28AUG00 Search Results

Si6475DQ

Contextual Info: Si6475DQ New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.011 @ VGS = –4.5 V –10 –12 12 0.0135 @ VGS = –2.5 V –9 0.017 @ VGS = –1.8 V –8 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6475DQ

114-18063

Abstract: 114-18063-1 LZM E1 1-967642-1 114-18061 114-18063-13 RBT-GF10 108-18272
Contextual Info: 7 CO PYRIG H T 1996 BY AMP R E L E A S E D FOR P U B L IC A T IO N F R E I FU E R V E R O E F F E N T L I CHUNG A LL R IG H T S R E S E R V E D . INCO RPORATED. A L LE R E IC H T E V O RBEH A LTEN . , 19-. Ï ï 6 MATED W ITH : PA SSEN D ZU: ï 4 5 CODING

Si3915DV

Contextual Info: Si3915DV New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.120 @ VGS = –4.5 V –2.5 0.175 @ VGS = –2.5 V –2.0 0.240 @ VGS = –1.8 V –1.7 S1 S2 TSOP-6 Top View G1 1 6 D1 S2 2 5 S1 G2

71307

Contextual Info: Si4852DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) rDS(on) (W) 30 ID (A) 0.0120 @ VGS = 10 V 11 0.0175 @ VGS = 4.5 V 9.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30 0.53 V @ 3 A

01884

Abstract: SUB85N08-08 SUP85N08-08
Contextual Info: SUP/SUB85N08-08 New Product Vishay Siliconix N-Channel 75-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.008 @ VGS = 10 V 85 a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N08-08 Top View SUP85N08-08 N-Channel MOSFET

BDS813

Abstract: 745495-2 HDE-20 QQ-S-698 bds81
Contextual Info: 6 7 DRAWING THIS MADE IN DRAWING THIRD 15 ANGLE UNPUBLI5HED COPYRIGHT 5 3 4 PROJECTION RELEASED 19 BY AMP FOR PUBLICATION I NCORPORATED. ALL I NTERNATI ONAL RIGHTS DI ST LOC 19 48 BD RESERVED. REV I 5 I0 N 5 ZONE D REDRAWN E RL5E F REVISED PER ECN G REV

Contextual Info: 1 8 THIS DRAWING 6 & COPYRIGHT UNPUBLISHED. - RELEASED FOR PUBLICATION B f TYCO ELECTRONICS CORPORATION. IOC ALL RIGHTS RESERVED. FT □1ST REVISIONS 64 LTR w RECEPTACLE ACCEPTS A .0 0 8 -.0 1 4 T H IC K I.C. DESCRIPTION REV PER OG3C-0214-99 TU B E A TWO . 0 0 0 0 3 0 MIN T H K . GOLD ST RIP E S IN CONT ACT AR EA WITH T I N - L E A D

Contextual Info: Si1501DL New Product Vishay Siliconix Dual N- and P-Channel "20-V D-S Low-Threshold MOSFET PRODUCT SUMMARY Channel VDS (V) N-Channel 20 P-Channel –20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V

Contextual Info: Si1906DL New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PC XX YY S1 Lot Traceability and Date Code

Contextual Info: Sil 901 DL_ Vishay Siliconix New Product P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS(V) r D S (on) ( Q ) Id (mA) 3.8 e VGS = -4 .5 V -1 8 0 5.0 0 V GS = - 2 5 V -1 0 0 -2 0 SOT-363 SC-70 (6-Leads) S, [ 7 Gn [ F nr Marking Code

Si1906DL

Contextual Info: Si1906DL New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code PC XX YY S1 Lot Traceability and Date Code

Contextual Info: Si3915DV New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.120 @ VGS = –4.5 V –2.5 0.175 @ VGS = –2.5 V –2.0 0.240 @ VGS = –1.8 V –1.7 S1 S2 TSOP-6 Top View G1 1 6 D1 S2 2 5 S1 G2

Si1901DL

Abstract: D234
Contextual Info: Si1901DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QD XX YY S1 Lot Traceability

Si3915DV

Abstract: 5A6V
Contextual Info: Si3915DV New Product Vishay Siliconix Dual P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.120 @ VGS = –4.5 V –2.5 0.175 @ VGS = –2.5 V –2.0 0.240 @ VGS = –1.8 V –1.7 S1 S2 TSOP-6 Top View G1 1 6 D1 S2 2 5 S1 G2

SUB85N08-08

Abstract: SUP85N08-08
Contextual Info: SUP/SUB85N08-08 New Product Vishay Siliconix N-Channel 75-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.008 @ VGS = 10 V 85 a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N08-08 Top View SUP85N08-08 N-Channel MOSFET

Si1901DL

Abstract: vishay siliconix code marking
Contextual Info: Si1901DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QD XX YY S1 Lot Traceability

7130-1

Abstract: 71301 a ns3015
Contextual Info: Si1300DL New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 SOT-323 SC-70 (3-Leads) Marking Code 1 3 S KC D XX YY G Lot Traceability and Date Code 2 Part # Code

Contextual Info: SUP/SUB85N08-08 New Product Vishay Siliconix N-Channel 75-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.008 @ VGS = 10 V 85 a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N08-08 Top View SUP85N08-08 N-Channel MOSFET

diode marking L5 sot363

Abstract: VISHAY diode MARKING er VISHAY SOT LOT CODE marking L5 sot363 sot363 ON Marking DS vishay siliconix code marking
Contextual Info: _ SM906DL Vishay Siliconix New Product N-Channel 20-V D-S MOSFET PRODUCT SUMMARY r DS<on) (Œ ) lD (mA) 2.0 9 V q s = 4.5 V 250 2.5 V GS = 2.5 V 150 V DS(V) 20 SOT-363 S C-70 (6*Leads) Marking Code XX £ Lot Traceability

7130-1

Abstract: Si1300DL
Contextual Info: Si1300DL New Product Vishay Siliconix N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 2.5 @ VGS = 2.5 V 150 SOT-323 SC-70 (3-Leads) Marking Code 1 3 S KC D XX YY G Lot Traceability and Date Code 2 Part # Code

Contextual Info: Si1901DL New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (mA) 3.8 @ VGS = –4.5 V –180 5.0 @ VGS = –2.5 V –100 SOT-363 SC-70 (6-Leads) 1 6 D1 G1 2 5 G2 D2 3 4 S2 Marking Code QD XX YY S1 Lot Traceability

7130-1 transistor

Abstract: TRANSISTOR mosfet SD 1074 marking code LG Si1301 RU4 diode SM035X
Contextual Info: SM035X_ Vishay Siliconix New Product Complementary N- and P-Channel 20-V D-S MOSFET TrenchFET PRODUCT SUMMARY M O SFETs V d s (V ) N-Channel P-Channel 20 -20 FEATURES rDS(on) ( ß ) lD (m A ) 5 @ VGs = 4.5 V 200

7130-1

Abstract: vishay siliconix code marking
Contextual Info: _ SÌ1300PL Vishay Siliconix New Product N-Channel 20-V D-S MOSFET PRODUCT SUMMARY rDS<on) (Q) Iq (mA) 2.0 9 VGS = 4.5 V 250 2.5 @ VGS = 2 5 V 150 VDS(V) 20 Marking Code KC XXI Lot Traceability and Date Code ABSOLUTE MAXIMUM RATINGS (Ta = 2S C UNLESS OTHERWISE NOTED)

A109

Abstract: HDE-20 MIL-T-10727
Contextual Info: 7 DRAWI NG THIS MADE IN DRAWI NG THIRD 15 ANGLE UNPUBLI5HED COPYRIGHT 5 6 3 4 2 PROJECTION RELEASED 19 BY AMP F OR PUBLICATION INCORPORATED. ALL INTERNATIONAL RIGHTS DI S T LOC 19 GP RESERVED. 00 REV I 5 I0N5 ZONE LTR E TYP . 1 25 DIA 1 09 T Y P 1I3 17