Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    290A TRANSISTOR Search Results

    290A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    290A TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRF P-Channel FET 100v

    Abstract: 68A diode IR 200V P-Channel fets k 68a irf P-Channel MOSFET audio IRFG5210 4.5v to 100v input regulator
    Text: Preliminary Data Sheet No. PD - 9.1664 HEXFET TRANSISTORS IRFG5210 COMBINATION N AND P CHANNEL 2 EACH Ω (N and P channel ) HEXFET 200 Volt, 1.60Ω Product Summary The HEXFET technology is the key to International Rectifier’s Part Number advanced line of power MOSFET transistors. The efficient


    Original     		PDF IRFG5210 MO-036AB IRF P-Channel FET 100v 68A diode IR 200V P-Channel fets k 68a irf P-Channel MOSFET audio IRFG5210 4.5v to 100v input regulator

    Untitled

    Abstract: No abstract text available
    Text: PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE MO-036AB HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG5210 IRFG5210 RDS(on) 1.6Ω 1.6Ω ID 0.68A -0.68A CHANNEL N P HEXFET® MOSFET technology is the key to International


    Original     		PDF 91664B IRFG5210 MO-036AB) 276mH, 475mH, -200V, MO-036AB

    68A diode

    Abstract: MJ 68A IRFG5210 MO-036AB 4.5v to 100v input regulator
    Text: PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE MO-036AB HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFG5210 IRFG5210 RDS(on) 1.6Ω 1.6Ω ID 0.68A -0.68A CHANNEL N P HEXFET® MOSFET technology is the key to International


    Original     		PDF 91664B IRFG5210 MO-036AB) 276mH, 475mH, -200V, MO-036AB 68A diode MJ 68A IRFG5210 MO-036AB 4.5v to 100v input regulator

    123AP

    Abstract: NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130
    Text: NTE Electronics Transistors Bi-Polar Transistors Ñ Continued Stock No. Mfr.Õs Type Polarity and Material Description and Application 935-0755 935-0760 935-0840 935-0841 935-0845 935-0855 107 108 123A 123AP 124 126 NPN-Si NPN-Si NPN-Si NPN-Si NPN-Si PNP-Ge


    Original     		PDF 123AP NTE159) NTE396) NTE375) NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130

    STS11NF30L

    Abstract: No abstract text available
    Text: STS11NF30L N-CHANNEL 30V - 0.009 Ω - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET TYPE STS11NF30L • ■ ■ ■ VDSS RDS on ID 30 V <0.012 Ω 11 A TYPICAL RDS(on) = 0.009Ω @ 10 V TYPICAL Qg = 19nC @ 4.5 V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED


    Original     		PDF STS11NF30L STS11NF30L

    Untitled

    Abstract: No abstract text available
    Text: STS11NF30L N-CHANNEL 30V - 0.009 Ω - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET TYPE STS11NF30L • ■ ■ ■ VDSS RDS on ID 30 V <0.012 Ω 11 A TYPICAL RDS(on) = 0.009Ω @ 10 V TYPICAL Qg = 19nC @ 4.5 V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED


    Original     		PDF STS11NF30L

    Untitled

    Abstract: No abstract text available
    Text: STS11NF30L N-CHANNEL 30V - 0.009 Ω - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET TYPE STS11NF30L • ■ ■ ■ VDSS RDS on ID 30 V <0.012 Ω 11 A TYPICAL RDS(on) = 0.009Ω @ 10 V TYPICAL Qg = 19nC @ 4.5 V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED


    Original     		PDF STS11NF30L

    STS11NF30L

    Abstract: No abstract text available
    Text: STS11NF30L N-CHANNEL 30V - 0.009 Ω - 11A SO-8 LOW GATE CHARGE STripFET POWER MOSFET TYPE STS11NF30L • ■ ■ ■ VDSS RDS on ID 30 V <0.012 Ω 11 A TYPICAL RDS(on) = 0.009Ω @ 10 V TYPICAL Qg = 19nC @ 4.5 V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED


    Original     		PDF STS11NF30L STS11NF30L

    STP70NF03L

    Abstract: d46a
    Text: STP70NF03L N-CHANNEL 30V - 0.008Ω - 70A TO-220 LOW GATE CHARGE STripFET POWER MOSFET TYPE STP70NF03L • ■ ■ ■ ■ VDSS RDS on ID 30 V <0.01 Ω 70 A TYPICAL RDS(on) = 0.008 Ω TYPICAL Qg = 35 nC @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED


    Original     		PDF STP70NF03L O-220 STP70NF03L d46a

    290A transistor

    Abstract: No abstract text available
    Text: STP70NF03L N-CHANNEL 30V - 0.008Ω - 70A TO-220 LOW GATE CHARGE STripFET POWER MOSFET TYPE STP70NF03L • ■ ■ ■ ■ VDSS RDS on ID 30 V < 0.01 Ω 70 A TYPICAL RDS(on) = 0.008 Ω TYPICAL Qg = 35 nC @ 10 V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED


    Original     		PDF STP70NF03L O-220 290A transistor

    STB70NF03L-1

    Abstract: STP70NF03L
    Text: STP70NF03L STB70NF03L-1 N-CHANNEL 30V - 0.008Ω - 70A TO-220/I2PAK LOW GATE CHARGE STripFET POWER MOSFET TYPE STP70NF03L STB70NF03L-1 • ■ ■ ■ ■ VDSS RDS on ID 30 V 30 V < 0.01 Ω < 0.01 Ω 70 A 70 A TYPICAL RDS(on) = 0.008 Ω TYPICAL Qg = 35 nC @ 10 V


    Original     		PDF STP70NF03L STB70NF03L-1 O-220/I2PAK STB70NF03L-1 STP70NF03L

    Untitled

    Abstract: No abstract text available
    Text: STB70NF03L N-CHANNEL 30V - 0.008Ω - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET TYPE STB70NF03L • ■ ■ ■ ■ ■ VDSS RDS on ID 30 V < 0.01 Ω 70 A TYPICAL RDS(on) = 0.008Ω TYPICAL Qg= 35 nC @10V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED


    Original     		PDF STB70NF03L

    STB70NF03L-1

    Abstract: STP70NF03L
    Text: STP70NF03L STB70NF03L-1 N-CHANNEL 30V - 0.008Ω - 70A TO-220/I2PAK LOW GATE CHARGE STripFET POWER MOSFET TYPE STP70NF03L STB70NF03L-1 • ■ ■ ■ ■ VDSS RDS on ID 30 V 30 V < 0.01 Ω < 0.01 Ω 70 A 70 A TYPICAL RDS(on) = 0.008 Ω TYPICAL Qg = 35 nC @ 10 V


    Original     		PDF STP70NF03L STB70NF03L-1 O-220/I2PAK STB70NF03L-1 STP70NF03L

    BR 0137

    Abstract: STB70NF03L
    Text: STB70NF03L N-CHANNEL 30V - 0.008Ω - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET TYPE STB70NF03L • ■ ■ ■ ■ ■ VDSS RDS on ID 30 V < 0.01 Ω 70 A TYPICAL RDS(on) = 0.008Ω TYPICAL Qg= 35 nC @10V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED


    Original     		PDF STB70NF03L BR 0137 STB70NF03L

    Untitled

    Abstract: No abstract text available
    Text: STB70NF03L N-CHANNEL 30V - 0.008Ω - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET TYPE STB70NF03L • ■ ■ ■ ■ ■ VDSS RDS on ID 30 V < 0.01 Ω 70 A TYPICAL RDS(on) = 0.008Ω TYPICAL Qg= 35 nC @10V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED


    Original     		PDF STB70NF03L

    STB70NF03L

    Abstract: No abstract text available
    Text: STB70NF03L N-CHANNEL 30V - 0.008Ω - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET TYPE STB70NF03L • ■ ■ ■ ■ VDSS RDS on ID 30 V <0.01 Ω 70 A TYPICAL RDS(on) = 0.008 Ω TYPICAL Qg = 35 nC @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED


    Original     		PDF STB70NF03L O-263 STB70NF03L

    S1470

    Abstract: STB70NF03L
    Text: STB70NF03L N-CHANNEL 30V - 0.008Ω - 70A D2PAK LOW GATE CHARGE STripFET POWER MOSFET TYPE STB70NF03L • ■ ■ ■ ■ VDSS RDS on ID 30 V <0.01 Ω 70 A TYPICAL RDS(on) = 0.008 Ω TYPICAL Qg = 35 nC @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF CONDUCTION LOSSES REDUCED


    Original     		PDF STB70NF03L O-263 S1470 STB70NF03L

    eg-1w

    Abstract: No abstract text available
    Text: Preliminary Data Sheet No. PD - 9.1664 International I R Rectifier H EXFET TRANSISTORS IRFG5210 3D COMBINATION N AND P CHANNEL 2 EACH 200 Volt, 1.60£2 (N and P channel ) H EXFET _ O D £ d\ G y iP y ¿ s is Product Summary The HEXFET technology is the key to International Rectifier’s P art N u m b e r


    OCR Scan     		PDF IRFG5210 eg-1w

    nte280

    Abstract: nte291
    Text: BI-POL AR TRANSISTORS NTE Type Number Polarity and Material Description and Application 275 PNP-Si 278 NPN-Si 280 NPN-Si 280MP NPN-Si PNP-Si Darlington Pwr Amp Switch Compl to NTE274 Broad Band RF Amp, CATV/MATV Amp Audio Amp Output (Compl to NTE281) Matched Pair of NTE280


    OCR Scan     		PDF 280MP NTE274) NTE281) NTE280 284MP 281MCP NTE291) 292MCP NTE292 NTE291 nte280 nte291

    SK3004

    Abstract: SK3052 SK3036 SK3018 SK3027/130 SK3115/165 SK3025/129 SK3006 SK3027 SK3024
    Text: Bipolar Transistors LIMIT CONDITIONS CHARACTERISTICS BREAKDOWN VOLTAGE RCA .Type , Device Dissi­ pation Polarity and Material Pt W — -2. . — -2 — Collector to Emitter Vmo y VCfO V Vbo V -30 -32 -25 -32 -34 -12 -25 -18 -16 -15 -5 -12 -23 " -10 -0.5 Typical Current


    OCR Scan     		PDF SK3003A/126A T-008 SK3004/102A T-004 SK3006/160 T-001 SK3007A SK3008 -SK3114A/290A SK3004 SK3052 SK3036 SK3018 SK3027/130 SK3115/165 SK3025/129 SK3006 SK3027 SK3024

    sk3018

    Abstract: SK3027/130 SK3083 SK3024 SK3004 SK3004/102A SK3012/105 sk3123 SK3115/165 SK3115
    Text: THOMSON/ DISTRIBUTOR DTE D | =]GEbfl73 □QG33bl 3 | . T ' 2 1 -O l PERFORMANCE DATA 3ipolar Transistors LIM IT C O NDITIONS CH AR ACTER ISTIC S BR EA KD O W N V O LT A G E RCA Typ« Polarity and : Material Device Dissi­ pation Collector Current Contin­


    OCR Scan     		PDF GEbfl73 QG33bl T-21-OÃ SK3003A/126A T-008 SK3004/102A T-004 SK3006/160 T-001 SK3007A sk3018 SK3027/130 SK3083 SK3024 SK3004 SK3012/105 sk3123 SK3115/165 SK3115

    RCA SK3020

    Abstract: sk3006 rca sk3004 SK3004/102A SK3012 SK3024 SK3054 SK3018 SK3083 SK3027/130
    Text: J7484 3 9 6 R C A I CORP* DISTRIBUTOR D JT— -f 3*• 66C 02740 £ T U * D e ]| 740 43^ t, DOGS? IR C A CORP/ DISTRIBUTOR & 4D ä PERFORMANCE DATA 3ipolar Transistors LIMIT CONDITIONS CHARACTERISTICS BREAKDOWN VOLTAGE RCA .Type , Device Dissi­ pation Polarity


    OCR Scan     		PDF J7484396 SK3003A/12SA T-008 SK3004/102A T-004 SK3006/160 900MIN T-005 T-007 RCA SK3020 sk3006 rca sk3004 SK3012 SK3024 SK3054 SK3018 SK3083 SK3027/130

    CMJB

    Abstract: Siliconix JFETs Dual DG281AP DG284AP DG287BP DG287AP DG28 CMJ-B DG281BA DG281AA
    Text: B Siliconix B E N E F IT S • • Low Error Sam ple and Hold Circuits ■ 100 MHz Signal Switching w ith High OFF Isolation ■ P resettab le Integrators w ith Minimum O ffset Error ■ Low Distortion Click Free Audio Switching Minimum Signal Errors o Low Charge Feedthrough 7 Picocoulombs


    OCR Scan     		PDF DG281 CMJB Siliconix JFETs Dual DG281AP DG284AP DG287BP DG287AP DG28 CMJ-B DG281BA DG281AA

    diode ux

    Abstract: No abstract text available
    Text: 16-Channel/Dual 8-Channel JFET Analog Multiplexers Overvoltage Protected MUX-16/MUX-28 ANALOG DEVICES FEATURES GENERAL D ES C R IP TIO N • • • • • • • • • • • • • The MUX-16 is a m onolithic 16-channel analog m ultiplexer which connects a single output to 1 of the 16 analog inputs


    OCR Scan     		PDF 16-Channel/Dual MUX-16/MUX-28 MUX-16 16-channel diode ux