Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMD£I Am29BL16xC 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only High Performance Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • Choice of three architectures ■ — Am 29BL160C: 4 w ords sequential with wrap around (linear 4), bottom boot
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Am29BL16xC
16-Bit)
29BL160C:
20-year
29BL161C:
29BL162C:
00000h-1
20000h-3FFFFh
40000h-5FFFFh
60000h-7FFFFh
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AM29BL161
Abstract: l162c
Text: ADVANCE INFORMATION AMD£I Am29BL16xC 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only High Performance Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • Choice of three architectures ■ — Am 29BL160C: 4 w ords sequential with wrap around (linear 4), bottom boot
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OCR Scan
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Am29BL16xC
29BL160C:
29BL161C:
29BL162C:
L161C
00000h-1
20000h-3FFFFh
40000h-5FFFFh
60000h-7FFFFh
80000h-9FFFFh
AM29BL161
l162c
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION AMDZ1 29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with w rap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 112 Kword, and seven 128 Kword sectors
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Am29BL162C
16-Bit)
29BL162C
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M29Fxxx
Abstract: No abstract text available
Text: P R E L IM IN A R Y A M D il 29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with w rap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee per sector
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Am29BL162C
16-Bit)
29BL162C
M29Fxxx
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AMDZ1 29BL162C 16 Megabit 1 M x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with w rap around (linear 32), bottom boot ■ Minimum 100,000 erase cycle guarantee per sector ■ One 8 Kword, two 4 Kword, one 112 Kword, and
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OCR Scan
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PDF
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Am29BL162C
16-Bit)
20-year
29BL162C
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