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    2950 MOUNTING BLOCK Search Results

    2950 MOUNTING BLOCK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX181BH1D
    Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX221SH1D
    Murata Manufacturing Co Ltd FB SMD 0402inch 220ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE601SH1L
    Murata Manufacturing Co Ltd FB SMD 0805inch 600ohm POWRTRN Visit Murata Manufacturing Co Ltd
    DLW21SH670HQ2L
    Murata Manufacturing Co Ltd CMC SMD 67ohm 320mA POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX800BH1D
    Murata Manufacturing Co Ltd FB SMD 0402inch 80ohm POWRTRN Visit Murata Manufacturing Co Ltd

    2950 MOUNTING BLOCK Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    byw 150

    Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time ITO-220AC TO-220AC • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series


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    O-220AC ITO-220AC J-STD-020C, O-263AB O-220AC ITO-220AC 2002/95/EC 2002/96/EC O-220AC, ITO-220AC, byw 150 PDF

    byw 150

    Abstract: diode byw 81 200 diode BYW 66 BYW29 JESD22-B102D J-STD-002B
    Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time ITO-220AC TO-220AC • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series


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    ITO-220AC O-220AC BYW29 J-STD-020C, O-263AB ITO-220AC 2002/95/EC 2002/96/EC BYWF29 byw 150 diode byw 81 200 diode BYW 66 JESD22-B102D J-STD-002B PDF

    byw 04-15

    Abstract: BYW29 JESD22-B102D J-STD-002B byw 91-4
    Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction ITO-220AC TO-220AC • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop 2 BYW29 Series


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    ITO-220AC O-220AC BYW29 O-263AB BYWF29 O-263AB BYWB29 2002/95/EC 2002/96/EC J-STD-020C byw 04-15 JESD22-B102D J-STD-002B byw 91-4 PDF

    byw 91-4

    Abstract: BYW series byw29
    Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    O-220AC ITO-220AC BYW29 BYWF29 O-263AB J-STD-020C, ITO-220AC 2002/95/EC byw 91-4 BYW series PDF

    Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    O-220AC ITO-220AC BYW29 BYWF29 O-263AB J-STD-020, ITO-220AC 2002/95/EC PDF

    diode BYW 66

    Abstract: BYW29 JESD22-B102 J-STD-002 BYW29-200-E3 byw 91-4
    Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    J-STD-020, O-263AB O-220AC ITO-220AC 2002/95/EC 2002/96/EC ITO-220AC O-220AC BYW29 BYWF29 diode BYW 66 JESD22-B102 J-STD-002 BYW29-200-E3 byw 91-4 PDF

    BYW29

    Abstract: JESD22-B102 J-STD-002
    Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original
    J-STD-020, O-263AB O-220AC ITO-220AC 2002/95/EC 2002/96/EC ITO-220AC O-220AC BYW29 BYWF29 JESD22-B102 J-STD-002 PDF

    BYW295

    Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    O-220AC ITO-220AC BYW29 BYWF29 O-263AB J-STD-020, ITO-220AC 2002/95/EC BYW295 PDF

    Contextual Info: BYW F,B 29-50 thru BYW(F,B)29-200 Vishay General Semiconductor Ultrafast Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability


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    J-STD-020, O-263AB O-220AC ITO-220AC 2002/95/EC 2002/96/EC ITO-220AC O-220AC BYW29 BYWF29 PDF

    Contextual Info: VBO 88 IdAV = 92 A VRRM = 800-1600 V Single Phase Rectiier Bridge in ECO-PAC 2 Preliminary data VRSM V 900 1300 1700 VRRM V 800 1200 1600 Type PS 16 VBO 88-08NO7 VBO 88-12NO7 VBO 88-16NO7 ~L 9 ~K 10 EG 1 Symbol Conditions IdAV j TC = 100°C, module IFSM TVJ = 45°C;


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    88-08NO7 88-12NO7 88-16NO7 20100706b PDF

    Contextual Info: VBO 88 Single Phase Rectifier Bridge IdAV = 92 A VRRM = 800-1600 V in ECO-PAC 2 Preliminary data VRSM V 900 1300 1700 VRRM V 800 1200 1600 Type PS 16 VBO 88-08NO7 VBO 88-12NO7 VBO 88-16NO7 ~L 9 ~K 10 EG 1 Symbol Conditions IdAV j TC = 100°C, module IFSM TVJ = 45°C;


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    88-08NO7 88-12NO7 88-16NO7 20100706b PDF

    Contextual Info: VBO 88 Three Phase Rectifier Bridge IdAV = 92 A VRRM = 800-1600 V in ECO-PAC 2 Preliminary data VRSM VDSM VRRM VDRM V 900 1300 1500 1700 V 800 1200 1400 1600 Type PS 16 Symbol Conditions IdAV j TC = 100°C, module IFSM TVJ = 45°C; VR = 0 I2t ~L 9 ~K 10 VBO 88-08NO7


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    00-1600V 88-08NO7 88-12NO7 88-14NO7 88-16NO7 20090317a PDF

    Contextual Info: VBO 88 Single Phase Rectifier Bridge IdAV = 92 A VRRM = 800-1600 V in ECO-PAC 2 Preliminary data VRSM V 900 1300 1700 VRRM V 800 1200 1600 Type PS 16 VBO 88-08NO7 VBO 88-12NO7 VBO 88-16NO7 ~L 9 ~K 10 EG 1 Symbol Conditions IdAV j TC = 100°C, module IFSM TVJ = 45°C;


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    00-1600V 88-08NO7 88-12NO7 88-16NO7 20100706b PDF

    Contextual Info: VBO 88 Single Phase Rectifier Bridge IdAV = 92 A VRRM = 800-1600 V in ECO-PAC 2 Preliminary data VRSM VDSM VRRM VDRM V 900 1300 1500 1700 V 800 1200 1400 1600 Type PS 16 Symbol Conditions IdAV j TC = 100°C, module IFSM TVJ = 45°C; VR = 0 I2t ~L 9 ~K 10 VBO 88-08NO7


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    00-1600V 88-08NO7 88-12NO7 88-14NO7 88-16NO7 20090317a PDF

    Contextual Info: VUO 122 Three Phase Rectifier Bridge IdAV = 117 A VRRM = 800-1600 V in ECO-PAC 2 Preliminary data VRSM VDSM VRRM VDRM V 900 1300 1500 1700 V 800 1200 1400 1600 Type PS 16 ~A 1 ~L 9 ~K 10 VUO 122-08NO7 VUO 122-12NO7 VUO 122-14NO7 VUO 122-16NO7 EG 1 Symbol Conditions


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    00-1600V 122-08NO7 122-12NO7 122-14NO7 122-16NO7 12age 20090317a PDF

    1x100

    Contextual Info: Phone: +39-010-659 1869 Fax: +39-010-659 1870 Web: www.gpsemi.it E-mail: info@gpsemi.it Green Power Solutions srl Via Greto di Cornigliano 6R - 16152 Genova , Italy GXV SURGE VOLTAGE SUPPRESSORS Pnp diffused silicon structure Symmetric blocking characteristics


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    1x100 GXV20050-04 GXV20050-05 GXV21038-06 GXV22020 GXV20050) GXV24020 GXV22030 GXVT002 1x100 PDF

    Contextual Info: AM1 The Communications Edge High Dynamic Range Gain Block Product Features Product Description Functional Diagram The AM1 is a general purpose gain block that • 250-3000 MHz Bandwidth 4 offers good dynamic range in a low cost surface 37 dBm Output IP3


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    broad14 OT-89 1-800-WJ1-4401 PDF

    Contextual Info: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 250-3000 MHz Bandwidth • +37 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTBF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description


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    OT-89 1-800-WJ1-4401 PDF

    Contextual Info: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 250-3000 MHz Bandwidth • +37 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTBF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description


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    OT-89 1-800-WJ1-4401 PDF

    pin configuration of 4081

    Contextual Info: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 60-3000 MHz Bandwidth • +37 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTBF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description


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    OT-89 Diag76 1-800-WJ1-4401 pin configuration of 4081 PDF

    Contextual Info: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 60-3000 MHz Bandwidth • +37 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTBF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description


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    OT-89 Diag76 1-800-WJ1-4401 PDF

    Contextual Info: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 60-3000 MHz Bandwidth • +39 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTTF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description


    Original
    OT-89 1-800-WJ1-4401 PDF

    Contextual Info: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 60-3000 MHz Bandwidth • +39 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTTF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description


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    OT-89 Diag067 1-800-WJ1-4401 PDF

    Contextual Info: AM1 The Communications Edge High Dynamic Range Gain Block Product Features • 60-3000 MHz Bandwidth • +37 dBm Output IP3 • 2.4 dB Noise Figure • 14 dB Gain • +18 dBm P1dB • MTBF >100 Years • SOT-89 SMT Package • Single Bias Supply Product Description


    Original
    OT-89 Diag76 1-800-WJ1-4401 PDF