285-2 MAG IC Search Results

transistor WT6

Abstract: transistor WT6 45 transistor WT6 Equivalent WT6 transistor 651-220K pin configuration of ic 1496
Contextual Info: MwT-6 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y if 50f| • • • • • • 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 900 MICRON GATE WIDTH CHOICE OF CHIP AND ONE

lg 5528

Contextual Info: MwT-6 GaAs FET DEVICE PRELIMINARY M IC R O W A V E TECHNOLOGY MICROWAVE 4268Solar Way; Fremont,. CA 94538 415-651-6700 FAX 415-651-2208 TECHNOLOGY 37E D blSMlüQ GQDGÜ3S S MRUV FEATURES • 0.3 MICRON REFRACTORY METAL/GOLD GATE • AIR BRIDGE TECHNOLOGY • DIAMOND-UKE CARBON DLC PASSIVATION

Contextual Info: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET DESCRIPTION The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transm itter applications for X, Kuband microwave communication systems.

TGS 822

Contextual Info: MwT-16 M ic r o w a v e • • • • • • 26 GHz High Power GaAs FET techno lo g y 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 900 MICRON GATE WIDTH DIAMOND-LIKE CARBON PASSIVATION

fujitsu power amplifier GHz

Contextual Info: FMM5010VF GaAs MMIC FEATURES • • • • • High O utput Power: 21.0dBm typ. High Linear Gain: 25dB (typ.) Low In/Out VSW R Impedance M atched Zin/Zout = 50Q Small Herm etic M etal-C eram ic Package (VF) DESCRIPTION The FM M 5010VF is a pow er am plifier designed for VSAT applications

Contextual Info: M w T -1 6 26 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y rr • • • • • • 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METALVGOLD GATE 900 MICRON GATE WIDTH DIAMOND-UKE CARBON PASSIVATION

Contextual Info: M ic r o w a v e T e c h n o l o g y • • • • • • 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAL/GOLD GATE 900 MICRON GATE WIDTH DIAMOND-LIKE CARBON PASSIVATION DESCRIPTION T he M w T -16 is a G aA s M E S F E T de vice w h o se nom inal q u a rte r-m icro n gate length and 900 m icron gate w idth m ake it ideally

Contextual Info: $ k \ rs m M ic r o w a v e T e c h n o l o g y • • • • • MwT-H16 32 GHz High Power AIGaAs/lnGaAs PHEMT 28 dBm POWER OUTPUT AT 12 GHz 11 dB GAIN AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 900 MICRON GATE WIDTH DIAMOND-LIKE CARBON PASSIVATION

transistor NEC B 617

Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR ¿¿PA803T NPN SILICON EPITAXIALTRANSISTO R WITH BUILT-IN 2 ELEMENTS M INI MOLD ¿¡PA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAWINGS (U n it: m m ) FEATURES •

4435 power ic

Abstract: transistor NEC B 617 IC 4435 NEC silicon epitaxial power transistor 1694 NEC B 536 nec b 536 transistor NEC B 617 gh 312 NPN transistor mhz s-parameter 2SC3357
Contextual Info: PRELIMINARY DATA SHEET Silicon Transistor 2SC5336 NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • • PACKAGE DIMENSIONS High gain 2 | S21 | = 12 dB TYP, @f = 1 GHz, VCE = 10 V, Ic = 20 mA New power mini-mold package version of a 4-pin type

Contextual Info: W J - A 7 - 2 1 S M A 7 - 2 10 to 250 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE: 2.2 dB TYP. HIGH OUTPUT POWER: +19 dBm (TYP.) HIGH THIRD ORDER IP: +35 dBm (TYP.) LOW DC CURRENT: 25 mA (TYP.) @ +15 Vdc Outline Drawings

Contextual Info: SIEMENS CFY 35 GaAs FET Features • Low noise • High gain • Fo r lo w -noise front end am plifiers • Fo r D B S dow n co nverters 5:1 E S D : E le c tro sta tic d is c h a rg e se n sitive de v ice , o b se rv e handling pre ca utio ns! Type Marking

NEC Ga FET marking Rf

Abstract: nec gaas fet marking
Contextual Info: DATA SHEET GaAs MES FET NE76184B L to X BAND OSC N-CHANNEL GaAs MES FET DESCRIPTION N E76184B is a N-channel GaAs MES FET housed in ce­ ram ic package. The device is fabricated by ion im plantation for im proved RF and DC perform ance reliability and uniform ity.

NEC JAPAN 282 110 01

Abstract: NEC 2561 TYP 513 309 2SC4570 2SC4570-T1 2SC4570-T2 date sheet ic 7483 marking 929 922 nec 5261
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4570 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the

AT60570

Abstract: at-60570 Silicon Bipolar Transistor AVANTEK transistor AVANTEK oscillator
Contextual Info: AVANTEK INC 20E D • 0AVANTEK HMlIfab QQGbSlb AT-60570 Up to 6 GHz Low Noise Silicon Bipolar Transistor 4 - Avantek 70 m il Package Features • • Low Bias Current O peration: Low Noise Figure: 1.8 dB typ ical at 2.0 G Hz 2.8 dB typ ical at 4.0 G Hz •

Contextual Info: MwT-12 GaAs FET DEVICE PRELIMINARY J \/IlC R O W A V E T E C H N O L O G Y 4268 Solar Way Fremont, CA 94538 415-651-6700 FAX 415-651-2208 I MICROWAVE TECHNOLOGY _ _ I_ 37E D • 1,124100 OOOOQbB T B I M R U V T ta |-76- f— j • — »» IS'a' — -300- 1-81-1

MwT-671

Abstract: LQD 421 MWT671HP lsoj
Contextual Info: MwT-6 18 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y 4m * • • • • • • Units in pun 4-50-fc 70 0.5 WATT POWER OUTPUT AT 12 GHz +39 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METALVGOLD GATE 900 MICRON GATE WIDTH

ic 7483 pin configuration

Abstract: T 427 transistor TYP 513 309 2SC4570 ts 1683 nec 5261
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA803T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD µPA803T has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 • High fT 1.25±0.1 6

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the

Contextual Info: " 2225-K Martin Avenue, Santa Clara, CA 95050 FAX 1 COM PONENTS 408 492-1400 (408) 492-1500 Outline Drawings ) AC272 Low Noise Figure . High Output Level .

nec 2532

Abstract: NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. in millimeters • Low Noise, High Gain

Contextual Info: GENERAL PURPOSE GaAs MESFET FEATURES NE76100 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 3 V, Ids = 10 mA LOW NOISE FIGURE: N F = 0.8 d B ty p ic a l at f = 4 G H z m "O HIGH ASSO CIATED GAIN: G a = 12.0 d B ty p ic a l at f = 4 G H z o z p T3 < Li_

CT 1975 sam

Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the