2N3499 Search Results

2N3499L

Abstract: 2N3499LJ 2N3499LJV 2N3499LJX
Contextual Info: 2N3499L Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3499LJ • JANTX level (2N3499LJX)

Contextual Info: ¿888888888 |pM iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr o% #f 1 I Ic ^88888 l D a ta S h e e t No. 2 N 3 4 9 9 $ id L S E M IC O N D U C T O R S G eneric Part Num ber: 2N3499 Type 2N3499 G eom etry 5620 P olarity NPN Q ual Level: JAN - JA N TXV

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR RF TRANSISTORS 2N3498, 2N3499, 2N3500, 2N3501 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL TEST CONDITION

Contextual Info: 2N3499 Chip Type 2C3501 Geometry 5620 Polarity NPN 9.67 Transistor. 1 of 1 Home Part Number: 2N3499 Online Store 2N3499 Diodes C hip Ty pe 2 C 3 5 0 1 G eo m et ry 5 6 2 0 Po larit y NPN Transistors

Contextual Info: 2N3499 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300

Contextual Info: 2N3499L+JANTX Transistors Si NPN Power HF BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.100

Contextual Info: 2N3499+JANS Transistors Si NPN Power HF BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100

Contextual Info: 2N3499L+JANS Transistors Si NPN Power HF BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.100

Contextual Info: 2N3499 Silicon NPN Transistor D a ta S h e e t Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3499J • JANTX level (2N3499JX)

Contextual Info: ¿888888888 p |M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. ><>niftBHhr D a ta S h e e t No. 2 N 3 4 9 9 L m 1 1 I Ic ^88888o% #f 1 l $ id L SEMICONDUCTORS Type 2N3499L G eneric Part Num ber: 2N3499 G eom etry 5620 P olarity NPN Q ual Level: JAN - JA N TXV

2N2201

Abstract: 2k4037 2N3637 semicoa npn general purpose medium speed 2N4358 2N2008 2N3114 2N3498 2N3499 2N3500
Contextual Info: 8134693 SEMICQA NPN GENERAL PURPOSE MEDIUM SPEED AMPLIFIERS Cont’d Type NPN 2N3498 2N3499 2N2201 2N2008 2N3923 2N3712 2N3114 2K4925 2N3500 2K3501 2N4926 2N2726 2N2727 40412 2N4927 2N3440 2N5279 2N3439 2N5092 Electrical Characteristics @ 25°C Maximum Ratings

2N3499

Abstract: 2N3499L
Contextual Info: Data Sheet No. 2N3499L Generic Part Number: 2N3499 Type 2N3499L Geometry 5620 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/366 Features: • General-purpose silicon transistor for switching and amplifier applications. • Housed in TO-5 case. •

2N3499

Abstract: 2N3499J 2N3499JV 2N3499JX
Contextual Info: 2N3499 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3499J • JANTX level (2N3499JX)

2N3501 MOTOROLA

Abstract: 2N3499 n-3500
Contextual Info: MOTOROLA SC XSTPS/R F hflE D • b3t.72SH GGTÌ442 SÔ7 ■ MOTb 2N3499 thru 2N3501* M A X I M U M R A T IN G S 2N3499 2N3500 2N3501 U n it Sym bol C o llector-E m itter V oltag e V CEO 100 150 V dc C o llector-B ase V oltage VCBO 100 150 V dc E m itter-Base V olta g e

Contextual Info: 2N3499+JAN Transistors Si NPN Power HF BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100

Contextual Info: 2N3499+JANTXV Transistors Si NPN Power HF BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100

2N3498

Abstract: 2N3499 2N3500 2N3501
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR RF TRANSISTORS 2N3498, 2N3499, 2N3500, 2N3501 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL TEST CONDITION

JANTX2N5109

Abstract: JANTX2N3735 23219 2n2107 jantx2n3866
Contextual Info: Microsemi NPN Transistors Part Number 2N5109 JAN2N5109 JANTX2N5109 JANTXV2N5109 2N3866A JAN2N3866A JANTX2N3866A JANTXV2N3866A 2N2106 2N2107 2N2108 2N3498 2N3499 JAN2N3498 2N3499 JANTX2N3498 2N3499 JANTXV2N3498 2N3499 2N2726 2N2727 2N4000 2N4001

Contextual Info: m 2N3499 \ \ SILICON NPN TRANSISTOR DESCRIPTION: The 2N3499 is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATINGS lc 300 mA V ce 100 V P diss 5.0 W @ Tc = 25 °C Tj -65 °C to +200 °C T stg -65 °C to +200 °C 0JC 35 °C/W

Contextual Info: 2N3499L Silicon NPN Transistor D a ta S h e e t Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3499LJ • JANTX level (2N3499LJX)

2N3499

Abstract: 2N3499J 2N3499JV 2N3499JX
Contextual Info: 2N3499 Silicon NPN Transistor D a ta S h e e t Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3499J • JANTX level (2N3499JX)

2N3501 MOTOROLA

Abstract: N3499 2n3501
Contextual Info: 2N3499 thru 2N3501* M AXIMUM RATINGS 2N3499 2N3500 2N3501 U n it Symbol C o lle ctor-E m itter Voltage v CEO 100 150 Vdc Collector-Base Voltage VCBO 100 Em itter-Base Voltage v EBO Rating 150 Vdc 6.0 Vdc C o lle ctor C urrent — C ontinuous <C Total Device D issipation a, T ^ = 25aC

2N3499

Abstract: 2N3498 2n3500
Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3498 2N3499 2N3500 2N3501 C8YSTALONCS 2B05 Veterans Highway Suite 14 NPN Silicon Small-Signal Transistors Ronkontoma, N.Y. 11776 . d e sig n e d fo r g e n e ra l-p u rp o se sw itc h in g and a m p lifie r a p p lica tio n s in h ig h -vo lta g e

2N3500

Abstract: 2N3499 2N3501 2N3498
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR RF TRANSISTORS 2N3498, 2N3499, 2N3500, 2N3501 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL TEST CONDITION