Device-List
Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Text: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which
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ALL-11
Z86E73
Z86E83
Z89371
ADP-Z89371/-PL
Z8E000
ADP-Z8E001
Z8E001
Device-List
cf745 04 p
24LC211
lattice im4a3-32
CF775 MICROCHIP
29F008
im4a3-64
ks24c01
ep320ipc
ALL-11P2
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28F512A
Abstract: TMS28F512A TEXAS INSTRUMENTS TMS28F512A
Text: 28F512A 524288-BIT FLASH MEMORY SMJS514B – FEBRUARY 1994 – REVISED MARCH 1996 D D D D D description The 28F512A Flash memory is a 524 288-bit, programmable read-only memory that can be electrically bulk-erased and reprogrammed. It is available in 10 000 and 1 000 program / erase
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TMS28F512A
524288-BIT
SMJS514B
TMS28F512A
288-bit,
28F512A-10
28F512A-12
28F512A-15
28F512A-17
28F512A
TMS28F512A TEXAS INSTRUMENTS
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Device-List
Abstract: CF775 MICROCHIP 24LC211 ae29F2008 im4a3-32 CNV-PLCC-MPU51 ep320ipc cf745 04 p ALL-11P3 29lv640
Text: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which
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Original
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PDF
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ALL-11
Z8E000
ADP-Z8E001
Z8E001
Z90231
ADP-Z90259-SD
Z90241
ADP-Z90241-SD
Device-List
CF775 MICROCHIP
24LC211
ae29F2008
im4a3-32
CNV-PLCC-MPU51
ep320ipc
cf745 04 p
ALL-11P3
29lv640
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28F512A
Abstract: 28F512A-12
Text: SMJS514C-FEBRUARY 1 Organization. . . 65536 by 8 Bits All Inputs/Outputs TTL-Compatible 28F512A 65536 BY 8-BIT FLASH MEMORY m - REVISED AUGUST 1997 FM PACKAGE TOP VIEW Vgc Tolerance ±10% Maximum Access/Minimum Cycle Time '28F512A-10 100ns ’28F512A-12
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SMJS514C-FEBRUARY
TMS28F512A
28F512A-10
100ns
28F512A-12
120ns
28F512A-15
150ns
28F512A-17
170ns
28F512A
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TMS28F512A TEXAS INSTRUMENTS
Abstract: TMS28F512A
Text: 28F512A 524288-BIT FLASH MEMORY SMJS514B - FEBRUARY 1994 - REVISED MARCH 1996 Organization . . . 64K x 8-Bit Flash Memory All Inputs/Outputs TTL-Compatible Vcc Tolerance ±10% Maximum Access/Minimum Cycle Time 28F512A-10 100 ns ’28F512A-12 120 ns ’28F512A-15
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TMS28F512A
524288-BIT
SMJS514B
28F512A-10
28F512A-12
28F512A-15
28F512A-17
TMS28F512A
288-bit,
TMS28F512A TEXAS INSTRUMENTS
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28F512A
Abstract: AOC121
Text: ►UNDER DEVELOPMENT S-28F512A CMOS 512K-bit FLASH E2PROM The S-28F512A is a 64K-word x 8-bit 5 V single power supply Flash E2PROM. The memory array is divided into 32 sectors 2K-byte each and data is erased in sector units. Applying 12 V to Vpp terminal erases all the data
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S-28F512A
512K-bit
S-28F512A
64K-word
536-word
32-pin
0000h
0001H
28F512A
AOC121
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Untitled
Abstract: No abstract text available
Text: AMDEI Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current
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Am28F020A
32-pin
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Untitled
Abstract: No abstract text available
Text: FINAL A M D ii 28F512A 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access tim e ■ CMOS low power consumption — 30 mA maximum active current
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Am28F512A
32-Pin
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Untitled
Abstract: No abstract text available
Text: F IN A L a A m 28F 512 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 70 ns m aximum access time ■ ■ CMOS Low pow er consum ption Flasherase Electrical Bulk Chip-Erase
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32-Pin
Am28F512
28F5l
Am28F512-75
02S752A
QD32bbS
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Untitled
Abstract: No abstract text available
Text: a P R E L IM IN A R Y Advanced Micro Devices A m 28F 512A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ ■ High perform ance Em bedded Erase Electrical Bulk Chip-Erase — 70 ns maximum access time
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32-Pin
28F512A
2S752Ã
0032fc
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Untitled
Abstract: No abstract text available
Text: FSNAi- AM D3 28F512A 512 Kilobit 64 K X 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ C M O S low power consum ption — 30 mA maximum active current
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Am28F512A
AM28F512A
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Untitled
Abstract: No abstract text available
Text: AMENDMENT AMDB A m 2 8 F 01 0A Data Sheet 1 9 96 Flash P r o d u c t s D ata B o o k / H a n d b o o k INTRODUCTION This amendment supersedes information regarding the Am 28F010A device in the 1996 Flash Products Data Book/Handbook, PI D 11796D. This document includes
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28F010A
11796D.
16778C.
IN3064
16778C-20
16778C-21
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28F512A
Abstract: TMS28F512A TEXAS INSTRUMENTS
Text: 28F512A 65536 BY 8-BIT FLASH MEMORY SMJS514C - FEBRUARY 1994 - REVISED AUGUST 1997 Organization . . . 65536 by 8 Bits All Inputs/Outputs TTL-Compatible Vcc Tolerance ±10% Maximum Access /Minimum Cycle Time ’28F512A-10 100 ns ’28F512A-12 120 ns ’28F512A-15
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TMS28F512A
SMJS514C
28F512A-10
28F512A-12
28F512A-15
28F512A-17
28F512A
TMS28F512A TEXAS INSTRUMENTS
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28f512a
Abstract: GE capacitor 28f TMS28F512A TEXAS INSTRUMENTS
Text: 28F512A 524288-BIT F L A S H M E M O R Y S M JS 514B - FEBRUARY 1 9 9 4 - REVISED MARCH 1996 • O r g an iz a t io n . . . 64K x 8-Bit Flash M e m o r y • All I n p u t s / O u t p u t s T T L - C o m p a t i b l e • V qq Tolerance ±10% PM P A C K A G E
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TMS28F512A
524288-BIT
28FS1
28f512a
GE capacitor 28f
TMS28F512A TEXAS INSTRUMENTS
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Untitled
Abstract: No abstract text available
Text: FINAL A M D ii 28F512A 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access tim e ■ CMOS low power consumption — 30 mA maximum active current
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Am28F512A
32-Pin
TS032â
16-038-TSOP-2
TSR032â
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Untitled
Abstract: No abstract text available
Text: a Am28F512 Advanced Micro Devices 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ ■ — No data retention power consumption
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Am28F512
32-Pin
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29C257
Abstract: gang capacitor pin details 27LV020 27c4000 ST 27C1000 29F040A 29C010A Winbond 29EE011 Xicor 28C010 29F020
Text: file:///AD63.HTM ADSl/63 U c a q ?^ TI o PRODUCT DATA SHEET p AD63 and AD51 Package Converters for E E PROMs and FLASH etc (PLCC) Product Code ¡Pins on skt Pins on Base ¡Wiring Code Package Base pitch" ¡Miscellaneous AD63 i 32 : 32 j 01 P ; .6 j Clamshell
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ADSl/63
///AD63
27C010,
27C020,
27C040,
27H010,
27LV512,
27LV020,
28F256,
28F512,
29C257
gang capacitor pin details
27LV020
27c4000
ST 27C1000
29F040A
29C010A
Winbond 29EE011
Xicor 28C010
29F020
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28f512
Abstract: 27C020 29C257 Winbond 29EE011 AD51 programmer for 29F010 29F040 29f040a 28F010 28F256
Text: AD51/63 f i l e : / / / A D 6 3 .HTM U 'f cl - ? '/ c GDcnp PRODUCT DATA SHEET Lfb^-Ro! t. / ; ; * fc* I *M « 4 . s - AD63 and AD51 Package Converters for E E PROMs and FLASH etc (PLCC) ¡Product C ode ¡Pins on skt Pins on Base ¡W iring C ode ¡Package ;Base pitch” jM iscellaneous i
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AD51/63
///AD63
27C010,
27C020,
27C040,
27H010,
27LV512,
27LV020,
28F256,
28F512,
28f512
27C020
29C257
Winbond 29EE011
AD51
programmer for 29F010
29F040
29f040a
28F010
28F256
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PCb board zd lty 2
Abstract: AM29F200TB AM29F1001 micron sram sram book relay book regulator handbook free transistor equivalent book 2sc PM9006 AM29F0169
Text: Flash Memory Products 1994/1995 Data Book/Handbook Advanced Micro Devices FUTURE ELECTRONICS INC. 5935 Airport Road, Suite 200 Mississauga, Ontario L4V1W5 TEL.: 416 612-9200 FAX: (416) 612-9185 T O L L F R E E 1 -8 0 0 -2 6 8 -7 9 4 8 Flash M e m o ry P ro d u cts
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32-Pin
48-Pin
SR048
PCb board zd lty 2
AM29F200TB
AM29F1001
micron sram
sram book
relay book
regulator handbook
free transistor equivalent book 2sc
PM9006
AM29F0169
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DG33 transistor
Abstract: No abstract text available
Text: A m 2 8 F 5 1 2 A 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ Embedded Erase Electrical Bulk Chip-Erase H igh p e rfo rm a n ce — 70 ns maximum access time
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32-Pin
Am28F512A
DG33 transistor
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Untitled
Abstract: No abstract text available
Text: P R E L IM IN A R Y Am28F256A Advanced Micro Devices 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ High perform ance ■ CM OS low pow er consum ption — 30 m A maximum active current
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Am28F256A
32-pin
28F256A
0D32b3M
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Untitled
Abstract: No abstract text available
Text: AMDÍ1 FINAL Am28F256A 256 Kilobit 32 K X 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access tim es as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current
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Am28F256A
32-Pin
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Untitled
Abstract: No abstract text available
Text: FINAL A M D ii 28F512A 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Mem ory with Embedded Algorithm s DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access tim e ■ CMOS low power consumption — 30 mA maximum active current
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Am28F512A
32-Pin
AM28F512A
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Untitled
Abstract: No abstract text available
Text: 28F512A 524288-BIT FLASH MEMORY SMJS514A - FEBRUARY 1994 - REVISED JUNE 1995 Organization . . . 64K x 8-Blt Flash Memory All Inputs/Outputs TTL Compatible Vcc Tolerance ±10% Maximum Access / Minimum Cycle Time ’28F512A-10 100 ns ’28F512A-12 120 ns
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TMS28F512A
524288-BIT
SMJS514A
28F512A-10
28F512A-12
28F512A-15
28F512A-17
168-Hour
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