2902 TRANSISTOR Search Results

RCA LM324

Abstract: LM324L
Contextual Info: Operational Amplifiers HARRIS S E M I C O N D U C T O R RCA C A 124, C A 224, CA324, C A 2902, LM 324*, LM 2902* INTERSIL May 1990 Quad Operational Amplifiers For Commercial, Industrial, and Military Applications Features: A pp lica tio n s: • a a a ■

Contextual Info: ^vnl-dontLusto 20 STERN AVE. SPRINGRELO, NEW JERSEY 07081 U.SA TELEPHONE: 973 376-2902 (212) 227-6008 FAX (973) 376-8980 2N4915 (SILICON) NPN power transistors for use in power amplifier and switching circuits. Complement to PNP 2N4M8. MAXIMUM RATINGS Symbol

2N3855A

Contextual Info: TELEPHONE: 973 376-2902 (212| 227-600B FAX: (973) 376-0060 20 STERN AVE. 3PHINGF1S-D, NEW JERSEY 07081 U.SA 2N3855A, Silicon Transistor absolute maximum ratings: (25°C) (unless otherwise specified) Vollagei Collector to Emitter v .'iO VullS Emitter to Base

Contextual Info: tStml-dontLuckot ZPioJuati, Una. TELEPHONE: 973 378-2902 (212) 227-8008 FAX: (973) 3784980 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N5330 30 AMP HIGH SPEED NPN TRANSISTOR 150 VOLTS JEDECTO-61 FEATURES ALL TERMINALS ISOLATED FROM CASE RADIATION TOLERANT

infineon power cycling igbt3

Abstract: IGBT4 snap-off diode infineon igbt3 1200v infineon power cycling curves infineon igbt4 1200v Measurement of stray inductance for IGBT 2003N igbt simulation IGBT2
Contextual Info: 1200V IGBT4 -High Power- a new Technology Generation with Optimized Characteristics for High Current Modules M. Bäßler1, P.Kanschat1, F.Umbach2, C. Schaeffer3 1 Infineon Technologies AG, Max Planck Str.5, D-59581 Warstein Germany, Tel +49-2902-764-2290,

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 378-2902 (212) 227-6008 FAX: (973) 378-8960 USA 2N3244 (SILICON) PNP silicon, transistors for medium-current, high-speed switching and driver applications. MAXIMUM RATINGS Rating Symbol Collcctor-Dasc Voltage

2N3380

Contextual Info: 20STERNAVE SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 378-2902 (212) 227-8008 FAX: (973) 376-8080 U.SA 2N3380 P-CHANNEL DIFFUSED SILICON FIELD-EFFECT TRANSISTOR •ABSOLUTE MAXIMUM RATINGS Gate-Drain Voltage (Note 1) 30 V Gate-Source Voltage (Note 1) 30V «j

single phase inverters circuit diagram

Abstract: single phase dual output inverter with three switch legs solar inverters circuit diagram 1ED020I12-S inverter circuit using driver ic 2ED020I12-FI heatsink water FF1000R17IE4 LQ66 2ED020I12-FI ALCAN IGBt driver 2ed020I12-FI
Contextual Info: Benefits of System-oriented IGBT Module Design for High Power Inverters LUNIEWSKI Piotr Benefits of System-oriented IGBT Module Design for High Power Inverters Piotr Luniewski, Uwe Jansen INFINEON TECHNOLOGIES AG Max-Planck-Str. 5 Warstein, Germany Tel.: +2902 / 764 – 2306

MAX1551

Abstract: MAX1555EZK-T MAX1555 MAX1551-MAX1555 POK LED MAX1551EZK MAX1551EZK-T MAX1555EZK MAX1555EZ
Contextual Info: 19-2902; Rev 0; 7/03 SOT23 Dual-Input USB/AC Adapter 1-Cell Li+ Battery Chargers Features ♦ Charge from USB or AC Adapter ♦ Automatic Switchover when AC Adapter is Plugged In ♦ On-Chip Thermal Limiting Simplifies Board Design ♦ Charge Status Indicator

YKB21

Abstract: FFC-10BMEP1 CN101 CN001 2902 CN102 PCM2900 DEM-PCM2902 PCM2902 CN002
Contextual Info: DEMĆPCM2900/2902 EVM User’s Guide August 2002 DAV Digital Audio/Speaker SLEU024 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

AU2902

Abstract: AU2902N AU2902D
Contextual Info: Philips Semiconductors Product specification Low power quad operational amplifier DESCRIPTION AU2902 PIN CONFIGURATION The AU 2902 consists of four independent, high-gain, internally frequency-compensated operational amplifiers designed specifically to operate from a single power supply over a wide range of voltages.

LM324A

Abstract: lm324 generator wien LM324 as V to I converter lm224 lm324 single supply Oscillator LOW POWER operational amplifier LM324 supply voltages for lm324 LM324N LM324N PIN DIAGRAM LM224 14 PIN DIAGRAM
Contextual Info: g MOTOROLA LM324, LM324A, LM224, LM 2902, LM 2902V Quad Low Power Operational Amplifiers The LM324 series are low-cost, quad operational amplifiers with true differential inputs. They have several distinct advantages over standard operational amplifier types in single supply applications. The quad amplifier

Contextual Info: DEMĆPCM2900/2902 EVM User’s Guide March 2007 Audio Converter Products, Digital Audio SLEU024A IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue

"Op Amp" lm 324

Abstract: LM324 Signetics SA534D LM324F SA534N signetics lm324 LM324D
Contextual Info: LM124/224/324/324A/ SA534/LM2902 Signetics Low Power Quad Op Amps Product Specification Linear Products DESCRIPTION FEATURES The LM 124/S A 534/LM 2902 series con­ sists of four independent, high-gain, in­ ternally frequency-com pensated opera­ tional am plifiers designed specifically to

"Op Amp" lm 324

Abstract: LM324DDD LM124D LM324N voltage rating 2902 V lm1242 Lm 324 ic
Contextual Info: sgfìfl L M 1 2 4 /L M 2 2 4 /L M 3 2 4 , LM 124A /L M 224A /L M 324A , LM 2902 Low Power Quad Operational Amplifiers FEATURES • Internally frequency compensated for unity gain • Large dc voltage gain 100dB • Wide bandwidth unity gain (temperature compensated)

Contextual Info: f£\ h a f r f r CA124, CA224, CA324 LM324*, LM2902* i s s e m i c o n d u c t o r Quad Operational Amplifiers for Commercial, Industrial, and Military Applications March 1993 Features Description • Operation from Single or Dual Supplies The CA124, CA224, CA324, LM324, and LM 2902 consist of

LM324 DIL

Abstract: LM324N circuit DIAGRAM LM324NPD LM324DDD ic lm324N LM324N LM124D LM324N schematic LM324n power dissipation lm324 DUAL SUPPLY application
Contextual Info: LM 12 4 / L M 2 2 4 / L M 3 2 4 , LM 124A/LM 224A/LM 324A, LM 2902 L o w P ow er Q uad O p eratio nal A m p lifie rs D lfte lr S O IL FEATURES G EN ER AL DESCRIPTION • Internaily frequency compensated for unity gain • Large dc voltage gain 100dB • Wide bandwidth unity gain

CA324

Abstract: CA224 transistor v15 CA124 JCS-24 LM324AND CA2902 LM2902 LM324 LM 124 four amplifier
Contextual Info: A R R 430EE71 MGE D SECTOR GD31bS7 4 •HAS C A 124, C A 224, C A 324, C A 2902 L M 3 2 4 *, L M 2 9 0 2 * I S Q u ad O p eratio n al Am plifiers F o r C o m m e rcia l, Ind ustrial, an d Military A p p licatio n s A ugust 1991 Features Description • Operation from Single or Dual Supplies

UJT 2N2646

Abstract: 2n2646 ujt 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2646 TO-92 UJT 2N4871 2N4871 applications of ujt UJT 2N2646 oscillators 22A01 ujt transistor
Contextual Info: Silicon Unidirectional Switch - SUS Similar to 4-Layer Diodes, but has gate electrode that permits synchronization. V s V olts Nom Device Type Plastic Case 29-02 I TO-92 MUS4987 M US4988 's Min. Max. 6.0 7.5 10 9.0 jUA Max. m A M ax. ^ 1.5 0.5 500 150 Unijunction Transistors - UJT

29021i

Abstract: equivalent integrated 2902f 2902 LTC2902 LINEAR TECHNOLOGY 009 1144 2902 TRANSISTOR
Contextual Info: LTC2902 Programmable Quad Supply Monitor with Adjustable Reset Timer and Supply Tolerance DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Simultaneously Monitors Four Supplies 16 User Selectable Combinations of 5V, 3.3V, 3V, 2.5V, 1.8V, 1.5V and/or ±Adjustable Voltage

DIAC 1n5758

Abstract: 1N5758 diac DIAC 1N5761 1N5758 diac advantage 1N5761 1N5758A 1N5760 1N5761A DIAC 1n5760
Contextual Info: Trigger Devices Trigger devices come under a variety o f d iffe re n t classifications, w ith somewhat d iffe rin g characteristics — U n ijun ctio n Transistors U nidirectional Switches B idirectional Switches Bilateral Triggers PUT D IA C SBS SUS UJT 4 -Layer Diodes

2n7000 darlington

Abstract: 2N7000 ADI1318RI TO226AA
Contextual Info: Order this data shaat by 2N7000/D MOTOROLA • SEMICONDUCTOR TECHNICAL DATA 2N7000 Advance Information Small-Signal Transistor Field Effect N-Channel Enhancement-Mode Silicon Gate TMOS J . are designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers.

coreless transformer Technology

Abstract: Eupec Power Semiconductors 2ED020I12FA coreless 2ED020I12-F igbt driver ic igbt eupec 2ed020i12 Eupec 2A mosfet igbt driver stage
Contextual Info: Press Release – May 2003 PCIM 2003 New IGBT Driver IC for Blocking Voltages up to 1200V based on Coreless Transformer Technology By introducing the 2ED020I12F, a half bridge Driver IC, eupec offers a reliable and cost effective solution for driving IGBT

transistor T79

Abstract: LM324N LM224J
Contextual Info: RAYTHEON-. SEMICONDUCTOR 57 » É J 75^73^.0 O O O M ^ 57C 0 4 4 4 9 .7597 360 RAYTHEON CO* PRO D U CT SPECIFICATIO N S Raytheon Single-Supply Quad Operational Amplifiers Features • ■ ■ ■ ■ ■ Large DC voltage gain — 100dB Compatible with all forms of logic