GLZ52
Abstract: rotary head FO-55116-C
Text: 11 12 FO-55116-C 10 9 8 7 6 5 2 3 4 1 HONEYWELL PART NUMBER REV DOCUMENT C 0067767 - CHANGED BY MBN CHECK 28JUL10 CMH H H WGL A SPECIALS G G BODY TYPE CODE A EN50041, METAL DIN ENCLOSURE SOFTWARE VERSION CODE 1 VERSION 1 ANTENNA TYPE CODE RF CODE 2.4 GHz;
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FO-55116-C
28JUL10
EN50041,
GLZ52
rotary head
FO-55116-C
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Untitled
Abstract: No abstract text available
Text: TS8542VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 1.066 x 1.066 x 0.17 • Peak wavelength: λ = 850 nm
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TS8542VA
TS8542VA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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sharp laser diodes
Abstract: TSOP855
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book ir receiver modules vishay semiconductors vse-db0090-1010 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0090-1010
sharp laser diodes
TSOP855
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11061
Abstract: SAM3S Microcontroller Series Schematic Check List at91sam3s atmel SAM3S atmel dac adc sam3 arm SAM3S-EK
Text: SAM3S Microcontroller Series Schematic Check List 1. Introduction This Application Note is a schematic review check list for systems embedding Atmel’s SAM3S series of ARM Cortex -M3, Thumb®2-based microcontrollers. It gives requirements concerning the different pin connections that must be considered before starting any new board design and describes the minimum hardware
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1061A
28-Jul-10
11061
SAM3S Microcontroller Series Schematic Check List
at91sam3s
atmel SAM3S
atmel dac adc
sam3 arm
SAM3S-EK
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Untitled
Abstract: No abstract text available
Text: 790D Vishay Sprague Resin-Molded, Radial-Lead Solid Tantalum Capacitors FEATURES • Terminations: Tin/lead SnPb , 100 % tin (Sn) • Four case sizes precisely molded with a flame retardant epoxy resin • Stand off on all case sizes • Available on tape for automatic insertion
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2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SK 10 BAT 065
Abstract: Gate Driver of IRF1404 dpak mosfet motor control DC 12v
Text: Automotive Grade AUIR3330S PROTECTED HIGH FREQUENCY HIGH SIDE SWITCH FOR AUTOMOTIVE DC MOTOR DRIVE Features • Product Summary Rds on @25°C Max current Operating voltage Up to 30Khz PWM switching capability
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AUIR3330S
30Khz
AUIR3330s
28-Jul-11
SK 10 BAT 065
Gate Driver of IRF1404
dpak mosfet motor control DC 12v
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Untitled
Abstract: No abstract text available
Text: RedBox M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 1120 MHz 4.5 VDC 1300 MHz Tuning Voltage: 0.5 Supply Voltage: 4.75 5.0 5.25 VDC Output Power: -3.0 +3.0 dBm Supply Current: 20
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10kHz
100kHz
28-Jul-10
CRBV55BE-1120-1300
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Untitled
Abstract: No abstract text available
Text: VS-10CTQ150S-M3, VS-10CTQ150-1-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 5 A TO-263AB D2PAK FEATURES TO-262AA • 175 °C TJ operation • Center tap configuration • Low forward voltage drop • High frequency operation
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VS-10CTQ150S-M3,
VS-10CTQ150-1-M3
O-263AB
O-262AA
VS-10CTQ150S-M3
-JESD47
2002/95/EC.
2002/95/EC
2011/65/EU.
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SAM7S256
Abstract: GANgpro AT91SAM7S256C-AU SAM7S512 SAM7S64 6175L AT91SAM 40882 AT91SAM7S64C la 4508 ic schematic diagram
Text: Features • Incorporates the ARM7TDMI ARM® Thumb® Processor • • • • • • • • • • – High-performance 32-bit RISC Architecture – High-density 16-bit Instruction Set – Leader in MIPS/Watt – EmbeddedICE In-circuit Emulation, Debug Communication Channel Support
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32-bit
16-bit
SAM7S512)
SAM7S256)
SAM7S128)
SAM7S64)
SAM7S321/32)
SAM7S161/16)
6175L
28-Jul-11
SAM7S256
GANgpro
AT91SAM7S256C-AU
SAM7S512
SAM7S64
AT91SAM
40882
AT91SAM7S64C
la 4508 ic schematic diagram
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Untitled
Abstract: No abstract text available
Text: RedBox M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 1277 MHz 1691 MHz Tuning Voltage: 0.5 14.0 VDC Supply Voltage: 4.75 5.0 5.25 VDC Output Power: +2.0 +4.0 +6.0 dBm -10 dBc Supply Current:
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10kHz
28-Jul-10
CRBV55BE-1277-1691
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M34C1
Abstract: No abstract text available
Text: M34 www.vishay.com Vishay Wet Tantalum Capacitors Surface Mount, Molded Case FEATURES • Terminations: standard tin/lead SnPb , 100 % tin (RoHS compliant) terminations available • Very high capacitance, 10 F to 470 μF 6 V to 125 V, - 55 °C to + 125 °C
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
M34C1
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D55342
Abstract: ASTM-E595
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . E / H T- Level M / D55342 KEY BENEFITS • QPL approved for “T” level high-reliability space applications for characteristics E, H, K, M • The product now receives a burn-in prior to shipment • Materials are approved for space outgassing limits
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D55342)
MIL-PRF-55342
E-595)
28-Jul-10
M55342/10
VMN-PT0232-1008
D55342
ASTM-E595
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Untitled
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2175 MHz 4.5 VDC 2175 Tuning Voltage: MHz 0.5 Supply Voltage: 7.6 8.0 8.4 VDC Output Power: +5.0 +7.0 +9.0 dBm Supply Current: 28 nd
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10kHz
100kHz
CVCO55CC
CVCO55CC-2175-2175
28-Jul-10
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Untitled
Abstract: No abstract text available
Text: E/H T-Level (Military M/D55342) Vishay Thin Film QPL MIL-PRF-55342 Qualified Thin Film Resistor, Surface Mount Chip FEATURES • T-level (space) qualified • Passes outgassing requirements requirements of ASTM-E595 • TCR to ± 25 ppm/°C • Tolerances to ± 0.1 %
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M/D55342)
MIL-PRF-55342
ASTM-E595
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: T8514VB www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.17 • Peak wavelength: λ = 850 nm
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T8514VB
T8514VB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: T8714VA www.vishay.com Vishay Semiconductors Specification of GaAlAs IR Emitting Diode Chip FEATURES • Package type: chip - • Package form: single chip • Technology: double hetero • Dimensions chip L x W x H in mm : 0.37 x 0.37 x 0.16 • Peak wavelength: λ = 865 nm
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T8714VA
T8714VA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: TS8520VA www.vishay.com Vishay Semiconductors Specification of High Power IR Emitting Diode Chip FEATURES • Package type: chip • Package form: single chip • Technology: surface emitter • Dimensions chip L x W x H in mm : 0.508 x 0.508 x 0.17 • Peak wavelength: λ = 850 nm
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TS8520VA
TS8520VA
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: T163VU www.vishay.com Vishay Semiconductors Infrared Emitting Diode Chip, 950 nm, GaAs FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.265 • Peak wavelength: λp = 950 nm • High reliability
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T163VU
T163VU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Wet Tantalum Capacitors
Abstract: tag 8739 TAG 8634 arcotronics 1.27.6 MT 8223 tag 8708 TAG 8643 castanet capacitor tag 8807
Text: v i s h ay i N T e R T e C h N O L O Gy, i N C . INTERACTIVE data book wet tantalum capacitors vishay vse-db0030-11F Notes: 1. To navigate: a Click on the vishay logo on any datasheet to go to the Contents page for that section. Click on the vishay logo on any Contents
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vse-db0030-11
Wet Tantalum Capacitors
tag 8739
TAG 8634
arcotronics 1.27.6
MT 8223
tag 8708
TAG 8643
castanet capacitor
tag 8807
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Smk1360
Abstract: smk1360fd TO-220F-3L SMK1360F
Text: SMK1360FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features • BVDDS=600V Min. Low gate charge: Qg=41nC (Typ.) Low drain-source On resistance: RDS(on)=0.65Ω (Max.) 100% avalanche tested RoHS compliant device Ordering Information
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SMK1360FD
SMK1360
O-220F-3L
SDB20D45
28-JUL-11
KSD-T0O058-000
Smk1360
smk1360fd
TO-220F-3L
SMK1360F
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R AW IN G 2 S U N P U B L IS H E D . RELEASED FOR P U B L IC A T IO N - - R E V IS IO N S ALL RIGHTS RESERVED. COPYRIGHT By - LTR D E S C R IP TIO N REVISED PER ECR- DATE - 00 8 9 4 1 DWN A PVD 28JUL1 ' U - DIRECTION OFF TOP OF REEL D D ' - h te
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28JUL1
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Untitled
Abstract: No abstract text available
Text: Product Specification 108-5891 — Tyco Electronics 28JUL10 Rev. C Sealed EFI ECU 0.64/2.3II I/O Connector 1. Scope: 1.1 C on tents T his sp ecification co v e rs the requirem ents fo r product perform ance, te s t m ethods and quality assurance provisions o f Sealed 0.64/2.3 E I/O Connector.
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28JUL10
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gi 9436
Abstract: 4376521
Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R A LL C O P Y R IG H T By 2 3 -, P U B L IC A T IO N R IG H TS - R E V IS IO N S RESERVED. - D E S C R IP T IO N CAPTIVE SCREWS. DIM A+.025 r K5 R EVISED RER E C O - 1 1 - 0 1 51 3 6 MARK WITH WHITE PERMANENT INK.
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28JUL1
22APR03
6PCV--XX--006
gi 9436
4376521
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zytel 101
Abstract: Zytel
Text: T H I S D R A W I N G IS U N P I J R I ISHFl~ _ _ V F R T - B -A-U-l—l-T I i r + f t W r m T F F F F N ^ r H T F Z E IC H N U N G C O P Y R IG H T R E V IS IO N S R E L E A S E D FOR PU BLIC ATIO N FR E I F U E R V E R D E F F E N T L I C H U N G
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ECR-10-026307
30JAN10
28JUL1
zytel 101
Zytel
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