29APRI Search Results

TB400

Abstract: GR-1089-CORE TB0640M TB0720M TB0900M TB1100M TB1300M TB4000M
Contextual Info: LITE-ON SEMICONDUCTOR TB0640M thru TB4000M Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 360 Volts - 80 Amperes VDRM IPP FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 80A @10/1000us or 250A

Contextual Info: 29/04/11 RADIALL TECHNICAL DATA SHEET R 513 - - - - - - TTR NIIU UM MS Seerriieess RA AN NS SFFE ER RS SW WIITTC CH HE ES S : TTIITTA AN Issue : 29-April-2011 DPDT Coaxial Switches DC to 6 GHz, DC to 20 GHz, DC to 26.5 GHz, DC to 40 GHz Radiall’s TITANIUM switches are optimised to perform at a high level over an extended life span. With

Marking code CS

Abstract: MOSFET 2KV "MARKING CODE CS" n-channel mosfet transistor low power TLM621
Contextual Info: Central CTLDM7003-M621 SURFACE MOUNT TINY LEADLESS MODULETM ENHANCEMENT-MODE N-CHANNEL MOSFET TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM7003-M621 is a Silicon N-Channel Enhancement-mode MOSFET in a small, thermally efficient, TLMTM 2x1mm package.

pl 2303

Abstract: ST72344 ST72F344 LQFP32 LQFP44 LQFP48
Contextual Info: ST72344xx ST72345xx 8-bit MCU with up to 16 Kbytes Flash memory, 10-bit ADC, two 16-bit timers, two I2C, SPI, SCI Features • ■ ■ ■ ■ Memories – up to 16 Kbytes Program memory: single voltage extended Flash XFlash with readout and write protection, in-circuit and inapplication programming (ICP and IAP).

Contextual Info: PROCESS CPS150 Silicon Controlled Rectifier 25 Amp Sensitive Gate SCR Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 150 x 150 MILS Die Thickness 8.7 MILS Cathode Bonding Pad Area 117 x 84 MILS Gate Bonding Pad Area 24 x 24 MILS Top Side Metalization

Contextual Info: PROCESS CPD25 Fast Recovery Rectifier 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 88 x 88 MILS Die Thickness 11 MILS Anode Bonding Pad Area 69 x 69 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization

LCD 24 segments, 4 commons

Abstract: stm32l STM32l discovery STM32L-DISCOVERY STM32L152RBT6 STM32L15 ST-M32 IAR ewarm TRUESTUDIO STMicroelectronics date code DIP28
Contextual Info: STM32L-DISCOVERY STM32L ultralow power discovery board Data brief Features • STM32L152RBT6 microcontroller featuring 128 KB Flash, 16 KB RAM, 4 KB EEPROM, in an LQFP64 package ■ On-board ST-Link/V2 with selection mode switch to use the kit as a standalone

TB400

Abstract: TB4000H GR-1089-CORE TB0640H TB0720H TB0900H TB1100H TB1300H
Contextual Info: LITE-ON SEMICONDUCTOR TB0640H thru TB4000H Bi-Directional SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE - 58 to 360 Volts - 100 Amperes VDRM IPP FEATURES SMB Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 100A @ 10/1000us or 400 @

SOT-23 IP

Abstract: marking code P28 SOT 23 Programmable Unijunction Transistor CMPP6027 CMPP6027 CMPP6028 Programmable unijunction CMPP6028 unijunction
Contextual Info: Central CMPP6027 CMPP6028 SURFACE MOUNT PROGRAMMABLE UNIJUNCTION SILICON TRANSISTOR SOT-23 CASE TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPP6027, CMPP6028 types are Silicon Programmable Unijunction Transistors, manufactured in a surface mount SOT23 package, designed for adjustable programmable

Contextual Info: THIS DRAWI NG IS UNPUBLISHED. RE L EAS E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . ALL C O P Y R I G H T 20 20 LOC R 1G H T S R E S E RV E D. P .80 O o o O o o O o o o O O O O O O o O o o O o o ROW D o o O O O ROW C

Contextual Info: PROCESS CPS090 Silicon Controlled Rectifier 8 Amp Sensitive Gate SCR Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 90 x 90 MILS Die Thickness 8.7 MILS Cathode Bonding Pad Area 60 x 30 MILS Gate Bonding Pad Area 22 x 22 MILS Top Side Metalization

Contextual Info: PROCESS CPD07 General Purpose Rectifier 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 100 x 100 MILS Die Thickness 10.2 MILS Anode Bonding Pad Area 82 x 82 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization

Contextual Info: PROCESS TRIAC CPQ057 2 Amp, 600 Volt TRIAC Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 57 x 57 MILS Die Thickness 9.1 MILS MT1 Bonding Pad Area 29 x 17 MILS Gate Bonding Pad Area 8 x 8 MILS Top Side Metalization Al - 45,000Å Back Side Metalization

MBF310

Abstract: plasma tv technology ic fujitsu bubble memory diagram circuit usb mp3 player with radio fm lcd optical fingerprint sensor major project for electronics and communication e FR60Lite biosensor CMOS image sensor fingerprint circuit circuit diagram of queuing with LCD display
Contextual Info: F a l l 2 0 0 3 Fujitsufocus The News on the Latest Semiconductor Technologies and Products from Fujitsu Microelectronics America, Inc. The World’s First Single-chip 10Gbps Ethernet Switch The new 10Gbps Ethernet switch chip was developed for the optical network,

ST72F345

Abstract: 72f344 ST72F344 LQFP32 LQFP44 LQFP48 ST72340 ST72344 ST72345 st top marking lqfp48
Contextual Info: ST72340, ST72344, ST72345 8-BIT MCU WITH UP TO 16K FLASH MEMORY, 10-BIT ADC, TWO 16-BIT TIMERS, TWO I2C, SPI, SCI Memories – up to 16 Kbytes Program memory: Single voltage extended Flash XFlash with read-out and write protection, In-Circuit and In-Application Programming (ICP and IAP). 10K write/

CQ220-12B

Contextual Info: PROCESS Triac CPQ130 12 Amp, 600 Volt Triac Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 130 x 130 MILS Die Thickness 8.6 MILS ± 0.6 MILS MT1 Bonding Pad Area 99 x 49 MILS Gate Bonding Pad Area 34 x 34 MILS Top Side Metalization Al - 45,000Å

Contextual Info: PROCESS CPS165 Silicon Controlled Rectifier 35 Amp Sensitive Gate SCR Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 165 x 165 MILS Die Thickness 8.7 MILS Cathode Bonding Pad Area 131 x 91 MILS Gate Bonding Pad Area 31 x 31 MILS Top Side Metalization

Contextual Info: PROCESS CPS130 Silicon Controlled Rectifier 16 Amp Sensitive Gate SCR Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 130 x 130 MILS Die Thickness 8.7 MILS Cathode Bonding Pad Area 99 x 49 MILS Gate Bonding Pad Area 42 x 42 MILS Top Side Metalization

triac 4 amp 600 volt

Contextual Info: PROCESS Triac CPQ110 8 Amp, 600 Volt Triac Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 110 x 110 MILS Die Thickness 8.6 MILS ± 0.6 MILS MT1 Bonding Pad Area 80 x 35 MILS Gate Bonding Pad Area 37 x 37 MILS Top Side Metalization Al - 45,000Å

cbrhdsh1-40l

Abstract: 10A Schottky bridge
Contextual Info: CBRHDSH1-40L HIGH DENSITY 1.0 AMP DUAL IN LINE LOW VF SCHOTTKY BRIDGE RECTIFIER Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CBRHDSH1-40L is a full wave bridge rectifier mounted in a durable epoxy surface mount molded case, utilizing glass passivated

1N4157

Abstract: 1N4156 1N5179 CMXSTB200 CMXSTB300 CMXSTB400 marking D3 SOT26
Contextual Info: Central CMXSTB200 CMXSTB300 CMXSTB400 TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXSTB Series types are multi-chip silicon diodes mounted in a surface mount SOT-26 case and designed for applications requiring controlled forward voltage

Contextual Info: THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION ALL RIGHTS RESERVED. TE CONNECT 1V 1TY 20 REVISIONS LOC AA P LTR DESCRIPTION DATE ECO-10-026084 REV I SE D PER E C O - 1 1- 0 0 5140 ECO-11-019412 ECO-12-007527 D D E DWN APVD 20DEC2010 s o

pl001

Contextual Info: ST72344xx ST72345xx 8-bit MCU with up to 16 Kbytes Flash memory, 10-bit ADC, two 16-bit timers, two I2C, SPI, SCI Features • ■ ■ ■ ■ Memories – up to 16 Kbytes Program memory: single voltage extended Flash XFlash with readout and write protection, in-circuit and inapplication programming (ICP and IAP).

Contextual Info: STM32L-DISCOVERY 32L152CDISCOVERY Discovery kits for STM32L151/152 line Data brief • IDD current measurement • LCD – DIP28 package – 24 segments, 4 commons • Four LEDs: – LD1 red/green for USB communication – LD2 (red) for 3.3 V power on – Two user LEDs, LD3 (green) and LD4