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    28C64A Search Results

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    28C64A Price and Stock

    Rochester Electronics LLC 28C64A-20B-UC

    IC EEPROM 64KBIT PARALLEL
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    DigiKey 28C64A-20B-UC Bulk 15
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    Rochester Electronics LLC 28C64A-25B-YA

    IC EEPROM 64KBIT PARALLEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 28C64A-25B-YA Bulk 16
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    Rochester Electronics LLC 28C64A-25B-UC

    IC EEPROM 64KBIT PARALLEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 28C64A-25B-UC Bulk 16
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    Rochester Electronics LLC 28C64AX-20B-XA

    IC EEPROM 64KBIT PARALLEL
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    DigiKey 28C64AX-20B-XA Bulk 16
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    Rochester Electronics LLC 28C64AX-15B-UC

    IC EEPROM 64KBIT PARALLEL
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    DigiKey 28C64AX-15B-UC Bulk 14
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    28C64A Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    28C64A Microchip Technology 64K (8Kx8) CMOS EPROM Original PDF
    28C64A Microchip Technology 64K (8K x 8) CMOS EEPROM Original PDF
    28C64A Microchip Technology 64K (8K x 8) CMOS EEPROM Original PDF
    28C64A Microchip Technology 64K (8K x 8) CMOS EEPROM Original PDF
    28C64A Turbo IC High Speed CMOS 64K EEPROM Original PDF
    28C64A Microchip Technology 64K CMOS EEPROM Scan PDF
    28C64A-15 Microchip Technology 64K (8K x 8) CMOS EEPROM Original PDF
    28C64A-15B/UA Microchip Technology 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64A-15B/UB Microchip Technology 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64A-15B/UC Microchip Technology 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64A-15/BUC Microchip Technology 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64A-15B/WX Microchip Technology 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64A-15B/XA Microchip Technology 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64A-15/BXA Microchip Technology 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64A-15B/XB Microchip Technology 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64A-15B/XC Microchip Technology 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64A-15B/XX Microchip Technology 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64A-15B/ZX Microchip Technology 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64A-15I/J Microchip Technology 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    28C64A-15I/K Microchip Technology 64K (8K x 8) CMOS Electrically Erasable PROM Scan PDF
    ...

    28C64A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    200B

    Abstract: 28C64A 28C64A-15 28C64A-20 28C64A-25 DK-2750 RG41
    Text: 28C64A 64K 8K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 A12 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 21 I/O6 16 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4 I/O3


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    PDF 28C64A Time--150 Time--200 200B 28C64A 28C64A-15 28C64A-20 28C64A-25 DK-2750 RG41

    28C64A

    Abstract: 28C64A-15 28C64A-20 28C64A-25
    Text: Obsolete Device 28C64A 64K 8K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 A12 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 21 I/O6 16 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13


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    PDF 28C64A Time--150 Time--200 yea35-882 D-85737 NL-5152 28C64A 28C64A-15 28C64A-20 28C64A-25

    Untitled

    Abstract: No abstract text available
    Text: 28C64A 64K 8K x 8 CMOS EEPROM 30 NC 2 RDY/BSY 1 NU 32 Vcc 31 WE 4 A7 3 A12 29 A8 28 A9 27 A11 26 NC 25 OE 24 A10 23 CE 22 I/O7 20 19 18 17 21 I/O6 16 Vcc WE NC A8 A6 5 A9 A5 6 A11 A4 7 A3 8 OE A10 A2 9 A1 10 CE A0 11 I/O7 NC 12 I/O6 I/O0 13 I/O5 I/O4 I/O3


    Original
    PDF 28C64A Time--150 Time--200 28-pin 32-pin DS11125I-page

    28C64AP

    Abstract: 28C64A 28C64APC-2 hex55 ROM 8K x 8
    Text: Turbo IC, Inc. 28C64A HIGH SPEED CMOS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM FEATURES: • 120 ns Access Time • Automatic Page Write Operation Internal Control Timer Internal Data and Address Latches for 64 Bytes • Fast Write Cycle Times


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    PDF 28C64A 28C64AP 28C64A 28C64APC-2 hex55 ROM 8K x 8

    28C64A-15

    Abstract: 28C64A ic 8870 ttl
    Text: 28C64A 64K 8K x 8 CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K nonvolatile electrically Erasable PROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external components. During a “byte write”, the


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    PDF 28C64A 28C64A DS11109G-page 28C64A-15 ic 8870 ttl

    Untitled

    Abstract: No abstract text available
    Text: GENERAL INSTRUMENT PREUOMilDNIÂIRlY D 1 N IF O M Â T D O IM 28C64A 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES PIN CONFIGURATION • High Performance CMOS Technology for Low Power Dissipation — 100 /uA Standby — 30 mA Active ■ Fast 1-ms Byte Write Time


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    PDF 28C64A Ac496-0844; DS11109A-8

    2BC64

    Abstract: No abstract text available
    Text: 28C64A & DICE FORM M ic r o c h ip 64K 8K x 8 CMOS Electrically Erasable PROM D IE C O N F IG U R A TIO N FEATURES Die Size: 134 x 206 sq. mils n (O w Tf n Q § Q O 9 | • 250ns Access Time • CMOS Technology for Low Power Dissipation cm T- o — 30m A Active


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    PDF 28C64A 250ns DS11135A-6 2BC64

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    Abstract: No abstract text available
    Text: JÊ Ë Ê È L * & 28C64A M ig z r o n c h ip i 64K 8K x 8 CMOS EEPROM PACKAGE TYPES FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |^A Standby • Fast Byte W rite Time— 200 |^s or 1 ms


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    PDF 28-pin 32-pin DS111251-page

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    Abstract: No abstract text available
    Text: 28C64A M icro ch ip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation —30mA Active — 100|iA Standby • Fast Byte Write Time— 200|js or 1ms • Data Retention >10 years


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    PDF 28C64A 150ns DS11109D-7 28C64AF 200jxs 11109D-8

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    Abstract: No abstract text available
    Text: 28C64A/KM28C65A CMOS EEPROM 8 K x 8 Bit C M O S Electrically Erasable P R O M FEATURES GENERAL DESCRIPTION • Operating Tem perature Range — K M 28C64A/65A: Com mercial — KM 28C 64A I/65A I: Industrial • S im ple Byte W rite & Page W rite — Single TTL Level W rite Signal


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    PDF KM28C64A/KM28C65A 28C64A/65A: I/65A 28C65A) 64-Byte 150ns 00f/Aâ

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    Abstract: No abstract text available
    Text: Military 28C64A Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150 ns Maximum • C M O S Technology for Low Power Dissipation — 30 mA Active — 100 |iA Standby • Fast Byte Write Time— 200 us or 1 ms


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    PDF 28C64A DS60003A-8

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    Abstract: No abstract text available
    Text: 28C64A PR O D UC T PREVIEW 64 High Speed CMOS K Electrically Erasable PROM October 1989 Block Diagram Features • ■ ■ ■ High Speed: 90, 120, 150 ns Access Times ROW ADDRESS LATCHES Commercial and Military Temperature Ranges CMOS Technology Low Power


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    PDF 28C64A 28C64A

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    Abstract: No abstract text available
    Text: 3890002 GENL mCROCHIP $ TECHNOLOGY I NS T R / INC GENERAL INSTRUMENT 83D MICROCHIP A3 D 28C64A 03412 bl03SGl 0GD341S D T-M q-i3~27 1 I P B i y H D I i M I R V O lN lF Û IR tl T D Û IN l 64K (8K x 8 CMOS ElectricaUy Erasable PROM FEATURES • High Performance CMOS Technology for Low


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    PDF bl03SGl 0GD341S 28C64A DS11109A-8

    28C64A

    Abstract: A12C HA11
    Text: 28C64A Microchip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns • CMOS Technology for Low Power Dissipation — 30mA Active — 10OjiA Standby • Fast Byte Write Time— 200ns or 1ms • Data Retention >10 years


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    PDF 28C64A 150ns 200ns 28-pin 32-piny DS11109E-page 28C64AF 150nsec 28C64A A12C HA11

    26c64

    Abstract: 26C64A *26C64
    Text: a 28C64A M ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |iA Standby • Fast Byte Write Time—200 (is or 1 ms • Data Retention >10 years • High Endurance - Minimum 104 Erase/Write Cycles


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    PDF 28C64A Time--200 S11109F-page 26c64 26C64A *26C64

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    Abstract: No abstract text available
    Text: M 28C64A ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES -40°C to +85°C DESCRIPTION The Microchip Technology Inc. 28C64A is a CMOS 64K non­ volatile etectricaly Erasable PROM. The 28C64A is accessed ike a static RAM for the read orwrite cycles without


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    PDF 28C64A Time--200 DS111091-page 28C64A 8x20mm

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    Abstract: No abstract text available
    Text: M 28C64A ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES PACKAGE TYPE • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte Write Time— 200 jxs or 1 ms • Data Retention >10 years


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    PDF 28C64A 28-pin DS11109F-page Q01B421

    Untitled

    Abstract: No abstract text available
    Text: $ 28C64A M ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES BLOCK DIAGRAM • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100nA Standby • Fast Byte Write Time—200 (is or 1 ms • Data Retention >10 years


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    PDF 28C64A 100nA 28-pin 28-Lead, 44-Lead, 10x10mm) bl03201 001DS11 DS00049E

    Untitled

    Abstract: No abstract text available
    Text: 28C64A M ic r o c h ip 64K 8K x 8 CMOS EEPROM • Fast Read Access Time—150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 n-A Standby • Fast Byte Write Time—200 us or 1 ms • Data Retention >200 years • High Endurance - Minimum 100,000 Erase/Write


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    PDF 28C64A 28-pin 32-pin DS11109G-I

    28C64A

    Abstract: 28C64A-15 28C64A-20 28C64A-25 MS-011
    Text: 28C64A 64K 8K x 8 CMOS EEPROM PACKAGE TYPES FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte W rite Time— 200 us or 1 ms • Data Retention >200 years • High Endurance - Minimum 100,000 Erase/Write


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    PDF 28C64A 28-pin 32-pin MS-016AE DS00049M-page 28C64A 28C64A-15 28C64A-20 28C64A-25 MS-011

    28C64A

    Abstract: A12C
    Text: M 28C64A ic r o c h ip 64K 8K x 8 CMOS EEPROM FEATURES PACKAGE TYPE • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |iA Standby • Fast Byte Write Time—200 (is or 1 ms • Data Retention >10 years


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    PDF 28-pin 32-pin 28C64A A12C

    KM28C64A20

    Abstract: KM28C64A-20
    Text: 28C64A/KM28C65A CMOS EEPROM 8 K /8 Bit CMOS Electrically Erasable PROM FEATURES GENERAL DESCRIPTION • Operating Tem perature Range — K M 28C64A/65A: Com mercial — KM 28C 64A I/65A I: Industrial • Sim ple Byte W rite & Page W rite — Single TTL Level W rite Signal


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    PDF KM28C64A/KM28C65A 28C64A/65A: I/65A 28C65A) 64-Byte 150ns 1555H KM28C64A20 KM28C64A-20

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    Abstract: No abstract text available
    Text: t>3E D • bl03201 D0D7540 Mflñ IMCHP MICROCHIP TECHNOLOGY INC 28C64A Q M icrochip 64K 8K x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns • CMOS Technology for Low Power Dissipation —30mA Active — 100mA Standby


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    PDF bl03201 D0D7540 28C64A 150ns 100mA 200ns DS11109E-page 28C64AF

    Untitled

    Abstract: No abstract text available
    Text: M ic r o c h ip 28C64A 64K 8K x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |xA Standby • Fast Byte Write Time— 200 us or 1 ms • Data Retention >200 years • High Endurance - Minimum 100,000 Erase/Write


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    PDF 28C64A 28-pin 32-pin 28C64A 8x20mm DS11109H-page