29046 Search Results

Contextual Info: jdt Integrated Device Technology, Inc. 3.3V C M O S STATIC RAM 1 MEG 128K x 8) CENTER POWER & GROUND PINOUT PRELIMINARY IDT71V124SA FEATURES: DESCRIPTION: • 128K x 8 advanced high-speed C M O S static RAM • JED EC revolutionary pinout (center power/GND) for

Contextual Info: LOW POWER 2V CMOS SRAM 1 MEG 128KX 8-BIT ADVANCE INFORMATION IDT71T024 I n te g r a te d D e v iz e T e c h n o lo g y , l i e . FEATURES: DESCRIPTION: • 128K x 8 Organization • Wide Operating Voltage Range: 1.8V to 2.7V • Commercial (0° to 70°C) and Industrial (0° to 70°C)

Contextual Info: A B W A N O B O N IP O R Q W O Q N in te i 82091AA ADVANCED INTEGRATED PERIPHERAL AIP • Single-Chip PC Compatible I/O Solution for Notebook and Desktop Platforms: — 82078 Floppy Disk Controller Core — Two 16550 Compatible UARTs — One Multi-Function Parallel Port

Contextual Info: CY2304NZ Four Output PCI-X and General Purpose Buffer Four Output PCI-X and General Purpose Buffer Features Functional Description • One input to four output buffer/driver The CY2304NZ is a low-cost buffer designed to distribute high-speed clocks for PCI-X and other applications. The device

74HC00 SN74HC00D 74HC Series IC

Abstract: 74hc00t quad 74HC04 NOT GATE datasheet 74hc08m 74HC00M 74HC08T 74hc04n TI 74HC00 74hc00 datasheet 74HC04 Toshiba
Contextual Info: 74ABT & 74HC Standard Logic, T.I. & Others Thousands of new ICs are in the pipeline for addition and not shown below. Call us to see if you can save 10-30%. Semiconductors 74ABTXXX CMOS Logic Competitive Cross Reference Guide Family ABT Package DIP SOIC TI

TIP 3771

Abstract: 3771 E1 3771 8 pin ic
Contextual Info: LOW PO W ER 3V C M O S S R A M 1 M EG 64Kx 16-BIT ADVANCE INFORMATION IDT71L016 In te g ra te d D e v iz e T e c h n o lo g y , l i e . FEATURES: • 64K x 16 Organization • Wide Operating Voltage Range: 2.7V to 3.6V • Commercial (0° to 70°C) and Industrial (-40° to 85°C)

marking BR

Abstract: 2SB709A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB709A SOT-23 TRANSISTOR PNP 1. BASE 2. EMITTER 3. COLLECTOR FEATURES W (Tamb=25℃) 2. 4 1. 3 0. 95 0. 4 2. 9 Collector current -0.2 A ICM: Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1309A TRANSISTOR PNP TO-92S FEATURES Power dissipation 1. EMITTER PCM : 0.3 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO : -60

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1309A TO – 92S TRANSISTOR PNP 1. EMITTER FEATURES z High Forward Current Transfer Ratio hFE. z Allowing Supply with the Radial Taping. z Optimum for High-density Mounting.

NPN 2sC1685

Abstract: 2SC1685 R 2SC1685 2SC1684 2SCI685 2SC1684 R 2SC1684 Q 290A 2SCI684 2SC1685 Q
Contextual Info: 2SC1684, 2SC1685 2SC1684, 2SC1685 '> ij 3 > NPN x fcf£ + '> 7, ;U7?U'— NPN Epitaxial Planar —JK ^iiSffl/G en eral Amplifier • # ^ /F e a tu re s • fii^ rL iiiP S ^ hFE ^ ¡f t v ^ / H i g h hFE • 3> ? ^ i ?mwm± V - 7 / Low V CE sat cE (sat)

NS250H

Abstract: NS160H NSX100H Schneider NSX 400 F NS100N NS100H MA NS250N NSX100 NS160N NSX100F
Contextual Info: Low Voltage Compact NSX100 to 630 Circuit breakers and switch-disconnectors Substitution guide - Technical characteristics 2010 Substitution guide Technical characteristics Performance levels and trip units 2 Compact NS100/160/250 Compact NSX100/160/250 Compact NS400/630

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

sot 23 transistor

Contextual Info: 2SB709A SOT-23 Transistor PNP 1. BASE 2. EMITTER 3. COLLECTOR SOT-23 Features — For general amplification — Complementary to 2SD601A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -45 V VCEO Collector-Emitter Voltage

2SB1218AW

Abstract: 2SD1819A marking BQ 4
Contextual Info: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES z High forward current transfer ratio hFE z Excellent HFE Linearity. z Complements the 2SD1819A. 2SB1218AW Pb Lead-free APPLICATIONS z For general purpose amplification.

"Tape drive"

Contextual Info: 82091AA APPENDIX A FDC FOUR DRIVE SUPPORT Section 8.0 of this docum ent com pletely describes the FDC when the m odule is configured for two drive support. In addition, the FDC com m ands in Section 8.0 provide four drive support inform ation. This appendix

INTEL386SLMicroprocessor

Abstract: 386SL "Tape drive"
Contextual Info: intei 82078 CHMOS SINGLE-CHIP FLOPPY DISK CONTROLLER • Small Footprint and Low Height Packages ■ Supports Standard 5.0V as Well as Low Voltage 3.3V Platforms — Selectable 3.3V and 5.0V Configuration — 5.0V Tolerant Drive Interface ■ Enhanced Power Management

INTEL I7 microprocessor circuit diagram

Abstract: burndy ms 8255 intel microprocessor architecture burndy N28F020
Contextual Info: in t e i, ¡SM002FLKA 2 MBYTE 1024K x 16 CMOS FLASH SIMM • High-Performance — 150 ns Maximum Access Time — 13.3 M B/s Read Transfer Rate ■ Standard 80-Pln Insertable Module — 0.050 Centerline Lead Spacing — Upgrade Path through 128M bytes ■ 10,000 Rewrite Cycles Minimum/

Contextual Info: in t e i, ÌSM002FLKA 2 MBYTE 1024K x 16 CMOS FLASH SIMM • High-Performance — 150 ns Maximum Access Time — 13.3 MB/s Read Transfer Rate ■ 10,000 Rewrite Cycles Minimum/ Component ■ Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ 16 fis Typical Word Write

Contextual Info: A E W A K K S l OM F [K}[ì M T O K ] i n t e 1 ÌFX740 10 ns FLEXIogic FPGA WITH SRAM OPTION High Performance FPGA (Field Programmable Gate Array — Deterministic 10 ns Pin-to-Pin Propagation Delays — 80 MHz System Clock Frequency 2,500 Equivalent Logic Gates or up to

Contextual Info: Ä P Ä M g l D K 1 IF K 1 M 1 Ä T 0 ® M in te i ÌFX8160 10 ns FLEXIogic FPGA WITH SRAM OPTION High Performance FPGA Field Programmable Gate Array — Deterministic 10 ns Pin-to-Pin Propagation Delays — 80 MHz System Clock Frequency Electrically Erasable 0.6p, ETOX* IV

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SB709A TRANSISTOR PNP FEATURES Power dissipation PCM: 0.2 1. BASE 2. EMITTER 3. COLLECTOR W (Tamb=25℃) Collector current ICM: -0.1 A Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SB1218A TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES Power dissipation 150 PCM: 1.25±0.05 1.01 REF 3. COLLECTOR mW (Tamb=25℃) 0.30 1.30±0.03 Collector current

2SB1218A

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SOT-323 2SB1218A TRANSISTOR PNP 1. BASE 2. EMITTER FEATURES Power dissipation PCM: 1. 25¡ À0. 05 1. 01 REF 3. COLLECTOR 150 mW (Tamb=25℃) 0. 30 1. 30¡ À0. 03

Contextual Info: 2381 640 10. Vishay BCcomponents NTC Thermistors, Special Accuracy FEATURES • • • • Excellent accuracy between 25 °C and 85 °C High stability over a long life. Old part number was 2322 640 10. Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC