28F020-15 FLASH Search Results

28F020-15 FLASH Result Highlights (5)

Part	Manufacturer	Description
TN28F020-150	Rochester Electronics LLC	28F020 - 256K X 8 Flash
MD28F020-90	Rochester Electronics LLC	28F020 - 2048K (256K x 8) CMOS Flash Memory
TN28F020-90	Rochester Electronics LLC	28F020 - 2048K (256K x 8) CMOS Flash Memory
MD28F020-90/B	Rochester Electronics LLC	28F020 - 2048K (256K x 8) CMOS Flash Memory
MD28F020-12/B	Rochester Electronics LLC	28F020 - 2048K (256K x 8) CMOS Flash Memory

28F020-15 FLASH Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
28F020 Abstract: 80C186 80c186 specification update Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 2 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 4 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g 5% VPP Y High-Performance Read	Original	28F020 2048K 32-Pin 32-Lead AP-325 ER-20 -80V05 28F020 80C186 80c186 specification update	PDF
29F020 Abstract: 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 28F010 80C186 E28F010 N28F010 Contextual Info: E 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 n n n n n n n Flash Electrical Chip-Erase  1-Mbit: 1 Second Typical Chip-Erase  2-Mbit: 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µs Typical Byte-Program  1-Mbit: 1 Second Chip-Program	Original	28F010 28F020 32-Lead P28F010-90 P28F010-120 P28F010-150 TN28F010-90 TN28F010-120 TN28F010-150 TP28F010-90 29F020 28F020 TN28F010 intel 28F010 N28F010-120 N28F020-150 80C186 E28F010 N28F010	PDF
intel 80c186 Abstract: F28F020-90 N28F020-150 28F020 E28F020-150 N28F020-90 80C186 A80C186 intel 28F020 Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY Y Flash Electrical Chip-Erase 2 Second Typical Chip-Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte-Program 4 Second Chip-Program Y 100 000 Erase Program Cycles Y 12 0V g 5% VPP Y High-Performance Read	Original	28F020 2048K 32-Pin 32-Lead ER-28 AP-316 AP-325 ER-20 -80V05 intel 80c186 F28F020-90 N28F020-150 28F020 E28F020-150 N28F020-90 80C186 A80C186 intel 28F020	PDF
TN28F020-150 Abstract: 28F020 80C186 intel 28F020 Contextual Info: E n n n n n n n 28F020 2048K 256K X 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase  2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm  10 µS Typical Byte-Program  4 second Chip-Program n n 100,000 Erase/Program Cycles 12.0 V ±5% VPP	Original	28F020 2048K 32-Lead E28F020-90 N28F020-90 E28F020-120 N28F020-120 E28F020-150 N28F020-150 TN28F020-150 80C186 intel 28F020	PDF
Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase • Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface Quick-Pulse P r o g r a m m i n g Algorithm — 10 fis Typical Byte-Program	OCR Scan	28F020 2048K ER-20, ER-24, AP-316, AP-325 -80V05, RR-60, ER-28,	PDF
PPH 2222 36 Abstract: 29f020 P28F010-150 29020 28F010-150N 28f010 Contextual Info: in te i 5 VOLT BULK ERASE FLASH MEMORY 28F010 and 28F020 x8 Flash Electrical Chip-Erase — 1-Mbit: 1 Second Typical Chip-Erase — 2-Mbit: 2 Second Typical Chip-Erase Command Register Architecture for Microprocessor/Microcontroller Compatible Write Interface	OCR Scan	28F010 28F020 32-Lead 28F010-90 28F010-120 28F010-150 28F020-90 PPH 2222 36 29f020 P28F010-150 29020 28F010-150N	PDF
Contextual Info: 28F020 2048K 256K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 Typical Byte-Program — 4 second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% Vpp ■ High-Performance Read	OCR Scan	28F020 2048K 32-Pin 32-Lead	PDF
28F020T Abstract: intel 28F020 Contextual Info: 28F020 2048K 256K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 pS Typical Byte-Program — 4 second Chip-Program ■ 100,000 Erase/Program Cycles a 12.0 V ±5% V pp ■ High-Performance Read	OCR Scan	28F020 2048K E28F020-90 N28F020-90 E28F020-120 N28F020-120 E28FQ20-150 N28F020-150 TE28F02Q-90 TE28F020-120 28F020T intel 28F020	PDF
P28F020-150 Abstract: 28F020 80C186 E28F020 F28F020 intel 28F020 Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 fis Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp	OCR Scan	28F020 2048K ER-20, ER-24, ER-28, RR-60, AP-316, AP-325 -80V05, -80V05 P28F020-150 28F020 80C186 E28F020 F28F020 intel 28F020	PDF
intel eprom Intelligent algorithm Abstract: 28F020 32-PIN E28F020 F28F020 N28F020 P28F020 intel 28F020 Contextual Info: int ! 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jlls Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % VPP High-Performance Read	OCR Scan	28F020 2048K 28F020 AP-316 AP-325 -80V05, -80V05 intel eprom Intelligent algorithm 32-PIN E28F020 F28F020 N28F020 P28F020 intel 28F020	PDF
i80C186 Abstract: M28F020 29024 Contextual Info: in tj 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp	OCR Scan	28F020 2048K 32-Pin 32-Lead -32-Lead -80V05, -80V05 AP-325 i80C186 M28F020 29024	PDF
intel 28F020 Abstract: flash n28f020 p28f020 28F020 E28F020 F28F020 intel PLD 29024 28f020-150 D28F020 Contextual Info: INTEL CORP ÏÏEMORY /P L D / SbE D • 4f l2 bl 7 b QOTbETl 72^ ■ I T L 2 in t e i 2048K (256K x 8 CMOS FLASH MEMORY ■ Flash Electrical Chlp-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 jLLSTypical Byte-Program	OCR Scan	007L5< 2048K Nonvol020-200 F28F020-150 F28F020-200 TE28F020-90 TF28F020-90 TE28F020-150 TF28F020-150 ER-20, intel 28F020 flash n28f020 p28f020 28F020 E28F020 F28F020 intel PLD 29024 28f020-150 D28F020	PDF
28f020-150 Abstract: 28F020-200 intel 28F020 Contextual Info: in te i, 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Qulck-Pulse P r o g r a m m in g T M Algorithm — 10 jus Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles Typical	OCR Scan	28F020 2048K TE28F020-150 TF28F020-150 TE28F020-90 TF28F020-90 ER-20, ER-24, ER-28, RR-60, 28f020-150 28F020-200 intel 28F020	PDF
IN6AG Abstract: 28F020 intel 28F020 Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp	OCR Scan	28F020 2048K 32-Pin 32-LEAD P28F020-70 N28F020-70 P28F020-90 IN6AG intel 28F020	PDF

SSC16E Abstract: N28F020-200 28F020-150 29024 28F020 intel 28F020 Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Noise Immunity Features — +10% Vcc Tolerance — Maximum Latch-Up Immunity through EPI Processing ■ Quick-Pulse Programming Algorithm — 10 f i s Typical Byte-Program	OCR Scan	28F020 2048K 28F020 32-PIN 32-LEAD P28F020-150 N28F020-150 P28F020-200 SSC16E N28F020-200 28F020-150 29024 intel 28F020	PDF
Contextual Info: in te l 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read	OCR Scan	28F020 2048K AP-316 AP-325 -80V05, -80V05 28F020 4a2bl75 Qlbb077	PDF
Contextual Info: 28F020 2048K 256K X 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 \iS Typical Byte-Program — 4 second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0 V ±5% V pp	OCR Scan	28F020 2048K 32-Lead E28F020-90 E28F020-120 E28F020-150 TE28F020-90 TE28F020-120 TE28F020-150	PDF
Contextual Info: in te i 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jLis Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp • Command Register Architecture for	OCR Scan	28F020 2048K AP-325 -80V05, -80V05 28F020	PDF
Contextual Info: in tj 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash E lectrical C h ip-E rase — 2 S ec o n d T yp ic al C h ip -E rase ■ Q uick-P ulse P ro g ram m in g A lg orith m — 10 jus T yp ic al B y te-P ro g ra m — 4 S ec o n d C h ip -P ro g ram ■	OCR Scan	28F020 2048K 32-Pin -80V05, -80V05	PDF
n28f020-150 Contextual Info: in te i 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 juls Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ±5% VPP High-Performance Read	OCR Scan	28F020 2048K -80V05, -80V05 n28f020-150	PDF
B1560 Abstract: B1560 equivalent 28f020 transistor B1560 294005 B1205 b1770 b439 AP-316 AP-325 Contextual Info: 28F020 2048K 256K x 8 FLASH MEMORY SmartDie Product Specification Y Flash Electrical Chip Erase 2 Second Typical Chip Erase Y Quick-Pulse Programming Algorithm 10 ms Typical Byte Program 4 Second Chip Program Y 100K Erase Program Cycles Typical Y 12 0V g 5% VPP	Original	28F020 2048K 8F020 X28F020-90 ER-20 ER-24 RR-60 AP-316 B1560 B1560 equivalent transistor B1560 294005 B1205 b1770 b439 AP-325	PDF
29C257 Abstract: gang capacitor pin details 27LV020 27c4000 ST 27C1000 29F040A 29C010A Winbond 29EE011 Xicor 28C010 29F020 Contextual Info: file:///AD63.HTM ADSl/63 U c a q ?^ TI o PRODUCT DATA SHEET p AD63 and AD51 Package Converters for E E PROMs and FLASH etc (PLCC) Product Code ¡Pins on skt Pins on Base ¡Wiring Code Package Base pitch" ¡Miscellaneous AD63 i 32 : 32 j 01 P ; .6 j Clamshell	OCR Scan	ADSl/63 ///AD63 27C010, 27C020, 27C040, 27H010, 27LV512, 27LV020, 28F256, 28F512, 29C257 gang capacitor pin details 27LV020 27c4000 ST 27C1000 29F040A 29C010A Winbond 29EE011 Xicor 28C010 29F020	PDF
FLASH TRANSLATION LAYER FTL Abstract: intel 28F010 Contextual Info: PCMCIA Flash Memory Card FLG Series PCMCIA Flash Memory Card 256KILOBYTE through 5 MEGABYTE Intel based Features General Description WEDC’s FLG Series Flash memory cards offer low/medium density linear Flash solid state storage solutions for code and data storage, high performance disk emulation and execute in	Original	256KILOBYTE 256KB 512KB 28F010 28F020 150ns 200ns FLASH TRANSLATION LAYER FTL intel 28F010	PDF
intel 28F010 Contextual Info: PRELIMINARY PCMCIA Flash Memory Card FLG Series PCMCIA Flash Memory Card 256KILOBYTE through 5 MEGABYTE Intel based Features General Description EDI’s FLG Series Flash memory cards offer low/medium density linear Flash solid state storage solutions for code and	Original	256KILOBYTE 28F010 256KB 512KB 28F020 28F010 150ns 200ns intel 28F010	PDF

28F020-15 FLASH Search Results

28F020-15 FLASH Result Highlights (5)

28F020-15 FLASH Datasheets Context Search

28F020

29F020

intel 80c186

TN28F020-150

PPH 2222 36

28F020T

P28F020-150

intel eprom Intelligent algorithm

i80C186

intel 28F020

28f020-150

IN6AG

SSC16E

n28f020-150

B1560

29C257

FLASH TRANSLATION LAYER FTL

intel 28F010