27SEP2001 Search Results

Contextual Info: M58LW032A 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory FEATURES SUMMARY • WIDE x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations – VDDQ = 1.8V to VDD for I/O Buffers

Contextual Info: M68AF511AL 4 Mbit 512K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 512K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 2V ■ TRI-STATE COMMON I/O

3-647502-5

Contextual Info: 4 THIS £L DRAWIN G IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R 1G H T S 2 20 LOC I . 5 ±0 . I [ . 059±.004] RESERVED. TYP ' î O O O O O O O O O O O O O O O O O O O O O O O — N N N B a B N B

M68AW511A

Abstract: SO32 TSOP32
Contextual Info: M68AW511A 4 Mbit 512K x8 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 512K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O

Contextual Info: M58LW032A 32 Mbit 2Mb x16, Uniform Block 3V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • WIDE x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations

1N4148

Abstract: db25 ISP LM393 driver 74VHC244 LM393
Contextual Info: 1 2 3 Buffer/Line Driver 4 VCC D1 D D R16 100 TCK R17 100 1N4148 R26 4.7k R25 4.7k R24 4.7k R23 4.7k R22 4.7k R21 4.7k AF R18 100 TDI U1 2 4 6 8 11 13 15 17 1 19 STROBE AUTO D0 INIT SEL_IN TDO D7 C 1A1 1A2 1A3 1A4 2A1 2A2 2A3 2A4 1G 2G 1Y1 1Y2 1Y3 1Y4 2Y1

ep 1387

Contextual Info: M68AW511A 4 Mbit 512K x8 3.0V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 2.7 to 3.6V 512K x 8 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 55ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O

Contextual Info: M68AF511AL 4 Mbit 512K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 512K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 2V ■ TRI-STATE COMMON I/O

18OCT

Contextual Info: M68AF511AL 4 Mbit 512K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 512K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 2V ■ TRI-STATE COMMON I/O

M68AF511AL

Abstract: M68AF511AM SO32 TSOP32
Contextual Info: M68AF511AL M68AF511AM 4 Mbit 512K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 512K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 2V ■ TRI-STATE COMMON I/O

VDR 0047

Abstract: TFBGA48 so32 mm M68AW511AL M68AW511AM SO32 TSOP32 6900 as
Contextual Info: M68AW511AL M68AW511AM 4 Mbit 512K x8 3.0V Asynchronous SRAM FEATURES SUMMARY SUPPLY VOLTAGE: 2.7 to 3.6V Figure 1. Packages 512K x 8 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 55ns LOW STANDBY CURRENT 32 LOW VCC DATA RETENTION: 1.5V 1 TRI-STATE COMMON I/O

e1418

Abstract: M68AW511AL SO32 TSOP32
Contextual Info: M68AW511AL 4 Mbit 512K x8 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.3V ■ 512K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O

M68AW511A

Abstract: SO32 TSOP32
Contextual Info: M68AW511A 4 Mbit 512K x8 3.0V Asynchronous SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE: 2.7 to 3.6V 512K x 8 bits SRAM with OUTPUT ENABLE EQUAL CYCLE and ACCESS TIMES: 55ns LOW STANDBY CURRENT LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O

M68AW511AL

Abstract: SO32 TSOP32
Contextual Info: M68AW511AL 4 Mbit 512K x8 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 512K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O

Contextual Info: T H 1S D R A W 1 NG jf 1S U N P U B L 1S H E D . COPYRIGHT RELEASED 19 BY AMP 1 NCOR POR A T E D . FOR ALL P U B L 1C A T 1 ON R IGHTS ,19 LOC DIST REVISIONS RESERVED. D E S C R I P T I ON DWN ADDED PART NUMBERS TOOL NUMBER WIRE SIZE mm2 [AWG] INSULATION

AI05445

Contextual Info: M68AW511AL 4 Mbit 512K x8 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 512K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O

M58LW032

Abstract: M58LW032A TSOP56
Contextual Info: M58LW032A 32 Mbit 2Mb x16, Uniform Block, Burst 3V Supply Flash Memory FEATURES SUMMARY • WIDE x16 DATA BUS for HIGH BANDWIDTH ■ Figure 1. Packages SUPPLY VOLTAGE – VDD = 2.7 to 3.6V core supply voltage for Program, Erase and Read operations ■ – VDDQ = 1.8V to VDD for I/O Buffers

CRYSTAL 32.768KHz DATASHEET KDS

Abstract: 2 pin crystal 1mhz oscillator of KDS KDS Crystals 32.768kHz M48T32-BR12SH KDS Crystals 32.768 quartz kds DMX chip DMX-26S SOH16 m48t32
Contextual Info: M41T315Y M41T315V, M41T315W Serial access phantom RTC supervisor Not For New Design Features • 3.0V, 3.3V, or 5V operating voltage ■ Real-time clock keeps track of tenths/hundredths of seconds, seconds, minutes, hours, days, date of the month, months, and years

Contextual Info: M68AW511AL 4 Mbit 512K x8 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 512K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V ■ TRI-STATE COMMON I/O

Contextual Info: M68AW511AL 4 Mbit 512K x8 3.0V Asynchronous SRAM PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 512K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 1.5V

Contextual Info: M41T315Y M41T315V, M41T315W Serial access phantom RTC supervisor Not For New Design Features • 3.0V, 3.3V, or 5V operating voltage ■ Real-time clock keeps track of tenths/hundredths of seconds, seconds, minutes, hours, days, date of the month, months, and years

MB91F364G

Abstract: AEQ32091 FR30 MB91360 MB91FV360GA FPT-120P-M21
Contextual Info: FUJITSU SEMICONDUCTOR FR50 32-BIT MICROCONTROLLER MB91F364G Short specification Release 1.6 6-Nov-2001 Fujitsu Ref. AEQ32091 FUJITSU MICROELECTRONICS EUROPE GmbH European Microcontroller Design Centre EMDC Am Siebenstein 6 D-63303 Dreieich-Buchschlag Fujitsu, EMDC

M48T32-BR12SH

Abstract: m48t32 M48T28-BR12SH M41T315V M41T315W M41T315Y M4TXX-BR12SH SOH28
Contextual Info: M41T315Y M41T315V, M41T315W Serial access phantom RTC supervisor Not For New Design Features • 3.0V, 3.3V, or 5V operating voltage ■ Real-time clock keeps track of tenths/hundredths of seconds, seconds, minutes, hours, days, date of the month, months, and years

M68AF511A

Abstract: SO32 TSOP32
Contextual Info: M68AF511A 4 Mbit 512K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 512K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O