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    2950 MOUNTING BLOCK Search Results

    2950 MOUNTING BLOCK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd

    2950 MOUNTING BLOCK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    byw 150

    Abstract: No abstract text available
    Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time ITO-220AC TO-220AC • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series


    Original     		PDF O-220AC ITO-220AC J-STD-020C, O-263AB O-220AC ITO-220AC 2002/95/EC 2002/96/EC O-220AC, ITO-220AC, byw 150

    byw 150

    Abstract: diode byw 81 200 diode BYW 66 BYW29 JESD22-B102D J-STD-002B
    Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time ITO-220AC TO-220AC • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series


    Original     		PDF ITO-220AC O-220AC BYW29 J-STD-020C, O-263AB ITO-220AC 2002/95/EC 2002/96/EC BYWF29 byw 150 diode byw 81 200 diode BYW 66 JESD22-B102D J-STD-002B

    byw 04-15

    Abstract: BYW29 JESD22-B102D J-STD-002B byw 91-4
    Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction ITO-220AC TO-220AC • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series


    Original     		PDF ITO-220AC O-220AC BYW29 O-263AB BYWF29 O-263AB BYWB29 2002/95/EC 2002/96/EC J-STD-020C byw 04-15 JESD22-B102D J-STD-002B byw 91-4

    byw 91-4

    Abstract: BYW series byw29
    Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF O-220AC ITO-220AC BYW29 BYWF29 O-263AB J-STD-020C, ITO-220AC 2002/95/EC byw 91-4 BYW series

    Untitled

    Abstract: No abstract text available
    Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF O-220AC ITO-220AC BYW29 BYWF29 O-263AB J-STD-020, ITO-220AC 2002/95/EC

    diode BYW 66

    Abstract: BYW29 JESD22-B102 J-STD-002 BYW29-200-E3 byw 91-4
    Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF J-STD-020, O-263AB O-220AC ITO-220AC 2002/95/EC 2002/96/EC ITO-220AC O-220AC BYW29 BYWF29 diode BYW 66 JESD22-B102 J-STD-002 BYW29-200-E3 byw 91-4

    BYW29

    Abstract: JESD22-B102 J-STD-002
    Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF J-STD-020, O-263AB O-220AC ITO-220AC 2002/95/EC 2002/96/EC ITO-220AC O-220AC BYW29 BYWF29 JESD22-B102 J-STD-002

    BYW295

    Abstract: No abstract text available
    Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF O-220AC ITO-220AC BYW29 BYWF29 O-263AB J-STD-020, ITO-220AC 2002/95/EC BYW295

    Untitled

    Abstract: No abstract text available
    Text: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF J-STD-020, O-263AB O-220AC ITO-220AC 2002/95/EC 2002/96/EC ITO-220AC O-220AC BYW29 BYWF29

    Untitled

    Abstract: No abstract text available
    Text: VBO 88 IdAV = 92 A VRRM = 800-1600 V Single Phase Rectiier Bridge in ECO-PAC 2 Preliminary data VRSM V 900 1300 1700 VRRM V 800 1200 1600 Type PS 16 VBO 88-08NO7 VBO 88-12NO7 VBO 88-16NO7 ~L 9 ~K 10 EG 1 Symbol Conditions IdAV j TC = 100°C, module IFSM TVJ = 45°C;


    Original     		PDF 88-08NO7 88-12NO7 88-16NO7 20100706b

    Untitled

    Abstract: No abstract text available
    Text: VBO 88 Single Phase Rectifier Bridge IdAV = 92 A VRRM = 800-1600 V in ECO-PAC 2 Preliminary data VRSM V 900 1300 1700 VRRM V 800 1200 1600 Type PS 16 VBO 88-08NO7 VBO 88-12NO7 VBO 88-16NO7 ~L 9 ~K 10 EG 1 Symbol Conditions IdAV j TC = 100°C, module IFSM TVJ = 45°C;


    Original     		PDF 88-08NO7 88-12NO7 88-16NO7 20100706b

    Untitled

    Abstract: No abstract text available
    Text: VBO 88 Three Phase Rectifier Bridge IdAV = 92 A VRRM = 800-1600 V in ECO-PAC 2 Preliminary data VRSM VDSM VRRM VDRM V 900 1300 1500 1700 V 800 1200 1400 1600 Type PS 16 Symbol Conditions IdAV j TC = 100°C, module IFSM TVJ = 45°C; VR = 0 I2t ~L 9 ~K 10 VBO 88-08NO7


    Original     		PDF 00-1600V 88-08NO7 88-12NO7 88-14NO7 88-16NO7 20090317a

    Untitled

    Abstract: No abstract text available
    Text: VBO 88 Single Phase Rectifier Bridge IdAV = 92 A VRRM = 800-1600 V in ECO-PAC 2 Preliminary data VRSM V 900 1300 1700 VRRM V 800 1200 1600 Type PS 16 VBO 88-08NO7 VBO 88-12NO7 VBO 88-16NO7 ~L 9 ~K 10 EG 1 Symbol Conditions IdAV j TC = 100°C, module IFSM TVJ = 45°C;


    Original     		PDF 00-1600V 88-08NO7 88-12NO7 88-16NO7 20100706b

    Untitled

    Abstract: No abstract text available
    Text: VBO 88 Single Phase Rectifier Bridge IdAV = 92 A VRRM = 800-1600 V in ECO-PAC 2 Preliminary data VRSM VDSM VRRM VDRM V 900 1300 1500 1700 V 800 1200 1400 1600 Type PS 16 Symbol Conditions IdAV j TC = 100°C, module IFSM TVJ = 45°C; VR = 0 I2t ~L 9 ~K 10 VBO 88-08NO7


    Original     		PDF 00-1600V 88-08NO7 88-12NO7 88-14NO7 88-16NO7 20090317a

    Untitled

    Abstract: No abstract text available
    Text: VUO 122 Three Phase Rectifier Bridge IdAV = 117 A VRRM = 800-1600 V in ECO-PAC 2 Preliminary data VRSM VDSM VRRM VDRM V 900 1300 1500 1700 V 800 1200 1400 1600 Type PS 16 ~A 1 ~L 9 ~K 10 VUO 122-08NO7 VUO 122-12NO7 VUO 122-14NO7 VUO 122-16NO7 EG 1 Symbol Conditions


    Original     		PDF 00-1600V 122-08NO7 122-12NO7 122-14NO7 122-16NO7 12age 20090317a

    1x100

    Abstract: No abstract text available
    Text: Phone: +39-010-659 1869 Fax: +39-010-659 1870 Web: www.gpsemi.it E-mail: info@gpsemi.it Green Power Solutions srl Via Greto di Cornigliano 6R - 16152 Genova , Italy GXV SURGE VOLTAGE SUPPRESSORS Pnp diffused silicon structure Symmetric blocking characteristics


    Original     		PDF 1x100 GXV20050-04 GXV20050-05 GXV21038-06 GXV22020 GXV20050) GXV24020 GXV22030 GXVT002 1x100

    Untitled

    Abstract: No abstract text available
    Text: AM1 The Communications Edge High Dynamic Range Gain Block Product Features Product Description Functional Diagram The AM1 is a general purpose gain block that • 250-3000 MHz Bandwidth 4 offers good dynamic range in a low cost surface 37 dBm Output IP3


    Original     		PDF broad14 OT-89 1-800-WJ1-4401

    Untitled

    Abstract: No abstract text available
    Text: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 250-3000 MHz Bandwidth • +37 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTBF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description


    Original     		PDF OT-89 1-800-WJ1-4401

    Untitled

    Abstract: No abstract text available
    Text: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 250-3000 MHz Bandwidth • +37 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTBF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description


    Original     		PDF OT-89 1-800-WJ1-4401

    pin configuration of 4081

    Abstract: No abstract text available
    Text: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 60-3000 MHz Bandwidth • +37 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTBF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description


    Original     		PDF OT-89 Diag76 1-800-WJ1-4401 pin configuration of 4081

    Untitled

    Abstract: No abstract text available
    Text: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 60-3000 MHz Bandwidth • +37 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTBF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description


    Original     		PDF OT-89 Diag76 1-800-WJ1-4401

    Untitled

    Abstract: No abstract text available
    Text: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 60-3000 MHz Bandwidth • +39 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTTF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description


    Original     		PDF OT-89 1-800-WJ1-4401

    Untitled

    Abstract: No abstract text available
    Text: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 60-3000 MHz Bandwidth • +39 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTTF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description


    Original     		PDF OT-89 Diag067 1-800-WJ1-4401

    Untitled

    Abstract: No abstract text available
    Text: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 60-3000 MHz Bandwidth • +37 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTBF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description


    Original     		PDF OT-89 Diag76 1-800-WJ1-4401