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    28M1 Search Results

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    28M1 Price and Stock

    Micron Technology Inc MT41K128M16JT-125-XIT:K

    IC DRAM 2GBIT PARALLEL 96FBGA
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    DigiKey MT41K128M16JT-125-XIT:K Tray 4,127 1
    • 1 $10.63
    • 10 $9.437
    • 100 $8.47138
    • 1000 $7.75195
    • 10000 $7.34886
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    Alliance Memory Inc AS4C128M16D3LC-12BCN

    IC DRAM 2GBIT PARALLEL 96FBGA
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    DigiKey AS4C128M16D3LC-12BCN Tray 2,342 1
    • 1 $8.86
    • 10 $7.866
    • 100 $7.32175
    • 1000 $6.19714
    • 10000 $6.19714
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    Newark AS4C128M16D3LC-12BCN Bulk 198 1
    • 1 $5.06
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    Karl Kruse GmbH & Co KG AS4C128M16D3LC-12BCN 223,562
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    New Advantage Corporation AS4C128M16D3LC-12BCN 350 1
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    Micron Technology Inc MT47H128M16RT-25E:C-TR

    IC DRAM 2GBIT PARALLEL 84FBGA
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    DigiKey MT47H128M16RT-25E:C-TR Reel 2,000 2,000
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    KEMET Corporation A750MW128M1EAAE014

    CAP ALUM POLY 1200UF 20% 25V TH
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    DigiKey A750MW128M1EAAE014 Bulk 1,746 1
    • 1 $1.55
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    Newark A750MW128M1EAAE014 Bulk 1,250 1
    • 1 $1.75
    • 10 $1.02
    • 100 $0.799
    • 1000 $0.623
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    TTI A750MW128M1EAAE014 Bulk 2,500
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    SOURIAU-SUNBANK RC28M1K

    CONN SOCKET 28-30AWG GOLD CRIMP
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    DigiKey RC28M1K Bulk 1,662 1
    • 1 $2.43
    • 10 $1.845
    • 100 $1.4199
    • 1000 $1.11626
    • 10000 $1.02178
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    RS RC28M1K Bulk 10
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    • 10 $2.11
    • 100 $1.69
    • 1000 $1.69
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    Interstate Connecting Components RC28M1K 150
    • 1 $1.46
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    • 100 $1.46
    • 1000 $1.1587
    • 10000 $1.1406
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    28M1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MS75103-1

    Abstract: 21aw MS91189 MS75103-9 MS75103-10
    Text: RF INDUCTORS - LEADED RF INDUCTORS - THRU HOLE 28M PART NUMBER 28M121K 28M151K 28M181K 28M221K 28M271K 28M331K 28M391K 28M471K 28M561K 28M681K 28M821K 28M102K 28M122K 28M152K 28M182K 28M222K 28M272K 28M332K 28M392K 28M472K 28M562K 28M682K 28M822K 28M103K 28M123K


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    PDF 28M121K 28M151K 28M181K 28M221K 28M271K 28M331K 28M391K 28M471K 28M561K 28M681K MS75103-1 21aw MS91189 MS75103-9 MS75103-10

    MS75103

    Abstract: No abstract text available
    Text: STANDARD RF INDUCTORS - THRU HOLE 28M 28MLF* TRADITIONAL Pb RoHS COMPLIANT Wirewound, Molded COTS PART MIL SPEC L NUMBER DESIGNATION µH 28M121K MS91189-14 28M151K MS91189-15 28M181K MS91189-16 28M221K MS91189-17 28M271K MS91189-18 28M331K MS91189-19 28M391K MS91189-20


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    PDF 28MLF* 28M121K MS91189-14 28M151K MS91189-15 28M181K MS91189-16 28M221K MS91189-17 28M271K MS75103

    28MLF

    Abstract: No abstract text available
    Text: RF INDUCTORS - LEADED RF INDUCTORS - THRU HOLE 28MLF PART NUMBER 28M121KLF 28M151KLF 28M181KLF 28M221KLF 28M271KLF 28M331KLF 28M391KLF 28M471KLF 28M561KLF 28M681KLF 28M821KLF 28M102KLF 28M122KLF 28M152KLF 28M182KLF 28M222KLF 28M272KLF 28M332KLF 28M392KLF 28M472KLF


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    PDF 28MLF 28M121KLF 28M151KLF 28M181KLF 28M221KLF 28M271KLF 28M331KLF 28M391KLF 28M471KLF 28M561KLF 28MLF

    Untitled

    Abstract: No abstract text available
    Text: 2SC6075 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6075 Power Amplifier Applications Power Switching Applications Unit: mm Low collector emitter saturation voltage : VCE sat = 0.5 V (max)(IC = 1A) High-speed switching: tstg = 0.4 µs (typ) Absolute Maximum Ratings (Ta = 25°C)


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    PDF 2SC6075

    RC14M30K

    Abstract: RM20M12K UTS712D10P32 souriau 841 UTS7142G1P UTS0124P UTS78D4P32 UTS61412S AWG 24 multi strand copper wire UTS6JC147S
    Text: UTS Series Dynamic IP68/69K • UV Resistant • UL/IEC Compliant Overview UTS Series Cable assembly . 14 2 contacts . 20 2 + ground contacts . 28


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    PDF IP68/69K SL105. sl46D2. INDUTSCA07EN RC14M30K RM20M12K UTS712D10P32 souriau 841 UTS7142G1P UTS0124P UTS78D4P32 UTS61412S AWG 24 multi strand copper wire UTS6JC147S

    K2846

    Abstract: VDD480 2SK2846
    Text: 2SK2846 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2846 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 4.2Ω (標準) z オン抵抗が低い。


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    PDF 2SK2846 VDD480 K2846 20070701-JA K2846 2SK2846

    k2835

    Abstract: 2SK2835
    Text: 2SK2835 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ 2SK2835 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 0.56Ω(標準) z オン抵抗が低い。


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    PDF 2SK2835 VDD100 K2835 20070701-JA k2835 2SK2835

    k3374

    Abstract: 2SK3374
    Text: 2SK3374 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3374 Switching Regulator Applications • Unit: mm Low drain-source ON resistance: RDS (ON) = 4.0 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


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    PDF 2SK3374 k3374 2SK3374

    D2461

    Abstract: 2SD2461
    Text: 2SD2461 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2461 Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.1 A) • Low saturation voltage: VCE (sat) = 0.3 V (typ.) (IC = 0.5 A, IB = 5 mA) Absolute Maximum Ratings (Ta = 25°C)


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    PDF 2SD2461 D2461 2SD2461

    c5351

    Abstract: 2SC5351
    Text: 2SC5351 東芝トランジスタ シリコンNPN三重拡散形 2SC5351 ○ 高速高電圧スイッチング用 ○ スイッチングレギュレータ用 ○ 高速 DC-DC コンバータ用 単位: mm • 高速です。 : tr = 0.5 s 最大 , tf = 0.3 μs (最大)


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    PDF 2SC5351 20070701-JA c5351 2SC5351

    2SA1892

    Abstract: 2SC5029
    Text: 2SA1892 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1892 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A, IB = −0.05 A) • High collector power dissipation: PC = 1.3 W


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    PDF 2SA1892 2SC5029 2SA1892 2SC5029

    C5562

    Abstract: 2SC5562
    Text: 2SC5562 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5562 Switching Regulator and High-Voltage Switching Applications DC-DC Converter Applications • Unit: mm Excellent switching times: tr = 0.7 s max tf = 0.5 μs (max), (IC = 0.3 A) • High breakdown voltage: VCEO = 800 V


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    PDF 2SC5562 C5562 2SC5562

    k2599

    Abstract: 2SK2599
    Text: 2SK2599 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2599 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance Unit: mm : RDS (ON) = 2.9 Ω (typ.) z High forward transfer admittance


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    PDF 2SK2599 k2599 2SK2599

    D2480

    Abstract: 2SD2480
    Text: 2SD2480 東芝トランジスタ シリコンNPNエピタキシャル形 ダーリントン接続 2SD2480 ○ マイクロモータドライブハンマドライブ用 ○ スイッチング用 ○ 電力増幅用 • 直流電流増幅率が高い。: hFE = 2000 (最小) (VCE = 2 V, IC = 1 A)


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    PDF 2SD2480 20070701-JA D2480 2SD2480

    C5562

    Abstract: 2SC5562
    Text: 2SC5562 東芝トランジスタ シリコンNPN三重拡散形 2SC5562 ○ 高速高電圧スイッチング用 ○ スイッチングレギュレータ用 ○ 高速 DC-DC コンバータ用 単位: mm • スイッチング時間が速い。 : tr = 0.7 s 最大


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    PDF 2SC5562 20070701-JA C5562 2SC5562

    Untitled

    Abstract: No abstract text available
    Text: 2SA1893 SILICON PNP EPITAXIAL TYPE PCT PROCESS U nit in mm ST O R O B E FLASH A PPLIC A TIO N S. M E D IU M P O W E R A M P L IF IE R A PPLIC A TIO N S. = 100~320 (V c e = - 2V, l 0 = —0.5A) hFE = 70 (M in.)(V cE = —2V, I c = - 4 A ) Low Collector Saturation Voltage


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    PDF 2SA1893 --35V, --10mA,

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TY PE PCT PRO CESS HIGH CURRENT SW ITCH IN G APPLICATIONS. U n it in mm Low Collector Saturation Voltage : VCE (sat)= -0.4V (Max.) (Ic = -3 A , I b = - 0.15A) High Speed Switching Time : tgtg=1.0/iS (Typ.) Complementary to 2SC5076 in nr


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    PDF 2SC5076 --10mA,

    2SK2229

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2229 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2229 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 8.0 ±0.2 APPLICATIONS 4V Gate Drive


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    PDF 2SK2229

    2SK2200

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2200 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2200 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE 8.0 ± 0.2


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    PDF 2SK2200

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2229 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M OSV 2SK2229 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 8.0 ± 0.2


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    PDF 2SK2229 0-12n 20kfl)

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5029 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC5029 U nit in mm POWER SWITCHING APPLICATIONS • Low Saturation Voltage : v CE(sat) = °-5V (Max.) • High Collector Power Dissipation : P q = 1.3W (Ta = 25°C)


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    PDF 2SC5029 2SA1892

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SJ378 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2SJ 378 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 5.0 ± 0 .2 4V Gate Drive


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    PDF 2SJ378

    Untitled

    Abstract: No abstract text available
    Text: SERIES GOWAIMDA • R.F. MOLDED CHOKES Style - Phenolic: LT 4, Grade 1, Class B Powdered Iron: LT 10, Grade 1, Class A Maximum Operating Temp. - Phenolic: -55° to +125°C Powdered Iron: -55° to +105°C Maximum Temperature Rise- Phenolic: 35°C Powdered Iron: 15°C


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    PDF 28M562K 28M682K 28M822K 28M103K 28M123K MS75103-6 MS75103-7 MS75103-8 MS75103-9 MS75103-10

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SC5075 TO SHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5075 SW ITCHING REGULATOR A N D HIGH VOLTAGE SW ITCHING Unit in mm APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATIONS • High Speed Switching : tr=1.0/<s Max. , tf=1.0,«s (Max.)


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    PDF 2SC5075