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    2N2817 Search Results

    2N2817 Datasheets (23)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2817 API Electronics Short form transistor data Short Form PDF
    2N2817 General Semiconductor Low Frequency Silicon Power NPN Transistor Scan PDF
    2N2817 General Semiconductor Low Frequency Silicon Power NPN Transistor Scan PDF
    2N2817 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2817 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N2817 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N2817 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2817 Unknown GE Transistor Specifications Scan PDF
    2N2817 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N2817 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N2817 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N2817 Unknown Vintage Transistor Datasheets Scan PDF
    2N2817 Pirgo Electronics Low Frequency Silicon Power Transistor Scan PDF
    2N2817 Pirgo Electronics Power Transistors in TO-63 Scan PDF
    2N2817 Semelab Bi-Polar Transistors (CECC and High Rel) & High Energy Scan PDF
    2N2817 SGS-Thomson Transistor Datasheet Scan PDF
    2N2817 Silicon Transistor JAN / Consumer / Military / Industrial / Automotive / Hi-Rel Scan PDF
    2N2817 Silicon Transistor Industrial Grade Power Transistors Scan PDF
    2N2817 Solid Power POWER TRANSISTORS - TO-63 Scan PDF
    2N2817 Solid Power Power Transistors in TO-63 Package Scan PDF

    2N2817 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    to63

    Abstract: No abstract text available
    Text: B440355 SPACE SPACE POWER POWER ELECTRONICS 89C OQ1I2 Hi-Re! PLANAR P O W E R - 2 0 AMP Wk fll ELECTRONICS »E|S4H03SS D00D11E • | ~ FOR Breakdown Voltages TYPE ' 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822 2N2823 2N2824 2N2825


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    PDF B440355 S4H03SS D00D11E 2N3265 2N3266 2N3597 2N3598 2N3599 2N3846 2N3847 to63

    to63

    Abstract: No abstract text available
    Text: B440355 SPACE SPACE POWER POWER ELECTRONICS 89C OQ1I2 Hi-Re! PLANAR P O W E R - 2 0 AMP Wk fll ELECTRONICS »E|S4H03SS D00D11E • | ~ FOR Breakdown Voltages TYPE ' 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822 2N2823 2N2824 2N2825


    Original
    PDF B440355 S4H03SS D00D11E SPHV405 SPHV406 SPHV407 SPHV408 SPHV409 SPHV420 SPHV421 to63

    BDW16

    Abstract: SM3159 2N2753 str16 SM317 2U75 2N1826 BUV41
    Text: POWER SILICON NPN Item Number Part Number I C -5 10 15 20 30 35 40 45 50 -60 70 75 - 80 140 140 150 150 150 150 150 150 150 150 ~~6~~~~ ~e.!naex ~g ~~g 20 20 20 20 20 20 20 20 150 150 160 160 160 160 160 160 20 30 ~g ~~g 20 20 20 20 20 20 20 20 160 160 160


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    PDF MJ15003 RCA8638C SML8753 SML8757 2N1825 2N2125 2N2741 2N2747 2N2753 2N2817 BDW16 SM3159 str16 SM317 2U75 2N1826 BUV41

    2N3017

    Abstract: No abstract text available
    Text: SILICON NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N2823 2N2824 2N2825 2N2858 2N2859 2N2877 2N2878 2N2879 2N2880 2N2881 2N2882 2N2892 2N2893 2N2911 2N2983 2N2984


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    PDF 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N3017

    2N5314

    Abstract: 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598
    Text: A P I EL ECT RONI CS 00^3592 A P I I NC 2b ELECTRONICS d F | d D 4 3 S cIS □□□Q E3S INC 26C & l~ °~ T :- '3 3 - 0 { 00235 COLLECTOR CURRENT = 20 AMPS NPN TYPES Device No 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N3599 2N3772 JAN


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    PDF 0CH3592 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N5314

    2N1936

    Abstract: 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598
    Text: A P I ELECTRONICS 00^3592 A P I I NC ' at ELECTRONICS dF § D D 4 3 S cIS INC 26C □□□05BS ñ l~ V ~ T '~ ‘3 3 - 0 i 00235 CO LLECTO R CURRENT = 20 AM PS NPN TY PES Device No 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N3599 2N3772


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    PDF DD43ScIS D-7I33LOI 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598

    2N2094

    Abstract: 2N2096 2N2916 2N2640 2N2021 2N2914 2N2604 2N2605 2N2639 2N2641
    Text: MfiE D • 0133107 DDG0434 E5b M S N LB se m e la b :SEMELAB LTD T M . V Q / BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N2604 2N2605 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821


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    PDF D0G0434 2N2604 60min 2N2605 150min 2N2639 65min 2N2640 2N2641 2N2094 2N2096 2N2916 2N2021 2N2914

    AP1152

    Abstract: 2N4211 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597
    Text: A P I ELECTRONICS 00^3592 A P I I NC ' at ELECTRONICS dF § D D 4 3 S cIS INC 26C □□□05BS ñ l~ V ~ T '~ ‘3 3 - 0 i 00235 CO LLECTO R CURRENT = 20 AM PS NPN TY PES Device No 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N3599 2N3772


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    PDF DD43ScIS D-7I33LOI 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 AP1152 2N4211

    Untitled

    Abstract: No abstract text available
    Text: se m e la b : MfiE D • 0133107 DDG0434 E5b M S N LB SEMELAB LTD TM.VQ/ BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N2604 2N2605 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822


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    PDF DDG0434 2N2604 2N2605 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2815

    2N2818

    Abstract: 2N2817 2N281 TWX910-950-1942
    Text: SÛUARE D CO/ GENERAL ^5 D • 3918590 GENERAL SEMI CONDUCTOR 0525500 95D T General 'm * Sem iconductor « Industries, Inc • 0 0 G 2 QT 7 - 3 S 2 ■ D 02097 - / S CR V^T 2N2817 2N2818 SQ U R R E TI COMPHWY NPN N P N S W IT C H IN G P O W E R T R A N S IS T O R S


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    PDF 00Q2CH7 2N2817 2N2818 2N2818 2N281? 10/JS TWX910-950-1942 2N281 TWX910-950-1942

    Untitled

    Abstract: No abstract text available
    Text: Reliability Polarity Option TVpe No. A1331A7 O Q O O O m 37E D SEMELAB LTD Package v CEO <C eont hF E @ v CE/fC »T Pd 2N2817 2N2818 2N2819 2N2820 2N2821 HI-REL HI-REL HI-REL HI-REL HI-REL NPN NPN NPN NPN NPN T063 T063 T063 T063 T063 150 200 80 100 150 20


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    PDF A1331A7 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822 2N2823 2N2824 2N2825

    2N2824

    Abstract: 2N2819 2N2771
    Text: electronics inc POWER TRANSISTORS TYPE NO. 2N2757 200 MAXIMUM RATINGS Ic B V cbo BVcto BVteo V A V V 50 50 15 30 Ic A Vce V Test Sat Voltages Conditions V be Ic le lEBO V ce A A ma V V 10 4 1.5 a> hFE MIN MAX 10 2.5 10 2 25 2 25 2N2758 200 100 100 15 30 10


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    PDF 2N2757 2N2758 2N2759 2N2760 2N2761 2N2763 2N2764 2N2765 2N2766 2N2769 2N2824 2N2819 2N2771

    2N2753

    Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
    Text: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068


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    PDF 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N2753 S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110

    2N1016

    Abstract: 2N1015C STA3265 2N2229 2N1015 2N1015A 2N1015B 2N1015D 2N1015E STA9760
    Text: Silicon power transistors NPN TO-61 isolated collector (contad) lc | M A X ) Il FE IC/VCE VcEO(SUS| (Min-Max Tvp e# (Volts) @ A/V) STA9760 10-200 10/4 225 STA9761 300 10-200@ 8/4 10-200@5/4 STA 9762 350 VCE|S*T| @ Ic/Ib (V <a A/A) 2@ 10/1 2 @ 8 /.8


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    PDF STA9760 STAB760 STA9761 STA3265 STA3285 STA3266 STA8860 2N1016 2N1015C 2N2229 2N1015 2N1015A 2N1015B 2N1015D 2N1015E

    2N2772

    Abstract: 2n2770
    Text: POWER TRANSISTORS Sat Voltages PT TYPE NO. @ 25°C Watts h FE M A X I M U M R A T IN C S Ic B V c b c BV ceq B V e b o V V V A i> M IN M AX Ic A Test Conditions Vet V be Ic Ib lEBO V V V A A ma r VCE 2N2757 200 50 50 15 30 10 10 4 1.5 2.5 10 2 25 2N2758 200


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    PDF 2N2757 2N2758 2N2759 2N2760 2N2761 2N2763 2N2764 2N2765 2N2766 2N2769 2N2772 2n2770

    1n52408

    Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
    Text: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which


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    PDF 301PT1115 302PT1115 303PT1115 311PT1110 312PTI110 319PTI110 327PTI110 351PT1115 353PT1115 1n52408 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    PDF

    GSTR120

    Abstract: SR10030
    Text: Ic = 15 AMPS DATA DEVICE b v ceo hFE@ Min. le ^CE VOLTS P D@ 100°C WATTS AMPS VOLTS VOLTS AMPS IcBO @ v CB SHEET PG. NO. TYPE PACKAGE VOLTS BVcbo VOLTS GSDR10020 GSDR10025 GSTR12030 GSTR12035 GSTR12040 TO-3 TO-3 TO-3 TO-3 TO-3 200 250 300 350 400 250 300


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    PDF GSDR10020 GSDR10025 GSTR12030 GSTR12035 GSTR12040 2N6341 GSTR120 SR10030

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2N2818

    Abstract: 2N2757 2N2758 2N2759 2N2760 2N2761 2N2763 2N2764 2N2765 2N2766
    Text: POWER TRANSISTORS TYPE NO. PT @ 25°C Watts MAXIMUM RATINGS B V c bo B V ceo B V ebo Ic V A V V Sat Voltages 3> hFE MIN MAX Test Conditions Ic A V ce VCE V be Ic Ib lEBO V V V A A ma 2N2757 200 50 50 15 30 10 10 4 1.5 2.5 10 2 25 2N2758 200 100 100 15 30 10


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    PDF 2N2757 2N2758 2N2759 2N2760 2N2761 2N2763 2N2764 2N2765 2N2766 2N2769 2N2818

    NPN 200 VOLTS 20 Amps POWER TRANSISTOR

    Abstract: 2N3021 2n3223 2N3589 NPN 20 Amps POWER TRANSISTOR to63 MT27 NPN 90 Amps POWER TRANSISTOR to63 2N3025 2NXXXX TO63 package
    Text: r ^ 3 *t3 SILICON TRANSISTOR C O R P _ 8 8 0 0 0 7 9 2 DE lflES40ea O O O O T T S b flfl NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type Polarity lcMax Amps VCECKSUS) Volts Package Type Polarity . ^ 33^77 lc Max Amps VCEO(SUS)


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    PDF flES40ea rr33T77 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 NPN 200 VOLTS 20 Amps POWER TRANSISTOR 2N3021 2n3223 2N3589 NPN 20 Amps POWER TRANSISTOR to63 MT27 NPN 90 Amps POWER TRANSISTOR to63 2N3025 2NXXXX TO63 package

    Untitled

    Abstract: No abstract text available
    Text: May 1998 SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No Description 2N2222ADCSM CECC Dual device in CSM 2N2222AQF Quad Ceramic Flat Pack 2N2222CSM Ceramic Surface Mount 2N2222CSM CECC Ceramic Surface Mount 2N2222DCSM Dual device in CSM 2N2222DCSM CECC Dual device in CSM


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    PDF 2N2222ADCSM 2N2222AQF 2N2222CSM 2N2222DCSM 2N2223 2N2223A 2N2223L 2N2236

    2N2757

    Abstract: 2N2758 2N2759 2N2760 2N2761 2N2763 2N2764 2N2765 2N2766 2N2769
    Text: POWER TRANSISTORS TYPE NO. TO-63 MIN MAX le A V ce VCE V be V V V Test Conditions le Ib lEBO A A ma 200 50 50 15 30 10 10 4 1.5 2.5 10 2 25 2N2758 200 100 100 15 30 10 10 4 1.5 2.5 10 2 25 2N2759 200 150 150 15 30 10 10 4 1.5 2.5 10 2 25 2N2760 200 200 200


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    PDF 2N2757 2N2758 2N2759 2N2760 2N2761 2N2763 2N2764 2N2765 2N2766 2N2769