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    Microchip Technology Inc 28C04A-25/L

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    Microchip Technology Inc 28C04A-25/P

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    Quest Components 28C04A-25/P 4
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    28C04A Datasheets (123)

    Part ECAD Model Manufacturer Description Curated Type PDF
    28C04A Microchip Technology 4K (512x8) CMOS EPROM Original PDF
    28C04A Microchip Technology 4K (512 x 8) CMOS EEPROM Original PDF
    28C04A Microchip Technology 4K (512 x 8) CMOS EEPROM Original PDF
    28C04A-15 Microchip Technology 512K x 8 CMOS EEPROM Memory Scan PDF
    28C04A-15E/J Microchip Technology 4K (512 x 8) CMOS EEPROM Original PDF
    28C04A-15E/K Microchip Technology 4K (512 x 8) CMOS EEPROM Original PDF
    28C04A-15E/L Microchip Technology 4K (512 x 8) CMOS EEPROM Original PDF
    28C04A-15E/P Microchip Technology 4K (512 x 8) CMOS EEPROM Original PDF
    28C04A-15I/J Microchip Technology 4K (512 x 8) CMOS EEPROM Original PDF
    28C04A-15I/K Microchip Technology 4K (512 x 8) CMOS EEPROM Original PDF
    28C04A-15I/L Microchip Technology 4K (512x8) CMOS EEPROM Original PDF
    28C04A-15I/P Microchip Technology 4K (512x8) CMOS EEPROM Original PDF
    28C04A-15/J Microchip Technology 4K (512 x 8) CMOS EEPROM Original PDF
    28C04A-15/K Microchip Technology 4K (512 x 8) CMOS EEPROM Original PDF
    28C04A-15/L Microchip Technology 4K (512x8) CMOS EEPROM Original PDF
    28C04A-15/P Microchip Technology 4K (512x8) CMOS EEPROM Original PDF
    28C04A15/P General Semiconductor 4K (512 x 8) CMOS Electrically Erasable PROM Scan PDF
    28C04A-20 Microchip Technology 512K x 8 CMOS EEPROM Memory Scan PDF
    28C04A-20E/J Microchip Technology 4K (512 x 8) CMOS EEPROM Original PDF
    28C04A-20E/K Microchip Technology 4K (512 x 8) CMOS EEPROM Original PDF
    ...

    28C04A Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: 28C04A 4K 512 x 8 CMOS EEPROM 32 Vcc 31 WE 29 A8 6 28 NC 7 27 NC 8 9 10 11 26 NC 25 OE 24 NC 23 CE 20 19 18 17 21 I/O6 15 22 I/O7 13 14 12 • Pin 1 indicator on PLCC on top of package BLOCK DIAGRAM I/O0 DESCRIPTION The Microchip Technology Inc. 28C04A is a CMOS 4K


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    PDF 28C04A Time--150 Time--200 512x8 24-pin 32-pin

    Untitled

    Abstract: No abstract text available
    Text: Obsolete Device 28C04A 4K 512 x 8 CMOS EEPROM 32 Vcc 31 WE 29 A8 6 28 NC 7 27 NC 8 9 10 11 26 NC 25 OE 24 NC 23 CE 20 19 18 17 21 I/O6 15 22 I/O7 13 14 12 • Pin 1 indicator on PLCC on top of package BLOCK DIAGRAM I/O0 DESCRIPTION The Microchip Technology Inc. 28C04A is a CMOS 4K


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    PDF 28C04A 28C04A wil82 D-85737 NL-5152

    Untitled

    Abstract: No abstract text available
    Text: 28C04A 4K 512 x 8 CMOS EEPROM DIP A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 VSS 24 23 22 21 20 19 18 17 16 15 14 13 •1 2 3 4 5 6 7 8 9 10 11 12 30 NC 32 Vcc 31 WE 5 29 A8 6 28 NC 7 27 NC 26 NC 8 28C04A 9 25 OE 20 21 I/O6 19 22 I/O7 13 18 23 CE 12 17 24 NC


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    PDF 28C04A 28C04A DS11126E-page

    Untitled

    Abstract: No abstract text available
    Text: 28C04A 4K 512 x 8 CMOS EEPROM PACKAGE TYPES 32 Vcc 31 WE Vcc A8 NC WE OE NC CE I/O7 I/O6 I/O5 I/O4 I/O3 5 29 A8 6 28 NC 7 27 NC 28C04A 8 9 10 11 26 NC 25 OE 24 NC 23 CE 20 19 18 21 I/O6 17 22 I/O7 13 15 12 14 A6 A5 A4 A3 A2 A1 A0 NC I/O0 2 NC 1 NU PLCC 24


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    PDF 28C04A Time--150 Time--200 DS11126F-page

    Untitled

    Abstract: No abstract text available
    Text: 28C04A 4K 512 x 8 CMOS EEPROM 2 NC 1 NU 29 A8 6 28 NC 7 27 NC 8 9 10 11 26 NC 25 OE 24 NC 23 CE 20 19 18 17 21 I/O6 15 22 I/O7 13 14 12 • Pin 1 indicator on PLCC on top of package BLOCK DIAGRAM I/O0 DESCRIPTION The Microchip Technology Inc. 28C04A is a CMOS 4K


    Original
    PDF 28C04A Time--150 Time--200 512x8 24-pin 32-pin DS11126G-page

    28C04A

    Abstract: 28C04A-15 28C04A-20 28C04A-25
    Text: 28C04A 4K 512 x 8 CMOS EEPROM 32 Vcc 31 WE 29 A8 6 28 NC 7 27 NC 8 9 10 11 26 NC 25 OE 24 NC 23 CE 20 19 18 17 21 I/O6 15 22 I/O7 13 14 12 • Pin 1 indicator on PLCC on top of package BLOCK DIAGRAM I/O0 DESCRIPTION The Microchip Technology Inc. 28C04A is a CMOS 4K


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    PDF 28C04A 28C04A 11126G-page 600mill) DS11126G-page 28C04A-15 28C04A-20 28C04A-25

    palce16v8 programming algorithm

    Abstract: PH29EE010 ATMEL 620 93c46 EPROM NMC27C512AQ atmel 130 24c02 EP320I gal16v8 stag orbit 32 device list ph29ee010-xx gal16v8 programming
    Text: Datum 18.11.1998 aus www.stagusa.com Orbit 48 Device Support List Version 25.0 Note ALL PLDs require Orbit 48 PLD Module Please consult device specific information at the end of this list. Stag Programmers Ltd. Silver Court, Watchmead, Welwyn Garden City, Herts AL7 1LT, U.K.


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    PDF PALCE29M16H-XX PALCE29MA16H-XX PALLV22V10/Z PALCE16V8H/Q/Z-XX PALLV16V8/Z-XX PALLV16V8Z-XX PALCE16V8HD-XX PALCE16V8 palce16v8 programming algorithm PH29EE010 ATMEL 620 93c46 EPROM NMC27C512AQ atmel 130 24c02 EP320I gal16v8 stag orbit 32 device list ph29ee010-xx gal16v8 programming

    Device-List

    Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
    Text: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which


    Original
    PDF ALL-11 Z86E73 Z86E83 Z89371 ADP-Z89371/-PL Z8E000 ADP-Z8E001 Z8E001 Device-List cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2

    Untitled

    Abstract: No abstract text available
    Text: b3E D blG3BDl D D 0 7 5 n T7Ö I IHCHP niCROCHIP TECHNOLOGY INC & 28C04A Microchip 4K 512 X8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns • CMOS Technology for Low Power Dissipation —30mA Active — 100|jA Standby


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    PDF 28C04A 150ns 512x8 bl03201 DS11126C-page 200ns

    Untitled

    Abstract: No abstract text available
    Text: & 28C04A Microchip 4K 512 x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation — 30mA Active — 100|xA Standby • Fast Byte Write Time— 200ns or 1ms • Data Retention >10 years


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    PDF 28C04A 150ns 200ns 512x8 DS11126B-6 200ns DS11126B-8

    Untitled

    Abstract: No abstract text available
    Text: $ 28C04A M ic r o c h ip 4K 512 x 8 CMOS EEPROM FEATURES PACKAGETYPES • Fast Read Access Time— 150 ns • C M O S Technology for Low Power Dissipation - 30 mA Active - 100 nA Standby • Fast Byte Write Time— 200 us or 1 ms • Data Retention >200 years


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    PDF 28C04A 512x8 24-pin 32-pin DS11126G-page7-6 DS11126G-page 28C04A

    Untitled

    Abstract: No abstract text available
    Text: 28C04A M lS « C H iP 4K 512 x 8 CMOS EEPROM FEATURES • Fast Read Access Time— 150 ns PACKAGE TYPES DIP • CMOS Technology for Low Power Dissipation - 30 mA Active A7 r • 1 22 H NC A2C 6 A1 I • Data Retention >200 years / AOC 8 IS) 00 O o 4*


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    PDF 28C04A

    Untitled

    Abstract: No abstract text available
    Text: PSTSIIgI EEPROMS M ic r o c h ip Parallel EEPROM Selection Guide CMOS Parallel EEPROMs Access Time ns Icc (Active/ Standby) 4K bits (512x8) 150/200/250 30mA/100nA 16K bits (2K X 8) 150/200/250 30 mAflOO nA Device Density/ Organization 28C04A 28C16A Byte


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    PDF 30mA/100nA A/100 A/100 28C04A 28C16A

    Untitled

    Abstract: No abstract text available
    Text: 28C04A M ic r o c h ip 4K 512 X 8 CMOS EEPROM PACKAGETYPES FEATURES • Fast Read Access Time— 150 ns DIP • CMOS Technology for Low Power Dissipation - 30 mA Active A7C • 1 24 3 Vcc A6C 2 A5 C 3 23 □ A8 22 3 N C A4 C 4 - 100 nA Standby IO 00 o


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    PDF 28C04A DS11126F-page6-7 28C04A 600mill) DS11126F-page

    Untitled

    Abstract: No abstract text available
    Text: M ic r o c h ip 28C04A 4K 512 x 8 CMOS EEPROM FEATURES PACKAGETYPE • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation DIP - 30 mA Active - 100 nA Standby A7C • 1 A6Ü 2 A5C 3 A4 E 4 5 6 A 3: A2C • Fast Byte Write Time— 200 fis or 1 ms


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    PDF 28C04A 1/01C bl03501 GQ1S40D DS11126D-page

    Untitled

    Abstract: No abstract text available
    Text: M 28C04A ic r o c h ip 4K 512 x 8 CMOS EEPROM FEATURES DESCRIPTION • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100 pA Standby • Fast Byte Write Time—200 jis or 1 ms • Data Retention >10 years


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    PDF 28C04A 28C04A DS11126D-page 512x8

    Untitled

    Abstract: No abstract text available
    Text: & 28C04A Microchip 4K 512 x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum The Microchip Technology Inc 28C04A is a CMOS 4K • CMOS Technology for Low Power Dissipation non-volatile electrically Erasable and Programmable


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    PDF 28C04A 150ns 200ns 512x8 DS11126A-6 28C04AF 200ns DS11126A-8

    Untitled

    Abstract: No abstract text available
    Text: & 28C04A M icro ch ip 4K 512 x 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns • CMOS Technology for Low Power Dissipation —30mA Active — 10OgA Standby • Fast Byte Write Time— 200ns or 1ms • Data Retention >10 years


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    PDF 28C04A 150ns 10OgA 200ns 512x8 24-pin 32-pin DS11126C-page 28C04A

    Untitled

    Abstract: No abstract text available
    Text: M 28C04A ic r o c h ip 4K 512 x 8 CMOS EEPROM FEATURES DESCRIPTION • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation — 30 mA Active — 100 (iA Standby • Fast Byte Write Time— 200 us or 1 ms • Data Retention >10 years


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    PDF 28C04A 512x8 24-pin 32-pin DS111260-page blG32Gl 0G10343 28C04A

    28C04A

    Abstract: 28C04A-15 28C04A-20 28C04A-25
    Text: / M i c r o c h 28C04A i p 4K 512 x 8 CMOS EEPROM FEATURES PACKAGETYPES • Fast R ead A c c e s s T im e — 1 50 ns O ' A7 r • 1 24 - 3 0 m A A ctive - 100 jiA S ta n d b y A 5Ü 3 A 4C 4 22 H N C • D a ta R eten tio n > 2 0 0 ye ars A 2Ü 6 AIT 7


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    PDF 512x8 24-pin 32-pin MS-016AE DS00049M-page 28C04A 28C04A-15 28C04A-20 28C04A-25

    Untitled

    Abstract: No abstract text available
    Text: 28C04A M icro chip 4K 512 x 8 CMOS EEPROM DESCRIPTION The Microchip Technology Inc. 28C04A is a CMOS 4K non-volatile electrically Erasable and Programmable Read Only Memory (EEPROM). The 28C04A is accessed like a static RAM for the read or write cycles without the need of external components. During a


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    PDF 28C04A 28C04A DSl1l26E-page bl03201

    Untitled

    Abstract: No abstract text available
    Text: & 28C04A Microchip 4K 512 X 8 CMOS Electrically Erasable PROM FEATURES DESCRIPTION • Fast Read Access Time— 150ns Maximum • CMOS Technology for Low Power Dissipation — 30mA Active — 10OnA Standby • Fast Byte Write Time— 200|is or 1 ms • Data Retention >10 years


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    PDF 28C04A 150ns 10OnA 28C04A DS11126B-7 200ns DS11126B-8

    Untitled

    Abstract: No abstract text available
    Text: $ 28C04A M ic r o c h ip 4K 512 x 8 CMOS EEPROM FEATURES PACKAGETYPE • Fast Read Access Time— 150 ns • CMOS Technology for Low Power Dissipation DIP - 30 mA Active - 100 |xA Standby • Fast Byte Write Time— 200 us or 1 ms • Data Retention >10 years


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    PDF 28C04A 512x8 24-pin DS11126D-page

    TC 3162

    Abstract: No abstract text available
    Text: /M i c r o c h 28C04A i p 4K 512 x 8 CMOS EEPROM FEATURES • Fast Read Access Tim e— 150 ns • CMOS Technology for Low Power Dissipation - 30 mA Active - 100 jiA Standby • Fast Byte W rite Tim e— 200 us or 1 ms • Data Retention >200 years • Endurance - Minimum 104 Erase/W rite Cycles


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    PDF 28C04A MS-016 DS00049M-page TC 3162