29DL40 Search Results

29DL400BT-70

Contextual Info: PRELIMINARY AMDil 29DL400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations ■ Sector protection — Host system can program or erase in one bank,

Contextual Info: AMDH 29DL400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations Sector protection — Host system can program or erase in one bank, then immediately and simultaneously read from

Contextual Info: FLASH MEMORY 4M 512K x 8/256K x 16 BIT CMOS 29DL400TC -55/-70/-90/-12/MBM29 D L400BC-55/-70/-90/-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Simultaneous operations Read-while-Erase or Read-while-Program

Contextual Info: PRELIMINARY AMDZ1 29DL400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations ■ Sector protection — Host system can program or erase in one bank,

Contextual Info: PRELIMINARY A M D ii 29DL400B 4 Megabit 512 K X 8-Bit/256 K X 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Sim ultaneous Read/W rite operations ■ — Hardware method of locking a sector to prevent any program or erase operation within that

29DL400TC

Contextual Info: FLASH MEMORY 4M 512K x 8/256K x 16 BIT CMOS M B M 2 9 D L 4 0 0 T C -55-70-90-12/M B M 29 D L400B C-5 5 -70 -90-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Simultaneous operations Read-while-Erase or Read-while-Program

29LV160TE

Abstract: 29lv800ta Micron 512MB NOR FLASH 29F800TA 29F033C 29f400tc TSOP 48 Package 29f160te Micron 32MB NOR FLASH 29f002tc
Contextual Info: T H E Home Products P O S S I B I L I T I E S A R E I N F I N I T E Contacts Contents Introduction to Flash Memory MEMORY SOLUTIONS NOR-Flash MirrorFlashTM FCRAMTM – Fast Cycle Ram MCP – Multi-Chip Packages Packaging Technology NOR-FLASH, MIRRORFLASHTM,

Contextual Info: AMD£I 29DL400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations Sector protection — Host system can program or erase in one bank, then immediately and simultaneously read from

29DL400BT-80

Abstract: 29DL400BT-70
Contextual Info: AMDH 29DL400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations Sector protection — Host system can program or erase in one bank, then immediately and simultaneously read from

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20866-2E FLASH MEMORY 4 M 5 1 2 K X 8 /2 5 6 K x 1 6 B IT M BM 29D L400TC -55/-70/-90/-12/MB M29D L400 B C -5 5-70 -90 -1 2 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements

Contextual Info: FUJITSU SEMICONDUCTOR ì DATA SHEET ¡ DS05-20866-1E FLASH MEMORY 4M 512K X 8/256K x 16 BIT B lB M B M 2 9 D L 4 0 0 T C « «