29V32000 Search Results

511ML

Abstract: 243L3 tsop 338 IR
Contextual Info: FLASH M EM ORY KM 29V32000TS/RS 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 4 M +128K bit x 8bit - Data Register : (512 + 16)bit x 8bit • Automatic Program and Erase - Page Program : (512 + 1S)Byte

Contextual Info: 29V32000TS FLASH MEMORY Document Tills 4M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. Removed reverse type package.

KM29V32000TS

Contextual Info: 29V32000TS ELECTRONICS Fl as h 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization The 29V32000TS/RS is a 4M 4,194,304 x8 bit NAND Flash memory with a spare 128K(131,072)x8 bit. Its NAND cell provides the most cost-effective solution for the mass

Contextual Info: 29V32000T, 29V32000IT FLASH MEMORY Document Title 4M X 8 bit NAND Flash Memory Revision Historv Revision No. Historv Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. Removed reverse type package.

b8331

Contextual Info: 29V32000TS/RS FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - vo lt Supply The K M 29V 32000T S /R S is a 4 M 4,19 4 ,3 0 4 x8 bit N AND • Organization Flash m em ory w ith a spare 128K (131,072)x8 bit. Its NAND

EM 319

Abstract: em319 GD5434
Contextual Info: 29V32000T/R FLASH MEMORY 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply T he KM 29V 32000T /R is a 4 M 4 ,19 4 ,3 0 4 x8 b it N AND • O rganization Flash m e m ory w ith a sp are 1 2 8 K (1 3 1,0 72 )x8 bit. - M em ory Cell Array

Contextual Info: KM29N32000T, KM29N32000IT FLASH MEMORY Document Title 4M X 8 bit NAND Flash Memory Revision History Revision No. History Draft Date o.o Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. Removed reverse type package.

KM29N32000

Abstract: KM29V32000IT KM29V32000T scheme electronics
Contextual Info: 29V32000T, 29V32000IT FLASH MEMORY Document Title 4M X 8 bit NAND Flash Memory Revision History Revision No. H istory Draft Date o.o Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. Removed reverse type package.

29N32

Contextual Info: FLASH MEMORY KM29N32000T, KM29N32000IT Document Title 4M x 8 bit NAND Flash Memory Revision Historv Revision No. Historv Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. Removed reverse type package.

Contextual Info: FLASH MEMORY KM29W32000TS Document Title 4M x 8 Bit NAND Flash Memory Revision Historv Revision No. Historv Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th Final 1998 The attached datasheets are prepared and approved by SAMSUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right

Contextual Info: KM29W32000TS 4M X FLASH MEMORY 8 Bit NAND Flash Mem ory Revision No. H istory Draft Date Rem ark 0 .0 Initial issue. April 10th 1998 P relim in a ry 1.0 D a ta s h e e t, 1998 J u ly 14th 1998 Final T h e a tta c h e d d a ta s h e e ts a re p re p a re d an d a p p ro v e d by S A M S U N G E lectronics. S A M S U N G E lectronics C O ., L T D . re s e rv e th e right

Contextual Info: KM29 V32000T Flash ELECTRONICS 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x 8bit - Data Register : (512 + 16)bitx8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte

Contextual Info: FLASH MEMORY KM29N32000TS Document Title 4M x 8 Bit NAND Flash Memory Revision Historv Revision No. Historv Draft Date 0.0 Data Sheet, 1997 April 10th 1997 1.0 Data Sheet, 1998 1. Changed tBER S p a ra m e te r: 5ms Typ. —> 2ms(Typ.) 2. Removed reverse type package.

Contextual Info: KM29W32000T, KM29W32000IT FLASH MEMORY Document Title 4M X 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. April 10th 1998 Preliminary 1.0 Data Sheet, 1998 July 14th 1998 Final The attached datasheets are prepared and approved by SAMSUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right