2955G DPAK Search Results

2955G DPAK Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TK6R9P08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK
TK5R1P08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK

2955G DPAK Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
nt 2955g Abstract: 2955g Contextual Info: NTD2955, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power	Original	NTD2955, NVD2955 NTD2955/D nt 2955g 2955g	PDF
nt2955g Abstract: nt 2955g 2955G Contextual Info: NTD2955, NTD2955P, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power	Original	NTD2955, NTD2955P, NVD2955 NTD2955/D nt2955g nt 2955g 2955G	PDF
2955g Abstract: nt 2955g nt2955g NTD2955 application note NTD2955G 2955G DPAK equivalent ntd2955 NTD2955-001 ntd2955t4g 369D Contextual Info: NTD2955, NTD2955P Power MOSFET -60 V, -12 A, P-Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low-voltage, highspeed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge	Original	NTD2955, NTD2955P NTD2955/D 2955g nt 2955g nt2955g NTD2955 application note NTD2955G 2955G DPAK equivalent ntd2955 NTD2955-001 ntd2955t4g 369D	PDF
nt2955g Abstract: NTP2955G nt 2955g 2955G STD2955T4G DPak Package size NTD2955 application note 369D-01 Contextual Info: NTD2955, NTD2955P, STD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power	Original	NTD2955, NTD2955P, STD2955 NTD2955/D nt2955g NTP2955G nt 2955g 2955G STD2955T4G DPak Package size NTD2955 application note 369D-01	PDF
nt2955g Abstract: nt 2955g Contextual Info: NTD2955, NTD2955P, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power	Original	NTD2955, NTD2955P, NVD2955 NTD2955/D nt2955g nt 2955g	PDF
nt2955g Abstract: nt 2955g 2955G ntd2955g NVD2955 NTP2955G NVD2955T4G NTD2955T Contextual Info: NTD2955, NTD2955P, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power	Original	NTD2955, NTD2955P, NVD2955 NTD2955/D nt2955g nt 2955g 2955G ntd2955g NTP2955G NVD2955T4G NTD2955T	PDF
Contextual Info: NTD2955, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power	Original	NTD2955, NVD2955 NTD2955/D	PDF