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    Infineon Technologies AG SPD28N05L

    SIPMOS POWER TRANSISTOR Power Field-Effect Transistor, 28A I(D), 55V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SPD28N05L 2,000
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    28N05L Datasheets Context Search

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    28N05L

    Abstract: SPD28N05L 28n05 10DC10 TRANSISTOR TYPE 0235 P-TO252 Q67040-S4114-A2 SPU28N05L
    Text: SPD 28N05L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.026 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 28 A • Logic Level • dv/dt rated


    Original     		PDF 28N05L SPD28N05L P-TO252 Q67040-S4122 P-TO251 Q67040-S4114-A2 SPU28N05L 28N05L SPD28N05L 28n05 10DC10 TRANSISTOR TYPE 0235 P-TO252 Q67040-S4114-A2 SPU28N05L

    28N05L

    Abstract: 28n05 a2460
    Text: SPD 28N05L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.026 Ω Continuous drain current ID Enhancement mode • Avalanche rated 55 V 28 A • Logic Level • dv/dt rated


    Original     		PDF 28N05L SPD28N05L SPU28N05L P-TO252 P-TO251 Q67040-S4114-A2 Q67040-S4122-A2 SPD28N05L 28N05L 28n05 a2460

    28N05L

    Abstract: No abstract text available
    Text: Infineon h te c imPr° n ol o g i Ive<& SPD 28N05L Hosion “ SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage '/DS Drain-Source on-state resistance f l DS on) 0.026 Si A 28 t> • Enhancement mode Continuous drain current


    OCR Scan     		PDF 28N05L SPD28N05L SPU28N05L Q67040-S4122 P-T0251 P-T0252 Q67040-S4114-A2 S35bG5 Q133777 SQT-89 28N05L