27FEB06 Search Results

74153

Abstract: si6888
Contextual Info: SPICE Device Model Si6888EDQ Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

72204

Abstract: Si7942DP n-channel mos or gate
Contextual Info: SPICE Device Model Si7942DP Vishay Siliconix Dual N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

IH-10

Abstract: IH-15 IH10
Contextual Info: IH Vishay Dale Filter Inductors High Current FEATURES • Printed circuit mounting • Pre-tinned leads • Protected by polyolefin tubing - flame retardant UL type VW-1 per MIL-I-23053/5, Class 3 requirements Inductance: Measured at 1.0 V with zero DC current

Contextual Info: 4 3 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT BY TYCO ELECTRONICS CORPORATION. 2 - LOC REVISIONS DIST ALL RIGHTS RESERVED. LTR c DESCRIPTION DATE UPDATE PER ECO—0 6 —0 0 4 0 7 0 21 DWN FEB 06 APVD MJS MKS 2X .04 2X .04 D f .02

Contextual Info: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 * TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Si2302ADS-T1–E3 (Lead (Pb)–free)

CEA-XX-125UT-350

Abstract: CEA-XX-125UT-120 Vishay DSA0042583
Contextual Info: 125UT Vishay Micro-Measurements General Purpose Strain Gages - Tee Rosette GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS See Note 1 OPTIONS AVAILABLE See Note 2 CEA-XX-125UT-120 CEA-XX-125UT-350 120 ± 0.4% 350 ± 0.4% P2 P2 DESCRIPTION Two-element 90° tee rosette for general-purpose use.

SUD50P10-43

Contextual Info: SUD50P10-43 New Product Vishay Siliconix P-Channel 100-V D-S 175 _C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID –100 0.043 at VGS = –10 V (A)a –38 Qg (Typ) RoHS 105 nC COMPLIANT TO-252 S G Drain Connected to Tab

UHB10FT-E3

Contextual Info: UH10FT & UHB10FT New Product Vishay General Semiconductor Ultrafast Recovery Rectifier FEATURES • Oxide planar chip junction • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency • High forward surge capability

S6026

Abstract: Si7946DP S-60261
Contextual Info: SPICE Device Model Si7946DP Vishay Siliconix Dual N-Channel 150-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si7958DP

Abstract: S6026
Contextual Info: SPICE Device Model Si7958DP Vishay Siliconix Dual N-Channel 40-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si7940DP

Contextual Info: SPICE Device Model Si7940DP Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

LT 5239

Abstract: pt100 temperature 3 wire IHV15
Contextual Info: IHD Vishay Dale Filter Inductors High Current FEATURES • Printed circuit mounting axial leads • Protected by polyolefin tubing RoHS • High saturation bobbin used allowing high COMPLIANT inductance with low DC resistance • Pre-tinned leads • High resistivity core offers very high parallel resistance,

strain rosette

Abstract: CEA-XX-062UT-350 Rosettes CEA-XX-062UT-120 062UT 90TEE
Contextual Info: 062UT Vishay Micro-Measurements General Purpose Strain Gages - Tee Rosette GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS See Note 1 OPTIONS AVAILABLE See Note 2 CEA-XX-062UT-120 CEA-XX-062UT-350 120 ± 0.4% 350 ± 0.4% P2 P2 DESCRIPTION Small general-purpose two-element 90° tee rosette.

74152

Abstract: 74152 data sheet 74152 datasheet si6868
Contextual Info: SPICE Device Model Si6868EDQ Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si2325DS

Contextual Info: SPICE Device Model Si2325DS Vishay Siliconix P-Channel 150-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

IPB533

Contextual Info: H MICRO SWITCH F R E E P O R T . IL L IN O IS . U .S .A . A D IV IS IO N OF HONEYW ELL FE D . M F G . C O D E t l t t t CATALOG ASSEMBLYPUSHBUTTON SWITCH PO IPB533 CORROSI ON R E S I S T A N T S T E E L P L U N G E R , B U S H I N G , A ND B R A C K E T .25+ .02 R

Contextual Info: SUD50P10-43 New Product Vishay Siliconix P-Channel 100-V D-S 175 _C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID –100 0.043 at VGS = –10 V (A)a –38 Qg (Typ) RoHS 105 nC COMPLIANT TO-252 S G Drain Connected to Tab

Si2325DS

Contextual Info: SPICE Device Model Si2325DS Vishay Siliconix P-Channel 150-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: UH20FCT& UHB20FCT New Product Vishay General Semiconductor Dual Common-Cathode Ultrafast Recovery Rectifier TO-220AB FEATURES • Oxide planar chip junction • Ultrafast recovery times • Soft recovery characteristics • Low switching losses, high efficiency

031Rb

Abstract: EA-XX-031RB-120
Contextual Info: 031RB Vishay Micro-Measurements General Purpose Strain Gages - Rectangular Pattern GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS OPTIONS AVAILABLE See Note 1, 3 See Note 2 See Note 3 EA-XX-031RB-120 EP-08-031RB-120 SA-XX-031RB-120 120 ± 0.4% 120 ± 0.4%

Contextual Info: IHB Vishay Dale Filter Inductors High Current FEATURES • Printed circuit mounting • Wide range of inductance and current ratings RoHS • Pre-tinned leads ELECTRICAL SPECIFICATIONS Inductance: Measured at 1.0 V with no DC current Dielectric: 2500 VRMS between winding and 0.250"

Contextual Info: IHB Vishay Dale Filter Inductors High Current FEATURES • Printed circuit mounting • Wide range of inductance and current ratings RoHS • Pre-tinned leads ELECTRICAL SPECIFICATIONS Inductance: Measured at 1.0 V with no DC current Dielectric: 2500 VRMS between winding and 0.250"

IH-10

Abstract: IH-15 IH-5 SCR 2062 IH10
Contextual Info: IH Vishay Dale Filter Inductors High Current FEATURES • Printed circuit mounting • Pre-tinned leads • Protected by polyolefin tubing - flame retardant UL type VW-1 per MIL-I-23053/5, Class 3 requirements Inductance: Measured at 1.0 V with zero DC current

11SM2446

Abstract: honeywell 11SM2446 honeywell 91929
Contextual Info: MICRO SWITCH FREEPORT ILLINO IS, A OF DIVISION FED. M FG . U S A HONEYWELL CODE CATALOG AS S E M B LY PUSHBUTTON SWITCH L IS T IN G IP B 5 4 4 91929 «• s l- in cl O ° 0_ D R A W IN G NUMBER 2 CD ÜJ D 0 U> R E V IS IO N S a PR 8790 0 J S 23 MAY 8 0 CO