28C04 Search Results

Contextual Info: b3E D blG3BDl D D 0 7 5 n T7Ö I IHCHP niCROCHIP TECHNOLOGY INC & 28C04A Microchip 4K 512 X8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns • CMOS Technology for Low Power Dissipation —30mA Active — 100|jA Standby

Contextual Info: & 28C04A Microchip 4K 512 x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation — 30mA Active — 100|xA Standby • Fast Byte Write Time— 200ns or 1ms • Data Retention >10 years

Contextual Info: 28C04A 4K 512 x 8 CMOS EEPROM 32 Vcc 31 WE 29 A8 6 28 NC 7 27 NC 8 9 10 11 26 NC 25 OE 24 NC 23 CE 20 19 18 17 21 I/O6 15 22 I/O7 13 14 12 • Pin 1 indicator on PLCC on top of package BLOCK DIAGRAM I/O0 DESCRIPTION The Microchip Technology Inc. 28C04A is a CMOS 4K

Contextual Info: $ 28C04A M ic r o c h ip 4K 512 x 8 CMOS EEPROM FEATURES PACKAGETYPES • Fast Read Access Time— 150 ns • C M O S Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte Write Time— 200 us or 1 ms • Data Retention >200 years

Contextual Info: 28C04A M lS « C H iP 4K 512 x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns PACKAGE TYPES DIP • CMOS Technology for Low Power Dissipation - 30 mA Active A7 r • 1 22 H NC A2C 6 A1 I • Data Retention >200 years / AOC 8 IS) 00 O o 4*

Contextual Info: PSTSIIgI EEPROMS M ic r o c h ip Parallel EEPROM Selection Guide CMOS Parallel EEPROMs Access Time ns Icc (Active/ Standby) 4K bits (512x8) 150/200/250 30mA/100nA 16K bits (2K X 8) 150/200/250 30 mAflOO nA Device Density/ Organization 28C04A 28C16A Byte

Contextual Info: 28C04A M ic r o c h ip 4K 512 X 8 CMOS EEPROM PACKAGETYPES FEATURES • Fast Read Access Time— 150 ns DIP • CMOS Technology for Low Power Dissipation - 30 mA Active A7C • 1 24 3 Vcc A6C 2 A5 C 3 23 □ A8 22 3 N C A4 C 4 - 100 nA Standby IO 00 o

tce 1994

Abstract: 28C04A 28C04A-15 28C04A-20 28C04A-25
Contextual Info: 28C04A M ic r o c h ip : 4K 512 x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 |iA Standby • Fast Byte Write Time— 200 us or 1 ms • Data Retention >10 years • Endurance - Minimum 104 Erase/Write Cycles

Contextual Info: Obsolete Device 28C04A 4K 512 x 8 CMOS EEPROM 32 Vcc 31 WE 29 A8 6 28 NC 7 27 NC 8 9 10 11 26 NC 25 OE 24 NC 23 CE 20 19 18 17 21 I/O6 15 22 I/O7 13 14 12 • Pin 1 indicator on PLCC on top of package BLOCK DIAGRAM I/O0 DESCRIPTION The Microchip Technology Inc. 28C04A is a CMOS 4K

28C040

Abstract: 28C256 atmel AT28C040 28c010 28C256 28HC64 MIL-M-38535 5F0280 AT28C010
Contextual Info: PAGE 1 OF 4 ATMEL CORPORATION Tel: 408 441-0311 Fax:(408)436-4200 AT-28C040 EEPROM RELIABILITY DATA* - 125°C OPERATING LIFE TEST - 200°C RETENTION BAKE - CYCLE TEST *. This data is applicable to the following device types due to same technology grouping as

Contextual Info: M ic r o c h ip 28C04A 4K 512 x 8 CMOS EEPROM FEATURES PACKAGETYPE • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation DIP - 30 mA Active - 100 nA Standby A7C • 1 A6Ü 2 A5C 3 A4 E 4 5 6 A 3: A2C • Fast Byte Write Time— 200 fis or 1 ms

12-tz

Abstract: jis f07 X28C010 XM28C040
Contextual Info: X A dvance Inform ation 4 Megabit Module XM 28C040 iE f lr 512K x 8 Bit 5 Volt, Byte Alterable E2PROM TYPICAL FEATURES DESCRIPTION • • • • The 28C040 is a high density 4 Megabit E2PROM comprised of four X28C010's mounted on a co-fired multilayered ceramic substrate. Individual components

Contextual Info: M 28C04A ic r o c h ip 4K 512 x 8 CMOS EEPROM FEATURES DESCRIPTION • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100 pA Standby • Fast Byte Write Time—200 jis or 1 ms • Data Retention >10 years

Contextual Info: & 28C04A Microchip 4K 512 x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum The Microchip Technology Inc 28C04A is a CMOS 4K • CMOS Technology for Low Power Dissipation non-volatile electrically Erasable and Programmable

Contextual Info: & 28C04A M icro ch ip 4K 512 x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns • CMOS Technology for Low Power Dissipation —30mA Active — 10OgA Standby • Fast Byte Write Time— 200ns or 1ms • Data Retention >10 years

Contextual Info: M 28C04A ic r o c h ip 4K 512 x 8 CMOS EEPROM FEATURES DESCRIPTION • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100 (iA Standby • Fast Byte Write Time— 200 us or 1 ms • Data Retention >10 years

Contextual Info: 28C04A 4K 512 x 8 CMOS EEPROM PACKAGE TYPES 32 Vcc 31 WE Vcc A8 NC WE OE NC CE I/O7 I/O6 I/O5 I/O4 I/O3 5 29 A8 6 28 NC 7 27 NC 28C04A 8 9 10 11 26 NC 25 OE 24 NC 23 CE 20 19 18 21 I/O6 17 22 I/O7 13 15 12 14 A6 A5 A4 A3 A2 A1 A0 NC I/O0 2 NC 1 NU PLCC 24

28C04A

Abstract: 28C04A-15 28C04A-20 28C04A-25
Contextual Info: / M i c r o c h 28C04A i p 4K 512 x 8 CMOS EEPROM FEATURES PACKAGETYPES • Fast R ead A c c e s s T im e — 1 50 ns O ' A7 r • 1 24 - 3 0 m A A ctive - 100 jiA S ta n d b y A 5Ü 3 A 4C 4 22 H N C • D a ta R eten tio n > 2 0 0 ye ars A 2Ü 6 AIT 7

Contextual Info: 28C04A M icro chip 4K 512 x 8 CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C04A is a CMOS 4K non-volatile electrically Erasable and Programmable Read Only Memory (EEPROM). The 28C04A is accessed like a static RAM for the read or write cycles without the need of external components. During a

Contextual Info: & 28C04A Microchip 4K 512 X 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation — 30mA Active — 10OnA Standby • Fast Byte Write Time— 200|is or 1 ms • Data Retention >10 years

Contextual Info: $ 28C04A M ic r o c h ip 4K 512 x 8 CMOS EEPROM FEATURES PACKAGETYPE • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation DIP - 30 mA Active - 100 |xA Standby • Fast Byte Write Time— 200 us or 1 ms • Data Retention >10 years

28C04

Contextual Info: GENERAL INSTRUMENT 28C04 PRELIMINARY INFORMATION O f 4K 512 X 8 CMOS Electrically Erasable PROM ile S 006048 C ^ L . FEATURES PIN CONFIGURATION Top View A7 □ •1 W 24 H Vcc A6 C 2 23 □ A8 A5 C 3 22 □ NC A4 [2 4 21 □ WË A3 □ 5 20 □ SË A2 6

Contextual Info: 28C04A 4K 512 x 8 CMOS EEPROM 2 NC 1 NU 29 A8 6 28 NC 7 27 NC 8 9 10 11 26 NC 25 OE 24 NC 23 CE 20 19 18 17 21 I/O6 15 22 I/O7 13 14 12 • Pin 1 indicator on PLCC on top of package BLOCK DIAGRAM I/O0 DESCRIPTION The Microchip Technology Inc. 28C04A is a CMOS 4K

TC 3162

Contextual Info: /M i c r o c h 28C04A i p 4K 512 x 8 CMOS EEPROM FEATURES • Fast Read Access Tim e— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 jiA Standby • Fast Byte W rite Tim e— 200 us or 1 ms • Data Retention >200 years • Endurance - Minimum 104 Erase/W rite Cycles