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    Bimba Manufacturing Company LT-027-DBM

    Thruster, Linear Thruster Cylinder ; 9/16in Bore ; Stroke: 7 in; Double Acting | Bimba LT-027-DBM
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    RS LT-027-DBM Bulk 5 Weeks 1
    • 1 $73.56
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    Bimba Manufacturing Company LT-5027-DBM

    Thruster, Linear Thruster Cylinder ; 2-1/2in Bore ; Stroke: 27 in; Double Actin | Bimba LT-5027-DBM
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    RS LT-5027-DBM Bulk 5 Weeks 1
    • 1 $321.45
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    Bimba Manufacturing Company LT-027-DBMQT1

    Thruster, Linear Thruster Cylinder ; 9/16in Bore ; Stroke: 7 in; Double Acting | Bimba LT-027-DBMQT1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-027-DBMQT1 Bulk 5 Weeks 1
    • 1 $78.65
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    Murata Manufacturing Co Ltd DXW21BN7511TL

    Signal Conditioning 50-870 MHZ BALUN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI DXW21BN7511TL Reel 2,000 2,000
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    27DBM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    H40P

    Abstract: NN12 P35-5135-000-200
    Text: P35-5135-000-200 HEMT MMIC 0.5W POWER AMPLIFIER, 28GHz Features • • • Gain; 16dB typical @ 28GHz P-1dB; 27dBm typical @ 28GHz 5dB Typical Noise Figure Description The P35-5135-000-200 is a high performance 28GHz Gallium Arsenide power amplifier, capable of output powers


    Original     		PDF P35-5135-000-200 28GHz 27dBm P35-5135-000-200 28GHz 463/SM/02574/000 H40P NN12

    GALI-S66

    Abstract: No abstract text available
    Text: MMIC Amplifier GALI-S66+ Typical Performance Curves GAIN vs. TEMPERATURE GAIN vs. CURRENT INPUT POWER = -27dBm, CURRENT = 16mA INPUT POWER = -27dBm, Temperature = +25°C 40 40 35 -45°C 35 13mA 30 +25°C 30 16mA 25 +85°C 25 19mA 20 dB (dB) 20 15 15 10 10


    Original     		PDF GALI-S66+ -27dBm, GALI-S66

    2110 - 2170mhz power module

    Abstract: No abstract text available
    Text: RMPA2059 WCDMA PowerEdge Power Amplifier Module Features General Description • 40% CDMA efficiency at +27dBm average output power • Single positive-supply operation and low power and shutdown modes • Meets UTMS/WCDMA and HSDPA performance requirements


    Original     		PDF RMPA2059 RMPA2059 27dBm 2110 - 2170mhz power module

    NJG1600KB2

    Abstract: GRM36 NJG1600
    Text: 暫定資料 NJG1600KB2 Aug.23,2002 Ver.5 開発中 SPDT スイッチ GaAs MMIC Q概要 NJG1600KB2 は中電力、低損失を特徴とする SPDT スイッチ です。 100MHz から 2.5GHz の広帯域、 2.5V からの低電圧で動作し、 切替電圧 2.8V にて 27dBm の電力を切り替えることができます。


    Original     		PDF NJG1600KB2 100MHz 27dBm 26dBm GRM36) NJG1600KB2 GRM36 NJG1600

    4 PIN TO46 package

    Abstract: "TO46 4 pin" TO46 package 4 pin Photodetector 1550nm TIA AGC application note TO46 package AMT8210 AMT8210T46L4 AMT8210T46L5 TO46
    Text: AMT8210 1.25 Gb/s 1310/1550nm PIN-TIA FEATURES • 1.25 Gb/s differential output TIA • DC to 1000 MHz bandwidth • +3.3V Operation • -27dBm Typical sensitivity • 1250-1620nm PIN Photodetector • Automatic Gain Control AGC • 0dBm Optical Overload


    Original     		PDF AMT8210 1310/1550nm -27dBm 1250-1620nm AMT8210, 1620nm) AMT8210 4 PIN TO46 package "TO46 4 pin" TO46 package 4 pin Photodetector 1550nm TIA AGC application note TO46 package AMT8210T46L4 AMT8210T46L5 TO46

    qualcomm umts chipset

    Abstract: UMTS qualcomm block diagram of qualcomm AWT6270
    Text: AWT6270 HELP TM 830-840 MHz WCDMA 3.4V/27dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.5 FEATURES • InGaP HBT Technology • High Efficiency: 44% @ POUT = +27 dBm 21% @ POUT = +16 dBm AWT6270 15% @ POUT = +7 dBm • Low Quiescent Current: 16 mA


    Original     		PDF AWT6270 V/27dBm AWT6270 qualcomm umts chipset UMTS qualcomm block diagram of qualcomm

    Untitled

    Abstract: No abstract text available
    Text: RF2436 RF2436Transmit/Receive Switch TRANSMIT/RECEIVE SWITCH Package Style: SOT-5 Features      Single Positive Power Supply Low Current Consumption 1dB Insertion Loss at 900MHz 24dB Crosstalk Isolation at 900MHz +27dBm Output P1dB RX OUT 1


    Original     		PDF RF2436Transmit/Receive RF2436 900MHz 900MHz 27dBm RF2436 28dBm 2500MHz. 2002/95/EC DS120416

    MAX9985

    Abstract: No abstract text available
    Text: 19-5307; Rev 0; 6/10 Dual, SiGe, High-Linearity, 1200MHz to 1700MHz Downconversion Mixer with LO Buffer/Switch Features The MAX19993 dual-channel downconverter is designed to provide 6.4dB of conversion gain, +27dBm input IP3, 15.4dBm 1dB input compression point, and a noise


    Original     		PDF 1200MHz 1700MHz MAX19993 27dBm 1700MHz 1000MHz 1560MHz, MAX19993A, MAX19993. MAX9985

    7133 voltage regulator

    Abstract: MC20L10 photodiode preamplifier AGC MC2010 MC2010LDIEWP MC2010LWAFER MC2010SDIEWP MC2010SWAFER OC-24 MC20S
    Text: MC2010 PIN Pre-amplifier with AGC for 3.3V Fibre-Optics Applications to 1.25Gbs q q q q q q q F EATURES D ESCRIPTION Low cost IC. Fabricated in advanced sub-mi cron pure-CMOS process. Receiver sensitivity better than -27dBm @ 1.25Gbs MC20L10 Minimum 830MHz bandwidth and multi-pole


    Original     		PDF MC2010 25Gbs -27dBm MC20L10) 830MHz 25Gbs. MC20S10) MC2010 7133 voltage regulator MC20L10 photodiode preamplifier AGC MC2010LDIEWP MC2010LWAFER MC2010SDIEWP MC2010SWAFER OC-24 MC20S

    RF6509PCBA-410

    Abstract: RF6509 900MHZ
    Text: RF6509 Proposed 3.2V MODULE INTENDED TO INTEGRATE WITH 900MHZ AMR SOLUTIONS     1 RX Filter  31 30 29 2 Input V3S1 32 28 27 26 25 RX out/TX in Output V2S2 3 24 V1S2 4 23 V1S1 10 22 V2S1 5 Applications  LNA Vcc TX Output Power: 27dBm TX Gain: 31dBm


    Original     		PDF RF6509 900MHZ 27dBm 31dBm 32-Pin, 902MHz 928MHz DS090817 RF6509PCBA-410 RF6509

    Untitled

    Abstract: No abstract text available
    Text: SX1238 WIRELESS, SENSING & TIMING DATASHEET SX1238 - Fully Integrated Transceiver with +27dBm TX Power RFI VBAT1&2 VR_ANA VR_DIG RC Oscillator Power Distribution System Single to Differential ANT Decimation & Filtering Mixers PREAMP Demodulator & Bit Synchronizer


    Original     		PDF SX1238 SX1238 27dBm ISO9001

    Untitled

    Abstract: No abstract text available
    Text: HE315 Broadband Amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Curves GAIN Ta=+25℃ Ta=+85℃ Ta= - 55℃ Gain dB 23 Features 21 Frequency Range: 1～110MHz(typ) l Gain: 20dB(typ) l IP3(out): 40dBm(typ) l l 27dBm Typical 1dB Compression Standard Hermetic Package SP-1A


    Original     		PDF HE315 110MHz 40dBm 27dBm 15dBm 3300pF. 30dBm 18VDC)

    Untitled

    Abstract: No abstract text available
    Text: Frequency Mixer VAY-1+ Typical Performance Curves Conversion Loss vs. IF @ RF=250.1MHz Conversion Loss @ IF=30MHz 6.0 10 5.9 LO = +24dBm LO = +27dBm Conversion Loss dB Conversion Loss (dB) 9 5.8 8 LO = +27dBm 7 5.7 5.6 6 5.5 5 5.4 4 5.3 3 2 5.2 1 5.1 5.0


    Original     		PDF 30MHz 24dBm 27dBm

    schematics for a PA amplifier

    Abstract: MAX2242 APP3249 DECT schematic AN3249
    Text: Maxim/Dallas > App Notes > WIRELESS, RF, AND CABLE Keywords: DECT, Power Amplifier, PA, 1.9GHz, 1905MHz, 1905 MHz, DECT PA, DECT power amplifier May 27, 2004 APPLICATION NOTE 3249 1.9GHz DECT Power Amplifier Delivers +27dBm from 3.6V at 41% PAE The MAX2242 is an ultra-low cost silicon bipolar power amplifier PA with integrated bias-circuitry, logic-level


    Original     		PDF 1905MHz, 27dBm MAX2242 29dBm schematics for a PA amplifier APP3249 DECT schematic AN3249

    TOp-264 vg

    Abstract: No abstract text available
    Text: Wideband, Microwave, 0.5W Monolithic Amplifier 50Ω AVM-273HP+ 13 to 26.5GHz The Big Deal • • • • • Wideband 13 to 26.5 GHz Output power up to +27dBm Excellent directivity, 43 dB typ. @ 20 GHz Unconditionally stable Excellent gain flatness, ±1 dB


    Original     		PDF AVM-273HP+ 27dBm DG1677-1 TOp-264 vg

    RFPA5200

    Abstract: MCS7
    Text: RFPA5200 Preliminary 3.3V to 5.0V, 2.4GHz to 2.5GHz Integrated PA Module Package: Laminate, 4mm x 4 mm x 1 mm Features       POUT = 27dBm, 5V < 3% Dynamic EVM 33dB Typical Gain High PAE Integrated Input and Output 50Match Integrated Power Detector


    Original     		PDF RFPA5200 27dBm, 50Match RFPA5200 RFPA5200: DS121220 MCS7

    Mag 613

    Abstract: MGF0918A
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0918A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=27dBm TYP. @f=1.9GHz,Pin=8dBm


    Original     		PDF MGF0918A MGF0918A 27dBm 150mA Mag 613

    Untitled

    Abstract: No abstract text available
    Text: TGA2216-SM 0.1 – 3.0GHz 10W GaN Power Amplifier Applications • Commercial and military radar  Communications  Electronic Warfare QFN 5x5 mm 32L Product Features     Functional Block Diagram Frequency Range: 0.1 – 3.0GHz PSAT: >40dBm at PIN = 27dBm


    Original     		PDF TGA2216-SM 40dBm 27dBm 35dBm 360mA, TGA2216-SM

    UA 758 pc

    Abstract: NJG1507R f 0952
    Text: NJG1507R SPDT スイッチ GaAs MMIC •概要 NJG1507R は低損失、中電力、高アイソレーション を特徴とする SPDT スイッチです。 50MHz から 3.0GHz の広帯域、2.5V からの低電圧で 動作し、3.0V にて 27dBm までの電力を通過させること


    Original     		PDF NJG1507R 50MHz 27dBm 22dBm 27dBm UA 758 pc NJG1507R f 0952

    mitsubishi 7805

    Abstract: 7805 pi MGF0918A 7805 smd
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0918A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=27dBm TYP. @f=1.9GHz,Pin=8dBm


    Original     		PDF MGF0918A MGF0918A 27dBm 150mA 50pcs) d-162 mitsubishi 7805 7805 pi 7805 smd

    AWT6270

    Abstract: No abstract text available
    Text: AWT6270 830-840 MHz/WCDMA 3.4V/27dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.5 FEATURES • InGaP HBT Technology • High Efficiency: 44% @ POUT = +27 dBm 21% @ POUT = +16 dBm AWT6270 15% @ POUT = +7 dBm • Low Quiescent Current: 16 mA


    Original     		PDF AWT6270 V/27dBm AWT6270

    Untitled

    Abstract: No abstract text available
    Text: HE390A Broadband Amplifier BOWEI INTEGRATED CIRCUITS CO.,LTD. Typical Curves GAIN Ta=+25℃ Ta=+85℃ Ta= - 55℃ Gain dB 20 Features 18 16 Frequency Range: 10～500MHz l l P-1: 27dBm Standard l Hermetic Package SP-1A Operating Temperature Range: -55℃～+85℃


    Original     		PDF HE390A 500MHz 27dBm 6800pF. 30dBm 18VDC) 10000p 17VDC 15dBm

    Untitled

    Abstract: No abstract text available
    Text: RFPA3026 2.2GHz to 2.7GHz 2W InGaP AMPLIFIER RFPA3026 Proposed 2.2GHz TO 2.7GHz 2W InGaP AMPLIFIER Package: QFN VCC=5V Features RFPA3026  P1dB =33.6dBm at 5V  802.11g 54Mb/s Class AB Performance RF IN  POUT =26dBm at 2.5% EVM, VCC 5V, 570mA  POUT =27dBm at 2.5% EVM,


    Original     		PDF RFPA3026 54Mb/s 27dBm 513mA 26dBm 570mA DS120110

    5964-6D

    Abstract: No abstract text available
    Text: F, . FLM5964-6D r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 38.0dBm Typ. High Gain: G ^ b = 10.0ÒB (Typ.) High PAE: r!add = 36% (Typ.) Low IM3 = -45dBc@Po = 27dBm Broad Band: 5.9 ~ 6.4GHz


    OCR Scan     		PDF FLM5964-6D -45dBc 27dBm 5964-6D