292095 Search Results

Contextual Info: I P ^ iU ö Ä Ä f in te i 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Very High-Performance Read — 85 ns Maximum Access Time

Contextual Info: P R is y iif iiO K iÆ in r in ie l VE28F008 8 MBIT (1 MBIT x 8 FLASH MEMORY • High-Density Symmetrically Blocked Architecture — Sixteen 64 Kbyte Blocks Very High-Performance Read — 95 ns Maximum Access Time ■ Avionics Temperature Range 40°C to + 125°C

intel i3 mtbf

Abstract: PA28F0085A-120 28F008SA E0000 E28F008SA intel PLD 29041 E28F008SA-120 PA28F0085A ER27
Contextual Info: INTEL CORP MEMORY/PL] / 5 bE ]) m MfliblTb D0 7 b4f l ö TTb • ITL2 ß fö iy ilO I M G W in y 28F008SA 8 MBIT (1 MBIT x 8) FLASH MEMORY 3 zç. ■ Hlgh-Density Symmetrically Blocked Architecture — Sixteen 64 KByte Blocks Very High-Performance Read — 85 ns Maximum Access Time

6361A

Contextual Info: in te l 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F I L E t m MEMORY High-Performance Read — 200 ns Maximum Access Time High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Deep Power-Down Mode — 0.20 juA Ice Typical Low-Voltage Operation

Intel i7 MTBF

Contextual Info: in te l 28F008SA 8-MBIT 1-MBIT x 8 F la s h F ile T M MEMORY Extended Temperature Specifications Included High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100,000 Block Erase Cycles — 1.6 Million Block Erase

TB28F008SA-100

Abstract: psop 44 of PA28F008SA 28F008SA E0000 28F008SA 8-Mbit FlashFile Memory E28F008SA-120 SmartDie intel386sl
Contextual Info: 28F008SA 8-MBIT 1-MBIT x 8 FlashFile TM MEMORY Extended Temperature Specifications Included Y High-Density Symmetrically-Blocked Architecture Sixteen 64-Kbyte Blocks Y Extended Cycling Capability 100 000 Block Erase Cycles 1 6 Million Block Erase Cycles per Chip

AP-364

Abstract: AP-316 AP-325 AP-360 PO15 AP364
Contextual Info: AP-624 APPLICATION NOTE Introduction to On-Board Programming with Intel Flash Memory November 1996 Order Number: 292179-002 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of

electrical engineering projects

Abstract: 40 pin flash programmer circuit Automated Guided Vehicles project Flash LINK JTAG driver "Flash Memory" AT 49 292077 ap-325 ic tms 1000 INTEL FLASH MEMORY DATA SHEET 28F008SA
Contextual Info: E AP-624 APPLICATION NOTE Introduction to On-Board Programming with Intel Flash Memory PETER T. LARSEN TECHNICAL MARKETING ENGINEER February 1996 Order Number: 292179-001 Information in this document is provided in connection with Intel products. Intel assumes no liability whatsoever, including

E28F008SA-120

Abstract: E28F008SA
Contextual Info: inlel 28F008SA 8 MBIT 1 MBIT x 8 FLASH MEMORY Hlgh-Denslty Symmetrically Blocked Architecture — Sixteen 64 KByte Blocks Very High-Performance Read — 85 ns Maximum Access Time SRAM-Compatible Write Interface Extended Cycling Capability — 100,000 Block Erase Cycles

29041

Contextual Info: [p fö iy ß iiM ö w in te i VE28F008 8 MBIT 1 MBIT x 8 FLASH MEMORY High-Density Symmetrically Blocked Architecture — Sixteen 64 Kbyte Blocks Avionics Temperature Range 40°C to + 125°C Extended Cycling Capability — 10K Block Erase Cycles — 160K Block Erase

Contextual Info: in te l ADVANCE INFORMATION VALUE SERIES 100 FLASH MEMORY CARD 2-,4-,8-MEGABYTE ¡MC002FLSC, ¡MC004FLSC, ¡MC008FLSC • Low-Cost Linear Flash Card ■ Single Supply: 5 Volt Operation ■ FAST Read Performance — 100 ns Maximum Access Time ■ Automated Write and Erase Algorithms

Contextual Info: ADVANCE INFORMATION 28F008SA 8 MBIT 1 MBIT x 8 FLASHFILE MEMORY High-Density Sym m etrically Blocked Architecture — Sixteen 64 KByte Blocks • Very High-Performance Read — 85/90/120 ns Maximum Access Time ■ SRAM-Com patible W rite Interface Extended Cycling Capability

Contextual Info: in te l 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F IL E T M MEMORY High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Low-Voltage Operation 3.3V ±0.3V or 5.0V ±10% Vcc Extended Cycling Capability — 10,000 Block Erase Cycles — 160,000 Block Erase

Contextual Info: in te i 28F008SA 8-MBIT 1-MBIT x 8 FLASH MEMORY SmartDle Product Specification High-Density Symmetrically Blocked Architecture — Sixteen 64-Kbyte Blocks Extended Cycling Capability — 100K Block Erase Cycles — 1.6M Block Erase Cycles per Chip Automated Byte Write and Block Erase

SM 1-12H

Abstract: 29057 29058 1008HA 16EH00
Contextual Info: ADVANCE INFORMATION SERIES 100 FLASH MEMORY MINIATURE CARD Ì F M 0 0 2 A , ÌF M 0 0 4 A • Low-Cost Linear Flash Card ■ Miniature Card Specification Compliant ■ Single Supply SmartVoltage Operation — 5V or 3.3V Read/Write ■ Fast Read Performance

intel 27123

Abstract: 29043 intel motherboard 915 CIRCUIT diagram M28F008SA
Contextual Info: ß ff llE U B lß O M y in te i M28F008SA 8 MBIT 1 MBIT x 8 FLASH MEMORY High-Density Symmetrically Blocked Architecture — Sixteen 64 Kbyte Blocks Very High-Performance Read — 120 ns Maximum Access Time Extended Cycling Capability — 10K Block Erase Cycles

cpu jtag

Abstract: AP-316 AP-316, Using Flash Memory for In-System corelis JTAG CONNECTOR Flash LINK JTAG driver AP-325 AP-360 PO15 teradyne tester test system bios guide
Contextual Info: AP-624 APPLICATION NOTE Introduction to On-Board Programming with Intel Flash Memory November 1996 Order Number: 292179-002 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of

AP-362

Abstract: AP-360 28F016SA 292124 56Ld-TSOP 297372 28F016SA Users Manual 28F008SA 28F008SA-Compatible 56L-TSOP
Contextual Info: AP-375 APPLICATION NOTE Upgrade Considerations from the 28F008SA to the 28F016SA SALIM FEDEL FLASH MEMORY APPLICATIONS ENGINEERING December 1995 Order Number 292124-001 Information in this document is provided in connection with Intel products Intel assumes no liability whatsoever including infringement of any patent or copyright for sale and use of Intel products except as provided in

MC002FLSA

Abstract: MC004FLSA 290399 Ebl75 29038 29039
Contextual Info: P R lU R ilD K lA fty * SERIES 2 FLASH MEMORY CARDS ¡MC002FLSA, ¡MC004FLSA, iMCOIOFLSA, ¡MC020FLSA Extended Temperature Specifications Included • 2, 4, 10 and 20 Megabyte Capacities ■ PCMCIA 2.1/JEIDA 4.1 68-Pin Standard — Hardwired Card Information

297372

Abstract: 40L-TSOP 28F016SA 292124-001 28F008SA
Contextual Info: intel. A p -3 7 5 APPLICATION NOTE Upgrade Considerations from the 28F008SA to the 28F016SA SALIM FEDEL FLASH MEMORY APPLICATIONS ENGINEERING October 1993 Order Number: 292124-001 I Intel Corporation m akes no warranty for the use of its products and assum es no responsibility for any errors

Contextual Info: in te i M28F008 8 MBIT 1 MBIT x 8 FLASH MEMORY High-Density Symmetrically Blocked Architecture — Sixteen 64 Kbyte Blocks Extended Cycling Capability — 10K Block Erase Cycles Minimum — 160K Block Erase Cycles per Chip Automated Byte Write and Block Erase

MC010FLSA

Abstract: ah41 29038 5050H IT85
Contextual Info: P R lU B lK IA H y SERIES 2 FLASH MEMORY CARDS ¡MC002FLSA, ¡MC004FLSA, ¡MC010FLSA, ¡MC020FLSA Extended Temperature Specifications Included • 2, 4, 10 and 20 Megabyte Capacities ■ PCMCIA 2.1/JEIDA 4.1 68-Pin Standard — Hardwired Card Information Structure

29043

Abstract: PPD 3503
Contextual Info: intei A Ë > m M ! D M F @ IB IiM irD @ M ] 28F008SA-L 8-MBIT 1 MBIT x 8 F L A S H F I L E t m MEMORY • High-Density Symmetrically Blocked Architecture — Sixteen 64-K byte Blocks ■ Low -Voltage Operation 3.3V + 0 .3 V or 5.0V ± 10% Vc c ■ Extended Cycling Capability

ana 608

Abstract: E0000 M28F008
Contextual Info: M28F008 8 MBIT 1 MBIT x 8 FLASH MEMORY Y High-Density Symmetrically Blocked Architecture Sixteen 64 Kbyte Blocks Y Extended Cycling Capability 10K Block Erase Cycles Minimum 160K Block Erase Cycles per Chip Y Automated Byte Write and Block Erase Command User Interface