2N123 Search Results

Contextual Info: 2N1232 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m

Contextual Info: 2N1234 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)110 V(BR)CBO (V)110 I(C) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m

2N123

Contextual Info: 2N123 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)125m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85þ I(CBO) Max. (A)2.0u @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain.30 h(FE) Max. Current gain.150

2N4355

Abstract: KT209 BCY29 2SA546 LOW-POWER SILICON PNP 2N1475 KT209M
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 5 10 15 20 25 30 35 40 45 50 2N1474 BCY11S 2N1232 2N927 BCZ12 2N2595 2N2S01 2S301 2N1474A ST8509 KT209L KT501L BC143 BC343 BC287 BCY29 BCY29 PN4354 2N4354 2N3072 2N3073 ESMS38 2SA546 2N4030 BFR80 SHA7538 2N1233

Contextual Info: 2N123A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A) Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC) I(CBO) Max. (A)6u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.30 h(FE) Max. Current gain.

Contextual Info: 2N1239 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A)150m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)12 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m

Contextual Info: 2N1233 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m

Contextual Info: 2N1232A Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)90 I(C) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)175 I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N1230 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m

Contextual Info: 2N1238 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)15 I(C) Max. (A) Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)12 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m

Contextual Info: 2N1234+JAN Transistors Si PNP Lo-Pwr BJT Military/High-RelY V BR CEO (V)110 V(BR)CBO (V)110 I(C) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m

Contextual Info: 2N1231 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)35 I(C) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2n1243

Abstract: 2N1242 PB6025A bsv82 HA7528 2SA13590 2SA1361 TO4 package 2SB9050 2n1239
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 20 Ic Max (A) V(BR)CEO (V) fT hFE Min Max (Hz) ICBO Max (A) tr Max (8) tf Max (8) Po Max (W) Toper Max (Oe) Package Style >= 50 A, (Cont'd) SDT3901 SDT3602 SDT3602 SDT3902 SDT3902 SDT3902 MJ14001 SDT3603

D634 transistor

Abstract: 2N907 PNP 2sa648 transistor STC5202 2SA614 2SA616 2SA653 2P424 SE9573 B0536
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

SFT307

Abstract: usaf516es047m 2N2626 2N2624 2N2625 usaf516es048m FZJ 101 SFT308 usaf517es060m 2G302
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

ST8034

Abstract: ST8033 SL3015 NS1000 n BC420 2CY38 usaf521es071 NS1001 QD400-78 NS1862
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

transistor t05

Abstract: N2907 N2907A 2N3040 t05 transistor 2N2927A 2N2280 2N3064 2N1921 2N3058
Contextual Info: DIODE TRANSISTOR CO INC AM de ! 5flMfl35g D O D O m O 1 | o/ DIODE TRANSISTOR CD.i \ C. (201) 688-0400 • Telex: 139-385 • Outside NY & NJ area call TO LL FR EE 800-526-4581 FAX No. 201-575-5883 SILICON NPN LOW POWER TRANSISTORS DEVICES PKG DEVICES 2N327A

uPD70F3548

Abstract: uPD70F3554 uPD70F3558 uPD70F3550 uPD70F4002 v850e2 Fx4 uPD70F3551 uPD70F35 uPD70f4010 V850E2 FK4
Contextual Info: User Manual 32 Preliminary Document V850E2/Fx4 32-bit Microcontroller V850E2/FG4 V850E2/FJ4 V850E2/FK4 V850E2/FL4 µPD70F3548 µPD70F3549 µPD70F3550 µPD70F3551 µPD70F3552 µPD70F3553 µPD70F3554 µPD70F3555 µPD70F3556 µPD70F3557 µPD70F3558 µPD70F3559

2N1384

Abstract: 2N993 2N1516 2N1151 2N1378 2N1034 2N1036 2N1150 2N1037 2N1046
Contextual Info: D Ì G I T R O N E L E C T R O N I C CO RP 3bE D WM T W Ë DGE -p.'J 7 2flMHt.07 O G O O O D B Page MQITKON ELECTRONIC” CORP 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax JDHN J. S C H W A R T Z ENGINEERING DIGITRON ELECTRONICS, CORP

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

2n2301

Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
Contextual Info: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74

SFT308

Abstract: 2N2627 2G302 2N2209 2SA372 2N2625 2G395 2SA204 SFT307 R107
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,