28C256 Search Results

EEPROM 28C256

Contextual Info: 28C256 Timer E2 256K Electrically Erasable PROM October 1989 Description Features • ■ CMOS Technology L o w Power • 60 m A A ctive - 150 fjA Standby ■ Page Write Mode • 64 Byte Page • 160 us Average Byte W rite Time ■ Byte Write Mode ■ Write Cycle Com pletion Indication

Contextual Info: MODULES M28C010 Timer E 2 1024K Electrically Erasable PROM October 1989 Description Features • SEEQ's MM28C010 is a CMOS 5V only, 128Kx 8 Elec­ trically Erasable Programmable Read Only Memory EEPROM . The MM28C010 consists o f4 28C256 (32K x 8) CMOS EEPROMs and a 2 to 4 line decoder in LCC

d2803

Abstract: 32K x 8-Bit EEPROM
Contextual Info: 28C256T 256K EEPROM 32K x 8-Bit EEPROM DATA INPUTS/OUTPUT I/O0 - I/O7 VCC GND OE WE OE, CE, and WE LOGIC CE Y DECODER ADDRESS INPUTS DATA LATCH INPUT/OUTPUT BUFFERS Y-GATING CELL MATRIX X DECODER IDENTIFICATION Logic Diagram DESCRIPTION: • RAD-PAK radiation-hardened against natural space radiation

28C256APC-2

Abstract: hex55
Contextual Info: Turbo IC, Inc. 28C256A HIGH SPEED CMOS 256K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 32K X 8 BIT EEPROM FEATURES: • 120 ns Access Time • Automatic Page Write Operation Internal Control Timer Internal Data and Address Latches for 64 Bytes • Fast Write Cycle Times

ST 28C256

Contextual Info: 28C256 Timer E 2 2 5 6 K Electrically Erasable P R O M October 1989 Features Description • ■ CMOS Technology Low Power • 60 mA Active • 150 pA Standby ■ Page Write Mode • 64 Byte Page • 160 us Average Byte Write Time ■ ■ Byte Write Mode SEEQ's 28C 256 is a C M OS 5 V only, 32K x 8 Electrically

28C256 seeq

Abstract: EEPROM 28C256 seeq 28C256
Contextual Info: 28C256 Technology, Incorporated Timer E2 256K Electrically Erasable PROM August 1992 Features Military, Extended and Commercial Temperature Range • -5 5 °C to +125° C Operation Military . -4 0 ° C to +85°C Operation (Extended) • 0°C to +70°C Operation (Commercial)

EEPROM 28C256

Abstract: 28C256 28C256-200 28c255 28C256 seeq 28C256-250 28C256-350
Contextual Info: 28C256 Technology, Incorporated Timer E 2 256K Electrically Erasable PROM August 1992 Features • Military, Extended and Commercial Temperature Range • —55°C to +125° C Operation Military • -4 0 ° C to +85°C Operation (Extended) >0°C to +70°C Operation (Commercial)

28C256B

Abstract: EEPROM 28C256 28C256 microchip
Contextual Info: & 28C256 M ic r o c h ip 256K 32K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • High Speed Performance - 90, 120, 150, 200, 250ns Access Time • CMOS Technology for Low Power Dissipation - 70mA A ctive - 150nA Standby • Fast W rite Cycle Times

27C32

Abstract: 24c04 Atmel 27c301 atmel 24c02 39SF040 24C08 ATMEL dataman s4 27C101 Xicor 28256 eeprom 2864a
Contextual Info: Dataman S4 Programmer Device Support List Library Version 2.84 May 2001 8 Bit EPROMS, EEPROMS & Flash ROMS AMD 27010 2716B 2732B 27C010 27C100 27C512L 27HB010 28C256 28F256 29F002NBB 29F040 9716 9864-25 27128 27256 27512 27C020 27C128 27C64 2817A 28F010 28F512

Contextual Info: 11E » SEEÛ TECHNOLOGY INC • a i n S 3 3 QQOEbTÔ fl MODULES M28C010 Timer E 2 1024K Electrically Erasable PROM October 1989 Description Features SEEQ's MM28C010 is a CMOS 5 V only, 128Kx8Electrically Erasable Programmable Read Only Memory EEPROM . The MM28C010 consists o f4 28C256 (32K

atmel 811

Abstract: ROM 28C256 microchip ATMEL 350 Seeq 28C256 28C256 atmel 28C256 Intel 28C256-120 28C256-12 28C256-15
Contextual Info: - I l l - 28C2 56 X ít « 28C256-12 28C256-120 28C256-15 28C256-20 28C256-25 28C256-250 28C256-300 28C256-350 28C256-70 28C256-90 28C256-90 28C256A-150 28C256A-200 28C256A-250 28C256AH-150 28C256AH-200 28C256AH-250 28C256H-120 28C256H- 70 28C256H-90 28F256-170P1C2

Contextual Info: 28C256T 256K EEPROM 32K x 8-Bit EEPROM DATA INPUTS/OUTPUTS I/O0 - I/O7 VCC GND OE WE OE, CE, and WE LOGIC CE Y DECODER ADDRESS INPUTS DATA LATCH INPUT/OUTPUT BUFFERS Y-GATING CELL MATRIX X DECODER IDENTIFICATION Logic Diagram DESCRIPTION: • RAD-PAK radiation-hardened against natural space radiation

YMB 24

Abstract: 28C256ERP f2807
Contextual Info: 32K X 8 EEPROM SPACE ELECTRONICS INC. 28C256ERP SPACE PRODUCTS GROUP A14 1 28 VCC A12 2 27 WE A7 3 26 A13 A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE A0 10 19 I/O7 I/O0 11 18 I/O6 I/O1 12 17 I/O5 I/O3 13 16 I/O4 GND 14 15 I/O3 SEi 28C256ERP

Contextual Info: 28C256A Technology, Incorporated 256K High Speed EEPROM August 1992 FEATURES • ■ M ilitary, Range • -5 5 ° C • —40° C • 0 ° C to ■ Data Protection Extended a n d Com m ercial Temperature • Hardware: Power Up/Down Protection Circuitry • JEDEC Approved Software Write Protection

2SC256K

Abstract: 28C256K
Contextual Info: 28C256K Timer E 2 2 5 6 K Electrically Erasable P R O M October 1989 Description Features • CM O S Technology ■ Lo w P ow er • 60 mA A ctive • 150 fiA S tandby ■ Page W rite M ode • • ■ ■ SEEQ's 28C256K is a CMOS 5V only, 32Kx 8 Electrically

28C256TRP-120

Abstract: 28C256TRP-150
Contextual Info: SPACE ELECTRONICS INC. 256K-BIT EEPROM - 32K X 8 EEPROM SPACE PRODUCTS 28C256TRP A14 1 28 VCC A12 2 27 WE VCC A7 3 26 A13 GND A6 4 25 A8 A5 5 24 A9 A4 6 23 A11 A3 7 22 OE A2 8 21 A10 A1 9 20 CE A0 10 19 I/O 7 I/O 0 11 18 I/O 6 I/O 1 12 17 I/O 5 I/O 2 13 16

EEPROM 28C256

Abstract: 7b9729 1C0302 28C040 28C256 82307 28C256 atmel 4b23 6D9708 6C9638
Contextual Info: PAGE 1 OF 10 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-28C256 CMOS EEPROM RELIABILITY DATA -150°C DYNAMIC OPERATING LIFE TEST -CYCLE TEST -200°C RETENTION BAKE -125°C DYNAMIC OPERATING LIFE TEST (PLASTIC) -150°C RETENTION BAKE (PLASTIC)

28c256k

Contextual Info: 28C256K Timer E2 256K Electrically Erasable PROM October 1989 Description Features • ■ CMOS Technology Low Power • 60m A Active • 150 ijA Standby ■ Page Write Mode • 64 Byte Page • 160f/s Average Byte Write Time ■ Byte Write Mode ■ SEEO's 28C256Kis a CMOS 5Vonly, 32Kx 8 Electrically

5555 is 6 pin smd ic

Abstract: A14A smd smd A14A
Contextual Info: 28C256A Technology, Incorporated 256K High Speed EEPROM August 1992 FEATURES • ■ H igh S peed • 150 n s ec M axim um A ccess Time ■ L o w P ow er C M O S Technology • 8 0 m A A ctive C urrent • 35 0 fjA S tan db y Current ■ Fast W rite C ycle Times

Contextual Info: 28C256 3 2Kx8 Electrically Erasable PROM 28C256 ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • 5-V only operation Military temperature range available Low-power CMOS - 60 mA active current - 1 mA standby current • • • - 1 0 0 pA power-down current

AT28C256

Contextual Info: 28C256 Features • • • • • • • • • • • Fast Read Access T im e -1 5 0 ns Automatic Page W rite Operation Internal Address and Data Latches for 64 Bytes Internal Control Timer Fast W rite Cycle Times Page W rite Cycle Time: 3.0 ms o r 10 ms maximum

Contextual Info: 28C256 256K-Bit CMOS E2PROM FEATURES • Fast Read Access Times: 120/150/200/250 ns ■ Automatic Page Write Operation: -1 to 64 Bytes in 5ms -P a g e Load Tim er ■ Low Power CMOS Dissipation: -A ctive: 30 mA Max. -S tan d b y: 150 jiA Max. ■ End of Write Detection:

80C31 MICROCONTROLLER development board ATMEL

Abstract: Z280 MPU 28C64 EPROM programmer D935G 82C55 NEC 80C198 PSD813 free circuit Dvd eprom programmer PSD4235 80c320
Contextual Info: TM EasyFLASH FLASH PSDS Detailed Presentation on Flash Based PSD Products Note: We recommend viewing Presentation #2 prior to viewing this presentation Presentation #3 EasyFLASHTM 200004flashpsddetail 1 Available Presentations • Main Presentations (Recommended):

28C16 atmel

Abstract: at28c16 eeprom AT28C16E at28c16 atmel 530 eeprom AT28C16
Contextual Info: Features • Fast Read Access Time - 150 ns • Fast Byte Write - 200 µs or 1 ms • Self-Timed Byte Write Cycle • • • • • • • – Internal Address and Data Latches – Internal Control Timer – Automatic Clear Before Write Direct Microprocessor Control