info: in t j, 27C256 256K 32K x 8 CHMOS EPROM • High Speed — 120 ns Access Time ■ Low Power Consumption — 100 juA Standby, 30 mA Active ■ Fast Programming — Quick-Pulse Programming Algorithm — Programming Time as Fast as 4 Seconds ■ EPI Processing

eprom 27c256 28 PIN DIP 120 NS

Abstract: 27c256 intel eprom 2732A 2716 eprom datasheet 27C256DC a12g intel 2716 eprom 27C256 N27C256-200V10 80286 address decoder
Contextual Info: in t e i 27C256 256K 32K x 8 CHMOS EPROM High Speed — 120 ns Access Time EPI Processing — Maximum Latch-up Immunity Low Power Consumption — 100 ( i A Standby, 30 mA Active Simple Interfacing — Two Line Control — CMOS and TTL Compatible Fast Programming

eprom 27c256 28 PIN DIP 120 NS

Abstract: 27C256-15 200B 27C256 27C256-10 27C256-12 27C256-20
Contextual Info: 27C256 256K 32K x 8 CMOS EPROM TSOP OE A11 A9 A8 A13 A14 VCC 1 2 3 4 5 6 7 VPP A12 A7 A6 A5 A4 A3 8 9 10 11 12 13 14 27C256 A complete family of packages is offered to provide the most flexibility in applications. For surface mount applications, PLCC, SOIC, VSOP or TSOP packaging is

27C256

Abstract: OT27C256 Signetics 27c256 2561b U 2561B 27C256/BUA-20 BXA-20 27C256 UV
Contextual Info: NAPC/ S I G N E T I C S / M I L I T AR Y 5bE D • GQQ2QDB S T Signetics - y 27C256 256K CMOS UV Erasable PROM 32 K x 8 Product Specification Military Application Specific Products DESCRIPTION CERDIP PIN CONFIGURATION The Signetics 27C256 CMOS EPROMs are 256K-Bit 5V only memories organized

Contextual Info: b5Q112b NATL SEMICOND MEMORY 3 3 1E D March 1989 _ i i l Semiconductor 27C256 262,144-Bit (32,768 x 8) UV Erasable CMOS PROM Military Qualified 35-V General Description Features The 27C256 is a high-speed 256K UV erasable and electri­ cally reprogrammable CMOS EPROM, Ideally suited for ap­

Contextual Info: 27C256 M i c r o c h ip 256K 32K x 8 CMOS EPROM FEATURES P A C K A G E TYPE • High speed performance - 90 ns access time available • CMOS Technology for low power consumption - 20 mA Active current - 100 nA Standby current • Factory programming available

27C256-200

Abstract: CY27C256 27C256 27C256-45 27C256-70 27C256-150 27c256 cypress 27C256200 eprom 27c256 28 PIN DIP 150 NS
Contextual Info: CY27C256 32K x 8ĆBit CMOS EPROM into a lowĆpower standĆby mode. The and low current requirements allow for CY27C256 is packaged in the industry gang programming. The EPROM cells alĆ standard 600Ćmil DIP, PLCC, and TSOP low each memory location to be tested

winbond 25080

Abstract: 29F200BB 16LF648A 89V51RD2 18f252 89S51 National SEMICONDUCTOR GAL16V8 29sf040 12f675 29F400BB
Contextual Info: Dataman-S4 Version 3.00 <ALL> Devices List - 1. S4 8 bit EPROM lib. V3.00 - AMD 27010

27CS12

Abstract: 27C256-200V10 27C126 27c256-200 D27c256b intel 27126 intel PLD 27C256
Contextual Info: INTEL CORP flEflORY/PLD/ 44E D 405bl7b GDVIS^ ' T 7% in ta l T • ITL2 ' ß - 2 ci 27C256 256K (32K x 8 CHMOS EPROM High Speed — 120 ns Access Time Low Power Consumption — 100 /xA Standby, 30 mA Active Fast Programming — Quick-Pulse Programming

Contextual Info: CY27C256 y CYPRESS 32K x 8-Bit CMOS EPROM into a low-power stand-by mode. The CY27C256 is packaged in the industry standard 600-mil DIP, PLCC, and TSO P packages. T he CY27C256 is also available in a C erD IP package equipped with an erasure window to provide for reprogram ­

Contextual Info: M 27C256 ic r o c h ip 256K 32K x 8 CMOS EPROM FEATURES PIN CONFIGURATION • High speed performance — 90 ns access time available • CMOS Technology for low power consumption — 20 mA Active current — 100 (iA Standby current • Factory programming available

27C256 rom

Contextual Info: 27C256 256K CMOS EPROM November 1989 Pin Configuration Features 27C256 m 2 5 6 K 3 2K x 8 C M O S E PR O M Ultra Lo w P ow er • 100 \iA Max. Vcc S tandby C urrent • 4 0 m A Max. A ctive C urrent • ■ Vpp 28 S V cc 2 27 J A 14 3 26 J a 13 c 4 25 J

CY27C256

Abstract: 27C256-70 27C256 27C256-200 27C256-45 27C256 UV 27C256-150 27c256120
Contextual Info: fax id: 3013 1CY 27C2 56 CY27C256 32K x 8-Bit CMOS EPROM Features able in a CerDIP package equipped with an erasure window to provide for reprogrammability. When exposed to UV light, the EPROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating gate technology and

1SHB

Abstract: 27C256 AMD 27C256 27C256 amd
Contextual Info: Advanced Micro Devices Am27C256 256 Kilobit 32,768 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to ■ Fast access time Vcc + 1 V — 55 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing

Contextual Info: 27C256 & Microchip 256K 32K x 8 CMOS EPROM DESCRIPTION FEATURES The Microchip Technology Inc 27C256 is a CMOS 256K bit (electrically) Programmable Read Only Memory. The device is organized as 32K words by 8 bits (32K bytes). Accessing individual bytes from an address transition or

Contextual Info: M 27C256 ic r o c h ip 256K 32K x 8 CMOS EPROM FEATURES PIN CONFIGURATION • High speed performance — 90 ns access time available • CMOS Technology for low power consumption — 20 mA Active current — 100 nA Standby current • Factory programming available

Contextual Info: 27C256 M ic r o c h ip 256K 32K x 8 CMOS EPROM FEATURES PACKAGE TYPES • High speed performance - 90 ns access time available • CMOS Technology for low power consumption - 20 mA Active current - 100 nA Standby current • Factory programming available