28AUG2009 Search Results
28AUG2009 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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m955
Abstract: M9551 M95512-DF
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M95512-W M95512-R M95512-DR M95512-DF 512-Kbit M95512-W M95512DR M95512-DF 200-year m955 M9551 | |
ED26 diode
Abstract: TMS320DA SPRU233 ed13 diode ED21 DIODE ed28 diode
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SM320C6713-EP SGUS049I SM320C6713-EP SM320C6713B-EP SGUS049I ED26 diode TMS320DA SPRU233 ed13 diode ED21 DIODE ed28 diode | |
Contextual Info: Alle Rechte vorbehalfen/ Ml rights restrrei 2 3 4 5 6 20,1 16,6 31 max . A 1,2 5,52 | 0 .05 02,1 -0.05 n S ! J 1 CM ro IL 3,85 2,89. 16, 5 PCB Layout, component side (thickness 1.6 mm min. _ Mating face acccording to CECC 75301-802 1— !- O O.IO All contacts |
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28Aug2009 UJan2010 EC01215 EC00775 81-2-A 09551563619J41 | |
MAR105
Abstract: MAR105 wireless panasonic rf b300 manual 817C datasheet 817c g 817c c6416 tcp example code EMU10 AC97 C6416
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SM320C6414-EP, SM320C6415-EP, SM320C6416-EP SGUS043D 500-MHz 32-Bit C62xTM C6414/15/16 TMS320C64xTM MAR105 MAR105 wireless panasonic rf b300 manual 817C datasheet 817c g 817c c6416 tcp example code EMU10 AC97 C6416 | |
Contextual Info: M95512-W M95512-R M95512-DR M95512-DF 512-Kbit serial SPI bus EEPROM Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 512 Kb (64 Kbytes) of EEPROM – Page size: 128 bytes SO8 (MN) 150 mil width |
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M95512-W M95512-R M95512-DR M95512-DF 512-Kbit M95512-W M95512-R M95512DR | |
Contextual Info: MJE802 NPN power Darlington transistor Features . • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application 3 ■ Linear and switching industrial equipment 2 1 SOT-32 |
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MJE802 OT-32 | |
400M
Abstract: 82365SL PCI7420 PCI7620 PCI7X20 28 bit rfid card
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PCI7620/PCI7420 SLLA252 1394a-2000 PC2001 1394a-2000 400M 82365SL PCI7420 PCI7620 PCI7X20 28 bit rfid card | |
MJE802
Abstract: ST DARLINGTON TRANSISTOR
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MJE802 OT-32 MJE802 ST DARLINGTON TRANSISTOR | |
M95512 diagram
Abstract: M95512-DR M95512-W M95512 M95512-R
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M95512-DR M95512-R M95512-W M95512-W M95512-R: M95512-DR: M95512 diagram M95512-DR M95512 | |
Contextual Info: application INFO available UCC1800/1/2/3/4/5 UCC2800/1/2/3/4/5 UCC3800/1/2/3/4/5 Low-Power BiCMOS Current-Mode PWM FEATURES DESCRIPTION • 100µA Typical Starting Supply Current The UCC1800/1/2/3/4/5 family of high-speed, low-power integrated circuits contain all of the control and drive components required for off-line |
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UCC1800/1/2/3/4/5 UCC2800/1/2/3/4/5 UCC3800/1/2/3/4/5 UC3842 UC3842A UCCx800 UCCx801 UCCx802 UCCx803 UCCx804 | |
Contextual Info: Alle Rechte vorbehalten/ M l rights reserved 2 A 3 4 5 6 CM 31,09 max. CO oo in m m 3,85 2,55 oo 16,6 PCB Layout, component side thickness 1.6 mm min. 2,76 Mat i ng f ace a c c o r d i n g t o CECC 75301-802 Unremovabl e screwlocks — to -1- dT— |
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EC02316 30Aug2010 26Nov2009 EC00775 28Aug2009 11Jan2010 | |
Contextual Info: UC1842AĆEP, UC1843AĆEP, UC1844AĆEP, UC1845AĆEP CURRENTĆMODE PWM CONTROLLER SGLS134C − SEPTEMBER 2002 − REVISED FEBRUARY 2006 D Controlled Baseline D D D D D D D D D D D D D D D D − One Assembly/Test Site, One Fabrication Site Extended Temperature Performance of |
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UC1842AÄ UC1843AÄ UC1844AÄ UC1845AÄ SGLS134C | |
Contextual Info: r 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 4 2 3 RELEASED FOR PUBLICATION LOC DIST R E V IS IO N S ALL RIGHTS RESERVED. By - LTR L4 DESCRIPTION REVISED PER DATE DWN RK HMR 11 MAR 11 ECO-11-004820 APVD MATERIALS AND FINISH HOUSING: PA 6 - 6 , UL 94-VO, COLOR: GREEN. |
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94-VO, E60677. 28AUG2009 | |
Contextual Info: Alle Rechte vorbehalfen/ Ml rights restrrei 2 3 1 ,0 9 max. - A 3 -t=»- csj co 4 5 6 x o E oo H— l i _1_ H— 1r □ [D □ ro y=L j= y Mat i ng f ace a c c o r d i n g t o CECC 75301-802 2,76 PCB L a y o u t , component s i d e t h i c k n e s s 1. 6 mm mi n. |
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28Aug2009 EC01215 EC00775 81-2-A ECD1118 E100775 26Nov2009 | |
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M95512
Abstract: M95512-DR M95512-R M95512-W
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M95512-DR M95512-R M95512-W 40-year M95512 M95512-DR M95512-W | |
smd p23
Abstract: smd transistor P23 transistor SMD p23 QFN20 TS2012 TS2012IQT CONNECTOR P4 TOP STMicroelectronics P24
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AN2725 TS2012 STEVAL-CCA007V1 TS2012. TS2012 smd p23 smd transistor P23 transistor SMD p23 QFN20 TS2012IQT CONNECTOR P4 TOP STMicroelectronics P24 | |
dm365 isif program
Abstract: dm365 ipipe dm365 hdvicp DM365 dm365 isif register Camera ISIF lens distortion DM365 layout guidelines DDR GIO48 DDR2 layout DM365
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TMS320DM365 SPRS457A TMS320DM365 601/BT 656/BT 8-/16-Bit) 8-/16-bit 24-Bit dm365 isif program dm365 ipipe dm365 hdvicp DM365 dm365 isif register Camera ISIF lens distortion DM365 layout guidelines DDR GIO48 DDR2 layout DM365 | |
ADC10DTC0Contextual Info: MSP430F41x2 MIXED SIGNAL MICROCONTROLLER SLAS648A - APRIL 2009 - REVISED JUNE 2009 D Low Supply-Voltage Range, 1.8 V to 3.6 V D Ultralow Power Consumption Active Mode: 220 µA at 1 MHz, 2.2 V Standby Mode: 0.9 µA Off Mode RAM Retention : 0.1 µA D Five Power-Saving Modes |
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MSP430F41x2 SLAS648A 16-Bit 125-ns ADC10DTC0 | |
Contextual Info: TPS62230, TPS62231, TPS62232 TPS62233, TPS62234, TPS62238 TPS62239, TPS622310 www.ti.com. SLVS941A – APRIL 2009 – REVISED AUGUST 2009 |
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TPS62230, TPS62231, TPS62232 TPS62233, TPS62234, TPS62238 TPS62239, TPS622310 SLVS941A TPS62230 | |
ED26 diode
Abstract: TMS320C6713 with gpio pin details C00C SM320C6713 SM320C6713B-EP SM320C6713-EP TMS320C6000 C6713 ED21 DIODE diode ED24
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SM320C6713-EP SGUS049I SM320C6713B-EP ED26 diode TMS320C6713 with gpio pin details C00C SM320C6713 SM320C6713B-EP SM320C6713-EP TMS320C6000 C6713 ED21 DIODE diode ED24 | |
mjcp
Abstract: arm 7/9 programming code 132.2 kHz RFID DDR SDRAM HY jpeg decode image NTSC/PAL TO RGB565 RGB666 AC97 AIC12 ARM926EJ-S
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SM320DM355-EP SPRS575 SM320DM355-EP 270-MHz ARM926EJ-S M216EP) 32-Bit 16-Bit 16K-Byte mjcp arm 7/9 programming code 132.2 kHz RFID DDR SDRAM HY jpeg decode image NTSC/PAL TO RGB565 RGB666 AC97 AIC12 | |
Contextual Info: M95512-DF M95512-R M95512-W 512-Kbit serial SPI bus EEPROM Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 512 Kb (64 Kbytes) of EEPROM – Page size: 128 bytes SO8 (MN) 150 mil width |
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M95512-DF M95512-R M95512-W 512-Kbit M95512-R 40-year | |
Contextual Info: MJE802 NPN power Darlington transistor Features . • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application ■ Linear and switching industrial equipment e t e ol Description |
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MJE802 OT-32 | |
Contextual Info: Alle Rechte vorbehalfen/ Ml rights restrrei 2 3 4 5 6 31 max. A Pv H to CM to 3,85 2,89 16,6 Mating face acccording to CECC 75301-802 PCB Layout, component side thickness 1.6 mm min. IQ l £ 7 O. IO 2$ 7,2 All contacts and grounds 4-40 UNC unremovable screwlock |
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28Aug2009 14Jan2010 EC01215 EC00775 81-2-A |