2815 RC Search Results

LM310

Abstract: lm210 voltage follower D2815 LM110 LM102 LM210
Contextual Info: TYPES LM110, LM210, AND LM310 VOLTAGE FOLLOWERS LINEAR INTEGRATED CIRCUITS D 2815. O CTOBER 1983 . JG D U A L -IN -L IN E P AC KA G E L M 1 10 . Input Current . . . 10 n A M ax . . JG OR P D U A L-IN -LIN E PAC KAG E LM 210. LM 310 Sm all-Signal Bandwidth . . . 20 M H z

2815EC

Abstract: 2812 EC SFC2805EC 2824 ec 2818 ec SFC2812EC SFC2815RC 2805ec SF.C 2805 EC sfc 2812
Contextual Info: Linear integrated circuits - Voltage regulators continued C ircu its intégrés linéaires - R égulateurs de tension t oper Case B o îtie r Type Type In p u t range Gamme entrée (1) <V> (suiteJ O u tp u t range Gamme sortie Line regulation Régulât, entrée

ST-12

Abstract: Scans-0017396
Contextual Info: RCA-3 I POWER AMPLIFIER The 31 is a power-amplifier tube of the three-electrode type for bat­ tery-operated radio receivers where economy o f filament-current drain is important. CHARACTERISTICS F i l a m e n t V o l t a g e D . C . .

LM3975

Abstract: VJ0805Y105KXQ VJ0805Y223KXX CRCW12060R0J 1411 6 pin ic AN-1411 C3216X7R1H105K LM3075 RLF12545-7R8N5R4 Si4840
Contextual Info: National Semiconductor Application Note 1411 Jerry Zheng January 2006 Introduction This evaluation board generates 5V at 5A from a wide input voltage range of 8V to 25V utilizing the LM3075. The switching frequency is set at 300 kHz. This document contains the

SOT223 Package

Abstract: MARKING npn TRANSISTOR 1k sot223 MOTOROLA TRANSISTOR P1D
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT-223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS Rating Symbol Value U nit Collector-Emitter Voltage Open Base

2SC2802

Abstract: 2808 transistor n2818
Contextual Info: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

Contextual Info: User's Guide SNVA130A – January 2006 – Revised April 2013 AN-1411 LM3075 Evaluation Board 1 Introduction The LM3075 is a current mode synchronous buck controller. Use of synchronous rectification and pulseskipping operation at light load achieves high efficiency over a wide load range. Current mode control

APT20M11JLL

Abstract: 2815 rc
Contextual Info: APT20M11JLL 200V 176A 0.011Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT20M11JLL 200V 176A 0.011Ω POWER MOS 7 R MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

APT20M11JFLL

Contextual Info: APT20M11JFLL 200V 176A 0.011Ω POWER MOS 7 R FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

Contextual Info: APT20M11JFLL 200V 176A 0.011Ω POWER MOS 7 R FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON

AD7191

Abstract: AD7191BRUZ
Contextual Info: Pin-Programmable, Ultralow Noise, 24-Bit, Sigma-Delta ADC for Bridge Sensors AD7191 FEATURES GENERAL DESCRIPTION Pin-programmable output rate Output data rate: 10 Hz, 50 Hz, 60 Hz, 120 Hz Pin-programmable PGA Gain: 1, 8, 64, 128 Pin-programmable power-down and reset

Contextual Info: Pin-Programmable, Ultralow Noise, 24-Bit, Sigma-Delta ADC for Bridge Sensors AD7191 FEATURES GENERAL DESCRIPTION Pin-programmable output rate Output data rate: 10 Hz, 50 Hz, 60 Hz, 120 Hz Pin-programmable PGA Gain: 1, 8, 64, 128 Pin-programmable power-down and reset

ad7191

Abstract: tare ADR421 AD7191BRUZ
Contextual Info: Pin-Programmable, Ultralow Noise, 24-Bit, Sigma-Delta ADC for Bridge Sensors AD7191 FEATURES GENERAL DESCRIPTION Pin-programmable output rate Output data rate: 10 Hz, 50 Hz, 60 Hz, 120 Hz Pin-programmable PGA Gain: 1, 8, 64, 128 Pin-programmable power-down and reset

Contextual Info: W3EG72126S-D3 -JD3 -AJD3 White Electronic Designs PRELIMINARY* 1GB-128Mx72 DDR SDRAM REGISTERED ECC w/PLL FEATURES DESCRIPTION Double-data-rate architecture The W3EG72126S is a 128Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of eighteen 128Mx4

lt 8232

Abstract: lt 6229 lt 7209 lt 8219 lt 6029 CSR13H106K LT 7242 lt 8224 lt 8217 LT 8215
Contextual Info: I C S R 13 M IL -C -3 9 0 0 3 /0 1 MallorY Solid Tantalum Capacitors GENERAL SPECIFICATIONS H erm etically Sealed G raded Failure Rates O perating Tem perature: -55°C to +125°C (W ith proper derating) Voltage Range: 6 to 1 0 0 W V D C @ 85°C Reverse Voltage (non-continuous):

c01 ic memory tv

Abstract: OD034
Contextual Info: FUJITSU MICROELECTRONICS 7fl D E | 37417^2 0003402 7 3 7 4 9 7 6 2 FUJIT SU M I C R O E L E C T R ON I C S F U JIT S U 78Ç 03402 T-46-23-12 MB 8128-10 MB 8128-15 M 0 S % 1 6 3 8 4 -:b IT : ? X S T A T I C 4R A Ñ D 0 M r# ACCESS ~ M EMORY^ 16384-BIT STATIC RANDOM ACCESS MEMORY WITH

Contextual Info: Pin-Programmable, Ultralow Noise, 24-Bit, Sigma-Delta ADC for Bridge Sensors AD7191 FEATURES GENERAL DESCRIPTION Pin-programmable output rate Output data rate: 10 Hz, 50 Hz, 60 Hz, 120 Hz Pin-programmable PGA Gain: 1, 8, 64, 128 Pin-programmable power-down and reset

k206

Abstract: 2J105K J155K 2sc 1203 ru 94vo
Contextual Info: specifically designedfor snubbera high currentapplications » HIGH CURRENT CARRYING CAPABILITY • THREE STANDARO CONFIGURATIONS ■ THREE MOUNTING METHODS ■ LOW ESR AND ESL ■ COMPACT DESIGN The 5MP2 SERIES is unque because of the combination o f p h ysica l and e le c tric a l c a p a b ilitie s it o ffe rs.

Contextual Info: In te rco n n e ctio n S yste m s S ele ction Guide Military Specified Circular Connectors 82750 Revised 7 -9 5 MIL-C-5015 These p roblem s initiated the d e ve lo p m e n t of a high reliability co n n e cto r to replace the existing M IL-C -5015 solder ty p e connector.

e1414

Abstract: siemens master drive circuit diagram L1152B siemens sda
Contextual Info: SIEMENS Nonvolatile Memory 1-Kbit E2PROM with PC Bus Interface SDA 2516 MOSIC Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 128 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)

Contextual Info: SIEMENS Nonvolatile Memory 8-Kbit E2PROM with I2C Bus and Write Protection SDA 3586-5 MOS 1C Features • Word-organized programmable nonvolatile memory in n-channel floating-gate technology E2PROM • 1024 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (l2C Bus)

Contextual Info: SIEMENS Nonvolatile Memory 4-Kbit E2PROM with I 2C Bus Interface SDA 2546 MOS 1C Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 512 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)

siemens master drive circuit diagram

Abstract: 9221 st tgl 4977 Q67100-H3260 Q67100-H5101 SDA2586 siemens sda2586 UEBOI276 CI 4583
Contextual Info: SIEMENS «easbos a a a s i a a 771 Nonvolatile Memory 8-Kbit E2PROM with I 2C Bus Interface SDA 2586 MOS 1C Features • Word-organized, reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 1024 x 8-bit organization • Supply voltage 5 V