27C512* PLCC Search Results

Contextual Info: Philips Components-Signetics 27C512 Document No. 853-1360 ECN No. 01042 Date of Issue November 12,1990 Status Product Specification 512K-bit CMOS EPROM 64K x 8 Memory Products DESCRIPTION Philips Components-Signetics 27C512 CMOS EPROM is a 512K-bit 5V read

OT 27C512

Abstract: 27c512 SOIC-28 27C512 microchip
Contextual Info: & 27C512 Microchip _ 512K 64K x 8 CMOS UV Erasable PROM FEATURES DESCRIPTION The Microchip Technology Inc 27C512 is a CMOS 512K • High speed performance bit (ultraviolet light) Erasable (electrically) Program­ — 120ns access time available • CMOS Technology for low power consumption

Contextual Info: 27C512 Microchip 512K 64K x 8 CMOS EPROM DESCRIPTION FEATURES The Microchip Technology Inc 27C512 is a CMOS 512K • High speed performance bit (electrically) P rogramm able Read Only Memory. The — 90ns access tim e available device is organized into 64K words by 8 bits (64K bytes).

Contextual Info: MICROCHIP TECHNOL OGY INC E5E D bl032Gl OGG47fic| Tms-zPi 27C512 Microchip 512K 64K X 8 CMOS UV Erasable PROM FEATURES DESCRIPTION The Microchip Technology Inc 27C512 Is a CMOS 512K bit (ultraviolet light) Erasable (electrically) Program­ mable Read Only Memory. The device is organized into

DS60014

Contextual Info: & 27C512 M icro ch ip 512K 64K x 8 CMOS EPROM DESCRIPTION FEATURES The Microchip Technology Inc 27C512 is a CMOS 512K • High speed performance — 120ns access time available • CMOS Technology for low power consumption — 35mA Active current — 100p.A Standby current

27c512p

Contextual Info: & 27C512 M icro ch ip 512K 64K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance The Microchip Technology Inc. 27C512 is a CMOS 512K bit (electrically) Programmable Read Only Memory. The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address

27C010

Abstract: 27C020 27C040 27C080 27C256 A12C NM27C512
Contextual Info: NM27C512 524,288-Bit 64K x 8 High Performance CMOS EPROM General Description The NM 27C512 is one m em ber of a high density EPROM Family which range in densities up to 4 Megabit. The NM 27C512 is a high performance 512K UV Erasable Electri­ cally Program mable Read O nly Mem ory (EPROM). It is m anufac­

Contextual Info: GENERAL INSTRUMENT 27C512 P f ô E L D B lIN l f à Y I I M F O M A T O O M 512K 64K x 8 CMOS UV Erasable PROM PIN CONFIGURATION Top View •1 A 15C The 27C512 is available in an extensive selection of package options. Windowed CERDIP packages and leadless chip carriers provide programmability needed

Microchip 27C512

Abstract: 27C512 microchip 45 27C512 microchip 27c512 SOIC K7C5 127C512 i27C512 eprom 27C512 28pin eprom 27C512 27C512
Contextual Info: & 27C512 Microchip 512K 64K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance —90ns access time available • CMOS Technology for low power consumption —35mA Active current — 100nA Standby current • Factory programming available • Auto-insertion-compatible plastic packages

Contextual Info: $ M 27C512 ic r o c h ip 512K 64K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance — 90 ns access time available • CMOS Technology for low power consumption — 35 mA Active current — 100 |iA Standby current • Factory programming available

w27c512

Contextual Info: W27C512 sSSSs E lectronics Corp. 64K x 8 ELECTRICALLY ERASABLE EPROM GENERAL DESCRIPTION The W27C512 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65536 x 8 bits that operates on a single 5 volt power supply. The W 27C512

Microchip 27C512

Abstract: 27C512 UV 127C512
Contextual Info: M 27C512 ic r o c h ip 512K 64K x 8 CMOS EPROM FEATURES DESCRIPTION • High speed performance —90 ns access time available • CMOS Technology for low power consumption —35 mA Active current — 100 HA Standby current • Factory programming available

27c512-20fa

Abstract: 27C512 27C512-12 AT 270512 27c512-15n 27C512-15FA eprom 27C512 28pin 27C512-1 27CS12-20 m 270512
Contextual Info: Philips Components-Signetics Document No. 8 53-1360 27C512 ECN No. 01042 51 2K -b it C M O S E P R O M 6 4 K x 8 Date of Issue Novem ber 12, 1990 Status Product Specification Memory Products PIN CONFIGURATION DESCRIPTION FEATURES Philips Com ponents-Signetics 27C 512

intel 27c512 eprom

Abstract: 27C512-200V10 i27C512 d27c512 27C512-120V10 I27C256 intel 27c512 29022 27C512-1 27C512-2
Contextual Info: INTEL CORP MEMORY/LOGIC 50E D • 4fl2hl7b GObböOH *4 ■ In te l' T -V L -lS -tS 27C512 *T“-V6-/3 -29 512K (64K x 8) CHMOS PRODUCTION AND UV ERASABLE PROMS ■ Software Carrier Capability ■ 120 ns Access Time ■ Two-Line Control ■ Inteligent identifier Mode

27C512

Abstract: 28C64 EPROM programmer Winbond 27c512 27C256 27PC512 st 27c256b 2864A 27pc256 32 pin plcc socket to dil 27c65
Contextual Info: AD50/62 - Package Converters for E E PROMs and FLASH etc (PLCC) Q u C j j lP Page 1 of 5 PRODUCX d a t a sh eet AD62 and AD50 Package Converters for E(E)PROMs and FLASH etc (PLCC) Product Code Pins on skt Pins on Base Wiring Code Package Base pitch” Miscellaneous

st 27c256b

Abstract: 28C64 EPROM programmer Winbond 27c512 27c65 eprom AM2764A intel 27c512 eprom L27C128 2864a 28H256 27C512
Contextual Info: PRODUCT DATA SHEET AD62 479-913 and AD50 (479-834) Package Converters for E(E)PROMs and FLASH etc (PLCC) Product Code Pins on skt Pins on Base Wiring Code Package Base pitch" Miscellaneous AD62 32 28 01 P .6 Clamshell Product Code Pins on skt Pins on Base

27C512

Abstract: 27C512-15 27C512-150 eprom 27C512 CY27C512
Contextual Info: r CYPRESS 64Kx 8 CMOS EPROM Functional Description Features • CMOS for optimum speed/power • High speed — t.v\ = 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the

27C512-70

Abstract: 1N3064 27C512 27C512-150 CY27C512 CY27C512-150WC
Contextual Info: ?/ CYPRESS 64Kx 8 CMOS EPROM Functional Description Features • CMOS for optimum speed/power • High speed — t.v\ = 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the

intel 27c512 eprom

Abstract: Needham Electronics PB-10 Programmer 27HC010 intel 27C512 27C256 minato Model 1890A EEPROM 27C256 programmers 1890a RomMax issi 24C04
Contextual Info: ISSI Integrated Silicon Solution, Inc. EPROM PROGRAMMING SUPPORT GUIDE MAY 1996 EPROM PROGRAMMING SUPPORT ISSI’s Programmer Support List Qualified Programmer List The EPROM programmers listed are qualified to program ISSI’s EPROM products. The software revisions necessary should be readily

27HC010

Abstract: intel 27c512 GANgpro-s Needham Electronics PB-10 Programmer RomMax 27c256 GANgpro 27c512 allmax intel 28F010
Contextual Info: & EPROM ISSI PROGRAMMING SUPPORT ISSI’s Programmer Support List Qualified Programmer List The EPROM programmers listed are qualified to program ISSI’s EPROM products. The software revi­ sions necessary should be readily available, but, if you have any one of these programmers with an

PA32-28

Abstract: PA32-28Z 3228R clcc 28 socket 32 pin plcc socket socket Yamaichi 27C512* PLCC 28-pin footprint plcc 32 clcc 32 socket
Contextual Info: PA32-28 Z Data Sheet 32 pin PLCC socket/28 pin DIP 0.6” plug Supported Device/Footprints Adapter Construction This adapter allows programming of several 32 pin PLCC and CLCC devices in their 28 pin DIP footprint. The adapter is made up of 2 sub-assemblies. They assemble via

Contextual Info: CYPRESS 64K x 8 CMOS EPROM Functional Description Features • CMOS for optimum speed/power • High speed — t*A = 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization • 100% reprogrammable in the

Contextual Info: à * T7CC1 CY27C512 ADVANCED INFORMATION C Y r n h o o 64K x 8 CMOS EPROM Features Functional D escription • CMOS for optimum speed/power • High speed — Iaa - 70 ns max. • Low power — 220 mW max. — Less than 85 mW when deselected • Byte-wide memory organization

d501ad

Contextual Info: Advanced Micro Devices Am27C512 512 Kilobit 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Fast access time — 55 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing