28FEB14 Search Results

74BJ3

Contextual Info: RF-13 Rev 28FEB14 GRF7H–4–0500–1–CA3–S–73SP1 (5,00 mm) .197" 75Ω HYBRID MICRO-MINI RF CABLE SPECIFICATIONS For complete specifications see www.samtec.com?GRF7H-C High performance 30 AWG RG 179 coax cable Mates with: GRF7-J, MCX7, MMCX7, SMB7H, DIN7A, BNC7T

smd diode a7

Contextual Info: SFH628A, SFH6286 www.vishay.com Vishay Semiconductors Optocoupler, Phototransistor Output, AC Input, Low Input Current FEATURES • High common mode interference immunity • Isolation test voltage, 5300 VRMS • Low coupling capacitance 1 A/C 1 4 C C/A 2

PAD Pattern

Abstract: MLP66-40L
Contextual Info: PAD Pattern www.vishay.com Vishay Siliconix Recommended Land Pattern PowerPAK MLP66-40L 2.200 0.100 0.100 0.200 0.276 0.025 0.025 0.100 1 1 40 40 0.100 0.100 0.310 0.320 0.100 1.700 2.600 0.100 0.100 0.600 0.276 2.200 0.100 4.600 0.100 All Dimensions are in milimeters

Contextual Info: VS-MBRB1035-M3, VS-MBRB1045-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 10 A FEATURES • • • • • Base cathode 2 3 Anode 1 D2PAK N/C • • • • PRODUCT SUMMARY IF AV 10 A VR 35 V, 45 V VF at IF 0.57 V IRM 15 mA at 125 °C

Contextual Info: SiC781CD www.vishay.com Vishay Siliconix 50 A, VRPower Integrated Power Stage DESCRIPTION FEATURES The SiC781 is an integrated power stage solution optimized for synchronous buck applications to offer high current, high efficiency and high power density performance. Packaged

Contextual Info: VS-MBRB15.CT-M3, VS-MBR15.CT-1-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 7.5 A D2PAK FEATURES TO-262 • 150 °C TJ operation • Center tap TO-220 package • Low forward voltage drop • High frequency operation • High purity, high temperature epoxy

Contextual Info: VS-6TQ35S-M3, VS-6TQ40S-M3,VS-6TQ45S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 6 A FEATURES Base cathode 2 • 175 °C TJ operation • High frequency operation • Low forward voltage drop D2PAK • High purity, high temperature epoxy

Contextual Info: 115101-19-XX.XX NOTES: REVISIONS DRAWING NO. 1. MATERIALS AND FINISHES: BNC CRIMP PLUG - P/N: 112116 CABLE RG-58 COAXIAL CABLE REV DESCRIPTION A THIRD ANGLE PROJ. RELEASE TO MFG. B DATE ECO APPR 12-Mar-14 2705 MB 30-Nov-10 SEE SHEET 1 - KR 2. ELECTRICAL:

Contextual Info: 115101-01-XX.XX NOTES: REVISIONS DRAWING NO. 1. MATERIALS AND FINISHES: REV A THIRD ANGLE PROJ. BNC CRIMP PLUG - P/N: 112132 CABLE RG-316 COAXIAL CABLE DESCRIPTION RELEASE TO MFG. B DATE ECO APPR 04-Mar-14 2705 MB/BCG 11-Nov-10 SEE SHEET 1 - KR 2. ELECTRICAL:

Contextual Info: VS-47CTQ020S-M3, VS-47CTQ020-1-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A D2PAK TO-262 FEATURES • 150 °C TJ operation • Center tap configuration • Optimized for 3.3 V application • Ultralow forward voltage drop

Contextual Info: VS-43CTQ.S-M3, VS-43CTQ.-1-M3 Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A D2PAK FEATURES TO-262 • 175 °C TJ operation • Center tap configuration • Low forward voltage drop Base common cathode 2 • High purity, high temperature epoxy

Contextual Info: VS-47CTQ020S-M3, VS-47CTQ020-1-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A D2PAK TO-262 FEATURES • 150 °C TJ operation • Center tap configuration • Optimized for 3.3 V application • Ultralow forward voltage drop

Contextual Info: SQ4470EY www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V 0.012 RDS(on) () at VGS = 6 V 0.014 ID (A) • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested

Contextual Info: VS-43CTQ.S-M3, VS-43CTQ.-1-M3 Series www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A D2PAK FEATURES TO-262 • 175 °C TJ operation • Center tap configuration • Low forward voltage drop Base common cathode 2 • High purity, high temperature epoxy

Contextual Info: VS-48CTQ060S-M3, VS-48CTQ060-1-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifiers, 2 x 20 A D2PAK FEATURES TO-262 • 150 °C TJ operation • Center tap configuration • Low forward voltage drop • High frequency operation Base

Contextual Info: VS-6TQ35S-M3, VS-6TQ40S-M3,VS-6TQ45S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 6 A FEATURES Base cathode 2 • 175 °C TJ operation • High frequency operation • Low forward voltage drop D2PAK • High purity, high temperature epoxy

Contextual Info: VS-8TQ080S-M3, VS-8TQ100S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 8 A FEATURES Base cathode 2 • • • • 3 Anode 1 D2PAK 175 °C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy

Contextual Info: SiC781CD www.vishay.com Vishay Siliconix 50 A, VRPower Integrated Power Stage DESCRIPTION FEATURES The SiC781 is an integrated power stage solution optimized for synchronous buck applications to offer high current, high efficiency and high power density performance. Packaged

Contextual Info: SiC788, SiC788A www.vishay.com Vishay Siliconix 50 A VRPower Integrated Power Stage DESCRIPTION FEATURES The SiC788 and SiC788A are integrated power stage solutions optimized for synchronous buck applications to offer high current, high efficiency, and high power

Contextual Info: VS-8TQ080S-M3, VS-8TQ100S-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 8 A FEATURES Base cathode 2 • • • • 3 Anode 1 D2PAK 175 °C TJ operation Low forward voltage drop High frequency operation High purity, high temperature epoxy

Contextual Info: VS-MBRB1035-M3, VS-MBRB1045-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 10 A FEATURES • • • • • Base cathode 2 3 Anode 1 D2PAK N/C • • • • PRODUCT SUMMARY IF AV 10 A VR 35 V, 45 V VF at IF 0.57 V IRM 15 mA at 125 °C

Contextual Info: AZ23-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes, Dual FEATURES • Dual silicon planar Zener diodes, common anode 1 2 • The Zener voltages are graded according to the international E24 standard. Standard Zener voltage tolerance is ± 5 %, indicated by the “C”

AN840

Contextual Info: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN840 “The Next Step" for Failure Analysis of Vishay Siliconix Power MOSFET By Kandarp Pandya These guidelines chronologically cover most pertinent aspects and information for a proficient and valuable failure

Contextual Info: 115101-20-XX.XX NOTES: 1. MATERIALS AND FINISHES: BNC CRIMP PLUG - P/N: 112119 CABLE RG-59 COAXIAL CABLE 2. 3. DRAWING NO. REVISIONS REV DESCRIPTION A THIRD ANGLE PROJ. RELEASE TO MFG. B ELECTRICAL: A. IMPEDANCE: 75 OHM, NOMINAL B. FREQUENCY RANGE: DC-4.0 GHz