29-42A CH Search Results

2r512

Abstract: LTC1709 2R5SP1200M BAT54A BAT54S FDS7760A LTC1709-8 LTC1709-9 AMD Voltage regulation design A42A
Contextual Info: advertisement Low Cost, High Efficiency 42A DC/DC Converter – Design Note 225 Wei Chen Introduction The LTC 1709-8/LTC1709-9 are dual, current mode, 2-phase controllers that drive two synchronous buck stages out of phase. This architecture reduces the number

Micronel

Abstract: 2r512 design ideas rubycon electrolytic capacitor ripple current 2R5SP1200M BAT54A BAT54S FDS7760A LTC1709 LTC1709-8
Contextual Info: DESIGN IDEAS LTC1709 Low Cost, High Efficiency 42A Converters with VID Control Reduce Input and Output Capacitors by Wei Chen Introduction used, resulting in a faster load transient response. This, plus the 5-bit VID table, makes these devices particularly attractive for CPU power

MOSFET VRM

Abstract: 2N7002 BAT54 BAT54A CEP125-1R0MC-H LTC3719 Si7448DP UPS840 low profile Ceramic capacitors inductors henry
Contextual Info: advertisement Cost Effective, Low Profile, High Efficiency 42A Supply Powers AMD Hammer Processors – Design Note 285 Henry J. Zhang and Wei Chen Introduction The new AMD Hammer processors require power supplies that can deliver more than 40A current at very low

ixtp42n15t

Abstract: IXTA42N15T ixtp42n15 42n15 42N15T RESERVED38
Contextual Info: IXTA42N15T IXTP42N15T TrenchHVTM Power MOSFET VDSS ID25 = 150V = 42A Ω ≤ 45mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 150 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 150 V VGSM

Contextual Info: TrenchHVTM Power MOSFET VDSS ID25 IXTA42N15T IXTP42N15T = 150V = 42A Ω ≤ 45mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 150 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 150 V VGSM

2SK3574

Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3574 TO-263 +0.1 1.27-0.1 Features 4.5V drive available. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low gate charge 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 22nC TYP. VDD = 24 V, VGS = 10 V, ID = 48 A Built-in gate protection diode

Contextual Info: Preliminary Technical Information TrenchHVTM Power MOSFET IXTA42N15T IXTP42N15T VDSS ID25 = 150 V = 42 A Ω ≤ 45 mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ

75329s

Abstract: HUF75329P3 19407
Contextual Info: HUF75329G3, HUF75329P3, HUF75329S3, HUF75329S3S HARRIS S E M I C O N D U C T O R 42A, 55V, 0.025 Ohm, N-Channel, UltraFET Power MOSFETs February 1998 MM Features • 42A, 55V • Ultra Low On-Resistance, ros ON = 0.025(2 • Diode Exhibits Both High Speed and Soft Recovery

Contextual Info: MCOTS-C-28E-9R6-HZ Single Output Half-brick MILITARY COTS DC/DC CONVERTER 16-70V Continuous Input 16-100V Transient Input 9.6V Output 42A Output 94%@21A/93%@42A Efficiency Full Power Operation: -55°C to +100°C Mil-COTS The MilQor series of Mil-COTS DC/DC converters brings

2N03L13

Abstract: Datasheet 2N03L13 SPB42N03S2L-13 2n03l D6032 smd TRANSISTOR code marking 8K SPI42N03S2L-13 SPP42N03S2L-13 ANPS071E INFINEON PART MARKING to263
Contextual Info: SPI42N03S2L-13 SPP42N03S2L-13,SPB42N03S2L-13 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 30 • Enhancement mode R DS on ID • Logic Level • Excellent Gate Charge x R DS(on) P- TO262 -3-1 V 12.9 mΩ 42 P- TO263 -3-2 A P- TO220 -3-1

2N03L13

Abstract: M3024
Contextual Info: SPI42N03S2L-13 SPP42N03S2L-13,SPB42N03S2L-13 OptiMOS Buck converter series Product Summary Feature 30 • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • Excellent Gate Charge x RDS(on) P- TO262 -3-1 V 12.9 mΩ 42 P- TO263 -3-2 A P- TO220 -3-1

2N03L13

Abstract: Q67042-S4104 2N03L SPB42N03S2L-13 M3024
Contextual Info: SPI42N03S2L-13 SPP42N03S2L-13,SPB42N03S2L-13 OptiMOS =Power-Transistor Product Summary Feature 30 VDS
N-Channel R DS on
Enhancement mode ID
Logic Level
Excellent Gate Charge x RDS(on) P- TO262 -3-1 V m
12.9 42 P- TO263 -3-2 A P- TO220 -3-1 product (FOM)

IXBT42N170

Abstract: IXBH42N170 siemens ups b42 transistor 537 b 360
Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH42N170 IXBT42N170 VCES = 1700V IC90 = 42A VCE sat ≤ 2.8V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

TMPZ84

Abstract: TMPZ84C40
Contextual Info: TO SH IBA TMPZ84C40A/41A/42A/43A/44A TMPZ84C40AP-6 / 41AP-6 / 42AP-6 / 43AF-6 / 44AT-6 TMPZ84C40AM-6 /41AM-6 / 42AM-6 TMPZ84C40AP-8 / 41AP-8 / 42AP-8 TLCS-Z80 SIO: SERIAL INPUT/OUTPUT CONTROLLER 1. GENERAL DESCRIPTION AND FEATURES The TMPZ84C40A SIO/O , TMPZ84C41A (SIO/1), TMPZ84C42A (SIO/2),

marking WR6

Contextual Info: T O S H IB A T M PZ84C40 A/41 A/42 A/43A/44A TMPZ84C40AP-6 / 41AP-6 / 42AP-6 / 43AF-6 / 44AT-6 TMPZ84C40AM-6 / 41 AM-6 / 42AM-6 TMPZ84C40AP-8 / 41AP-8 / 42AP-8 TLCS-Z80 SIO: SERIAL INPUT/OUTPUT CONTROLLER 1. GENERAL DESCRIPTION AND FEATURES The TMPZ84C40A SIO/O , TMPZ84C41A (SIO/1), TMPZ84C42A (SIO/2),

L-3DP3C

Abstract: VIM-503-DP-RC-LV RTS232 LM1117MPX-3 T20P60 1f t29 MD32A VIM-503-DP CR-36 VIM-503-DPRC-LV
Contextual Info: 0R 2 1 0R 2 2-3C DNF 6 7 10 9 2 18.432MHz 2 9.8304MHz 100nF 1 2 2 2 1 1 VCC=UVCC 12pF DNF 1M 12pF 1 VCC=UVCC R8 GROUND GROUND R16 4K7 4K7 1 100nF 3 C2 DNF 2 1 1 4-4C 4-3B, 3-3D, 3-3D 4-4C 4-3B, 3-3D, P33 P34 P35 R15 R14 P34 pullup also for normal boot mode

Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 1700V IC90 = 42A VCE sat ≤ 2.8V IXBH42N170 IXBT42N170 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

ciss

Abstract: 2SK3432 2SK34
Contextual Info: MOSFET SMD Type MOS Field Effect Transistor 2SK3432 TO-263 +0.1 1.27-0.1 Features MAX. VGS = 4 V, ID = 42 A Low Ciss: Ciss = 9500 pF TYP. 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Built-in gate protection diode 5.60 RDS(on)2 = 6.9 m +0.2 4.57-0.2 +0.2 2.54-0.2

WR1 marking code

Contextual Info: TOSHIBA 54E D CUC/UP • TOSHIBA 0022m ? TLb » T O S B TMPZ84C40A/41A/42A/43A/44A TM PZ84C40AP-6 / 41AP-6 / 42AP-6 TMPZ84C40AM-6 / 41AM-6 / 42AM-6 TMPZ84C43AF-6 / 44AT-6 TM PZ84C40AP-8 / 41AP-8 / 42AP-8 TMPZ84C40AM-8 / 41AM-8 / 42AM-8 TMPZ84C43AF-8 / 44AT-8

Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBR42N170 VCES = 1700V IC90 = 32A VCE sat ≤ 2.9V ISOPLUS247TM E153432 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

DIODE 84A

Abstract: IXBR42N170 ISOPLUS247 transistor 42A B42n
Contextual Info: Preliminary Technical Information IXBR42N170 High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 1700V IC90 = 32A VCE sat ≤ 2.9V ISOPLUS247TM E153432 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT IXGH64N60B3 IXGT64N60B3 VCES = 600V IC110 = 64A VCE sat ≤ 1.8V Medium speed low Vsat PT IGBTs for 5 - 40kHz switching tfi(typ) = 88ns Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600

APT0406

Abstract: APT0501 APT0502
Contextual Info: APTM50DHM65T3G VDSS = 500V RDSon = 65mΩ typ @ Tj = 25°C ID = 51A @ Tc = 25°C Asymmetrical - Bridge MOSFET Power Module 13 14 Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Q1 CR3 18 22 7 Features

Contextual Info: APTM50DHM65T3G VDSS = 500V RDSon = 65mΩ typ @ Tj = 25°C ID = 51A @ Tc = 25°C Asymmetrical - Bridge MOSFET Power Module 13 14 Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Q1 CR3 18 22 7 Features